Articles
56
All (56)
SCI-E, SSCI, AHCI (56)
SCI-E, SSCI, AHCI, ESCI (56)
Scopus (54)
TRDizin (1)
5. Analysis Of The Number Of Shots Using Graphite Furnace Atomic AbsorptionSpectrometry On The Gunshot Residues Deposited in The Barrel
SYLWAN
, vol.159, no.1, pp.14-26, 2015 (SCI-Expanded, Scopus)
6. Study on growth and characterizations of GaxIn1-xP/GaAs solar cell structure
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.24, no.9, pp.3269-3274, 2013 (SCI-Expanded, Scopus)
8. Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, vol.209, no.3, pp.434-438, 2012 (SCI-Expanded, Scopus)
12. The substrate temperature dependent electrical properties of titanium dioxide thin films
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.21, no.7, pp.692-697, 2010 (SCI-Expanded, Scopus)
17. Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, vol.13, no.2, pp.105-108, 2010 (SCI-Expanded, Scopus)
19. Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
, vol.98, no.3, pp.557-563, 2010 (SCI-Expanded, Scopus)
24. The effect of intrinsic defects on the hole transport in Cu2O
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, vol.3, no.10, pp.1034-1037, 2009 (SCI-Expanded, Scopus)
27. Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, vol.11, no.5, pp.578-582, 2009 (SCI-Expanded, Scopus)
43. High temperature variable-range hopping conductivity in undoped TiO2 thin film
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, vol.1, no.10, pp.531-533, 2007 (SCI-Expanded)
47. The temperature dependence of electron and magneto transport properties in Te-doped InSb
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, vol.201, no.14, pp.3113-3120, 2004 (SCI-Expanded, Scopus)
Papers Presented at Peer-Reviewed Scientific Conferences
50
1. Determination of Structural and Electrical Properties of ZnO Thin Films Grown By Mist-Cvd Method on Sapphire with Different Orientations
Turkish Physical Society 37th International Physics Congress, Muğla, Turkey, 01 September 2021, pp.236, (Summary Text)
2. The Study on Antimony Diffusion in Gallium-Doped Germanium Grown by Chochralski Technique
Turkish Physical Society 33th International Physics Congress, Muğla, Turkey, 6 - 10 September 2017, (Summary Text)
3. The Study on Antimony Diffusion in Gallium-doped Germanium Grown by Czochralski Technique
Turkish Physical Society 33th International Physics Congress (TFD33), Muğla, Turkey, 6 - 10 September 2017, (Summary Text)
4. Pt Metal Kümelerin Katkısız SnO2 Sensör Yapılarının Algılama Özelliklerine Etkisi
22. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 16 December 2016, (Summary Text)
5. Germanyum Kızıl Ötesi Optik Pencereler ve Elektromanyetik Girişim
22. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 16 December 2016, (Summary Text)
7. Sb Katkılı Hacimli Germanyum Tek Kristal Büyütülmesi ve Karakterizasyonu
21. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 25 December 2015, (Summary Text)
8. Electrical, Optical And Structural Properties of SnO2 Thin Films
9th International Physics Conference of the Balkan Physical Union – BPU9, İstanbul, Turkey, 24 - 27 August 2015, (Summary Text)
10. Investigation of electrical properties of two dimensional hole gas in hybrid InGaN/ZnO heterotructure
Turkish Physical Society 31th International Physics Congress, Muğla, Turkey, 21 July 2014, pp.401, (Summary Text)
11. Temperature dependent hall effect studies on the InxGa1 xAs InP MSM infrared photodetectors
XXIII International Scientific and Engineering Conference on Photoelectronics and Night Vision Devices, Moskva, Russia, 28 - 30 May 2014
12. Katkısız Ge Tek-Kristal Yarıiletkenlerin Büyütülmesi ve Elektriksel Karakterizasyonları
19. Yoğun Madde Fiziği Ankara Toplantısı, Turkey, 20 December 2013, (Summary Text)
13. Properties of GaAs/Ge growth by metal organic chemical vapor deposition
Turkish Physical Society 30th International Physics Congress, İstanbul, Turkey, 2 - 05 September 2013, (Summary Text)
14. The Investigation of Temperature Dependent Electrical Transport Properties of InxGa1-xP/GaAs
Turkish Physical Society 30th International Physics Congress, İstanbul, Turkey, 2 - 05 September 2013, (Summary Text)
15. Scattering Analysis of 2DEG in AlInN/GaN Based Heterostructures With GaN and InGaN Quantum Wells
Turkish Physical Society 30th International Physics Congress, İstanbul, Turkey, 2 - 05 September 2013, (Summary Text)
18. The structural and morphological characterizations of GaAs/Ge structure
NanoTR-9, Erzurum, Turkey, 24 - 28 June 2013, (Summary Text)
19. InAlN/GaN Temelli Yuksek Elektron Mobiliteli Transistörlerin (HEMT) Elektron ve Magneto Iletim Ozellikleri
ADIM Physics Congress II, Denizli, Turkey, 25 - 27 April 2012, pp.65, (Summary Text)
20. InGaN arka bariyerli AlxGa1-xN/AlN/GaN HEMT yapılarındaki ince filmlerin alaşım oranları ve kalınlıklarının nümerik optimizasyonu
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 05 October 2010, pp.17, (Summary Text)
21. Grafen Flake Üretim Yöntemlerinin Geliştirilmesi
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 05 October 2010, pp.2, (Summary Text)
22. GaN Tabanlı MESFET Yapıların 2-boyutta Elektriksel Karakteristikleri
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 05 October 2010, pp.34, (Summary Text)
23. Eklem Alan Etkili Transistörlerin Elektriksel Karakteristiklerinin İncelenmesi
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 05 October 2010, pp.12, (Summary Text)
24. GaAs Tabanlı Bir MOSFET Yapının 2-Boyutta Akım – Gerilim Karakteristiklerinin İncelenmesi
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 05 October 2010, pp.88, (Summary Text)
26. MBE Tekniği ile büyütülen AlGaAs/GaAs Lazer Diyot Yapısının Yapısal, Optik ve Elektriksel Özelliklerinin İncelenmesi
11. Ulusal Optik, Elektro-Optik ve Fotonik Toplantısı, Turkey, 16 October 2009, (Summary Text)
27. Cift kanalli AlGaAs/InGaAs/GaAs tabanli p-HEMT Yapilarinda 1 ve 2-boyutta Schrödinger-Poisson Cozumleri ve Akim-Gerilim Incelemeleri
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 06 October 2009, pp.59, (Summary Text)
28. Sicakliga ve manyetik alana bagli Hall olcumlerinin analizi ile DX-merkezi aktivasyon enerjisi hesabi
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 06 October 2009, pp.9, (Summary Text)
29. A Numerical Study on Subband Structure of AlxIn1-xN/GaN-based HEMT Structures with Low-Indium (x>0.82) Barrier Layer
Turkish Physical Society 26th International Physics Congress, Muğla, Turkey, 24 - 27 September 2009, pp.509, (Summary Text)
30. Determination of Two-Dimensional Electron and Hole Gas Carriers in Al0.88In0.12N/GaN-based Heterostructures Grown by Metal Organic Chemical Vapor Deposition
Turkish Physical Society 26th International Physics Congress, Muğla, Turkey, 24 - 27 September 2009, pp.510, (Summary Text)
31. Optimization of Al-mole Fraction and Layer Thicknesses in AlxGa1-xN/AlN/GaN/AlxGa1-xN/AlN/GaN Double Channel HEMT Structure
Turkish Physical Society 25th International Physics Congress, Muğla, Turkey, 25 - 29 August 2008, pp.454, (Summary Text)
32. Small Polaron Transport In Titanium Dioxide Thin Film
Turkish Physical Society 25th International Physics Congress, Muğla, Turkey, 25 - 29 August 2008, pp.133, (Summary Text)
33. Investigation of the Beating Pattern of Shubnikov-De Haas Oscillations and Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures
Turkish Physical Society 25th International Physics Congress, Muğla, Turkey, 25 - 29 August 2008, pp.484, (Summary Text)
34. On the conduction mechanism of TiO2
8th International Conference on Physics of Advanced Materials, Iasi, Romania, 4 - 07 June 2008, pp.28, (Summary Text)
35. Stokes shift in In0.13Ga0.87N epitaxial layer grown by MOVPE
Turkish Physical Society 24th International Physics Congress, Malatya, Turkey, 28 - 31 August 2007, pp.152, (Summary Text)
37. Electrical Conductivity Behaviour in Anatase Phase TiO2
NanoTr3 Conference Proceedings, Ankara, Turkey, 11 - 14 June 2007, pp.151, (Summary Text)
38. Improved Scattering Analysis of 2DEG carriers in Al0.25Ga0.75N/GaN Heterostructures
NanoTr3 Conference Proceedings, Ankara, Turkey, 11 - 14 June 2007, pp.134, (Summary Text)
46. Two dimensional hole gas (2DHG) formation evidence in AlGaN/GaN/AlN HEMTs
13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 03 November 2006, pp.105, (Summary Text)
47. Transport properties of the 2DEG and minority carriers in AlGaN/GaN HEMT Structures grown by MOCVD
13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 03 November 2006, pp.104, (Summary Text)
48. QMSA Analysis and Effects of Extreme Space-Charge Scattering on the Mobility in III-V Systems grown by MBE
Turkish Physical Society 23th International Physics Congress, Muğla, Turkey, 13 - 16 September 2005, pp.1214, (Summary Text)
49. Galvanomagnetic measurements of LEC grown Te-doped InSb
11. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 03 December 2004, pp.79, (Summary Text)
50. Temperature depence of magnetotransport and electrotransport properties of LEC grown S-doped InAs
11. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Turkey, 03 December 2004, pp.67, (Summary Text)