Yayınlar

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

First principles calculations of electronic and optical properties of InSe nanosheets doped with noble metal atoms

NARİN P., All Abbas J., Kutlu-Narin E., LİŞESİVDİN S. B., Ozbay E.

Computational Materials Science, cilt.222, 2023 (SCI-Expanded)

Morphological and optical characterizations of different ZnO nanostructures grown by mist-CVD

NARİN P., Kutlu-Narin E., Kayral S., Tulek R., Gokden S., Teke A., et al.

Journal of Luminescence, cilt.251, 2022 (SCI-Expanded)

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

Narin P., Kutlu-Narin E., Atmaca G., Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., ÖZBAY E.

SURFACE AND INTERFACE ANALYSIS, cilt.54, sa.5, ss.576-583, 2022 (SCI-Expanded)

gpaw-tools – higher-level user interaction scripts for GPAW calculations and interatomic potential based structure optimization

Lişesivdin S. B., Sarikavak-Lisesivdin B.

Computational Materials Science, cilt.204, 2022 (SCI-Expanded)

Investigation of Structural and Optical Properties of ZnO Thin Films Grown on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by Corona Discharge Plasma

Kutlu-Narin E., Narin P., LİŞESİVDİN S. B., Sarikavak-Lisesivdin B.

ADVANCES IN CONDENSED MATTER PHYSICS, cilt.2021, 2021 (SCI-Expanded)

Growth dynamics of mist-CVD grown ZnO nanoplatelets

Narin P., Kutlu-Narin E., LİŞESİVDİN S. B.

PHYSICA B-CONDENSED MATTER, cilt.614, 2021 (SCI-Expanded)

Structural parameters and electronic properties of 2D carbon allotrope: Graphene with a kagome lattice structure

Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., Ozbay E., Jelezko F.

CHEMICAL PHYSICS LETTERS, cilt.760, 2020 (SCI-Expanded)

Ab initio study of electronic properties of armchair graphene nanoribbons passivated with heavy metal elements

NARİN P., Abbas J. M. A., Atmaca G., Kutlu E., LİŞESİVDİN S. B., Ozbay E.

SOLID STATE COMMUNICATIONS, cilt.296, ss.8-11, 2019 (SCI-Expanded)

Scattering analysis of ultrathin barrier (< 7nm) GaN-based heterostructures

NARİN P., Arslan E., Ozturk M., Ozturk M., LİŞESİVDİN S. B., ÖZBAY E.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.125, sa.4, 2019 (SCI-Expanded)

Electronic properties of zigzag ZnO nanoribbons with hydrogen and magnesium passivations

Abbas J. M. A., NARİN P., Kutlu E., LİŞESİVDİN S. B., Ozbay E.

PHYSICA B-CONDENSED MATTER, cilt.556, ss.12-16, 2019 (SCI-Expanded)

Electronic properties of graphene nanoribbons doped with zinc, cadmium, mercury atoms

Omeroglu O., Kutlu E., NARİN P., LİŞESİVDİN S. B., Ozbay E.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.104, ss.124-129, 2018 (SCI-Expanded)

Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Atmaca G., NARİN P., Kutlu E., Malin T. V., Mansurov V. G., Zhuravlev K. S., et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.65, sa.3, ss.950-956, 2018 (SCI-Expanded)

Structural and optical properties of hexagonal ZnO nanostructures grown by ultrasonic sprayCVD

NARİN P., Kutlu E., Atmaca G., ATILGAN A., Yildiz A., LİŞESİVDİN S. B.

OPTIK, cilt.168, ss.86-91, 2018 (SCI-Expanded)

Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms

Kutlu E., NARİN P., LİŞESİVDİN S. B., Ozbay E.

PHILOSOPHICAL MAGAZINE, cilt.98, sa.2, ss.155-164, 2018 (SCI-Expanded)

Electronic structure of beta-Si3N4 crystals with substitutional icosagen group impurities

Kutlu E., NARİN P., Atmaca G., Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., Ozbay E.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.19, ss.278-282, 2017 (SCI-Expanded)

The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures

Al Abbas J., Narin P., Atmaca G., Kutlu E., Sarikavak-Lisesivdin B., LİŞESİVDİN S. B.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.11, ss.328-331, 2017 (SCI-Expanded)

A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of beta-Si3N4 structure

NARİN P., Kutlu E., Atmaca G., LİŞESİVDİN S. B., Ozbay E.

OPTIK, cilt.147, ss.115-122, 2017 (SCI-Expanded)

Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer

Atmaca G., Ardali S., Tiras E., Malin T., Mansurov V. G., Zhuravlev K. S., et al.

SOLID-STATE ELECTRONICS, cilt.118, ss.12-17, 2016 (SCI-Expanded)

Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation

Atmaca G., Ardali S., NARİN P., Kutlu E., LİŞESİVDİN S. B., Malin T., et al.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.659, ss.90-94, 2016 (SCI-Expanded)

Evaluation of morphological and chemical differences of gunshot residues in different ammunitions using SEM/EDS technique

Kara I., Sarikavak Y., LİŞESİVDİN S. B., KASAP M.

ENVIRONMENTAL FORENSICS, cilt.17, sa.1, ss.68-79, 2016 (SCI-Expanded)

The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Ardali S., Atmaca G., LİŞESİVDİN S. B., Malin T., Mansurov V., Zhuravlev K., et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, cilt.252, sa.9, ss.1960-1965, 2015 (SCI-Expanded)

The Relationship Between the Surface Morphology and Chemical Composition of Gunshot Residue Particles

Kara I., LİŞESİVDİN S. B., Kasap M., Er E., Uzek U.

JOURNAL OF FORENSIC SCIENCES, cilt.60, sa.4, ss.1030-1033, 2015 (SCI-Expanded)

Energy Relaxation of Electrons in InGaN Quantum Wells

Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., Balkan N., Atmaca G., NARİN P., Cakmak H., et al.

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, sa.4, ss.1565-1569, 2015 (SCI-Expanded)

Numerical investigation of the 2DEG properties of AlGaN/AlN/GaN HEMT structures with InGaN/GaN MQW back-barrier structure

Atmaca G., Tasli P., Karakoc G., Yazbahar E., LİŞESİVDİN S. B.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.65, ss.110-113, 2015 (SCI-Expanded)

Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

Atmaca G., Narin P., Lisesivdin S. B., Kasap M., Sarikavak-Lisesivdin B.

PHILOSOPHICAL MAGAZINE, cilt.95, sa.1, ss.79-89, 2015 (SCI-Expanded)

Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures

DÖNMEZ Ö., SARCAN F., LİŞESİVDİN S. B., Vaughan M. P., EROL A., Gunes M., et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.29, sa.12, 2014 (SCI-Expanded)

Optical gain in 1.3-mu m electrically driven dilute nitride VCSOAs

LİŞESİVDİN S. B., Khan N. A., Mazzucato S., Balkan N., Adams M. J., Korpijarvi V., et al.

NANOSCALE RESEARCH LETTERS, cilt.9, 2014 (SCI-Expanded)

A numerical study on subband structure of InxAl1-xN/GaN-based HEMT structures with low-indium (x < 0.10) barrier layer

Elibol K., Atmaca G., Tasli P., LİŞESİVDİN S. B.

SOLID STATE COMMUNICATIONS, cilt.162, ss.8-12, 2013 (SCI-Expanded)

First-principles calculations of Pd-terminated symmetrical armchair graphene nanoribbons

Kuloglu A. F., Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

COMPUTATIONAL MATERIALS SCIENCE, cilt.68, ss.18-22, 2013 (SCI-Expanded)

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

Tiras E., Celik O., Mutlu S., Ardali S., LİŞESİVDİN S. B., ÖZBAY E.

SUPERLATTICES AND MICROSTRUCTURES, cilt.51, sa.6, ss.733-744, 2012 (SCI-Expanded)

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

Celik O., Tiras E., Ardali S., LİŞESİVDİN S. B., ÖZBAY E.

CENTRAL EUROPEAN JOURNAL OF PHYSICS, cilt.10, sa.2, ss.485-491, 2012 (SCI-Expanded)

Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD

Kelekci O., Tasli P. T., Yu H., KASAP M., ÖZÇELİK S., ÖZBAY E.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.209, sa.3, ss.434-438, 2012 (SCI-Expanded)

Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers

Kelekci O., LİŞESİVDİN S. B., Ozcelik S., Ozbay E.

Physica B: Condensed Matter, cilt.406, sa.8, ss.1513-1518, 2011 (SCI-Expanded)

Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer

Yu H., LİŞESİVDİN S. B., Bolukbas B., Kelekci O., Ozturk M. K., ÖZÇELİK S., et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.207, sa.11, ss.2593-2596, 2010 (SCI-Expanded)

Electron-Electron Interactions in Sb-Doped SnO2 Thin Films

Serin T., Yildiz A., SERİN N., Yildirim N., Ozyurt F., KASAP M.

JOURNAL OF ELECTRONIC MATERIALS, cilt.39, sa.8, ss.1152-1158, 2010 (SCI-Expanded)

The substrate temperature dependent electrical properties of titanium dioxide thin films

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.21, sa.7, ss.692-697, 2010 (SCI-Expanded)

Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers

Yildiz A., LİŞESİVDİN S. B., Tasli P., Ozbay E., Kasap M.

CURRENT APPLIED PHYSICS, cilt.10, sa.3, ss.838-841, 2010 (SCI-Expanded)

Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel

Gokden S., Tulek R., Teke A., Leach J. H., Fan Q., Xie J., et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.25, sa.4, 2010 (SCI-Expanded)

Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures

Bengi A., LİŞESİVDİN S. B., Kasap M., Mammadov T., Ozcelik S., Ozbay E.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.13, sa.2, ss.105-108, 2010 (SCI-Expanded)

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

Yildiz A., LİŞESİVDİN S. B., Kasap M., Ozcelik S., Ozbay E., Balkan N.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.98, sa.3, ss.557-563, 2010 (SCI-Expanded)

Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Tasli P., LİŞESİVDİN S. B., Yildiz A., Kasap M., Arslan E., Ozcelik S., et al.

CRYSTAL RESEARCH AND TECHNOLOGY, cilt.45, sa.2, ss.133-139, 2010 (SCI-Expanded)

Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN

Tasli P., Yildiz A., Kasap M., Ozbay E., LİŞESİVDİN S. B., Ozcelik S.

PHILOSOPHICAL MAGAZINE, cilt.90, sa.26, ss.3591-3599, 2010 (SCI-Expanded)

Crossover from Nearest-Neighbor Hopping Conduction to Efros-Shklovskii Variable-Range Hopping Conduction in Hydrogenated Amorphous Silicon Films

Yildiz A., SERİN N., Serin T., KASAP M.

JAPANESE JOURNAL OF APPLIED PHYSICS, cilt.48, sa.11, 2009 (SCI-Expanded)

Electrical conduction properties of Si delta-doped GaAs grown by MBE

Yildiz A., LİŞESİVDİN S. B., Altuntas H., Kasap M., Ozcelik S.

PHYSICA B-CONDENSED MATTER, cilt.404, sa.21, ss.4202-4206, 2009 (SCI-Expanded)

Effect of various pseudomorphic AlN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18Al0.82N/GaN based heterostructures

LİŞESİVDİN S. B., Ozbay E.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.9, ss.904-909, 2009 (SCI-Expanded)

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

LİŞESİVDİN S. B., Altuntas H., Yildiz A., Kasap M., Ozbay E., Ozcelik S.

SUPERLATTICES AND MICROSTRUCTURES, cilt.45, sa.6, ss.604-611, 2009 (SCI-Expanded)

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Teke A., Goekden S., Tuelek R., Leach J. H., Fan Q., Xie J., et al.

NEW JOURNAL OF PHYSICS, cilt.11, 2009 (SCI-Expanded)

Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.

PHYSICA B-CONDENSED MATTER, cilt.404, ss.1423-1426, 2009 (SCI-Expanded)

Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)

Atmaca G., Elibol K., LİŞESİVDİN S. B., Kasap M., Ozbay E.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.11, sa.5, ss.578-582, 2009 (SCI-Expanded)

A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs

LİŞESİVDİN S. B., Balkan N., Ozbay E.

MICROELECTRONICS JOURNAL, cilt.40, sa.3, ss.413-417, 2009 (SCI-Expanded)

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

TÜLEK R., ILGAZ A., GÖKDEN S., TEKE A., Ozturk M. K., KASAP M., et al.

JOURNAL OF APPLIED PHYSICS, cilt.105, sa.1, 2009 (SCI-Expanded)

Electrical properties of TiO(2) thin films

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.

JOURNAL OF NON-CRYSTALLINE SOLIDS, cilt.354, ss.4944-4947, 2008 (SCI-Expanded)

Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements

LİŞESİVDİN S. B., Demirezen S., Caliskan M. D., Yildiz A., Kasap M., Ozcelik S., et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.23, sa.9, 2008 (SCI-Expanded)

Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements

LİŞESİVDİN S. B., Arslan E., Kasap M., Ozcelik S., Ozbay E.

JOURNAL OF PHYSICS-CONDENSED MATTER, cilt.20, sa.4, 2008 (SCI-Expanded)

The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures

LİŞESİVDİN S. B., Yildiz A., ACAR S., Kasap M., Oezcelik S., Oezbay E.

PHYSICA B-CONDENSED MATTER, cilt.399, sa.2, ss.132-137, 2007 (SCI-Expanded)

Electron transport in Ga-rich InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M., Bosi M.

CHINESE PHYSICS LETTERS, cilt.24, sa.10, ss.2930-2933, 2007 (SCI-Expanded)

Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis

LİŞESİVDİN S. B., Yildiz A., ACAR S., Kasap M., Ozcelik S., Ozbay E.

APPLIED PHYSICS LETTERS, cilt.91, sa.10, 2007 (SCI-Expanded)

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

LİŞESİVDİN S. B., ACAR S., Kasap M., Ozcelik S., Gokden S., Ozbay E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.22, sa.5, ss.543-548, 2007 (SCI-Expanded)

High temperature variable-range hopping conductivity in undoped TiO2 thin film

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.1, sa.10, ss.531-533, 2007 (SCI-Expanded)

Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors

LİŞESİVDİN S. B., Yildiz A., Kasap M.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.1, sa.9, ss.467-470, 2007 (SCI-Expanded)

The temperature dependence of electron and magneto transport properties in Te-doped InSb

Kasap M., ACAR S.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.201, sa.14, ss.3113-3120, 2004 (SCI-Expanded)

Temperature-dependent barrier characteristics of inhomogeneous in/p-Si (100) Schottky barrier diodes

Tugluoglu N., Karadeniz S., ACAR S., Kasap M.

CHINESE PHYSICS LETTERS, cilt.21, sa.9, ss.1795-1798, 2004 (SCI-Expanded)

Conductivity, Hall and magnetoresistance effect measurements on SIGaAs and InP

ACAR S., Kasap M.

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, cilt.201, sa.7, ss.1551-1557, 2004 (SCI-Expanded)

The simulation of the two-dimensional Ising model in the presence of an external magnetic field on the Creutz cellular automaton

Kutlu B., Kasap M., Turan S.

INTERNATIONAL JOURNAL OF MODERN PHYSICS C, cilt.11, sa.3, ss.561-572, 2000 (SCI-Expanded)

The concentration of currents on the artificial surface inhomogeneities of semiconducting cathodes in ionization cells

Salamov B., Ozer M., Kasap M., Altindal Ş.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.32, sa.6, ss.682-687, 1999 (SCI-Expanded)

The temperature and pressure dependence of electron transport in plastically relaxed InxGa1-xAs

Kasap M., Lancefield D.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, cilt.199, sa.2, ss.481-493, 1997 (SCI-Expanded)

The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films

Salamov B., Civi M., Altindal Ş., Kasap M., BULUR E.

JOURNAL OF INFORMATION RECORDING, cilt.23, sa.5, ss.437-445, 1997 (SCI-Expanded)

Impurity conduction in InxGa1-xAs

KASAP M., ÖZER M., Çolakoǧlu K.

Turkish Journal of Physics, cilt.20, sa.7, ss.740-746, 1996 (SCI-Expanded)

Diğer Dergilerde Yayınlanan Makaleler

Preparation of Carbon Nanospheres by An Autoclave Type Reactor

Lişesivdin B.

Balkan Physics Letters, cilt.1, ss.401-403, 2008 (Hakemli Dergi)

Analyze of Defects in InGaAs epilayer with High resolution X ray diffraction

Lişesivdin B.

FİZİKA, cilt.1, ss.179-183, 2008 (Hakemli Dergi)

Electrical Characteristics of Au In0 25Ga0 75As GaAs Structures

Lişesivdin B.

FİZİKA, cilt.1, ss.261-263, 2008 (Hakemli Dergi)

The structural and Optical Analysis of the Graded 1 micrometer Thick n GaAs1 xPx GaAs Structures

Lişesivdin B.

FİZİKA, cilt.1, sa.1, ss.18-20, 2008 (Hakemli Dergi)

Hakemli Kongre/Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Eklem Alan Etkili Transistörlerin Elektriksel Karakteristiklerinin İncelenmesi

Atmaca G., Elibol K., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.12

Activation mechanism in InGaN grown by MOVPE

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.671

First-Principles Calculation of Optical Properties of Magnesium Zinc Oxide

Ibrahem R., NARİN P., LİŞESİVDİN S. B., ÖZBAY E.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.14

Surface Passivation Effect in AlGaN AlN GaN Heterostructure

Ardalı Ş., Atmaca G., LİŞESİVDİN S. B., Malin T., Mansurov V., Zhuravlev K., et al.

E-MRS 2015 Spring Meeting, 11 - 15 Mayıs 2015

Ultraince Bariyerli GaN Temelli HEMT lerde Elektron Gazının Elektriksel Özellikleri ve Saçılma Analizleri

Öztürk M., Arslan E., Narin P., LİŞESİVDİN S. B., LİŞESİVDİN B., ÖZBAY E.

18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Türkiye, 23 Eylül 2016, cilt.50

The Weak Localization in a Two Dimensional Electron Gas in AlInN AlN GaN Heterostructures

ATMACA G., IGOR B., MIRONOV O. A., ROGACKI K., LİŞESİVDİN S. B., ÖZBAY E.

18. Ulusal Optik, Elektro-optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016

Sn I Au gibi Bazı Safsızlıkların Siyah Fosfor un Elektronik ve Optik Özelliklerine Etkileri

KUTLU E., NARİN P., ATMACA G., LİŞESİVDİN S. B., ÖZBAY E.

18. Ulusal Optik, Elektro-optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016

Investigation of the effect of the arsenic impurity on the electronic and optical properties of β–Si3N4dielectric material

LİŞESİVDİN S. B., Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN B.

Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.402

A Numerical Study on Effects of InAlN/AlGaN Barrier in InAlN/AlGaN/AlN/GaN-based High Electron Mobility Transistors

Elibol K., Güneş C., Kuloğlu A. F., Boyalı E., LİŞESİVDİN S. B.

Turkish Physical Society 28th International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2011, ss.711

Quantum Materials Science and NV-center-based systems dor future Quantum Computers

LİŞESİVDİN S. B.

2nd International Conference on Informatics and Computer Science, Ankara, Türkiye, 01 Aralık 2022

On the conduction mechanism of TiO2

YILDIZ A., Eker S., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., Mardare D.

8th International Conference on Physics of Advanced Materials, Iasi, Romanya, 4 - 07 Haziran 2008, ss.28

Calculation of Carrier Density and probability densitycalculations of heterostructures

LİŞESİVDİN B.

WITAM 2018, 21 - 23 Eylül 2018

Determination of Two-Dimensional Electron and Hole Gas Carriers in Al0.88In0.12N/GaN-based Heterostructures Grown by Metal Organic Chemical Vapor Deposition

TUNAY TAŞLI P., LİŞESİVDİN S. B., YILDIZ A., KASAP M., ÖZBAY E.

Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.510

Safir ve SiC Uzerine Buyutulmus AlGaN/AlN/GaN HEMT Yapilarindaki Sicak Elektron Dinamiginin Karsilastirilmasi

ILGAZ A., GÖKDEN S., TEKE A., ÖZÇELİK S., LİŞESİVDİN S. B., ÖZBAY E.

16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.73

gpaw-tools: UI/GUI scripts for GPAW software

LİŞESİVDİN B., LİŞESİVDİN S. B.

2022 Workshop on Recent Developments in Electronic Structure (ES22), New York, Amerika Birleşik Devletleri, 31 Mayıs 2022

The Longitudinal Optical Phonon Energy in Passivated AlGaN AlN GaN

Tıraş T., Ardalı Ş., Atmaca G., LİŞESİVDİN S. B., Malin T., Mansurov V., et al.

E-MRS 2015 Spring Meeting, 11 - 15 Mayıs 2015

Growth and Structural Properties of ZnO Materials by Mist CVD Enhanced by Corona Discharge Plasma

NARİN P., Kutlu-Narin E., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.86

Grafen Flake Üretim Yöntemlerinin Geliştirilmesi

Elibol K., Kelekçi Ö., Atmaca G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., et al.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.2

Ab initio study of oxygen and arsenic impurities on non-linear optical properties of β–Si3N4 material

Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

Конференция И Школа Молодых Учёных По Актуальным Проблемам Физики Полупроводниковых Структур, Novosibirsk, Rusya, 15 Eylül 2014, ss.77

DFT Investigation of Electronic and Optical Properties of Silver Doped Germanene

Han T., LİŞESİVDİN B., LİŞESİVDİN S. B.

Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.240

The Effect of in situ Si3N4 Passivation on 2DEG Quantum Well Parameters in AlGaN GaN Heterostructures

LİŞESİVDİN S. B., Atmaca G., Ardalı Ş., TIRAŞ E., Malin T., Mansurov V., et al.

IX. Uluslararası Balkan Fizik Birliği Konferansı, 24 - 27 Ağustos 2015

Structural and Optical Properties of Mg x Zn 1-x O Nanostructures Depending on Growth Temperatures

Kutlu E., NARİN P., YILDIZ A., LİŞESİVDİN S. B.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.31

Evolution of HELLISH devices: Colurful story of HELLISH Devices from IR to VIS light

MUTLU S., TIRAŞ E., EROL A., LİŞESİVDİN S. B.

The Physics of Optoelectronic Materials and Devices, 27 - 28 Mart 2017

Li KAtkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin DFT ile İncelenmesi

KUTLU E., NARİN P., ATMACA G., AL ABBAS J. M., LİŞESİVDİN B., LİŞESİVDİN S. B.

ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016

Germanene: DFT investigation of Electronic and Optical Properties changing with Au and Cu doping

Han T., LİŞESİVDİN B., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.170

Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE

YILDIZ A., ÖZTÜRK M. A., KASAP M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.672

A Numerical Study on Subband Structure of AlxIn1-xN/GaN-based HEMT Structures with Low-Indium (x>0.82) Barrier Layer

TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M., Elibol K., Atmaca G., ÖZBAY E.

Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.509

MgZnO Thin Films by Mist-CVD Grown: Structural and Optical Properties

Kutlu-Narin E., NARİN P., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.100

Sicakliga ve manyetik alana bagli Hall olcumlerinin analizi ile DX-merkezi aktivasyon enerjisi hesabi

LİŞESİVDİN S. B., ALTUNTAŞ H., YILDIZ A., KASAP M., ÖZBAY E., ÖZÇELİK S.

16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.9

Optical and Structural Properties of ZnO Grown by Mist CVD Using Different Precursor Molarity

NARİN P., Kutlu E., LİŞESİVDİN S. B.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.28

A Simple Parallel Conduction Extraction Method for MODFET’s and Undoped GaN-based HEMTs

LİŞESİVDİN S. B., Balkan N., ÖZBAY E.

Workshop on Recent Advances of Low Dimensional Structures and Devices, Nottingham, Birleşik Krallık, 7 - 09 Nisan 2008, ss.90

Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer

Yu H., LİŞESİVDİN S. B., Bölükbaş B., Kelekçi Ö., Öztürk M., Çakmak H.

2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II, Boston, Amerika Birleşik Devletleri, 29 Kasım - 03 Aralık 2009, ss.4

Ultraince Bariyere Sahip AlN GaN ve InAlN GaN HEMT Yapıların Yapısal ve Yüzey Özelliklerinin İncelenmesi

Narin P., Kutlu E., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E.

18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.72

First Principle Study of ZnO Nanoribbon Passivated with H and Mg

Abbas J. M. A., NARİN P., Kutlu E., LİŞESİVDİN S. B., ÖZBAY E.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.37

Numerical Investigation of Two-dimensional Electron Gas in AlGaN/AlN/GaN HEMT with InGaN/GaN Multi-quantum Well Structure

Karakoç G., Atmaca G., Yazbahar E., TUNAY TAŞLI P., LİŞESİVDİN S. B.

Turkish Physical Society 28th International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2011, ss.745

High Voltage Low Leakage Current AlGaN/GaN HEMTs with Multi-layer Buffer and AlGaN Back-Barrier Structure

Lee J. H., Atmaca G., Kim J. G., Son D. H., Ju J. M., LİŞESİVDİN S. B., et al.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.310

Simulation of the interfacial AlN layer on band structures and carrier densities of AlGaN/GaN HEMT structures

Liceşivdin S., KASAP M.

6TH International Conference of the Balkan Physical Union, İstanbul, Türkiye, 22 Ağustos 2006 - 26 Ağustos 2007, cilt.899, ss.622

Multi-Code, Low-Barrier Python Toolkit For MD/DFT Studies

LİŞESİVDİN B., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.104

Investigation of Optical Properties of the Si3N4 structure doped with some Group IIIA Elements

Narin P., Kutlu E., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

Improvement of the Theoretical Band Gaps for AlN, GaN and InN with LDA-1/2 Approach

Ömeroğlu Ö., LİŞESİVDİN S. B., ÖZBAY E.

Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 09 Eylül 2018, ss.495

Electrical characteristics of GaAs AlGaAs Structures in thewide Frequency ranges

Bektaş C., GÜNEŞ M., LİŞESİVDİN B., Henini M., ALTINDAL Ş.

2nd International Congress on The World of Technology and Advanced Materials, Kırşehir, Türkiye, 28 Eylül - 02 Ekim 2016

Investigation of The Electronic Properties of Zinc and Magnesium Adsorption on Graphene Sheets

Ömeroğlu Ö., Kutlu E., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.620

First Principle Calculations of Zn and Cd-Doped Zigzag Graphene Nanoribbons

Kutlu E., Ömeroğlu Ö., Ibrahem R., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.611

First Principles Study of Interaction Between Ru and Graphene Nanoribbons

LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E.

2nd Int. Conf. on Comp. for Sci. and Techno, Niğde, Türkiye, 9 - 11 Temmuz 2012, ss.70

The effect of in situ Si3N4 passivation on hot electron energy relaxation rates in AlGaN GaN Hetrostructures

Atmaca G., Malin T., Kutlu E., Ardalı Ş., Narin P., Mansurov V., et al.

GaN InN AlN 2015, 23 - 25 Mayıs 2015

Density Functional Theory Investigation of the Interaction of CO molecule with CuO Nanolayer Defect Centers

Turhan P., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.148

A Theoretical Study of (5,0) Zigzag BexZn1-Xo Nanotubes: Investigation of Structural, Electronic and Optic Properties Using Density Functional Theory

Kuloğlu A. F., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.588

Kenarlari Paladyum Atomlari ile Sonlandirilmis Farkli Genisliklerdeki Armchair Grafen Nanoseritlerin Elektronik Ozelliklerinin Yogunluk Fonksiyonu Teorisi Kullanilarak Incelenmesi

Kuloğlu A. F., Alsancak B., Güneş C., LİŞESİVDİN S. B., ÖZBAY E.

1. Yoğun Madde Fiziği İzmir Toplantısı, İzmir, Türkiye, 06 Nisan 2012, ss.1

Growth of ZnO Nanostructures on Sapphire by Ultrasonic Spray CVD

NARİN P., Kutlu E., LİŞESİVDİN S. B.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.29

Simulation of the interfacial AIN layer on band structures and carrier densities of AlGaN/GaN HEMT structures

LİŞESİVDİN S. B., Kasap M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.622

Li Katkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin İncelenmesi

Kutlu E., Narin P., Atmaca G., Al Abbas J., LİŞESİVDİN B., LİŞESİVDİN S. B.

ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.151

GaN-tabanli HEMT Yapilarin Hareketliligi ve Tasiyici Yogunlugunun Deneysel Incelenmesi

Güneş C., Kuloğlu A. F., LİŞESİVDİN S. B., ÖZBAY E.

1. Yoğun Madde Fiziği İzmir Toplantısı, İzmir, Türkiye, 06 Nisan 2012, ss.18

MBE Growth and Characterization of n-AlGaAs/GaAs Heterojunction

ALTUNTAŞ H., LİŞESİVDİN S. B., YILDIZ A., Mammedov T., ÖZÇELİK S.

Turkish Physical Society 24th International Physics Congress, Malatya, Türkiye, 28 - 31 Ağustos 2007, ss.414

Investigation of electrical properties of two dimensional hole gas in hybrid InGaN/ZnO heterotructure

Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN S. B., KASAP M.

Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.401

Power loss Mechanisms in Surface Passivated AlGaN AlN GaN Heterojunctions

TIRAŞ E., Atmaca G., LİŞESİVDİN S. B., Ardalı Ş., Malin T., Mansurov V., et al.

OSA 2015 Conference on Lasers and Electro-Optics Pacific Rim, Busan, Güney Kore, 24 - 28 Ağustos 2015

Two diodes model in the forward bias current voltage I V characteristics of Al0 33Ga0 67As n GaAs at room temperature

GÜNEŞ M., LİŞESİVDİN B., Henini M., ALTINDAL Ş.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

AlGaN/GaN-temelli Yuksek Hareketlilige Sahip Transistorlerde InGaN Geribariyerin Dislokasyon Yogunluguna Etkisi

LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E.

ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.131

Safir ve SiC Üzerine Büyütülmüş AlGaN/AlN/GaN HEMT Yapılardaki Sıcak Elektron Dinamiğinin Karşılaştırılması

Ilgaz A., Gökden S., Teke A., Özçelik S., Lişesivdin B., Özbay E.

16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Kasım 2009, ss.73

First Principle Calculations of Electrical Properties of Insulator Wurtzite Beta Si3N4 with the Aluminum Indium and Gallium Impurities

Kutlu E., Narin P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

GaAs Tabanlı Bir MOSFET Yapının 2-Boyutta Akım – Gerilim Karakteristiklerinin İncelenmesi

Kuloğlu A. F., LİŞESİVDİN S. B., KASAP M.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.88

A First Principle Investigations of The Electronic Structures For ZGNRs Terminated With Zn, Cd and H

J. M. A. A., Narin P., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.587

Numerical Optimization of 2DEG Improvement in AlGaN/GaN HEMTs with C-GaN/u-GaN Multi-layer Buffer Structure

Atmaca G., Kim J. G., Lee J. H., Won C. H., Kang S. H., LİŞESİVDİN S. B., et al.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.629

Effect of Transducer Power on Optical and Structural Properties of ZnO Nanostructures

Kutlu E., NARİN P., YILDIZ A., LİŞESİVDİN S. B.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.30

Structural and Optical Properties of ZnO Nanoplatelet Structure Grown by Mist-CVD

NARİN P., Kutlu-Narin E., LİŞESİVDİN S. B.

Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.240

Gain in electrically-driven 1.3 um dilute nitride VCSOAs

LİŞESİVDİN S. B., Khan N. A., Mazzucato S., Balkan N., Adams M. J.

COST MP0805 Final Meeting, İstanbul, Türkiye, 24 Eylül 2013, ss.17

Determination of Structural and Electrical Properties of ZnO Thin Films Grown By Mist-Cvd Method on Sapphire with Different Orientations

Yayla M., LİŞESİVDİN S. B., KASAP M.

Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.236

Hot electron transport based devices for optoelectronics

EROL A., MUTLU S., LİŞESİVDİN S. B., TIRAŞ E.

International Conference on Condensed Matter and Materials Science, 11 - 15 Ekim 2017

Optimization of Al-mole Fraction and Layer Thicknesses in AlxGa1-xN/AlN/GaN/AlxGa1-xN/AlN/GaN Double Channel HEMT Structure

Elibol K., Atmaca G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.

Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.454

Back-Side Via Etching Application of SiC for GaN-Based Transistors

haliloglu m. t., LİŞESİVDİN S. B., ÖZBAY E.

1st Light and Light-Based Technologies Workshop, Ankara, Türkiye, 15 Mayıs - 15 Ağustos 2018, ss.51

Numerical Investigation Of 2DEG Properties In Ultrathin Barrier AlN GaN Heterostructures With AlGaN and InGaN Back Barriers

Al Abbas J. M., Atmaca G., Narin P., Kutlu E., LİŞESİVDİN B., LİŞESİVDİN S. B.

18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.47

Ultraince AlN GaN Çokluyapılarda Farklı Katmanların Katkılanmasının 2BEG Üzerine etkisi

AL ABBAS J. M., NARİN P., ATMACA G., KUTLU E., LİŞESİVDİN S. B., LİŞESİVDİN B.

ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016

The Electronic Properties of Asymmetrical Armchair Boron Nitride Nanoribbons With Germanium Termination

Ömeroğlu Ö., LİŞESİVDİN S. B., ÖZBAY E.

Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 09 Eylül 2018, ss.475

Improved Scattering Analysis of 2DEG carriers in Al0.25Ga0.75N/GaN Heterostructures

LİŞESİVDİN S. B., YILDIZ A., ACAR S., KASAP M., ÖZÇELİK S., GÖKDEN S., et al.

NanoTr3 Conference Proceedings, Ankara, Türkiye, 11 - 14 Haziran 2007, ss.134

Transport properties of the 2DEG and minority carriers in AlGaN/GaN HEMT Structures grown by MOCVD

LİŞESİVDİN S. B., ACAR S., KASAP M.

13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Kasım 2006, ss.104

Zn ve Cd Atomları ile Katkılanmış “Armchair” Grafen Nanoşeritlerin Elektronik Yapıları

LİŞESİVDİN S. B., Kutlu E., J. M. A. A., Ömeroğlu Ö., Ibrahem R., ÖZBAY E.

ADIM FİZİK GÜNLERİ VI, Balıkesir, Türkiye, 19 - 21 Temmuz 2017, ss.152

Strain calculations from hall measurements in undoped Al0.25Ga0.75N/GaN HEMT structures

LİŞESİVDİN S. B., Yildiz A., Kasap M., Oezbay E.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.623

SiC üzerine büyütülen grafen yapılarda elektriksel iletim kanallarının ayrıştırılıp incelenmesi

LİŞESİVDİN S. B., Atmaca G., ARSLAN E., Ul-Hassan J., Janzen E., ÖZBAY E.

19. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 20 Aralık 2013, ss.13

Self-consistent Transport Properties of Graphene Sheets

Elibol K., Atmaca G., Kelekçi Ö., TUNAY TAŞLI P., ÖZBAY E., LİŞESİVDİN S. B.

Turkish Physical Society 28th International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2011, ss.710

Erbiyum Katkılı Eklem Diyotun I-V Karakteristiği

Kartaloğlu O., Atmaca G., Elibol K., LİŞESİVDİN S. B.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.46

Sigma Vectors in Nodal Aberration Theory for High-Precision Telescope Alignment

Yeşiltepe M., Arpa E., LİŞESİVDİN S. B., KARCI Ö.

Fotonik 2022, Ankara, Türkiye, 09 Eylül 2022

Cift kanalli AlGaAs/InGaAs/GaAs tabanli p-HEMT Yapilarinda 1 ve 2-boyutta Schrödinger-Poisson Cozumleri ve Akim-Gerilim Incelemeleri

Atmaca G., Elibol K., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.

16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.59

P tipi ve N tipi InGaN Arka Bariyerli Ultraince AlInN GaN Çoklu Yapılarda İki Boyutlu Elektron Gazı

AlAbbas J., Narin P., Kutlu E., Atmaca G., LİŞESİVDİN S. B., LİŞESİVDİN B.

ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.163

Small Polaron Transport In Titanium Dioxide Thin Film

YILDIZ A., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., Mardare D.

Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.133

Electrical characteristics of GaAs AlGaAs Structures in the wide Frequency and applied bias voltage ranges at room temperature

GÜNEŞ M., LİŞESİVDİN B., PESEN E., Henini M., ALTINDAL Ş.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures

Atmaca G., Narin P., Kutlu E., LİŞESİVDİN S. B.

IX. Uluslararası Balkan Fizik Birliği Konferansı, 24 - 27 Ağustos 2015

A First Principle Calculations of Monolayer InSe Impurity with Pd, Pt, Ag, and Au

Abbas J. M. A., NARİN P., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.239

Investigation of the Beating Pattern of Shubnikov-De Haas Oscillations and Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures

LİŞESİVDİN S. B., Balkan N., Makarovsky O., Patane A., YILDIZ A., Çalışkan M. D., et al.

Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.484

Effects of ultrathin InGaN channel layer on two dimensional electron gas in hybrid GaN/InGaN/ZnO heterostructures

NARİN P., Atmaca G., LİŞESİVDİN S. B.

Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.406

InAlN/GaN Temelli Yuksek Elektron Mobiliteli Transistörlerin (HEMT) Elektron ve Magneto Iletim Ozellikleri

TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.

ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.65

QMSA Analysis and Effects of Extreme Space-Charge Scattering on the Mobility in III-V Systems grown by MBE

LİŞESİVDİN S. B., ACAR S., KASAP M., ÖZÇELİK S.

Turkish Physical Society 23th International Physics Congress, Muğla, Türkiye, 13 - 16 Eylül 2005, ss.1214

Galvanomagnetic measurements of LEC grown Te-doped InSb

LİŞESİVDİN S. B., Yurdugul U., DEMİREZEN S., ACAR S., KASAP M.

11. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Aralık 2004, ss.79

The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures

Atmaca G., Malin T., Kutlu E., Ardalı Ş., Narin P., Mansurov V., et al.

10th All-Russian Conference Gallium, aluminum and indium nitrides, 23 - 25 Mart 2015

Implementation of Simple Parallel Conduction Extraction Method (SPCEM) for seperating 2D and 3D conduction channels in semiconductor structures

LİŞESİVDİN S. B.

Конференция И Школа Молодых Учёных По Актуальным Проблемам Физики Полупроводниковых Структур, Novosibirsk, Rusya, 15 Eylül 2014, ss.25

Investigation of Optical Properties of the Beta Si3N4 Structure doped with some group IIIA Elements

Narin P., Kutlu E., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1. Uluslararası Organik Elektronik Malzeme Teknolojileri Konferansı, 25 - 28 Mart 2015

First Principle Calculations of Electrical Properties of lnsulator Wurtzite the Si3N4 with the Aluminum lndium and Gallium lmpurities

Kutlu E., Narin P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1. Uluslararası Organik Elektronik Malzeme Teknolojileri Konferansı, 25 - 28 Mart 2015

Electrical Conductivity Behaviour in Anatase Phase TiO2

YILDIZ A., LİŞESİVDİN S. B., ACAR S., KASAP M., Mardare D.

NanoTr3 Conference Proceedings, Ankara, Türkiye, 11 - 14 Haziran 2007, ss.151

Influence of interface traps on device performance of AlGaN/GaN HEMTS with Si3N4 passivation

Atmaca G., Evrensel A. E., LİŞESİVDİN S. B.

Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.371

Electron Confinement in Lattice-Matched InAlN/AlN/GaN Heterostructures with AlyGa1-yN Back-barrier

Atmaca G., TUNAY TAŞLI P., LİŞESİVDİN S. B.

8th Nanoscience and Nanotechnology Conference, Ankara, Türkiye, 25 - 29 Haziran 2012, ss.332

InGaN arka bariyerli AlxGa1-xN/AlN/GaN HEMT yapılarındaki ince filmlerin alaşım oranları ve kalınlıklarının nümerik optimizasyonu

Kelekçi Ö., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.17

Kitap & Kitap Bölümleri

Nanoteknoloji Devrimini Anlamak

LİŞESİVDİN B., LİŞESİVDİN S. B.

Nobel Yayınevi, 2014

Chapter 15: The Effects of the Interaction of Transition Metals on the Electronic Properties of the Graphene Nanosheets and Nanoribbons

Lişesivdin S. B., Lişesivdin B., Özbay E.

Graphene Science Handbook Vol.3, Mahmood Aliofkhazraei,Nasar Ali,William I. Milne,Cengiz S. Ozkan,Stanislaw Mitura,Juana L. Gervasoni, Editör, CRC, New York , Florida, ss.221-235, 2016