Published journal articles indexed by SCI, SSCI, and AHCI
Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.28, no.5, pp.3987-3996, 2017 (SCI-Expanded)


Far-infrared and Raman analysis of phonons and phonon interface modes in GaN epilayers on GaAs and GaP substrates
Physical Review B - Condensed Matter and Materials Physics, vol.57, no.8, pp.4656-4663, 1998 (SCI-Expanded)

Refereed Congress / Symposium Publications in Proceedings
Electrical characteristics of Au/n-Si structure with perylene interfacial layer at room temperature
5th International Conference on Materials Science and Nanotechnology for Next Generation, 4 - 06 June 2018
The effect of illumination on the electrical characterization of Al/HfO2/p-Si MOS device
5th International Conference on Materials Science and Nanotechnology for Next Generation, 4 - 06 October 2018
Capacitance-voltage and Conductance-voltageCharacteristics of Au/C20H12/n-Si Structure at high temperatures
2nd International Conference on Innovations in Natural Science and Engineering, Kye, Ukraine, 7 - 10 September 2018
Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel,
2nd International Conference on Innovations in NaturalScience and Engineering, KYİV, Ukraine, 7 - 10 September 2018
Capacitance - voltage and Conductance - voltage Characteristics of Au/ C20H12/n-Si Structure at high temperatures
2nd International Conference on Innovations in Natural Science and Engineering, 7 - 09 September 2018
Al/P3HT/p-Si (MPS) Schottky Diyotlarının Oda Sıcaklığında Akım-Gerilim Karakteristiklerinin I-V, Norde ve Cheung Metodu Kullanılarak İncelenmesi
23. Yoğun Madde Fiziği – Ankara Toplantısı, Ankara, Turkey, 22 December 2017
On the profıle of temperature dependent main electrical parameters inAl/P3HT/p-Si (MPS) structures at low temperatures
InternationalCongress on Semiconductor Materials and Devices (ICSMD-2017), Konya, Turkey, 17 - 19 August 2017
THE INVESTIGATION OF FREQUENCY AND VOLTAGE DEPENDENCE ON ELECTRIC CHARACTERISTICS OF Al/P3HT/ P-Si (MPS) STRUCTURES
INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIAL AND DEVICES, 17 - 19 August 2017
Surface behaviour of plasma etched photodetector in a planar gas discharge image converter, Malmö, Sweden
7th International Conference on Nanometer-Scale Science and Technology, (ECOSS-21), 14 - 16 June 2002