Yayınlar & Eserler

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities

Bengi S., ÇETİNKAYA H. G., ALTINDAL Ş., Zeyrek S.
Journal of Electronic Materials , cilt.53, sa.9, ss.5606-5616, 2024 (SCI-Expanded) identifier

Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer

Bengi S., ÇETİNKAYA H. G., ALTINDAL Ş., DURMUŞ P.
Ionics , cilt.30, sa.6, ss.3651-3659, 2024 (SCI-Expanded) identifier

The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures

ÇETİNKAYA H. G., Bengi S., DURMUŞ P., Demirezen S., ALTINDAL Ş.
Silicon , cilt.16, sa.5, ss.2315-2322, 2024 (SCI-Expanded) identifier identifier

The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures

ÇETİNKAYA H. G., Bengi S., SEVGİLİ Ö., ALTINDAL Ş.
Physica Scripta , cilt.99, sa.2, 2024 (SCI-Expanded) identifier identifier

Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method

ŞAFAK ASAR Y., Feizollahi Vahid A., Basman N., ÇETİNKAYA H. G., ALTINDAL Ş.
Applied Physics A: Materials Science and Processing , cilt.129, sa.5, 2023 (SCI-Expanded) identifier identifier

The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures

Demirezen S., Arslan Alsaç A., ÇETİNKAYA H. G., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics , cilt.34, sa.14, 2023 (SCI-Expanded) identifier identifier

On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)

ÇETİNKAYA H. G., Feizollahi Vahid A., Basman N., Demirezen S., ŞAFAK ASAR Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics , cilt.34, sa.9, 2023 (SCI-Expanded) identifier identifier

Vertical CdTe:PVP/<italic>p</italic>-Si - Based Temperature Sensor by Using Aluminum Anode Schottky Contact

ÇETİNKAYA H. G., Cicek O., ALTINDAL Ş., Badali Y., Demirezen S.
IEEE Sensors Journal , cilt.22, sa.23, ss.22391-22397, 2022 (SCI-Expanded) identifier identifier

Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range

Demirezen S., Cetinkaya H. G., ALTINDAL Ş.
SILICON , cilt.14, sa.14, ss.8517-8527, 2022 (SCI-Expanded) identifier identifier

Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes

Cetinkaya H. G., Demirezen S., Yeriskin S.
PHYSICA B-CONDENSED MATTER , cilt.621, 2021 (SCI-Expanded) identifier identifier

Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures

Demirezen S., Cetinkaya H. G., Kara M., Yakuphanoglu F., ALTINDAL Ş.
SENSORS AND ACTUATORS A-PHYSICAL , cilt.317, 2021 (SCI-Expanded) identifier identifier

The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics

ÇETİNKAYA H. G., SEVGİLİ Ö., ALTINDAL Ş.
PHYSICA B-CONDENSED MATTER , cilt.560, ss.91-96, 2019 (SCI-Expanded) identifier identifier

Frequency and Voltage Dependent Profile of Dielectric Parameters and Electric Modulus for Al/(HgS-PVA)/p-Si Capacitor via Impedance Spectroscopy Method

Cetinkaya H. G.
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , cilt.13, sa.3, ss.421-427, 2018 (SCI-Expanded) identifier

Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures

Cetinkaya H. G., Yildirim M., Durmus P., Altindal Ş.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.728, ss.896-901, 2017 (SCI-Expanded) identifier identifier

Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity

Cetinkaya H. G., Yildirim M., Durmus P., Altindal Ş.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.721, ss.750-756, 2017 (SCI-Expanded) identifier identifier

Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer

Cetinkaya H. G., Altindal Ş., Orak I., Uslu I.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.28, sa.11, ss.7905-7911, 2017 (SCI-Expanded) identifier identifier

A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer

Kaya A., Cetinkaya H. G., Altindal Ş., Uslu I.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.30, sa.16, 2016 (SCI-Expanded) identifier identifier

On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure

Maril E., Kaya A., Cetinkaya H. G., Kocyigit S., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.39, ss.332-338, 2015 (SCI-Expanded) identifier identifier

Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage

Cetinkaya H. G., Kaya A., Altindal Ş., Kocyigit S.
CANADIAN JOURNAL OF PHYSICS , cilt.93, sa.10, ss.1213-1220, 2015 (SCI-Expanded) identifier identifier

Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis

Cetinkaya H. G., Alialy S., Altindal Ş., Kaya A., Uslu I.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.26, sa.5, ss.3186-3195, 2015 (SCI-Expanded) identifier identifier

On the negative capacitance behavior in the forward bias of Au/n-4H-SiC (MS) and comparison between MS and Au/TiO2/n-4H-SiC (MIS) type diodes both in dark and under 200 W illumination intensity

Cetinkaya H. G., Yildiz D. E., Altindal Ş.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.29, sa.1, 2015 (SCI-Expanded) identifier identifier

Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures

Cetinkaya H. G., Tecimer H., Uslu H., Altindal Ş.
CURRENT APPLIED PHYSICS , cilt.13, sa.6, ss.1150-1156, 2013 (SCI-Expanded) Sürdürülebilir Kalkınma identifier identifier

Diğer Dergilerde Yayınlanan Makaleler

Aynı Şartlarda Hazırlanmış Al/Bi3Ti4O12/n-Si (MFS) diyotların (60 Adet) Engel Yükseklikleri İle İdealite Faktörlerindeki Dağılım

ÇETİNKAYA H. G.
Fen Bilimleri Dergisi PART C: TASARIM VE TEKNOLOJİ , cilt.5, sa.3, ss.89-96, 2017 (Hakemli Dergi)

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Investigation of frequency and voltage dependent dielectricproperties, electric modulus and electrical conductivity in theAl/(5 Coumarin doped PVA)/p-Si (MPS) capacitors usingimpedance spectroscopy method

DEMİREZEN S., SEÇKİN A. Y., ÇETİNKAYA H. G.
International Materials Science and Nanotechnology for Next Generation (MSNG2018), 4 - 07 Ekim 2018

Acomparative Study on the Au/p-Si diodes with and without different rate (0,1, 0,5, 2) ZnO-doped CuO interfacial layer

ÇETİNKAYA H. G., ALTINDAL Ş., DEMİREZEN S.
International Materials Science and Nanotechnology for Next Generation (MSNG2018), 4 - 07 Ekim 2018

Photocurrent characteristics of Au/ p-Si (MS) type photo-diodewith (2 ZnO-doped CuO)/ Interfacial layer by sol gel method

ALTINDAL Ş., ÇETİNKAYA H. G.
International Materials Science and Nanotechnology for Next Generation (MSNG2018), 4 - 07 Ekim 2018

A Comparative Study on The Electrical Characteristics of Au/p-Si diodes with and without different rate (0.1, 0.5 and 2) ZnO-doped CuO interfacial layer

ÇETİNKAYA H. G., ALTINDAL Ş., DEMİREZEN S.
5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 Ekim 2018

Çeşitli oranlarda ZnO katkılı CuO arayüzey tabakalı Al/p-Si (MS) Diyotlarının Akım-Voltaj (I-V) Karakteristiklerinin Oda Sıcaklığında İncelenmesi

ÇETİNKAYA H. G., SEÇKİN A. Y.
VII. YOĞUN MADDE FİZİĞİİZMİR TOPLANTISI, Türkiye, 13 Nisan 2018

Farklı Oranlarda ZnO Katkılı CuO Arayüzey Tabakalı Al/p-Si (MS) Diyotların Kapasitans-Voltaj (C-V) ve Kondüktans-Voltaj (G/ -V) Karakteristiklerinin İncelenmesi

ÇETİNKAYA H. G., SEÇKİN A. Y.
VII. YOĞUN MADDE FİZİĞİİZMİR TOPLANTISI, Türkiye, 13 Nisan 2018

Dielectric Constant, Electric Modulus and Electrical Conductivity in Identically Prepared Diodes of Al/Bi4Ti3O12/p-Si (MFS) Structure with Barrier and Thickness Inhomogeneity

DURMUŞ P., ÇETİNKAYA H. G., YILDIRIM M., ALTINDAL Ş., DÖKME İ.
4th Internatıonal conference on materials science and nanotechnology for next generation(MSNG2017), 28 - 30 Haziran 2017

Surface States, Series Resistance and Interfacial Bi4Ti3O12 Layer Effects on the Electrical and dielectric Properties of Al/Bi4Ti3O12/p-Si (MFS) Structure

ÇETİNKAYA H. G., YILDIRIM M., DURMUŞ P., ALTINDAL Ş.
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017

Complex Dielectric Constant and Complex Electric Modulus of Al/Bi4Ti3O12/p-Si (MFS)Structures as Function of Voltage at Room Temperature

ÇETİNKAYA H. G., ALTINDAL Ş.
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017

The correlation between barrier heights (BHs) and ideality factors (n) in identically prepared Al/Bi3Ti4O12/n-Si (MFS) structures

ÇETİNKAYA H. G.
NANOSCIENCE NANOTECHNOLOGY FOR NEXT GENERATION (NaNoNG 2016), 20 - 22 Ekim 2016

Electrical and Dielectric Properties in identically fabricated Al/Bi3Ti4O12/n-Si (MFS) structures by Capacitance/Conductance-Voltage Measurements

ÇETİNKAYA H. G., ALTINDAL Ş.
2nd International Advanced and Functional Materials Technologies (AFMAT 2016), 20 - 22 Ekim 2016

Electrical and Dielectric Properties in identically fabricated Al Bi3Ti4O 2ln Si MFS structures by Capaci tance Conductance Vol tage Measurements

ÇETİNKAYA H. G., ALTINDAL Ş.
2nd international Advanced a6d Functıoniı Materials Technologies (AFMAT) 2016, 20 - 22 Ekim 2016

Electrical Characterization and Sources of Energy Losses in Solar Cells

ALTINDAL Ş., ÇETİNKAYA H. G.
lst International Underground Resources and Energy Conference, 6 - 08 Ekim 2016

Electrical properties of Au/3 Graphene (GP)-doped PVA/n-Si structures as function of frequency

ÇETİNKAYA H. G., KAYA A., ALTINDAL Ş., ORAK İ.
International Semiconductor Science and Technology Conference 2015 (ISSTC2015), 11 - 13 Mayıs 2015

Frequency and voltage-dependent electrical and dielectric properties of Au/Graphene Oxide Calcineed/n-Si structures at room temperature

ALTINDAL Ş., KAYA A., ÇETİNKAYA H. G., USLU İ.
International Semiconductor Science and Technology Conference 2015 (ISSTC2015), 11 - 13 Mayıs 2015

Some Electrical Properties of Au/n-Si Structures with and without Graphene doped PVA Interfacial Layer

ÇETİNKAYA H. G., KAYA A., ALTINDAL Ş.
International Semiconductor Science and Technology Conference 2015 (ISSTC2015), 11 - 13 Mayıs 2015

Frequency and voltage Dependent electrical and Dielectrical Properties of AU Graphene Oxide Calcined n Si Structures at Room Temperature

ALTINDAL Ş., KAYA A., ÇETİNKAYA H. G., USLU İ.
International Semiconductor Science Technology Conference, İzmir, Türkiye, 10 - 13 Mayıs 2015, ss.72

Temperature and Voltage Dependence of Electrical and Dielectric Properties of Au/1 graphene doped- Ca1.9Pr0.1Co4Ox)/n-Si Structure

ÇETİNKAYA H. G., KAYA A., ALTINDAL Ş., KOÇYİĞİT S.
Nanoscience Nanotechnology for Next Generation (NanoNGe’14), 20 - 22 Ağustos 2014

On the Origin of Capacitance and Anomalous Peak in the Forward Bias Capacitance-Voltage plots in Au/1 graphene doped-Ca1.9Pr0.1Co4Ox)/n-Si Structure.

ÇETİNKAYA H. G., ALTINDAL Ş., KAYA A., KOÇYİĞİT S.
Nanoscience Nanotechnology for Next Generation, 20 - 22 Ağustos 2014

Investigation of Negative Dielectric Constant at Forward Biases Using Impedance Spectroscopy Analysis in Au/1 graphene doped- Ca1.9Pr0.1Co4Ox)/n-Si Structure

ÇETİNKAYA H. G., ALİALY S., ALTINDAL Ş., USLU İ., KAYA A.
Nanoscience Nanotechnology for Next Generation, 20 - 22 Ağustos 2014

On the Temperature and Voltage Dependence Forward Bias Current-Voltage (I-V) Characteristics in Au/Ca3Co4Ga0.001Ox(2 graphene cobalt)/n-Si Structure

MARIL E., KAYA A., ÇETİNKAYA H. G., KOÇYİĞİT S., ALTINDAL Ş.
Nanoscience Nanotechnology for Next Generation (NanoNGe’14), 20 - 22 Ağustos 2014

The Effect of Series Resistance on Current-Voltage (I-V) Characteristics of Au/PVA/n-Si Schottky Barrier Diodes (SBDs) in Dark and Under Illumination Conditions

ÇETİNKAYA H. G., TECİMER H., USLU H.
Mini-Workshop on Surface Science for Inauguration of the Türkish Surface Science Society (TuSSS), Türkiye, 23 Mayıs 2011

Metrikler

Yayın

47

Atıf (WoS)

481

H-İndeks (WoS)

14

Atıf (Scopus)

474

H-İndeks (Scopus)

13

Proje

7

Tez Danışmanlığı

2

Açık Erişim

1
BM Sürdürülebilir Kalkınma Amaçları