Yayınlar & Eserler

Yayın Ağı
Makaleler 56
Tümü (56)
SCI-E, SSCI, AHCI (56)
SCI-E, SSCI, AHCI, ESCI (56)
Scopus (54)
TRDizin (1)

1. Temperature dependent electron transport properties of degenerate SnO2 thin films

Boyali E., Baran V., ASAR T., Ozcelik S., Kasap M.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.692, ss.119-123, 2017 (SCI-Expanded) identifier identifier

2. Evaluation of morphological and chemical differences of gunshot residues in different ammunitions using SEM/EDS technique

Kara I., Sarikavak Y., LİŞESİVDİN S. B., KASAP M.
ENVIRONMENTAL FORENSICS , cilt.17, sa.1, ss.68-79, 2016 (SCI-Expanded) identifier identifier

3. The Relationship Between the Surface Morphology and Chemical Composition of Gunshot Residue Particles

Kara I., LİŞESİVDİN S. B., Kasap M., Er E., Uzek U.
JOURNAL OF FORENSIC SCIENCES , cilt.60, sa.4, ss.1030-1033, 2015 (SCI-Expanded) identifier identifier identifier

4. Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

Atmaca G., Narin P., Lisesivdin S. B., Kasap M., Sarikavak-Lisesivdin B.
PHILOSOPHICAL MAGAZINE , cilt.95, sa.1, ss.79-89, 2015 (SCI-Expanded) identifier identifier

5. Analysis Of The Number Of Shots Using Graphite Furnace Atomic AbsorptionSpectrometry On The Gunshot Residues Deposited in The Barrel

KARA İ., YALÇINKAYA Ö., LİSESİVDİN S. B., KASAP M.
SYLWAN , cilt.159, sa.1, ss.14-26, 2015 (SCI-Expanded)

6. Study on growth and characterizations of GaxIn1-xP/GaAs solar cell structure

Kınacı B., Özen Y., Asar T., Cetin S. Ş., Memmedli T., Kasap M., et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.24, sa.9, ss.3269-3274, 2013 (SCI-Expanded) identifier identifier

7. Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

Kelekci O., Tasli P., Cetin S. Ş., Kasap M., Ozcelik S., Ozbay E.
CURRENT APPLIED PHYSICS , cilt.12, sa.6, ss.1600-1605, 2012 (SCI-Expanded) Creative Commons License identifier identifier

8. Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD

Kelekci O., Tasli P. T., Yu H., KASAP M., ÖZÇELİK S., ÖZBAY E.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.209, sa.3, ss.434-438, 2012 (SCI-Expanded) Creative Commons License identifier identifier

9. Epitaxial growth and electrical characterization of germanium

Bosi M., Attolini G., Ferrari C., Frigeri C., Calicchio M., Gombia E., et al.
CRYSTAL RESEARCH AND TECHNOLOGY , cilt.46, sa.8, ss.813-817, 2011 (SCI-Expanded) Creative Commons License identifier identifier

10. Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition

Yildiz A., Tasli P., Sarikavak B., Lisesivdin S. B., Ozturk M. K., Kasap M., et al.
SEMICONDUCTORS , cilt.45, sa.1, ss.33-36, 2011 (SCI-Expanded) Creative Commons License identifier identifier

11. Electron-Electron Interactions in Sb-Doped SnO2 Thin Films

Serin T., Yildiz A., SERİN N., Yildirim N., Ozyurt F., KASAP M.
JOURNAL OF ELECTRONIC MATERIALS , cilt.39, sa.8, ss.1152-1158, 2010 (SCI-Expanded) identifier identifier

12. The substrate temperature dependent electrical properties of titanium dioxide thin films

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.21, sa.7, ss.692-697, 2010 (SCI-Expanded) Creative Commons License identifier identifier

13. Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier

LİŞESİVDİN S. B., Tasli P., Kasap M., Ozturk M., Arslan E., Ozcelik S., et al.
THIN SOLID FILMS , cilt.518, sa.19, ss.5572-5575, 2010 (SCI-Expanded) Creative Commons License identifier identifier

14. Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method

Lişesivdin S. B., Yildiz A., Balkan N., Kasap M., Ozcelik S., Ozbay E.
JOURNAL OF APPLIED PHYSICS , cilt.108, sa.1, 2010 (SCI-Expanded) Creative Commons License identifier identifier

15. Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers

Yildiz A., LİŞESİVDİN S. B., Tasli P., Ozbay E., Kasap M.
CURRENT APPLIED PHYSICS , cilt.10, sa.3, ss.838-841, 2010 (SCI-Expanded) Creative Commons License identifier identifier

16. The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE

Yildiz A., Kasap M.
LOW TEMPERATURE PHYSICS , cilt.36, sa.4, ss.320-324, 2010 (SCI-Expanded) Creative Commons License identifier identifier

17. Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures

Bengi A., LİŞESİVDİN S. B., Kasap M., Mammadov T., Ozcelik S., Ozbay E.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.13, sa.2, ss.105-108, 2010 (SCI-Expanded) Creative Commons License identifier identifier

18. The thickness effect on the electrical conduction mechanism in titanium oxide thin films

Yildiz A., Serin N., Kasap M., Serin T., Mardare D.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.493, ss.227-232, 2010 (SCI-Expanded) identifier identifier

19. Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

Yildiz A., LİŞESİVDİN S. B., Kasap M., Ozcelik S., Ozbay E., Balkan N.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.98, sa.3, ss.557-563, 2010 (SCI-Expanded) Creative Commons License identifier identifier

20. Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Tasli P., LİŞESİVDİN S. B., Yildiz A., Kasap M., Arslan E., Ozcelik S., et al.
CRYSTAL RESEARCH AND TECHNOLOGY , cilt.45, sa.2, ss.133-139, 2010 (SCI-Expanded) Creative Commons License identifier identifier

21. Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN

Tasli P., Yildiz A., Kasap M., Ozbay E., LİŞESİVDİN S. B., Ozcelik S.
PHILOSOPHICAL MAGAZINE , cilt.90, sa.26, ss.3591-3599, 2010 (SCI-Expanded) identifier identifier

22. Electrical conduction properties of Si delta-doped GaAs grown by MBE

Yildiz A., LİŞESİVDİN S. B., Altuntas H., Kasap M., Ozcelik S.
PHYSICA B-CONDENSED MATTER , cilt.404, sa.21, ss.4202-4206, 2009 (SCI-Expanded) Creative Commons License identifier identifier

23. Crossover from Nearest-Neighbor Hopping Conduction to Efros-Shklovskii Variable-Range Hopping Conduction in Hydrogenated Amorphous Silicon Films

Yildiz A., SERİN N., Serin T., KASAP M.
JAPANESE JOURNAL OF APPLIED PHYSICS , cilt.48, sa.11, 2009 (SCI-Expanded) identifier identifier

24. The effect of intrinsic defects on the hole transport in Cu2O

Yildiz A., Serin N., Serin T., Kasap M.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.3, sa.10, ss.1034-1037, 2009 (SCI-Expanded) identifier

25. Structural, electrical and optical characterization of InGaN layers grown by MOVPE

Yildiz A., Kemal O. M., Bosi M., Ozcelik S., Kasap M.
CHINESE PHYSICS B , cilt.18, sa.9, ss.4007-4012, 2009 (SCI-Expanded) identifier identifier

26. DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

LİŞESİVDİN S. B., Altuntas H., Yildiz A., Kasap M., Ozbay E., Ozcelik S.
SUPERLATTICES AND MICROSTRUCTURES , cilt.45, sa.6, ss.604-611, 2009 (SCI-Expanded) Creative Commons License identifier identifier

27. Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)

Atmaca G., Elibol K., LİŞESİVDİN S. B., Kasap M., Ozbay E.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.11, sa.5, ss.578-582, 2009 (SCI-Expanded) identifier

28. Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

LİŞESİVDİN S. B., Balkan N., Makarovsky O., Patane A., Yildiz A., Caliskan M. D., et al.
JOURNAL OF APPLIED PHYSICS , cilt.105, sa.9, 2009 (SCI-Expanded) Creative Commons License identifier identifier

29. Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.
PHYSICA B-CONDENSED MATTER , cilt.404, ss.1423-1426, 2009 (SCI-Expanded) identifier identifier

30. Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

Yildiz A., LİŞESİVDİN S. B., Kasap M., Bosi M.
SOLID STATE COMMUNICATIONS , cilt.149, ss.337-340, 2009 (SCI-Expanded) identifier identifier

31. Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

TÜLEK R., ILGAZ A., GÖKDEN S., TEKE A., Ozturk M. K., KASAP M., et al.
JOURNAL OF APPLIED PHYSICS , cilt.105, sa.1, 2009 (SCI-Expanded) Creative Commons License identifier identifier

32. Electrical properties of TiO(2) thin films

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.
JOURNAL OF NON-CRYSTALLINE SOLIDS , cilt.354, ss.4944-4947, 2008 (SCI-Expanded) identifier identifier

33. Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements

LİŞESİVDİN S. B., Demirezen S., Caliskan M. D., Yildiz A., Kasap M., Ozcelik S., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.23, sa.9, 2008 (SCI-Expanded) Creative Commons License identifier identifier

34. The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates

Arslan E., Butun S., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.
JOURNAL OF APPLIED PHYSICS , cilt.103, sa.10, 2008 (SCI-Expanded) Creative Commons License identifier identifier

35. Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy

Yildiz A., Dagdelen F., ACAR S., LİŞESİVDİN S. B., Kasap M., AYDOĞDU Y., et al.
ACTA PHYSICA POLONICA A , cilt.113, sa.2, ss.731-739, 2008 (SCI-Expanded) identifier identifier

36. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

ACAR S., LİŞESİVDİN S. B., Kasap M., Oezcelik S., Oezbay E.
THIN SOLID FILMS , cilt.516, sa.8, ss.2041-2044, 2008 (SCI-Expanded) Creative Commons License identifier identifier

37. Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements

LİŞESİVDİN S. B., Arslan E., Kasap M., Ozcelik S., Ozbay E.
JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.20, sa.4, 2008 (SCI-Expanded) Creative Commons License identifier identifier

38. The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures

LİŞESİVDİN S. B., Yildiz A., ACAR S., Kasap M., Oezcelik S., Oezbay E.
PHYSICA B-CONDENSED MATTER , cilt.399, sa.2, ss.132-137, 2007 (SCI-Expanded) Creative Commons License identifier identifier

39. Electron transport in Ga-rich InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M., Bosi M.
CHINESE PHYSICS LETTERS , cilt.24, sa.10, ss.2930-2933, 2007 (SCI-Expanded) identifier identifier

40. Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis

LİŞESİVDİN S. B., Yildiz A., ACAR S., Kasap M., Ozcelik S., Ozbay E.
APPLIED PHYSICS LETTERS , cilt.91, sa.10, 2007 (SCI-Expanded) Creative Commons License identifier identifier

41. Temperature-dependent electron transport in In0.5Ga0.5P/GaAs grown by MOVPE

ACAR S., Yildiz A., Kasap M., Bosi M.
CHINESE PHYSICS LETTERS , cilt.24, sa.8, ss.2373-2375, 2007 (SCI-Expanded) identifier identifier

42. Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

LİŞESİVDİN S. B., ACAR S., Kasap M., Ozcelik S., Gokden S., Ozbay E.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.22, sa.5, ss.543-548, 2007 (SCI-Expanded) Creative Commons License identifier identifier

43. High temperature variable-range hopping conductivity in undoped TiO2 thin film

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.1, sa.10, ss.531-533, 2007 (SCI-Expanded) identifier

44. Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors

LİŞESİVDİN S. B., Yildiz A., Kasap M.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.1, sa.9, ss.467-470, 2007 (SCI-Expanded) identifier

45. Quantitative mobility spectrum analysis for determination of electron and magneto transport properties of Te-doped GaSb

ACAR S., Kasap M., Isik B., Ozcelik S., Tugluoglu N., Karadeniz S.
Chinese Physics Letters , cilt.22, sa.9, ss.2363-2366, 2005 (SCI-Expanded) identifier identifier

46. Temperature-dependent galvanomagnetic measurements on doped InSb and InAs grown by liquid encapsulated czochralski

Kasap M., ACAR S., Ozcelik S., Karadeniz S., Tugluoglu N.
Chinese Physics Letters , cilt.22, sa.5, ss.1218-1221, 2005 (SCI-Expanded) identifier identifier

47. The temperature dependence of electron and magneto transport properties in Te-doped InSb

Kasap M., ACAR S.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.201, sa.14, ss.3113-3120, 2004 (SCI-Expanded) identifier identifier

48. Temperature-dependent barrier characteristics of inhomogeneous in/p-Si (100) Schottky barrier diodes

Tugluoglu N., Karadeniz S., ACAR S., Kasap M.
CHINESE PHYSICS LETTERS , cilt.21, sa.9, ss.1795-1798, 2004 (SCI-Expanded) identifier identifier

49. Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes

ACAR S., Karadeniz S., Tugluoglu N., Selcuk A., Kasap M.
APPLIED SURFACE SCIENCE , cilt.233, ss.373-381, 2004 (SCI-Expanded) identifier identifier

50. Conductivity, Hall and magnetoresistance effect measurements on SIGaAs and InP

ACAR S., Kasap M.
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , cilt.201, sa.7, ss.1551-1557, 2004 (SCI-Expanded) identifier identifier

51. Prebreakdown current behaviour in the ionization cell with a semiconductor cathode

Salamov B., Kasap M., Lebedeva N.
JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.33, sa.17, ss.2192-2195, 2000 (SCI-Expanded) identifier identifier

52. The simulation of the two-dimensional Ising model in the presence of an external magnetic field on the Creutz cellular automaton

Kutlu B., Kasap M., Turan S.
INTERNATIONAL JOURNAL OF MODERN PHYSICS C , cilt.11, sa.3, ss.561-572, 2000 (SCI-Expanded) identifier identifier

53. The concentration of currents on the artificial surface inhomogeneities of semiconducting cathodes in ionization cells

Salamov B., Ozer M., Kasap M., Altindal Ş.
JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.32, sa.6, ss.682-687, 1999 (SCI-Expanded) identifier identifier

54. The temperature and pressure dependence of electron transport in plastically relaxed InxGa1-xAs

Kasap M., Lancefield D.
PHYSICA STATUS SOLIDI B-BASIC RESEARCH , cilt.199, sa.2, ss.481-493, 1997 (SCI-Expanded) identifier identifier

55. The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films

Salamov B., Civi M., Altindal Ş., Kasap M., BULUR E.
JOURNAL OF INFORMATION RECORDING , cilt.23, sa.5, ss.437-445, 1997 (SCI-Expanded) identifier identifier

56. Impurity conduction in InxGa1-xAs

KASAP M., ÖZER M., Çolakoǧlu K.
Turkish Journal of Physics , cilt.20, sa.7, ss.740-746, 1996 (SCI-Expanded) identifier
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 50

1. Determination of Structural and Electrical Properties of ZnO Thin Films Grown By Mist-Cvd Method on Sapphire with Different Orientations

Yayla M., LİŞESİVDİN S. B., KASAP M.
Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.236, (Özet Bildiri)

2. The Study on Antimony Diffusion in Gallium-Doped Germanium Grown by Chochralski Technique

Baran V., Çat Y., Akın Sönmez N., Özen Y., Kasap M., Özçelik S.
Turkish Physical Society 33th International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, (Özet Bildiri)

3. The Study on Antimony Diffusion in Gallium-doped Germanium Grown by Czochralski Technique

Baran V., Çat Y., Akın Sönmez N., Özen Y., Kasap M., Özçelik S.
Turkish Physical Society 33th International Physics Congress (TFD33), Muğla, Türkiye, 6 - 10 Eylül 2017, (Özet Bildiri)

4. Pt Metal Kümelerin Katkısız SnO2 Sensör Yapılarının Algılama Özelliklerine Etkisi

Boyalı E., Korkmaz B., Sertel T., Efkere H. İ., Özen Y., Çetin S. Ş., et al.
22. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 16 Aralık 2016, (Özet Bildiri)

5. Germanyum Kızıl Ötesi Optik Pencereler ve Elektromanyetik Girişim

Çat Y., Baran V., Kasap M., Özçelik S.
22. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 16 Aralık 2016, (Özet Bildiri)

6. Sb Doping Effect on the Electrical Properties of Germanium Single Cyrstals

BARAN V., ÇAT Y., BOYALI E., ASAR T., KASAP M., ÖZÇELİK S.
2nd International Congres on The World of Technology and Advanced Materials (WITAM2016), Kırşehir, Türkiye, 28 Eylül - 02 Ekim 2016, (Özet Bildiri)

7. Sb Katkılı Hacimli Germanyum Tek Kristal Büyütülmesi ve Karakterizasyonu

Baran V., Çat Y., Asar T., Çetin S. Ş., Kasap M., Özçelik S.
21. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 25 Aralık 2015, (Özet Bildiri)

8. Electrical, Optical And Structural Properties of SnO2 Thin Films

BOYALI E., BAŞKÖSE Ü. C., ASAR T., KASAP M., ÖZÇELİK S.
9th International Physics Conference of the Balkan Physical Union – BPU9, İstanbul, Türkiye, 24 - 27 Ağustos 2015, (Özet Bildiri)

9. Antimon (Sb) Katkılı Germanyum (Ge) Hacimli Tek-Kristalinin Büyütülmesi ve Elektriksel Karakterizasyonu

BARAN V., ÇAT Y., BOYALI E., ASAR T., KASAP M., ÖZÇELİK S.
20. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 26 Aralık 2014, (Özet Bildiri)

10. Investigation of electrical properties of two dimensional hole gas in hybrid InGaN/ZnO heterotructure

Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN S. B., KASAP M.
Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.401, (Özet Bildiri)

11. Temperature dependent hall effect studies on the InxGa1 xAs InP MSM infrared photodetectors

ASAR T., KASAP M., MEMMEDLİ T., ÖZÇELİK S.
XXIII International Scientific and Engineering Conference on Photoelectronics and Night Vision Devices, Moskva, Rusya, 28 - 30 Mayıs 2014

12. Katkısız Ge Tek-Kristal Yarıiletkenlerin Büyütülmesi ve Elektriksel Karakterizasyonları

BARAN V., BOYALI E., ÇAT Y., KASAP M., ÖZÇELİK S.
19. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 20 Aralık 2013, (Özet Bildiri)

13. Properties of GaAs/Ge growth by metal organic chemical vapor deposition

ÇETİN S. Ş., BOSI M., KASAP M., ÖZÇELİK S.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013, (Özet Bildiri)

14. The Investigation of Temperature Dependent Electrical Transport Properties of InxGa1-xP/GaAs

BOYALI E., NARİN P., ATMACA G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013, (Özet Bildiri)

15. Scattering Analysis of 2DEG in AlInN/GaN Based Heterostructures With GaN and InGaN Quantum Wells

NARİN P., ATMACA G., BOYALI E., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013, (Özet Bildiri)

16. A Numerical Investigation on Electronic Properties of Two Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

NARİN P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B., KASAP M.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013, ss.529, (Özet Bildiri)

17. Structural and optical properties of double junction InGaP/GaAs solar cell

ÇETİN S. Ş., KINACI B., ÖZEN Y., BOSI M., ASAR T., KASAP M., et al.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013, (Özet Bildiri)

18. The structural and morphological characterizations of GaAs/Ge structure

KINACI B., AKIN SÖNMEZ N., KIZILKAYA K., ÖZEN Y., ASAR T., ÇETİN S. Ş., et al.
NanoTR-9, Erzurum, Türkiye, 24 - 28 Haziran 2013, (Özet Bildiri)

19. InAlN/GaN Temelli Yuksek Elektron Mobiliteli Transistörlerin (HEMT) Elektron ve Magneto Iletim Ozellikleri

TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.
ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.65, (Özet Bildiri)

20. InGaN arka bariyerli AlxGa1-xN/AlN/GaN HEMT yapılarındaki ince filmlerin alaşım oranları ve kalınlıklarının nümerik optimizasyonu

Kelekçi Ö., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.17, (Özet Bildiri)

21. Grafen Flake Üretim Yöntemlerinin Geliştirilmesi

Elibol K., Kelekçi Ö., Atmaca G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., et al.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.2, (Özet Bildiri)

22. GaN Tabanlı MESFET Yapıların 2-boyutta Elektriksel Karakteristikleri

Elibol K., Atmaca G., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.34, (Özet Bildiri)

23. Eklem Alan Etkili Transistörlerin Elektriksel Karakteristiklerinin İncelenmesi

Atmaca G., Elibol K., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.12, (Özet Bildiri)

24. GaAs Tabanlı Bir MOSFET Yapının 2-Boyutta Akım – Gerilim Karakteristiklerinin İncelenmesi

Kuloğlu A. F., LİŞESİVDİN S. B., KASAP M.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.88, (Özet Bildiri)

25. InGaAs Yarıiletkenin Elektriksel İletkenlik Özellikleri

Kayhan B., Yıldız A., Altuntaş H., Kasap M., Özçelik S.
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Kasım 2009, ss.64, (Özet Bildiri)

26. MBE Tekniği ile büyütülen AlGaAs/GaAs Lazer Diyot Yapısının Yapısal, Optik ve Elektriksel Özelliklerinin İncelenmesi

ÖZÇELİK S., ÇETİN S. Ş., KASAP M., MAMMADOV T.
11. Ulusal Optik, Elektro-Optik ve Fotonik Toplantısı, Türkiye, 16 Ekim 2009, (Özet Bildiri)

27. Cift kanalli AlGaAs/InGaAs/GaAs tabanli p-HEMT Yapilarinda 1 ve 2-boyutta Schrödinger-Poisson Cozumleri ve Akim-Gerilim Incelemeleri

Atmaca G., Elibol K., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.59, (Özet Bildiri)

28. Sicakliga ve manyetik alana bagli Hall olcumlerinin analizi ile DX-merkezi aktivasyon enerjisi hesabi

LİŞESİVDİN S. B., ALTUNTAŞ H., YILDIZ A., KASAP M., ÖZBAY E., ÖZÇELİK S.
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.9, (Özet Bildiri)

29. A Numerical Study on Subband Structure of AlxIn1-xN/GaN-based HEMT Structures with Low-Indium (x>0.82) Barrier Layer

TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M., Elibol K., Atmaca G., ÖZBAY E.
Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.509, (Özet Bildiri)

30. Determination of Two-Dimensional Electron and Hole Gas Carriers in Al0.88In0.12N/GaN-based Heterostructures Grown by Metal Organic Chemical Vapor Deposition

TUNAY TAŞLI P., LİŞESİVDİN S. B., YILDIZ A., KASAP M., ÖZBAY E.
Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.510, (Özet Bildiri)

31. Optimization of Al-mole Fraction and Layer Thicknesses in AlxGa1-xN/AlN/GaN/AlxGa1-xN/AlN/GaN Double Channel HEMT Structure

Elibol K., Atmaca G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.
Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.454, (Özet Bildiri)

32. Small Polaron Transport In Titanium Dioxide Thin Film

YILDIZ A., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., Mardare D.
Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.133, (Özet Bildiri)

33. Investigation of the Beating Pattern of Shubnikov-De Haas Oscillations and Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures

LİŞESİVDİN S. B., Balkan N., Makarovsky O., Patane A., YILDIZ A., Çalışkan M. D., et al.
Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.484, (Özet Bildiri)

34. On the conduction mechanism of TiO2

YILDIZ A., Eker S., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., Mardare D.
8th International Conference on Physics of Advanced Materials, Iasi, Romanya, 4 - 07 Haziran 2008, ss.28, (Özet Bildiri)

35. Stokes shift in In0.13Ga0.87N epitaxial layer grown by MOVPE

YILDIZ A., ALTUNTAŞ H., LİŞESİVDİN S. B., Bengi A., KASAP M.
Turkish Physical Society 24th International Physics Congress, Malatya, Türkiye, 28 - 31 Ağustos 2007, ss.152, (Özet Bildiri)

36. Simulation of the interfacial AlN layer on band structures and carrier densities of AlGaN/GaN HEMT structures

Liceşivdin S., KASAP M.
6TH International Conference of the Balkan Physical Union, İstanbul, Türkiye, 22 Ağustos 2006 - 26 Ağustos 2007, cilt.899, ss.622, (Tam Metin Bildiri) identifier

37. Electrical Conductivity Behaviour in Anatase Phase TiO2

YILDIZ A., LİŞESİVDİN S. B., ACAR S., KASAP M., Mardare D.
NanoTr3 Conference Proceedings, Ankara, Türkiye, 11 - 14 Haziran 2007, ss.151, (Özet Bildiri)

38. Improved Scattering Analysis of 2DEG carriers in Al0.25Ga0.75N/GaN Heterostructures

LİŞESİVDİN S. B., YILDIZ A., ACAR S., KASAP M., ÖZÇELİK S., GÖKDEN S., et al.
NanoTr3 Conference Proceedings, Ankara, Türkiye, 11 - 14 Haziran 2007, ss.134, (Özet Bildiri)

39. Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE

YILDIZ A., ÖZTÜRK M. A., KASAP M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.672, (Tam Metin Bildiri) identifier identifier

40. Mole fraction dependence of mobility in InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.670, (Tam Metin Bildiri) identifier identifier

41. Activation mechanism in InGaN grown by MOVPE

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.671, (Tam Metin Bildiri) identifier identifier

42. Strain calculations from hall measurements in undoped Al0.25Ga0.75N/GaN HEMT structures

LİŞESİVDİN S. B., Yildiz A., Kasap M., Oezbay E.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.623, (Tam Metin Bildiri) identifier

43. Variable-range hopping conductivity in InGaN

Yildiz A., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.293-294, (Tam Metin Bildiri) identifier identifier

44. Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE

Yildiz A., Ozturk M. K., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.295-296, (Tam Metin Bildiri) identifier identifier

45. Simulation of the interfacial AIN layer on band structures and carrier densities of AlGaN/GaN HEMT structures

LİŞESİVDİN S. B., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.622, (Tam Metin Bildiri) identifier

46. Two dimensional hole gas (2DHG) formation evidence in AlGaN/GaN/AlN HEMTs

ACAR S., LİŞESİVDİN S. B., KASAP M.
13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Kasım 2006, ss.105, (Özet Bildiri)

47. Transport properties of the 2DEG and minority carriers in AlGaN/GaN HEMT Structures grown by MOCVD

LİŞESİVDİN S. B., ACAR S., KASAP M.
13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Kasım 2006, ss.104, (Özet Bildiri)

48. QMSA Analysis and Effects of Extreme Space-Charge Scattering on the Mobility in III-V Systems grown by MBE

LİŞESİVDİN S. B., ACAR S., KASAP M., ÖZÇELİK S.
Turkish Physical Society 23th International Physics Congress, Muğla, Türkiye, 13 - 16 Eylül 2005, ss.1214, (Özet Bildiri)

49. Galvanomagnetic measurements of LEC grown Te-doped InSb

LİŞESİVDİN S. B., Yurdugul U., DEMİREZEN S., ACAR S., KASAP M.
11. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Aralık 2004, ss.79, (Özet Bildiri)

50. Temperature depence of magnetotransport and electrotransport properties of LEC grown S-doped InAs

KARA İ., LİŞESİVDİN S. B., ACAR S., KASAP M.
11. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Aralık 2004, ss.67, (Özet Bildiri)
Metrikler

Yayın

109

Yayın (WoS)

63

Yayın (Scopus)

60

Atıf (WoS)

1054

H-İndeks (WoS)

18

Atıf (Scopus)

1025

H-İndeks (Scopus)

17

Atıf (Scholar)

559

H-İndeks (Scholar)

14

Atıf (Diğer Toplam)

1

Proje

8

Tez Danışmanlığı

19

Açık Erişim

32
BM Sürdürülebilir Kalkınma Amaçları