Yayınlar & Eserler

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method

ŞAFAK ASAR Y., Feizollahi Vahid A., Basman N., ÇETİNKAYA H. G., ALTINDAL Ş.
Applied Physics A: Materials Science and Processing , cilt.129, sa.5, 2023 (SCI-Expanded) identifier identifier

The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures

Feizollahi Vahid A., Alptekin S., Basman N., ULUSOY M., ŞAFAK ASAR Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics , cilt.34, sa.13, 2023 (SCI-Expanded) identifier identifier

Investigation of dielectric relaxation and ac conductivity in Au/(carbon nanosheet-PVP composite)/n-Si capacitors using impedance measurements

ŞAFAK ASAR Y., SEVGİLİ Ö., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics , cilt.34, sa.10, 2023 (SCI-Expanded) identifier identifier

On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)

ÇETİNKAYA H. G., Feizollahi Vahid A., Basman N., Demirezen S., ŞAFAK ASAR Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics , cilt.34, sa.9, 2023 (SCI-Expanded) identifier identifier

Influence of graphene doping rate in PVA organic thin film on the performance of Al/p-Si structure

Yeriskin S., ŞAFAK ASAR Y.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.18, ss.22860-22867, 2021 (SCI-Expanded) identifier identifier

Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

ŞAFAK ASAR Y., ASAR T., ALTINDAL Ş., ÖZÇELİK S.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.628, ss.442-449, 2015 (SCI-Expanded) identifier identifier

Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures

ŞAFAK ASAR Y., ASAR T., ALTINDAL Ş., ÖZÇELİK S.
PHILOSOPHICAL MAGAZINE , cilt.95, sa.26, ss.2885-2898, 2015 (SCI-Expanded) identifier identifier

On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity in Al/SiO2/p-Si (MOS) Capacitors

Kaya A., ALTINDAL Ş., ŞAFAK ASAR Y., Sonmez Z.
CHINESE PHYSICS LETTERS , cilt.30, sa.1, 2013 (SCI-Expanded) identifier identifier

Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 angstrom SiO2 interfacial layer using admittance spectroscopy method

Altindal S., Asar Y., Kaya A., Sonmez Z.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.14, ss.998-1004, 2012 (SCI-Expanded) identifier

Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics

VURAL Ö., ŞAFAK ASAR Y., Turut A., ALTINDAL Ş.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.513, ss.107-111, 2012 (SCI-Expanded) identifier identifier

On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode

ŞAFAK ASAR Y., SOYLU M., YAKUPHANOĞLU F., ALTINDAL Ş.
JOURNAL OF APPLIED PHYSICS , cilt.111, sa.3, 2012 (SCI-Expanded) identifier identifier

Effects of illumination on I-V, C-V and G/w-V characteristics of Au/n-CdTe Schottky barrier diodes

Kanbur H., Altindal Ş., Mammadov T., Safak Y.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.13, ss.713-718, 2011 (SCI-Expanded) identifier identifier

Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes

Arslan E., Butun S., ŞAFAK ASAR Y., Cakmak H., Yu H., ÖZBAY E.
MICROELECTRONICS RELIABILITY , cilt.51, sa.3, ss.576-580, 2011 (SCI-Expanded) Creative Commons License identifier identifier

Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

Arslan E., Butun S., ŞAFAK ASAR Y., Uslu H., Tascioglu I., ALTINDAL Ş., et al.
MICROELECTRONICS RELIABILITY , cilt.51, sa.2, ss.370-375, 2011 (SCI-Expanded) Creative Commons License identifier identifier

Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis

Arslan E., Butun S., ŞAFAK ASAR Y., ÖZBAY E.
JOURNAL OF ELECTRONIC MATERIALS , cilt.39, sa.12, ss.2681-2686, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan E., ŞAFAK ASAR Y., Tascioglu I., Uslu H., ÖZBAY E.
MICROELECTRONIC ENGINEERING , cilt.87, sa.10, ss.1997-2001, 2010 (SCI-Expanded) Creative Commons License identifier identifier

The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AlN/GaN heterostructures

ALTINDAL Ş., ŞAFAK ASAR Y., Tascioglu I., ÖZBAY E.
SURFACE AND INTERFACE ANALYSIS , cilt.42, ss.803-806, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures

Tascioglu I., Uslu H., Safak Y., Ozbay E.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.6, ss.859-862, 2010 (SCI-Expanded) identifier identifier

Temperature-dependent profile of the surface states and series resistance in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Tascioglu I., AYDEMİR U., Safak Y., Ozbay E.
SURFACE AND INTERFACE ANALYSIS , cilt.42, ss.812-815, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

Vural O., Safak Y., Altindal Ş., Turut A.
CURRENT APPLIED PHYSICS , cilt.10, sa.3, ss.761-765, 2010 (SCI-Expanded) identifier identifier

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan E., ŞAFAK ASAR Y., ALTINDAL Ş., Kelekci O., ÖZBAY E.
JOURNAL OF NON-CRYSTALLINE SOLIDS , cilt.356, ss.1006-1011, 2010 (SCI-Expanded) Creative Commons License identifier identifier

The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature

Uslu H., Safak Y., Tascioglu I., Altindal Ş.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.12, sa.2, ss.262-266, 2010 (SCI-Expanded) identifier identifier

Diğer Dergilerde Yayınlanan Makaleler

Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi

Altındal Yerişkin S., ŞAFAK ASAR Y.
Gazi Üniversitesi Fen Fakültesi Dergisi , 2020 (Hakemli Dergi)

On the temperature dependent reverse current conduction mechanisms in (AuZn)/TiO2/p-GaAs MIS structures

ŞAFAK ASAR Y.
Journal of Materials and Electronic Devices4(2020) 14-20 , 2020 (Hakemli Dergi)

A comparative of energy density distribution of surface states profiles with 50 and 826 Å insulator layer in Al SiO2 p Si

ALTINDAL Ş., KAYA A., SÖNMEZ Z., ŞAFAK ASAR Y.
Azerbaijan Journal of Physics, Fizika, (ISSN 1028-8546) , cilt.16, sa.2, ss.356-358, 2010 (Hakemli Dergi)

Effect of gamma ray 60Co irradiation on the C V and G w caharacteristics of Au n CdTe Schottky barrier sidodes SBDs

ŞAFAK ASAR Y., KANBUR ÇAVUŞ H., USLU H., MAMMADOV T.
Azerbaijan Journal of Physics, Fizika, (ISSN 1028-8546) , cilt.16, sa.2, ss.364-366, 2010 (Hakemli Dergi)

Frequency Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures

AYDEMİR U., ŞAFAK ASAR Y., ALTINDAL Ş., AGASİYEV A. A.
Journal of Optoelectronics and Advanced Materials - Symposia , cilt.1, sa.3, ss.258-261, 2009 (Hakemli Dergi)

Temperature Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures

ŞAFAK ASAR Y., AYDEMİR U., ALTINDAL Ş., MAMMADOV T. S., TATAROĞLU A.
Journal of Optoelectronics and Advanced Materials - Symposia , cilt.1, sa.3, ss.266-269, 2009 (Hakemli Dergi)

On the Frequency and Voltage Dependent Interface States and Series Resistance in Au SrTiO3 n Si Structures

AYDEMİR U., ŞAFAK ASAR Y., MAMMADOV T. S., ALTINDAL Ş.
Balkan Physics Letters , cilt.15, sa.1, ss.151050, 2009 (Hakemli Dergi)

The Barrier Height Distribution in Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures

ŞAFAK ASAR Y., AYDEMİR U., ALTINDAL Ş., MAMMADOV T.
Balkan Physics Letters , cilt.15, sa.1, ss.151056, 2009 (Hakemli Dergi)

Frequency and Temperature Dependent Interface States and Series Resistance of Au CdTe Schottky Diodes

MAMMADOV T. S., KANBUR ÇAVUŞ H., ŞAFAK ASAR Y., ALTINDAL Ş., ACAR S., AKHMEDZADE N. D.
Azerbaijan Journal of Physics, Fizika , cilt.13, sa.4, ss.219-223, 2007 (Hakemli Dergi)

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Polimer ara yüzeyli yapılar ve aygıt özelliklerininbelirlenmesi

ŞAFAK ASAR Y.
25. Yoğun Madde Fiziği ankara Toplantısı YMF25, Türkiye, 20 Aralık 2019

A compare study on the electrical characteristics of Al/p-Si (MS) and Al/TiO2/p-Si (MIS) structures both in dark and under illumination

Zerdali B., ŞAFAK ASAR Y., ORAK İ.
5th Internatıonal conference on materials science and advanced-nanotechnologies for next generation (MSNG2018), 4 - 06 Ekim 2018

On the anomalous peak in the capacitance-voltage characteristics of Au/TiO2/n-Si (MIS) structures at the depletion and accumulation region

ŞAFAK ASAR Y., Erkul Y. A., Zerdali B., ORAK İ.
5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 Ekim 2018

The Investigation of Photoconducting Properties of Au TiO2 n Si MIS Type Photodiode by Using Current Voltage Characteristics at Room Temperature

ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016

The Investigation of Photocapacitor Properties of Au TiO2 n Si MIS Type Photodiode by Using Impedance Measurements at Room Temperature

ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016

The investigation of photocapacitor properties of Au TiO2 n Si MIS type photodiode bu using impedance measurements at room temperature

ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016

The investigation of photoconducting properties of Au TiO2 n Si MIS type photodiode by using curent voltage characteristics at room temperature

ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016

ALD Tekniği ile oluşturulan Au/TiO2/n-Si diyotların elektriksel ve foto-iletim özelliklerinin oda sıcaklığında incelenmesi

ŞAFAK ASAR Y., ALTINDAL Ş.
21. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 25 Aralık 2015

AuZn TiO2 p GaAs 110 Schottky Bariyer Diyotlarda Dielektrik ve Empedans Spektroskopisi

ŞAFAK ASAR Y., ASAR T., ÖZÇELİK S., ALTINDAL Ş.
20. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 26 Aralık 2014, ss.79

Au/TiO2/n-Si Diyotlarda aydınlatma şiddetinin doğru ve ters beslem C-V ve G/-V karakteristikler üzerine etkisinin incelenmesi

ALTINDAL Ş., ŞAFAK ASAR Y., ORAK İ.
21. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 25 Aralık 2015

The energy density distribution of interface states in AuZn TiO2 p GaAs 110 MIS schottky barrier diodes using admittance spectroscopy

ŞAFAK ASAR Y., ALTINDAL Ş.
Türk Fizik Derneği 31. Uluslararası Fizik Kogresi, 21 - 24 Temmuz 2014

The frequency dependence properties of tan M and M in the wide frequency range in AuZn TiO2 p GaAs 110 schottky barrier diodes

ŞAFAK ASAR Y., ALTINDAL Ş.
Türk Fizik Derneği 31. Uluslararası Fizik Kongresi, 21 - 24 Temmuz 2014

The evaluation of Surface States Barrier Height and Series Resistance in Au CdTe Schottky Barrier Diodes SBDs at Moderate Temperatures

ŞAFAK ASAR Y., ALTINDAL Ş., MEMMEDLİ T., KANBUR ÇAVUŞ H.
Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, 6 - 09 Eylül 2011

On the Energy Density Distribution Profile of surface States in Al pentacene p GaSa Heterojuction Diodes

ŞAFAK ASAR Y., YAKUPHANOĞLU F., ALTINDAL Ş.
Mini-Workshop on Surface Science for Inauguration of the Turskish Surface Science Society, Türkiye, 23 Mayıs 2011

The determination of frequency and applied bias voltage of electrical and dielectric properties of Al SiO2 p Si MOS structures

ALTINDAL Ş., ŞAFAK ASAR Y., SÖNMEZ Z., KAYA A.
Türk Fizik Derneği 27. Uluslararası Fizik Kongresi, 14 - 17 Eylül 2010

The determination of energy density distribution profile of interface states in Al SiO2 p Si MOS structures

ŞAFAK ASAR Y., ALTINDAL Ş., Sönmez Z., KAYA A.
Türk Fizik Derneği 27. Uluslararası Fizik Kongresi, 14 - 17 Eylül 2010

Au SrTiO3 n Si Yapısındaki Derin Seviyelerin Tavlamaya Bağlı DLTS Metodu ile Karakterizasyonu

AYDEMİR U., TAŞÇIOĞLU İ., ASAR T., ŞAFAK Y., ALTINDAL Ş., MAMMADOV T. S., et al.
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Kasım 2009, ss.92

Temperature dependent profile of the surface states and series resistance in Ni Au AlGaN AlN GaN heterostructures

TAŞÇIOĞLU İ., Aydemir U., ŞAFAK ASAR Y., ÖZBAY E.
13th European Conference on Applications of Surface and Interface Analysis, 18 - 23 Ekim 2009

The profile of frequency and bias voltage dependent series resistance and the interface states in Ni Au AlGaN AlN GaN heterostructures

ŞAFAK ASAR Y., ÖZÇELİK S., USLU H., ÖZBAY E.
13th European Conference on Applications of Surface and Interface Analysis, Türkiye, 18 - 23 Ekim 2009

The effect of insulator layer thickness on the main electrical parameters in Ni Au AlxGa1 xN AlN GaN heterostructures

ALTINDAL Ş., ŞAFAK ASAR Y., TAŞÇIOĞLU İ., ÖZBAY E.
13th European Conference on Applications of Surface and Interface Analysis, 18 - 23 Ekim 2009

Deep level transient spectroscopy of Au SrTiO3 n Si structures

AYDEMİR U., ŞAFAK ASAR Y., ALTINDAL Ş.
Türk Fizik Derneği 26. Uluslar arası Fizik Kongresi, 24-27 Eylül 2009, 24 - 27 Eylül 2009

Frequency Dependent Electrical Characteristics of Ni Au AlGaN AlN GaN Heterostructures

TAŞÇIOĞLU İ., USLU H., ŞAFAK ASAR Y., TATAROĞLU A., ÖZBAY E.
7th BPU General Conference, Alexandroupolis, Greece, 9-13 Sept 2009., Yunanistan, 9 - 13 Eylül 2009

The effects of frequency and illumination intensity on the main electrical characteristics of Al TiW Pd2Si n Si structures at room temperature

USLU H., ŞAFAK ASAR Y., TAŞÇIOĞLU İ., AFANDİYEVA İ. M.
7th BPU General Conference, Alexandroupolis, Greece, 9-13 Sept 2009., Yunanistan, 9 - 13 Eylül 2009

Ni Au AlGaN AlN GaN Çoklu Yapıların Ara Yüzey Durum Yoğunluğu Profili

ŞAFAK ASAR Y., USLU H., TAŞÇIOĞLU İ., ÖZBAY E.
Metal, Yarıiletken ve Oksit Materyallerin Üretiminde Kullanılan Sistemler ve Analiz Teknikleri Kongresi, Türkiye, 15 - 16 Haziran 2009

Püskürtme Metodu ile Hazırlanmış Metal Ferroelektrik Yarıiletken Yapılarda Seri Direnç Etkisinin Sıcaklığa Bağlı İncelenmesi

Aydemir U., USLU H., TAŞÇIOĞLU İ., ŞAFAK ASAR Y.
Metal, Yarıiletken ve Oksit Materyallerin Üretiminde Kullanılan Sistemler ve Analiz Teknikleri Kongresi, Türkiye, 15 - 16 Haziran 2009

Metrikler

Yayın

58

Atıf (WoS)

589

H-İndeks (WoS)

14

Atıf (Scopus)

470

H-İndeks (Scopus)

13

Atıf (Scholar)

399

H-İndeks (Scholar)

8

Proje

5

Tez Danışmanlığı

1

Açık Erişim

8
BM Sürdürülebilir Kalkınma Amaçları