Doç. Dr. ESRA ERBİLEN TANRIKULU

Yayın Ağı

Makaleler 24

1. Comparative dielectric analysis of Schottky diodes from the perspective of the high-dielectric interlayers (pure, N, S, Cu doped DLC) and light exposure

Balıkçı L. M., ERBİLEN TANRIKULU E., Karatay K., ALTINDAL Ş.

Diamond and Related Materials , cilt.160, 2025 (SCI-Expanded)

2. A Study Regarding Dielectric Response and ac Electrical Conductivity of Schottky Structures (SSs) Interlaid with (Fe3O4-PVA) by Using Dielectric Spectroscopy Method

Khalkhali A., ERBİLEN TANRIKULU E., ALTINDAL YERİŞKİN S., Arslan Alsaç A., YILDIZ K.

Journal of Inorganic and Organometallic Polymers and Materials , cilt.35, sa.8, ss.6440-6457, 2025 (SCI-Expanded)

3. The investigation of main electrical parameters, energy dependent profiles of surface states and their lifetimes in the Au/n-Si Schottky diodes with (PVA-Fe₃O₄) interlayer depend on frequency and voltage

YILDIZ K., Khalkhali A., Uzun A., Tanrikulu E., Yeriskin S., Alsac A. A.

PHYSICA SCRIPTA , cilt.100, sa.1, 2025 (SCI-Expanded)

4. Incorporation of chromium nanostructures into PVC interlayer to improve electrical features of Au/n-Si schottky diodes

Yükseltürk E., ERBİLEN TANRIKULU E.

Physica Scripta , cilt.100, sa.1, 2025 (SCI-Expanded)

5. A high sensitivity temperature coefficient of the Au/n-Si with (CdTe-PVA) structure based on capacitance/conductance-voltage (C/G-V) measurements in a wide range of temperature

Erbilen Tanrıkulu E., Güçlü Ç. Ş., Altındal Ş., Durmuş H.

MEASUREMENT , cilt.238, 2024 (SCI-Expanded)

6. Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe:PVA via the admittance method

Guclu C. S., ALTINDAL Ş., ERBİLEN TANRIKULU E.

PHYSICA B-CONDENSED MATTER , cilt.677, 2024 (SCI-Expanded)

7. Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer

ERBİLEN TANRIKULU E., Berkün Ö., ULUSOY M., Avar B., Durmuş H., ALTINDAL Ş.

MATERIALS TODAY COMMUNICATIONS , cilt.38, 2024 (SCI-Expanded)

8. Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

Güçlü Ç., Tanrıkulu E., ULUSOY M., Kalandargh Y. A., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.35, sa.5, 2024 (SCI-Expanded)

9. A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current-voltage (I-V) and impedance-voltage (Z-V) measurements

Güçlü Ç., Tanrıkulu E., Dere A., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.34, sa.28, 2023 (SCI-Expanded)

10. Dielectric properties of MS diodes with Ag:ZnO doped PVP interfacial layer depending on voltage and frequency

Altındal Yerişkin S., ERBİLEN TANRIKULU E., ULUSOY M.

Materials Chemistry and Physics , cilt.303, 2023 (SCI-Expanded)

11. Variation of the Surface States and Series Resistance Depending on Voltage, and Their Effects on the Electrical Features of a Schottky Structure with CdZnO Interface

ERBİLEN TANRIKULU E., Taşçıoğlu I.

Journal of Electronic Materials , cilt.52, sa.4, ss.2432-2440, 2023 (SCI-Expanded)

12. Investigation of photon-induced effects on some diode parameters and negative capacitance of the Schottky structure with Zn-doped organic polymer (PVA) interface

ERBİLEN TANRIKULU E.

Physica Scripta , cilt.98, sa.1, 2023 (SCI-Expanded)

13. Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayers

ERBİLEN TANRIKULU E.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.1, 2023 (SCI-Expanded)

14. On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance-Voltage Plots at the Accumulation Zone for High Frequencies

ERBİLEN TANRIKULU E., Akin B.

JOURNAL OF ELECTRONIC MATERIALS , cilt.51, sa.8, ss.4437-4445, 2022 (SCI-Expanded)

15. On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C(29)H(32)O17)/p-Si (MPS) structures in wide range of frequency and voltage

ERBİLEN TANRIKULU E., Yeriskin S.

PHYSICA B-CONDENSED MATTER , cilt.623, 2021 (SCI-Expanded)

16. The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors

Demirezen S., Tanrikulu E., Altindal Ş.

INDIAN JOURNAL OF PHYSICS , cilt.93, sa.6, ss.739-747, 2019 (SCI-Expanded)

17. Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method

ERBİLEN TANRIKULU E.

Journal of the Institute of Science and Technology , cilt.9, ss.1359-1366, 2019 (Hakemli Dergi)

18. Preparation of (CuS–PVA) interlayer and the investigation their structural, morphological and optical properties and frequency dependent electrical characteristics of Au/(CuS–PVA)/n-Si (MPS) structures

ERBİLEN TANRIKULU E., ALTINDAL Ş., Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics , cilt.29, sa.14, ss.11801-11811, 2018 (SCI-Expanded)

19. Electrical characterization of MIS diode prepared by magnetron sputtering

Tanrikulu H., TATAROĞLU A., Tanrikulu E., Ulusan A. B.

INDIAN JOURNAL OF PURE & APPLIED PHYSICS , cilt.56, sa.2, ss.142-148, 2018 (SCI-Expanded)

20. On the anomalous peak and negative capacitance in the capacitance-voltage (C-V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure

Tanrikulu E., Demirezen S., Altindal Ş., Uslu I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.29, sa.4, ss.2890-2898, 2018 (SCI-Expanded)

21. Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature

Tanrikulu E., Demirezen S., Altindal A., Uslu I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.28, sa.12, ss.8844-8856, 2017 (SCI-Expanded)

22. Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes

Tanrikulu E., Yildiz D. E., Gunen A., Altindal Ş.

PHYSICA SCRIPTA , cilt.90, sa.9, 2015 (SCI-Expanded)

23. Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

Alialy S., Altindal Ş., Tanrikulu E., Yildiz D. E.

JOURNAL OF APPLIED PHYSICS , cilt.116, sa.8, 2014 (SCI-Expanded)

24. Effect of vanadium substitution on the microstructural and superconducting properties of Tl2Ba2Ca2-xVxCu3Oy superconductors

Erbilen E., Cavdar Ş., KORALAY H., Gunen A.

PHYSICA B-CONDENSED MATTER , cilt.413, ss.36-39, 2013 (SCI-Expanded, Scopus)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 10

1. The effect of series resistance (Rs) on the C-V and G/w-V characteristics

ERBİLEN TANRIKULU E.

TÜRK FİZİK DERNEĞİ 37. ULUSLARARASI FİZİK KONGRESİ, 01 Eylül 2021, (Özet Bildiri)

2. Investigation on the negative capacitance of the Au/ZnO/n-GaAs structures at room temperature for 1 MHz

ERBİLEN TANRIKULU E., Akın B.

2nd International Conference on Light and Light-based Technologies (ICLLT), 26 Mayıs 2021, (Özet Bildiri)

3. Frequency Dependent Dielectric Properties, Electric Modulus and ac Electrical Conductivity of Al/C29H32O17/p type Si (MPS) Structure

ERBİLEN TANRIKULU E., YÜKSELTÜRK E., ALTINDAL Ş.

5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2018), 4 - 06 Ekim 2018, (Özet Bildiri)

4. On the voltage dependent profiles of surface states and their relaxation times in Al/C29H32O17/p-Si (MPS) structure by using conductance method

YÜKSELTÜRK E., ERBİLEN TANRIKULU E., ALTINDAL Ş.

5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2018), 4 - 06 Ekim 2018, (Özet Bildiri)

5. ANOMALOUS PEAK AND NEGATIVE CAPACITANCE BEHAVIOR IN THE FORWARD BIAS C-V PLOTS OF THE Al/(7 Zn-DOPED PVA)/p-Si (MPS) STRUCTURE

ERBİLEN TANRIKULU E., ALTINDAL Ş.

International Congress on Semiconductor Materials and Devices, 17 - 19 Ağustos 2017, (Özet Bildiri)

6. Frequency and voltage dependence profiles and some main electrical parameters of the Al/(7 Zn-doped PVa)/p-Si (MPS) structures

ERBİLEN TANRIKULU E., ALTINDAL Ş.

International Congress on semiconductor materials and devices, 17 - 19 Ağustos 2017, (Özet Bildiri)

7. Anonalous peak and negative capacitance behaviour in the forward bias c-V plots of the A(7 Zn-doped PVA)/p-Si (MPS) Structure

ERBİLEN TANRIKULU E., ALTINDAL Ş.

International Congress on semiconductor materials and devices, 17 - 19 Ağustos 2017, (Özet Bildiri)

8. The Vanadıum Substitution Effects on Tl 2223 Superconducting Properties

ERBİLEN TANRIKULU E., ÇAVDAR Ş., KORALAY H., GÜNEN A.

3rd International Conference On Superconductivity And Magnetism – ICSM2012, İstanbul, Türkiye, 29 Nisan - 04 Mayıs 2012, (Özet Bildiri)

9. TBCCO 2223 Yapısında Kalsiyum Vanadyum Kısmi Yerdeğiştirmesinin Süperiletkenlik Özellikleri Üzerindeki Etkisinin İncelenmesi

ERBİLEN TANRIKULU E., GÜNEN A., ÇAVDAR Ş., KORALAY H.

Türk Fizik Derneği 28. Uluslar arası Fizik Kongresi, Bodrum, Türkiye, 6 - 09 Eylül 2011, (Özet Bildiri)

10. Synthesis Of Cds Nanoparticle

ERBİLEN TANRIKULU E., GÜNEN A., Dişbudak H., ÇAVDAR Ş., KORALAY H.

Türk Fizik Derneği 25. Uluslar Arası Fizik Kongresi, Bodrum, Türkiye, 25 - 29 Eylül 2008, (Özet Bildiri)

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