Prof. Dr. MEHMET MAHİR BÜLBÜL

Yayın Ağı

Makaleler 28

1. Hybrid Organic-Inorganic ZnO/PCBM Electron Transport Layer with Organic Lead Halide Perovskite Solar Cell Materials CH3 NH3 PbIX2, X is Cl or I

Alaiawi A. A. L., BÜLBÜL M. M., Jafar A. M.

International Journal of Nanoscience , cilt.23, sa.3, 2024 (ESCI)

2. Preparation of Ag@SiO2 core–shell nanoparticles for plasmonic dye-sensitized solar cell application using laser ablation in liquid technique

Mohammed M. A., Salman O. N., BÜLBÜL M. M.

Optical and Quantum Electronics , cilt.56, sa.1, 2024 (SCI-Expanded)

3. Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range

Bengi S., Yükseltürk E., BÜLBÜL M. M.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.3, 2023 (SCI-Expanded)

4. Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

Moraki K., Bengi S., Zeyrek S., Bulbul M. M., Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.28, sa.5, ss.3987-3996, 2017 (SCI-Expanded)

5. Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes

Bengi S., BÜLBÜL M. M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.16, ss.451-456, 2014 (SCI-Expanded)

6. Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures

Bengi S., Bulbul M. M.

CURRENT APPLIED PHYSICS , cilt.13, sa.8, ss.1819-1825, 2013 (SCI-Expanded)

7. The effect of series resistance and interface states on the frequency dependent C-V and G/w-V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes

Zeyrek S., Acaroglu E., Altindal Ş., Birdogan S., Bulbul M. M.

CURRENT APPLIED PHYSICS , cilt.13, sa.7, ss.1225-1230, 2013 (SCI-Expanded)

8. The C-V and G/omega-V Electrical Characteristics of Co-60 gamma-Ray Irradiated Al/Si3N4/p-Si (MIS) Structures

Zeyrek S., Turan A., Bulbul M. M.

CHINESE PHYSICS LETTERS , cilt.30, sa.7, 2013 (SCI-Expanded)

9. Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier

Afandiyeva I. M., Bulbul M. M., Altindal Ş., Bengi S.

MICROELECTRONIC ENGINEERING , cilt.93, ss.50-55, 2012 (SCI-Expanded)

10. The density of interface states and their relaxation times in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

Bulbul M. M., Altindal Ş., Parlakturk F., TATAROĞLU A.

SURFACE AND INTERFACE ANALYSIS , cilt.43, sa.13, ss.1561-1565, 2011 (SCI-Expanded)

11. Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes

Bulbul M. M., Bengi S., Dokme İ., Altindal Ş., Tunc T.

JOURNAL OF APPLIED PHYSICS , cilt.108, sa.3, 2010 (SCI-Expanded)

12. Temperature and frequency dependent dielectric properties of Au/Bi 4Ti3O12/SiO2/Si (MFIS) structures

ALTINDAL Ş., Parlaktürk F., TATAROĞLU A., BÜLBÜL M. M.

Journal of Optoelectronics and Advanced Materials , cilt.12, sa.10, ss.2139-2143, 2010 (SCI-Expanded)

13. The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range

Zeyrek S., Buelbuel M. M., Altindal Ş., Baykul M. C., Yuezer H.

BRAZILIAN JOURNAL OF PHYSICS , cilt.38, sa.4, ss.591-597, 2008 (SCI-Expanded)

14. Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures

Afandiyeva I. M., Doekme İ., Altindal Ş., Buelbuel M. M., TATAROĞLU A.

MICROELECTRONIC ENGINEERING , cilt.85, sa.2, ss.247-252, 2008 (SCI-Expanded)

15. The effect of Co-60 (gamma-ray) irradiation Au/SnO2/n-Si on the electrical characteristics of (MIS) structures

Goekcen M., TATAROĞLU A., Altindal Ş., Buelbuel M. M.

RADIATION PHYSICS AND CHEMISTRY , cilt.77, sa.1, ss.74-78, 2008 (SCI-Expanded)

16. The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)

Altindal Ş., Kanbur H., TATAROĞLU A., Buelbuel M. M.

PHYSICA B-CONDENSED MATTER , cilt.399, sa.2, ss.146-154, 2007 (SCI-Expanded)

17. The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

Dokme İ., Altindal Ş., Bulbul M. M.

APPLIED SURFACE SCIENCE , cilt.252, sa.22, ss.7749-7754, 2006 (SCI-Expanded)

18. The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range

Altindal Ş., Dokme İ., Bulbul M. M., Yalcin N., Serin T.

MICROELECTRONIC ENGINEERING , cilt.83, sa.3, ss.499-505, 2006 (SCI-Expanded)

19. On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

Bulbul M. M., Zeyrek S., Altindal Ş., Yuzer H.

MICROELECTRONIC ENGINEERING , cilt.83, sa.3, ss.577-581, 2006 (SCI-Expanded)

20. Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

Zeyrek S., Altindal Ş., Yuzer H., Bulbul M. M.

APPLIED SURFACE SCIENCE , cilt.252, sa.8, ss.2999-3010, 2006 (SCI-Expanded)

21. Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

Tataroğlu A., Altindal Ş., Bulbul M. M.

MICROELECTRONIC ENGINEERING , cilt.81, sa.1, ss.140-149, 2005 (SCI-Expanded)

22. Segregation and non-segregation of Ge for H(Cl): Si(001)/Ge-(2x1) and H(Cl): Si(001)/Ge-(3x1)

Bulbul M. M., ÇAKMAK M., Srivastava G., Colakoglu K.

SURFACE SCIENCE , cilt.507, ss.40-45, 2002 (SCI-Expanded)

23. First-order Raman spectra from In1-x-yGaxAlyAs epitaxial layers grown on InP substrates

Bulbul M. M., Farrant G., Smith S.

EUROPEAN PHYSICAL JOURNAL B , cilt.24, sa.1, ss.3-6, 2001 (SCI-Expanded)

24. Effect of hydrogenation on the adsorption of Ge on Si(001)

Bulbul M. M., ÇAKMAK M., Srivastava G., Colakoglu K.

PHYSICAL REVIEW B , cilt.64, sa.15, 2001 (SCI-Expanded)

25. Infrared spectroscopic study on the T-d-type clathrates: Cd(Cyclohexylamine)(2)M(CN)(4)center dot 2C(6)H(6) (M = Cd or Hg)

Kantarci Z., Karabacak M., Bulbul M. M.

JOURNAL OF INCLUSION PHENOMENA AND MACROCYCLIC CHEMISTRY , cilt.40, sa.4, ss.317-321, 2001 (SCI-Expanded)

26. Infrared spectroscopic and gravimetric studies on the dicyclohexylaminemetal(II) tetracyanonickellate(II) host-aromatic guest systems

Kantarci Z., Bulbul M. M.

JOURNAL OF INCLUSION PHENOMENA AND MACROCYCLIC CHEMISTRY , cilt.40, ss.105-116, 2001 (SCI-Expanded)

27. Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality

Bulbul M. M., Smith S., Obradovic B., Cheng T., Foxon C.

EUROPEAN PHYSICAL JOURNAL B , cilt.14, sa.3, ss.423-429, 2000 (SCI-Expanded)

28. Far-infrared and Raman analysis of phonons and phonon interface modes in GaN epilayers on GaAs and GaP substrates

Mirjalili G., Parker T., Farjami Shayesteh S., BÜLBÜL M. M., Smith S., Cheng T., et al.

Physical Review B - Condensed Matter and Materials Physics , cilt.57, sa.8, ss.4656-4663, 1998 (SCI-Expanded)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 11

1. Hybrid organic-inorganic ZnO/PCBM electron transport layer with perovskite solar cell material CH3NH3PbI3in numerical simulation with SCAPS

Alaiawi A. A. L., BÜLBÜL M. M., Jafar A. M.

5th International Conference on Applied Sciences, ICAS 2023, Baghdad, Irak, 26 - 27 Ağustos 2023, cilt.3097, (Tam Metin Bildiri)

2. Electrical characteristics of Au/n-Si structure with perylene interfacial layer at room temperature

BENGİ S., BÜLBÜL M. M.

5th International Conference on Materials Science and Nanotechnology for Next Generation, 4 - 06 Haziran 2018, (Tam Metin Bildiri)

3. The effect of illumination on the electrical characterization of Al/HfO2/p-Si MOS device

YÜKSELTÜRK E., BENGİ S., BÜLBÜL M. M.

5th International Conference on Materials Science and Nanotechnology for Next Generation, 4 - 06 Ekim 2018, (Özet Bildiri)

4. Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel,

YÜKSELTÜRK E., BENGİ S., BÜLBÜL M. M.

2nd International Conference on Innovations in NaturalScience and Engineering, KYİV, Ukrayna, 7 - 10 Eylül 2018, (Özet Bildiri)

5. Capacitance-voltage and Conductance-voltageCharacteristics of Au/C20H12/n-Si Structure at high temperatures

BENGİ S., YÜKSELTÜRK E., BÜLBÜL M. M.

2nd International Conference on Innovations in Natural Science and Engineering, Kye, Ukrayna, 7 - 10 Eylül 2018, (Özet Bildiri)

6. Capacitance - voltage and Conductance - voltage Characteristics of Au/ C20H12/n-Si Structure at high temperatures

BENGİ S., YÜKSELTÜRK E., BÜLBÜL M. M.

2nd International Conference on Innovations in Natural Science and Engineering, 7 - 09 Eylül 2018, (Özet Bildiri)

7. Al/P3HT/p-Si (MPS) Schottky Diyotlarının Oda Sıcaklığında Akım-Gerilim Karakteristiklerinin I-V, Norde ve Cheung Metodu Kullanılarak İncelenmesi

YÜKSELTÜRK E., ÇOTUK M., BÜLBÜL M. M., ZEYREK S.

23. Yoğun Madde Fiziği – Ankara Toplantısı, Ankara, Türkiye, 22 Aralık 2017, (Özet Bildiri)

8. On the profıle of temperature dependent main electrical parameters inAl/P3HT/p-Si (MPS) structures at low temperatures

YÜKSELTÜRK E., ÇOTUK M., BÜLBÜL M. M., ALTINDAL Ş., ZEYREK S.

InternationalCongress on Semiconductor Materials and Devices (ICSMD-2017), Konya, Türkiye, 17 - 19 Ağustos 2017, (Özet Bildiri)

Metrikler

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1100

H-İndeks (WoS)

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1142

H-İndeks (Scopus)

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