Prof.Dr. BEYZA LİŞESİVDİN

Lişesivdin S. B., Sarikavak-Lisesivdin B.

Advances in Condensed Matter Physics , cilt.2023, 2023 (SCI-Expanded)

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

Narin P., Kutlu-Narin E., Atmaca G., Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., ÖZBAY E.

SURFACE AND INTERFACE ANALYSIS , cilt.54, sa.5, ss.576-583, 2022 (SCI-Expanded)

gpaw-tools – higher-level user interaction scripts for GPAW calculations and interatomic potential based structure optimization

Computational Materials Science , cilt.204, 2022 (SCI-Expanded)

Investigation of Structural and Optical Properties of ZnO Thin Films Grown on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by Corona Discharge Plasma

Kutlu-Narin E., Narin P., LİŞESİVDİN S. B., Sarikavak-Lisesivdin B.

ADVANCES IN CONDENSED MATTER PHYSICS , cilt.2021, 2021 (SCI-Expanded)

Structural parameters and electronic properties of 2D carbon allotrope: Graphene with a kagome lattice structure

Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., Ozbay E., Jelezko F.

CHEMICAL PHYSICS LETTERS , cilt.760, 2020 (SCI-Expanded)

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

Abbas J. M. A., Atmaca G., NARİN P., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S. B.

JOURNAL OF ELECTRONIC MATERIALS , cilt.46, sa.8, ss.5278-5286, 2017 (SCI-Expanded)

The effect of doping in different layers on 2DEG for ultrathin-barrier A1N/GaN heterostructures

Al Abbas J. M., NARİN P., Atmaca G., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S. B.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.11, ss.328-331, 2017 (SCI-Expanded)

Electronic structure of beta-Si3N4 crystals with substitutional icosagen group impurities

Kutlu E., NARİN P., Atmaca G., Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., Ozbay E.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.19, ss.278-282, 2017 (SCI-Expanded)

Effect of substitutional As impurity on electrical and optical properties of beta-Si3N4 structure

Kutlu E., NARİN P., Atmaca G., Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

MATERIALS RESEARCH BULLETIN , cilt.83, ss.128-134, 2016 (SCI-Expanded)

Electronic properties of Li-doped zigzag graphene nanoribbons

NARİN P., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.84, ss.543-547, 2016 (SCI-Expanded)

Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer

Atmaca G., NARİN P., Sarikavak-Lisesivdin B., Lisesivdin S. B.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.79, ss.67-71, 2016 (SCI-Expanded)

Energy Relaxation of Electrons in InGaN Quantum Wells

Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., Balkan N., Atmaca G., NARİN P., Cakmak H., et al.

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE , sa.4, ss.1565-1569, 2015 (SCI-Expanded)

Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

Atmaca G., Narin P., Lisesivdin S. B., Kasap M., Sarikavak-Lisesivdin B.

PHILOSOPHICAL MAGAZINE , cilt.95, sa.1, ss.79-89, 2015 (SCI-Expanded)

Numerical optimization of two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures (0.10 < x < 0.30)

Sarikavak-Lisesivdin B.

PHILOSOPHICAL MAGAZINE , cilt.93, sa.9, ss.1124-1131, 2013 (SCI-Expanded)

First-principles calculations of Pd-terminated symmetrical armchair graphene nanoribbons

Kuloglu A. F., Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

COMPUTATIONAL MATERIALS SCIENCE , cilt.68, ss.18-22, 2013 (SCI-Expanded)

The effect of InxGa1-xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures (0.05 <= x <= 0.14)

Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

CURRENT APPLIED PHYSICS , cilt.13, sa.1, ss.224-227, 2013 (SCI-Expanded)

Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons

Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

MOLECULAR PHYSICS , cilt.110, sa.18, ss.2295-2300, 2012 (SCI-Expanded)

Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition

Yildiz A., Tasli P., Sarikavak B., Lisesivdin S. B., Ozturk M. K., Kasap M., et al.

SEMICONDUCTORS , cilt.45, sa.1, ss.33-36, 2011 (SCI-Expanded)

Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses

Tasli P., Sarikavak B., Atmaca G., Elibol K., Kuloglu A. F., Lisesivdin S. B.

PHYSICA B-CONDENSED MATTER , cilt.405, sa.18, ss.4020-4026, 2010 (SCI-Expanded)

Influence of thermal annealing on the structure and optical properties of d.c. magnetron sputtered titanium dioxide thin films

Kars İ., Cetin S. Ş., KINACI B., Sarikavak B., Bengi A., Altuntas H., et al.

SURFACE AND INTERFACE ANALYSIS , cilt.42, ss.1247-1251, 2010 (SCI-Expanded)

Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

Altuntas H., Bengi A., Asar T., Aydemir U., Sarikavak B., Özen Y., et al.

SURFACE AND INTERFACE ANALYSIS , cilt.42, sa.6-7, ss.1257-1260, 2010 (SCI-Expanded)

Interdiffusion phenomena in InGaAs/GaAs superlattice structures

Sarikavak B., Ozturk M. K., Mammadov T. S., Ozcelik S.

CRYSTAL RESEARCH AND TECHNOLOGY , cilt.45, sa.5, ss.517-524, 2010 (SCI-Expanded)

Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

Ozturk M. K., Hongbo Y., Sarikavak B., Korcak S., Ozcelik S., Ozbay E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.21, sa.2, ss.185-191, 2010 (SCI-Expanded)

Effects of annealing on the structural properties of GaAs-based quantum well solar cells

Asar T., Sarikavak B., Ozturk M. K., Mammadov T., Ozcelik S.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.11, sa.11, ss.1627-1631, 2009 (SCI-Expanded)

MBE-growth and characterization of InxGa1-xAs/GaAs (x=0.15) superlattice

Sarikavak B., Oeztuerk M. K., Altuntas H., Mammedov T. S., Altindal Ş., Oezcelik S.

REVISTA MEXICANA DE FISICA , cilt.54, sa.6, ss.416-421, 2008 (SCI-Expanded)

Diğer Dergilerde Yayınlanan Makaleler

Preparation of Carbon Nanospheres by An Autoclave Type Reactor

Balkan Physics Letters , cilt.1, ss.401-403, 2008 (Hakemli Dergi)

Analyze of Defects in InGaAs epilayer with High resolution X ray diffraction

FİZİKA , cilt.1, ss.179-183, 2008 (Hakemli Dergi)

Electrical Characteristics of Au In0 25Ga0 75As GaAs Structures

FİZİKA , cilt.1, ss.261-263, 2008 (Hakemli Dergi)

The structural and Optical Analysis of the Graded 1 micrometer Thick n GaAs1 xPx GaAs Structures

FİZİKA , cilt.1, sa.1, ss.18-20, 2008 (Hakemli Dergi)

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Ab-initio Study of Optical Property Investigations for Bulk Aluminium Sulfide

II. International Europa Scientific Researches and Technological Development Congress, Baku, Azerbaycan, 26 Kasım 2023

Exploring the Electronic Properties of Bulk Al2S3: A Density Functional Theory Study

Han T., LİŞESİVDİN B., LİŞESİVDİN S. B.

II. International Europa Scientific Researches and Technological Development Congress, Baku, Azerbaycan, 26 Kasım 2023

Germanene: DFT investigation of Electronic and Optical Properties changing with Au and Cu doping

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.170

Multi-Code, Low-Barrier Python Toolkit For MD/DFT Studies

Ansari M. T., NARİN P., LİŞESİVDİN S. B., LİŞESİVDİN B., ÖZBAY E.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.104

Doped Tin Carbide (SnC) Based Nanostructure for Applications In Nanoelectronics

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.150

gpaw-tools: UI/GUI scripts for GPAW software

Han T., LİŞESİVDİN B., LİŞESİVDİN S. B.

2022 Workshop on Recent Developments in Electronic Structure (ES22), New York, Amerika Birleşik Devletleri, 31 Mayıs 2022

DFT Investigation of Electronic and Optical Properties of Silver Doped Germanene

Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.240

Spin-polarized DFT calculations of nitrogen-vacancy color centers in diamond with various XC potentials

LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E., Jelezko F.

Quantum Optics and Informatics Meeting – 4 (Kobit 4), İzmir, Türkiye, 14 - 15 Mayıs 2020

Calculation of Carrier Density and probability densitycalculations of heterostructures

WITAM 2018, 21 - 23 Eylül 2018

HR-XRD Characterizations of Ultra Thin Barrier HEMTStructures

ÇAĞIRTEKİN A. O., NARİN P., LİŞESİVDİN B.

WITAM 2018, 21 - 23 Eylül 2018

Electrical characteristics of GaAs AlGaAs Structures in thewide Frequency ranges

Bektaş C., GÜNEŞ M., LİŞESİVDİN B., Henini M., ALTINDAL Ş.

2nd International Congress on The World of Technology and Advanced Materials, Kırşehir, Türkiye, 28 Eylül - 02 Ekim 2016

Ultraince Bariyere Sahip AlN GaN ve InAlN GaN HEMT Yapıların Yapısal ve Yüzey Özelliklerinin İncelenmesi

Narin P., Kutlu E., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E.

18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.72

Ultraince Bariyerli GaN Temelli HEMT lerde Elektron Gazının Elektriksel Özellikleri ve Saçılma Analizleri

Öztürk M., Arslan E., Narin P., LİŞESİVDİN S. B., LİŞESİVDİN B., ÖZBAY E.

18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Türkiye, 23 Eylül 2016, cilt.50

Numerical Investigation Of 2DEG Properties In Ultrathin Barrier AlN GaN Heterostructures With AlGaN and InGaN Back Barriers

Al Abbas J. M., Atmaca G., Narin P., Kutlu E., LİŞESİVDİN B., LİŞESİVDİN S. B.

18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.47

P tipi ve N tipi InGaN Arka Bariyerli Ultraince AlInN GaN Çoklu Yapılarda İki Boyutlu Elektron Gazı

AlAbbas J., Narin P., Kutlu E., Atmaca G., LİŞESİVDİN S. B., LİŞESİVDİN B.

ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.163

Li KAtkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin DFT ile İncelenmesi

KUTLU E., NARİN P., ATMACA G., AL ABBAS J. M., LİŞESİVDİN B., LİŞESİVDİN S. B.

ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016

Ultraince AlN GaN Çokluyapılarda Farklı Katmanların Katkılanmasının 2BEG Üzerine etkisi

AL ABBAS J. M., NARİN P., ATMACA G., KUTLU E., LİŞESİVDİN S. B., LİŞESİVDİN B.

ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016

Ultraince Bariyerli AlN GaN Çoklu Yapılarda Farklı Katmanların 2BEG Üzerine Etkisi

Al Abbas J., Atmaca G., Narin P., Kutlu E., LİŞESİVDİN S. B., LİŞESİVDİN B.

ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.164

Li Katkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin İncelenmesi

Kutlu E., Narin P., Atmaca G., Al Abbas J., LİŞESİVDİN B., LİŞESİVDİN S. B.

ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.151

ELECTRONIC PROPERTIES OF ARMCHAIR GRAPHENE NANORIBBONS WITHNICKEL TERMINATION

9th International Physics Conference of the Balkan Physical Union, İstanbul, Türkiye, 24 - 27 Ağustos 2015

The effect of in situ Si3N4 passivation on hot electron energy relaxation rates in AlGaN GaN Hetrostructures

Atmaca G., Malin T., Kutlu E., Ardalı Ş., Narin P., Mansurov V., et al.

GaN InN AlN 2015, 23 - 25 Mayıs 2015

First Principle Calculations of Electrical Properties of lnsulator Wurtzite the Si3N4 with the Aluminum lndium and Gallium lmpurities

Kutlu E., Narin P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1. Uluslararası Organik Elektronik Malzeme Teknolojileri Konferansı, 25 - 28 Mart 2015

Two diodes model in the forward bias current voltage I V characteristics of Al0 33Ga0 67As n GaAs at room temperature

GÜNEŞ M., LİŞESİVDİN B., Henini M., ALTINDAL Ş.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

Investigation of Optical Properties of the Beta Si3N4 Structure doped with some group IIIA Elements

Narin P., Kutlu E., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1. Uluslararası Organik Elektronik Malzeme Teknolojileri Konferansı, 25 - 28 Mart 2015

First Principle Calculations of Electrical Properties of Insulator Wurtzite Beta Si3N4 with the Aluminum Indium and Gallium Impurities

Kutlu E., Narin P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

Investigation of Optical Properties of the Si3N4 structure doped with some Group IIIA Elements

Narin P., Kutlu E., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

Electrical characteristics of GaAs AlGaAs Structures in the wide Frequency and applied bias voltage ranges at room temperature

GÜNEŞ M., LİŞESİVDİN B., PESEN E., Henini M., ALTINDAL Ş.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures

Atmaca G., Malin T., Kutlu E., Ardalı Ş., Narin P., Mansurov V., et al.

10th All-Russian Conference Gallium, aluminum and indium nitrides, 23 - 25 Mart 2015

Ab initio study of oxygen and arsenic impurities on non-linear optical properties of β–Si3N4 material

Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

Конференция И Школа Молодых Учёных По Актуальным Проблемам Физики Полупроводниковых Структур, Novosibirsk, Rusya, 15 Eylül 2014, ss.77

Investigation of the effect of the arsenic impurity on the electronic and optical properties of β–Si3N4dielectric material

LİŞESİVDİN S. B., Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN B.

Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.402

A Numerical Investigation on Electronic Properties of Two Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

NARİN P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B., KASAP M.

Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013, ss.529

First Principles Study of Interaction Between Ru and Graphene Nanoribbons

LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E.

2nd Int. Conf. on Comp. for Sci. and Techno, Niğde, Türkiye, 9 - 11 Temmuz 2012, ss.70

AlGaN/GaN-temelli Yuksek Hareketlilige Sahip Transistorlerde InGaN Geribariyerin Dislokasyon Yogunluguna Etkisi

LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E.

ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.131

Influence of thermal annealing on the structure and optical properties of DC magnetron sputtered titanium dioxide thin films

Kars Durukan İ., Aydın S. Ş., Kınacı B., Lişesivdin B., Bengi A., Altuntaş H., et al.

13th European Conference on Applications of Surface and Interface Analysis (ECASIA 09), Antalya, Türkiye, 18 - 23 Ekim 2009

Kitap & Kitap Bölümleri

Chapter 15: The Effects of the Interaction of Transition Metals on the Electronic Properties of the Graphene Nanosheets and Nanoribbons

Lişesivdin S. B., Lişesivdin B., Özbay E.

Graphene Science Handbook Vol.3, Mahmood Aliofkhazraei,Nasar Ali,William I. Milne,Cengiz S. Ozkan,Stanislaw Mitura,Juana L. Gervasoni, Editör, CRC, New York , Florida, ss.221-235, 2016

Nanoteknoloji Devrimini Anlamak