SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler
Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C
JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
, cilt.34, sa.25, ss.1786, 2023 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
Evaluation of dielectric properties of Au/TZO/n-Si structure depending on frequency and voltage
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.33, sa.13, ss.10516-10523, 2022 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
Determination of surface morphology and electrical properties of MoO3 layer deposited on GaAs substrate with RF magnetron sputtering
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.9, ss.12330-12339, 2021 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
The temperature dependent negative dielectric constant phenomena of Au/n-GaAs structure with CZO interfacial layer
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.5, ss.5928-5935, 2021 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
A comprehensive study on Cu-doped ZnO (CZO) interlayered MOS structure
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.16, ss.13646-13656, 2020 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
The effects of annealing temperature on RF-coated GZO thin films on n-Si and PET substrates N-Si ve PET alttaşlar üzerine RF-kaplanan GZO ince filmlere tavlama sicakliǧinin etkileri
Journal of the Faculty of Engineering and Architecture of Gazi University
, cilt.34, sa.4, ss.1757-1763, 2019 (SCI-Expanded)
![Creative Commons License](/Content/images/creative-commons/licenses/small/by-nc-nd.png)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
Study on growth and characterizations of GaxIn1-xP/GaAs solar cell structure
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.24, sa.9, ss.3269-3274, 2013 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaxIn1-xP/GaAs structure
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.24, sa.4, ss.1375-1381, 2013 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
Electrical characterization of Au/ZnO/TiO2/n-Si and (Ni/Au)/ZnO/TiO2/n-Si Schottky diodes by using current-voltage measurements
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.14, sa.11-12, ss.959-963, 2012 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
Current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes
Optoelectronics and Advanced Materials, Rapid Communications
, cilt.6, ss.327-330, 2012 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics
Optoelectronics and Advanced Materials, Rapid Communications
, cilt.5, sa.4, ss.434-437, 2011 (SCI-Expanded)
![identifier](/Content/images/integrations/small/integrationtype_2.png)
![identifier](/Content/images/integrations/small/integrationtype_1.png)
Diğer Dergilerde Yayınlanan Makaleler
The Effect of Concentrated System on The Energy Conversion Efficiency of GaAsP/GaAs/Ge Triple Junction Solar Cell
Balkan Physics Letters
, cilt.24, sa.24, ss.220-224, 2016 (Hakemli Dergi)
Temperature Dependence Electrical Characteristics of n-GaAs Structure Grown by MBE
Azerbaijan Journal of Physics, Fizika
, cilt.16, sa.2, ss.335-338, 2010 (Hakemli Dergi)
Characterization of MBE Grown InGaAs / GaAs Quantum Well Solar Cells (QWSCs)
Azerbaijan Journal of Physics, Fizika
, cilt.16, sa.2, ss.460-462, 2010 (Hakemli Dergi)
Series resistance effect on I-V characteristics of Au / n-InP Schottky barrier diodes (SBDs) in the temperature range of 80-400 K
Azerbaijan Journal of Physics, Fizika
, cilt.15, sa.2, ss.195-198, 2009 (Hakemli Dergi)
Epitaxial Growth and Characterization of GaAs1-XPx / GaAs Structure
Balkan Physics Letters
, cilt.15, sa.1, ss.151049, 2009 (Hakemli Dergi)
Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar
Perovskite Solar Cell Designs by Based on Machine Learning
TURKISH PHYSICAL SOCIETY 39 TH INTERNATIONAL PHYSICS CONGRESS, Muğla, Türkiye, 31 Ağustos - 04 Eylül 2023, ss.174
Production of V2O5 Doped Soda-Silicate Glasses with Classical Melt-Quenching Technique and Physical Characterization of These Oxide Glasses
Turkish Physical Society–36th International Physics Congress (TPS-36), Muğla/Bodrum, Türkiye, 1 - 05 Eylül 2020
Production of V2O5 Doped Soda-Silicate Glasses with Classical Melt-Quenching Technique and Optical Characterization of These Oxide Glasses
Türk Fizik Derneği 35. Uluslar arası Fizik Kongresi-TFD35, 4 - 09 Eylül 2019
A Comparison of Characteristics of Heterojunction Pin Solar Cells Based on Dilute Bismide and Dilute Nitride Alloys
INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND MATERIALS SCIENCE, 11 - 15 Ekim 2017
Analysis of the Temperature Dependence of the Capacitance–Voltage Characteristic of Au/SrTiO3)/p-Si Structures
INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND MATERIALS SCIENCE, 11 - 15 Ekim 2017
Study on the Design and Optic Characterization of n-i-p-i GaInNAs Solar Cell
INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND MATERIALS SCIENCE, 11 - 15 Ekim 2017
DESIGN OF HIGH EFFICIENCY GAINP/GAAS SOLAR CELL USING DRIFT–DIFFUSION THEORY
THE PRODUCTION OF MULTI JUNCTION III-V PHOTOVOLTAIC DEVICES, 5 - 10 Eylül 2017
Characterization of Heterojunction pinSolar Cells Based on Dilute Bismide and Dilute Nitride
8thInternational Workshop on Bismuth-Containing Semiconductors, 23 - 26 Temmuz 2017
CHARACTERİZATİON OF HETERO STRUCTURE SİNGLE PİN JUNCTİON SOLAR CELLS BASED ON III N V AND III Bİ V ALLOYS
SOLARTR2016, 6 - 08 Kasım 2016
Deposition of Boron Doped Graphene for CdTe Solar Cell Applications
2nd International Congress on the World of Technology and Advanced Materials, Kırşehir, Türkiye, 28 Eylül - 02 Ekim 2016
The Influence of Concentrated System on the Efficiency of GaInP GaAs Ge Concentrated Solar Cell
2nd International Congress on the World of Technology and Advanced Materials, Kırşehir, Türkiye, 28 Eylül - 02 Ekim 2016
The Efficiency Analysis of GaInP GaAs Ge Concentrated Solar Cell
Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016
Yoğunlaştırılmış Üç Eklemli Güneş Hücre Yapısının Elektiriksel Analizi
21. Yoğun Madde Fiziği Toplantısı, Türkiye, 25 Aralık 2015, ss.98
Performance Evaluation of CdTe CdS Solar Cell Structure With Concentrated Photovoltaic System
9th International Physics Conference of the Balkan Physical Union, 24 - 27 Ağustos 2015
![Sürdürülebilir Kalkınma](/Content/mainpage/sustainability/sdg_logo.png)
The lattice dynamical and electronic properties of PrYbO3 compound from first principles calculations
11th Nanoscience and Nanotechnology Conference, 22 - 25 Haziran 2015
AlGaAs tünel diyot entagrasyonlu GaInP GaAs güneş hücre yapısının performansı üzerine çalışma
20. Yoğun Madde Fiziği Kongresi, Ankara, Türkiye, 26 Aralık 2014, ss.37
CdTe Based Concentrated Solar Cell Structure
Turkish Physical Society 31nd International Physics Congress, Muğla, Türkiye, 21 - 24 Temmuz 2014, ss.318