Makaleler
31
Tümü (31)
SCI-E, SSCI, AHCI (27)
SCI-E, SSCI, AHCI, ESCI (27)
Scopus (27)
Diğer Yayınlar (4)
14. Energy Relaxation of Electrons in InGaN Quantum Wells
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
, sa.4, ss.1565-1569, 2015 (SCI-Expanded)
25. Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.21, sa.2, ss.185-191, 2010 (SCI-Expanded)
26. Effects of annealing on the structural properties of GaAs-based quantum well solar cells
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.11, sa.11, ss.1627-1631, 2009 (SCI-Expanded)
28. Preparation of Carbon Nanospheres by An Autoclave Type Reactor
Balkan Physics Letters
, cilt.1, ss.401-403, 2008 (Hakemli Dergi)
29. Electrical Characteristics of Au In0 25Ga0 75As GaAs Structures
FİZİKA
, cilt.1, ss.261-263, 2008 (Hakemli Dergi)
30. The structural and Optical Analysis of the Graded 1 micrometer Thick n GaAs1 xPx GaAs Structures
FİZİKA
, cilt.1, sa.1, ss.18-20, 2008 (Hakemli Dergi)
31. Analyze of Defects in InGaAs epilayer with High resolution X ray diffraction
FİZİKA
, cilt.1, ss.179-183, 2008 (Hakemli Dergi)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
37
1. AB-INITIO STUDY OF ELECTRONIC PROPERTY INVESTIGATIONS OF MGF2 MONOLAYERS UNDER STRAIN
13TH INTERNATIONAL İSTANBUL SCIENTIFIC RESEARCH CONGRESS, İstanbul, Türkiye, 1 - 03 Ekim 2024, ss.845-856, (Tam Metin Bildiri)
3. COMPARATIVE ELECTRONIC PROPERTIES OF KAGOME-TYPE LATTICE SILICENE AND GRAPHENE: A DFT STUDY
13TH INTERNATIONAL İSTANBUL SCIENTIFIC RESEARCH CONGRESS, İstanbul, Türkiye, 1 - 03 Ekim 2024, ss.857-868, (Tam Metin Bildiri)
10. DFT Investigation of Electronic and Optical Properties of Silver Doped Germanene
Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.240, (Özet Bildiri)
14. Electrical characteristics of GaAs AlGaAs Structures in thewide Frequency ranges
2nd International Congress on The World of Technology and Advanced Materials, Kırşehir, Türkiye, 28 Eylül - 02 Ekim 2016, (Tam Metin Bildiri)
15. Ultraince Bariyere Sahip AlN GaN ve InAlN GaN HEMT Yapıların Yapısal ve Yüzey Özelliklerinin İncelenmesi
18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.72
16. Ultraince Bariyerli GaN Temelli HEMT lerde Elektron Gazının Elektriksel Özellikleri ve Saçılma Analizleri
18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Türkiye, 23 Eylül 2016, cilt.50
17. Numerical Investigation Of 2DEG Properties In Ultrathin Barrier AlN GaN Heterostructures With AlGaN and InGaN Back Barriers
18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.47
18. Ultraince Bariyerli AlN GaN Çoklu Yapılarda Farklı Katmanların 2BEG Üzerine Etkisi
ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.164
19. Ultraince AlN GaN Çokluyapılarda Farklı Katmanların Katkılanmasının 2BEG Üzerine etkisi
ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016
20. Li KAtkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin DFT ile İncelenmesi
ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016
21. P tipi ve N tipi InGaN Arka Bariyerli Ultraince AlInN GaN Çoklu Yapılarda İki Boyutlu Elektron Gazı
ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.163
22. Li Katkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin İncelenmesi
ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.151
23. ELECTRONIC PROPERTIES OF ARMCHAIR GRAPHENE NANORIBBONS WITHNICKEL TERMINATION
9th International Physics Conference of the Balkan Physical Union, İstanbul, Türkiye, 24 - 27 Ağustos 2015, (Özet Bildiri)
27. Two diodes model in the forward bias current voltage I V characteristics of Al0 33Ga0 67As n GaAs at room temperature
1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015
30. Electrical characteristics of GaAs AlGaAs Structures in the wide Frequency and applied bias voltage ranges at room temperature
1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015
33. Investigation of the effect of the arsenic impurity on the electronic and optical properties of β–Si3N4dielectric material
Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.402, (Özet Bildiri)
35. First Principles Study of Interaction Between Ru and Graphene Nanoribbons
2nd Int. Conf. on Comp. for Sci. and Techno, Niğde, Türkiye, 9 - 11 Temmuz 2012, ss.70, (Özet Bildiri)
36. AlGaN/GaN-temelli Yuksek Hareketlilige Sahip Transistorlerde InGaN Geribariyerin Dislokasyon Yogunluguna Etkisi
ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.131, (Özet Bildiri)
37. Influence of thermal annealing on the structure and optical properties of DC magnetron sputtered titanium dioxide thin films
13th European Conference on Applications of Surface and Interface Analysis (ECASIA 09), Antalya, Türkiye, 18 - 23 Ekim 2009, (Özet Bildiri)
Kitaplar
2
1. Chapter 15: The Effects of the Interaction of Transition Metals on the Electronic Properties of the Graphene Nanosheets and Nanoribbons
Graphene Science Handbook Vol.3, Mahmood Aliofkhazraei,Nasar Ali,William I. Milne,Cengiz S. Ozkan,Stanislaw Mitura,Juana L. Gervasoni, Editör, CRC, New York , Florida, ss.221-235, 2016
2. Nanoteknoloji Devrimini Anlamak
Nobel Yayınevi, 2014