Doç. Dr. SEÇKİN ALTINDAL YERİŞKİN

Yayın Ağı

Makaleler 35

1. Comprehensive Investigation of Negative Capacitance and Inductive Behavior in Pure and 3% and 5% Ni-Doped PVP-Based Au/n-Si (MS) Schottky Diodes (SDs)

Abidinov A., Afandiyeva I., Bakhtiyarli E., ALTINDAL YERİŞKİN S., Hameed S. A.

ACS Applied Electronic Materials , cilt.7, sa.20, ss.9399-9407, 2025 (SCI-Expanded)

2. Photonic sensor based quaternary metal oxide semiconductor by controlling of solar photon intensity

Yıldız K., Altındal Yerişkin S., Khalkhali A., Dere A., Yakuphanoglu F.

Sensors and Actuators A: Physical , cilt.393, 2025 (SCI-Expanded)

3. Measurement of high temperature sensitivity of Al/(Zn:Cd:Ni:TiO2)/p-Si structure based on capacitance/conductance-voltage (C/G-V)

Bengi S., ALTINDAL YERİŞKİN S., Khalkhali A., Dere A., Yıldız K., Yakuphanoglu F.

Physica Scripta , cilt.100, sa.9, 2025 (SCI-Expanded)

4. A Study Regarding Dielectric Response and ac Electrical Conductivity of Schottky Structures (SSs) Interlaid with (Fe3O4-PVA) by Using Dielectric Spectroscopy Method

Khalkhali A., ERBİLEN TANRIKULU E., ALTINDAL YERİŞKİN S., Arslan Alsaç A., YILDIZ K.

Journal of Inorganic and Organometallic Polymers and Materials , cilt.35, sa.8, ss.6440-6457, 2025 (SCI-Expanded)

5. Surface states and series resistance effects in Au/(HgS-PVA)/n-Si capacitors

SEVGİLİ Ö., Taşçıoğlu İ., Boughdachi S., ALTINDAL YERİŞKİN S., AZIZIAN-KALANDARAGH Y.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.15, 2025 (SCI-Expanded)

6. The investigation of main electrical parameters, energy dependent profiles of surface states and their lifetimes in the Au/n-Si Schottky diodes with (PVA-Fe₃O₄) interlayer depend on frequency and voltage

YILDIZ K., Khalkhali A., Uzun A., Tanrikulu E., Yeriskin S., Alsac A. A.

PHYSICA SCRIPTA , cilt.100, sa.1, 2025 (SCI-Expanded)

7. The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature

Akın B., A.Hameed S., ALTINDAL YERİŞKİN S., ULUSOY M., Durmuş H.

Materials Science in Semiconductor Processing , cilt.184, 2024 (SCI-Expanded)

8. Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer

ALTINDAL YERİŞKİN S., Taşçıoğlu İ., BADALI Y.

Journal of Physics D: Applied Physics , cilt.57, sa.31, 2024 (SCI-Expanded)

9. Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

Taşçıoğlu İ., BADALI Y., ALTINDAL YERİŞKİN S.

Physica Scripta , cilt.99, sa.8, 2024 (SCI-Expanded)

10. The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities

ULUSOY M., Koçyiğit S., TATAROĞLU A., ALTINDAL YERİŞKİN S.

ACS Omega , cilt.9, sa.29, ss.32243-32255, 2024 (SCI-Expanded)

11. Quaternary functional semiconductor devices

ALTINDAL YERİŞKİN S., Dere A., Orman Y., Yakuphanoğlu F.

Physica Scripta , cilt.99, sa.7, 2024 (SCI-Expanded)

12. On the Voltage Dependent Series Resistance, Interface Traps, and Conduction Mechanisms in the Al/(Ti-doped DLC)/p-Si/Au Schottky Barrier Diodes (SBDs)

hameed s., BERKÜN Ö., Altındal Yerişkin S.

Gazi University Journal of Science Part A: Engineering and Innovation , cilt.11, sa.1, ss.235-244, 2024 (Hakemli Dergi)

13. Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics

Delen N., Tascioglu I., ALTINDAL YERİŞKİN S., ÖZBAY A.

Gazi University Journal of Science , cilt.37, sa.1, ss.457-463, 2024 (ESCI)

14. Investigation of the interface state characteristics of the Al/Al2O3/Ge/p-Si heterostructure over a wide frequency range by capacitance and conductance measurements

Akın B., ULUSOY M., ALTINDAL YERİŞKİN S.

Materials Science in Semiconductor Processing , cilt.170, 2024 (SCI-Expanded)

15. Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0.3Zn0.7O) interfacial layer in the wide range of frequency and voltage

Delen N., Altındal Yerişkin S., ÖZBAY A., Taşçıoğlu İ.

Physica B: Condensed Matter , cilt.665, 2023 (SCI-Expanded)

16. Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers

Taşçıoğlu I., Pirgholi-Givi G., Yerişkin S., AZIZIAN-KALANDARAGH Y.

Journal of Sol-Gel Science and Technology , cilt.107, sa.3, ss.536-547, 2023 (SCI-Expanded)

17. Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

Buyukbas-Ulusan A., Tataroğlu A., Altındal Yerişkin S.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY , cilt.12, ss.83010, 2023 (SCI-Expanded)

18. Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3Interfacial Layer over Wide Temperature Range

Buyukbas-Ulusan A., TATAROĞLU A., Altlndal-Yerişkin S.

ECS Journal of Solid State Science and Technology , cilt.12, sa.8, 2023 (SCI-Expanded)

19. Dielectric properties of MS diodes with Ag:ZnO doped PVP interfacial layer depending on voltage and frequency

Altındal Yerişkin S., ERBİLEN TANRIKULU E., ULUSOY M.

Materials Chemistry and Physics , cilt.303, 2023 (SCI-Expanded)

20. Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure

Ata D., Yeriskin S., Tataroglu A., Balbasi M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS , cilt.169, 2022 (SCI-Expanded)

21. On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C(29)H(32)O17)/p-Si (MPS) structures in wide range of frequency and voltage

ERBİLEN TANRIKULU E., Yeriskin S.

PHYSICA B-CONDENSED MATTER , cilt.623, 2021 (SCI-Expanded)

22. Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes

Cetinkaya H. G., Demirezen S., Yeriskin S.

PHYSICA B-CONDENSED MATTER , cilt.621, 2021 (SCI-Expanded)

23. Frequency and voltage-dependent dielectric spectroscopy characterization of Al/(Coumarin-PVA)/p-Si structures

DEMİREZEN S., Yeriskin S.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.20, ss.25339-25349, 2021 (SCI-Expanded)

24. Influence of graphene doping rate in PVA organic thin film on the performance of Al/p-Si structure

Yeriskin S., ŞAFAK ASAR Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.18, ss.22860-22867, 2021 (SCI-Expanded)

25. Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures

Karadas S., Yeriskin S., BALBAŞI M., Azizian-Kalandaragh Y.

Journal of Physics and Chemistry of Solids , cilt.148, 2021 (SCI-Expanded) Sürdürülebilir Kalkınma

26. Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi

Altındal Yerişkin S., ŞAFAK ASAR Y.

Gazi Üniversitesi Fen Fakültesi Dergisi , 2020 (Hakemli Dergi)

27. Illumination Dependent Electrical Data Identification of the CdZnO Interlayered Metal-Semiconductor Structures

Tan S. O., Tascioglu I., Altindal Yeriskin S., Tecimer H., Yakuphanoglu F.

SILICON , sa.12, ss.2885-2891, 2020 (SCI-Expanded)

28. Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu₂O-CuO)-doped PVA interfacial layer

Buyukbas-Ulusan A., Yeriskin S., Tataroglu A., Balbasi M., Azizian-Kalandaragh Y.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , sa.5-6, ss.256-260, 2020 (SCI-Expanded)

29. A detailed comparative study on electrical and photovoltaic characteristics of Al/p-Si photodiodes with coumarin-doped PVA interfacial layer: the effect of doping concentration

DEMİREZEN S., Altindal Yeriskin S.

POLYMER BULLETIN , cilt.77, sa.1, ss.49-71, 2020 (SCI-Expanded) Sürdürülebilir Kalkınma

30. The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature

Yeriskin S., BALBAŞI M., Orak I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , sa.18, ss.14040-14048, 2017 (SCI-Expanded)

31. Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures

Yeriskin S., Balbasi M., Demirezen S.

INDIAN JOURNAL OF PHYSICS , sa.4, ss.421-430, 2017 (SCI-Expanded)

32. Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped-PVA/n-Si (MPS) structures

Yeriskin S., BALBAŞI M., TATAROĞLU A.

JOURNAL OF APPLIED POLYMER SCIENCE , sa.33, 2016 (SCI-Expanded)

33. The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method

Kaya A., Alialy S., Demirezen S., Balbasi M., Yeriskin S., Aytimur A.

CERAMICS INTERNATIONAL , sa.2, ss.3322-3329, 2016 (SCI-Expanded)

34. Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

Demirezen S., Kaya A., Yeriskin S., Balbasi M., Uslu I.

Results in Physics , ss.180-185, 2016 (SCI-Expanded)

35. Electrical and Dielectric Characteristics of Al/Polyindole Schottky Barrier Diodes. II. Frequency Dependence

Yeriskin S., ÜNAL H. İ., SARI B.

JOURNAL OF APPLIED POLYMER SCIENCE , sa.1, ss.390-396, 2011 (SCI-Expanded)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 4

1. The dielectric characteristics of Au/n-GaAs junction for different frequencies at 120 K

Altındal Yerişkin S., YILDIRIM M., DURMUŞ P., DÖKME İ.

5th Internatıonal conference on materials science and advanced-nanotechnologies for next generation (MSNG2018), 4 - 06 Ekim 2018, (Tam Metin Bildiri)

2. Investigation of Admittance Characteristics of Au/2 graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si MIS structure

Altındal Yerişkin S., YILDIRIM M., DURMUŞ P., DÖKME İ.

5th Internatıonal conference on materials science and advanced-nanotechnologies for next generation (MSNG2018), 4 - 06 Ekim 2018, (Tam Metin Bildiri)

3. The capacitance characteristics of Au/n-GaAs junction in the temperature range of 80-300 K

Altındal Yerişkin S., YILDIRIM M., DURMUŞ P., DÖKME İ.

5th Internatıonal conference on materials science and advanced-nanotechnologies for next generation (MSNG2018), 4 - 06 Ekim 2018, (Tam Metin Bildiri)

4. Frequency Dependence of Electrical Parameters of Au/n-Si structures with 2 graphene–cobalt doped (Ca3Co4Ga0.001Ox) interfacial layer

Altındal Yerişkin S., YILDIRIM M., DURMUŞ P., DÖKME İ.

5th Internatıonal conference on materials science and advanced-nanotechnologies for next generation (MSNG2018), 4 - 06 Ekim 2018, (Tam Metin Bildiri)

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