Yayınlar & Eserler

Yayın Ağı
SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Temperature dependent electron transport properties of degenerate SnO2 thin films

Boyali E., Baran V., ASAR T., Ozcelik S., Kasap M.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.692, ss.119-123, 2017 (SCI-Expanded) identifier identifier

Evaluation of morphological and chemical differences of gunshot residues in different ammunitions using SEM/EDS technique

Kara I., Sarikavak Y., LİŞESİVDİN S. B., KASAP M.
ENVIRONMENTAL FORENSICS , cilt.17, sa.1, ss.68-79, 2016 (SCI-Expanded) identifier identifier

The Relationship Between the Surface Morphology and Chemical Composition of Gunshot Residue Particles

Kara I., LİŞESİVDİN S. B., Kasap M., Er E., Uzek U.
JOURNAL OF FORENSIC SCIENCES , cilt.60, sa.4, ss.1030-1033, 2015 (SCI-Expanded) identifier identifier identifier

Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

Atmaca G., Narin P., Lisesivdin S. B., Kasap M., Sarikavak-Lisesivdin B.
PHILOSOPHICAL MAGAZINE , cilt.95, sa.1, ss.79-89, 2015 (SCI-Expanded) identifier identifier

Analysis Of The Number Of Shots Using Graphite Furnace Atomic AbsorptionSpectrometry On The Gunshot Residues Deposited in The Barrel

KARA İ., YALÇINKAYA Ö., LİSESİVDİN S. B., KASAP M.
SYLWAN , cilt.159, sa.1, ss.14-26, 2015 (SCI-Expanded)

Study on growth and characterizations of GaxIn1-xP/GaAs solar cell structure

Kınacı B., Özen Y., Asar T., Cetin S. Ş., Memmedli T., Kasap M., et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.24, sa.9, ss.3269-3274, 2013 (SCI-Expanded) identifier identifier

Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

Kelekci O., Tasli P., Cetin S. Ş., Kasap M., Ozcelik S., Ozbay E.
CURRENT APPLIED PHYSICS , cilt.12, sa.6, ss.1600-1605, 2012 (SCI-Expanded) Creative Commons License identifier identifier

Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD

Kelekci O., Tasli P. T., Yu H., KASAP M., ÖZÇELİK S., ÖZBAY E.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.209, sa.3, ss.434-438, 2012 (SCI-Expanded) Creative Commons License identifier identifier

Epitaxial growth and electrical characterization of germanium

Bosi M., Attolini G., Ferrari C., Frigeri C., Calicchio M., Gombia E., et al.
CRYSTAL RESEARCH AND TECHNOLOGY , cilt.46, sa.8, ss.813-817, 2011 (SCI-Expanded) Creative Commons License identifier identifier

Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition

Yildiz A., Tasli P., Sarikavak B., Lisesivdin S. B., Ozturk M. K., Kasap M., et al.
SEMICONDUCTORS , cilt.45, sa.1, ss.33-36, 2011 (SCI-Expanded) Creative Commons License identifier identifier

Electron-Electron Interactions in Sb-Doped SnO2 Thin Films

Serin T., Yildiz A., SERİN N., Yildirim N., Ozyurt F., KASAP M.
JOURNAL OF ELECTRONIC MATERIALS , cilt.39, sa.8, ss.1152-1158, 2010 (SCI-Expanded) identifier identifier

The substrate temperature dependent electrical properties of titanium dioxide thin films

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.21, sa.7, ss.692-697, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier

LİŞESİVDİN S. B., Tasli P., Kasap M., Ozturk M., Arslan E., Ozcelik S., et al.
THIN SOLID FILMS , cilt.518, sa.19, ss.5572-5575, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method

Lişesivdin S. B., Yildiz A., Balkan N., Kasap M., Ozcelik S., Ozbay E.
JOURNAL OF APPLIED PHYSICS , cilt.108, sa.1, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers

Yildiz A., LİŞESİVDİN S. B., Tasli P., Ozbay E., Kasap M.
CURRENT APPLIED PHYSICS , cilt.10, sa.3, ss.838-841, 2010 (SCI-Expanded) Creative Commons License identifier identifier

The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE

Yildiz A., Kasap M.
LOW TEMPERATURE PHYSICS , cilt.36, sa.4, ss.320-324, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures

Bengi A., LİŞESİVDİN S. B., Kasap M., Mammadov T., Ozcelik S., Ozbay E.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.13, sa.2, ss.105-108, 2010 (SCI-Expanded) Creative Commons License identifier identifier

The thickness effect on the electrical conduction mechanism in titanium oxide thin films

Yildiz A., Serin N., Kasap M., Serin T., Mardare D.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.493, ss.227-232, 2010 (SCI-Expanded) identifier identifier

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

Yildiz A., LİŞESİVDİN S. B., Kasap M., Ozcelik S., Ozbay E., Balkan N.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.98, sa.3, ss.557-563, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Tasli P., LİŞESİVDİN S. B., Yildiz A., Kasap M., Arslan E., Ozcelik S., et al.
CRYSTAL RESEARCH AND TECHNOLOGY , cilt.45, sa.2, ss.133-139, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN

Tasli P., Yildiz A., Kasap M., Ozbay E., LİŞESİVDİN S. B., Ozcelik S.
PHILOSOPHICAL MAGAZINE , cilt.90, sa.26, ss.3591-3599, 2010 (SCI-Expanded) identifier identifier

Electrical conduction properties of Si delta-doped GaAs grown by MBE

Yildiz A., LİŞESİVDİN S. B., Altuntas H., Kasap M., Ozcelik S.
PHYSICA B-CONDENSED MATTER , cilt.404, sa.21, ss.4202-4206, 2009 (SCI-Expanded) Creative Commons License identifier identifier

Crossover from Nearest-Neighbor Hopping Conduction to Efros-Shklovskii Variable-Range Hopping Conduction in Hydrogenated Amorphous Silicon Films

Yildiz A., SERİN N., Serin T., KASAP M.
JAPANESE JOURNAL OF APPLIED PHYSICS , cilt.48, sa.11, 2009 (SCI-Expanded) identifier identifier

The effect of intrinsic defects on the hole transport in Cu2O

Yildiz A., Serin N., Serin T., Kasap M.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.3, sa.10, ss.1034-1037, 2009 (SCI-Expanded) identifier

Structural, electrical and optical characterization of InGaN layers grown by MOVPE

Yildiz A., Kemal O. M., Bosi M., Ozcelik S., Kasap M.
CHINESE PHYSICS B , cilt.18, sa.9, ss.4007-4012, 2009 (SCI-Expanded) identifier identifier

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

LİŞESİVDİN S. B., Altuntas H., Yildiz A., Kasap M., Ozbay E., Ozcelik S.
SUPERLATTICES AND MICROSTRUCTURES , cilt.45, sa.6, ss.604-611, 2009 (SCI-Expanded) Creative Commons License identifier identifier

Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)

Atmaca G., Elibol K., LİŞESİVDİN S. B., Kasap M., Ozbay E.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.11, sa.5, ss.578-582, 2009 (SCI-Expanded) identifier

Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

LİŞESİVDİN S. B., Balkan N., Makarovsky O., Patane A., Yildiz A., Caliskan M. D., et al.
JOURNAL OF APPLIED PHYSICS , cilt.105, sa.9, 2009 (SCI-Expanded) Creative Commons License identifier identifier

Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.
PHYSICA B-CONDENSED MATTER , cilt.404, ss.1423-1426, 2009 (SCI-Expanded) identifier identifier

Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

Yildiz A., LİŞESİVDİN S. B., Kasap M., Bosi M.
SOLID STATE COMMUNICATIONS , cilt.149, ss.337-340, 2009 (SCI-Expanded) identifier identifier

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

TÜLEK R., ILGAZ A., GÖKDEN S., TEKE A., Ozturk M. K., KASAP M., et al.
JOURNAL OF APPLIED PHYSICS , cilt.105, sa.1, 2009 (SCI-Expanded) Creative Commons License identifier identifier

Electrical properties of TiO(2) thin films

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.
JOURNAL OF NON-CRYSTALLINE SOLIDS , cilt.354, ss.4944-4947, 2008 (SCI-Expanded) identifier identifier

Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements

LİŞESİVDİN S. B., Demirezen S., Caliskan M. D., Yildiz A., Kasap M., Ozcelik S., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.23, sa.9, 2008 (SCI-Expanded) Creative Commons License identifier identifier

The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates

Arslan E., Butun S., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.
JOURNAL OF APPLIED PHYSICS , cilt.103, sa.10, 2008 (SCI-Expanded) Creative Commons License identifier identifier

Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy

Yildiz A., Dagdelen F., ACAR S., LİŞESİVDİN S. B., Kasap M., AYDOĞDU Y., et al.
ACTA PHYSICA POLONICA A , cilt.113, sa.2, ss.731-739, 2008 (SCI-Expanded) identifier identifier

Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

ACAR S., LİŞESİVDİN S. B., Kasap M., Oezcelik S., Oezbay E.
THIN SOLID FILMS , cilt.516, sa.8, ss.2041-2044, 2008 (SCI-Expanded) Creative Commons License identifier identifier

Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements

LİŞESİVDİN S. B., Arslan E., Kasap M., Ozcelik S., Ozbay E.
JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.20, sa.4, 2008 (SCI-Expanded) Creative Commons License identifier identifier

The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures

LİŞESİVDİN S. B., Yildiz A., ACAR S., Kasap M., Oezcelik S., Oezbay E.
PHYSICA B-CONDENSED MATTER , cilt.399, sa.2, ss.132-137, 2007 (SCI-Expanded) Creative Commons License identifier identifier

Electron transport in Ga-rich InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M., Bosi M.
CHINESE PHYSICS LETTERS , cilt.24, sa.10, ss.2930-2933, 2007 (SCI-Expanded) identifier identifier

Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis

LİŞESİVDİN S. B., Yildiz A., ACAR S., Kasap M., Ozcelik S., Ozbay E.
APPLIED PHYSICS LETTERS , cilt.91, sa.10, 2007 (SCI-Expanded) Creative Commons License identifier identifier

Temperature-dependent electron transport in In0.5Ga0.5P/GaAs grown by MOVPE

ACAR S., Yildiz A., Kasap M., Bosi M.
CHINESE PHYSICS LETTERS , cilt.24, sa.8, ss.2373-2375, 2007 (SCI-Expanded) identifier identifier

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

LİŞESİVDİN S. B., ACAR S., Kasap M., Ozcelik S., Gokden S., Ozbay E.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.22, sa.5, ss.543-548, 2007 (SCI-Expanded) Creative Commons License identifier identifier

High temperature variable-range hopping conductivity in undoped TiO2 thin film

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.1, sa.10, ss.531-533, 2007 (SCI-Expanded) identifier

Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors

LİŞESİVDİN S. B., Yildiz A., Kasap M.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.1, sa.9, ss.467-470, 2007 (SCI-Expanded) identifier

Quantitative mobility spectrum analysis for determination of electron and magneto transport properties of Te-doped GaSb

ACAR S., Kasap M., Isik B., Ozcelik S., Tugluoglu N., Karadeniz S.
Chinese Physics Letters , cilt.22, sa.9, ss.2363-2366, 2005 (SCI-Expanded) identifier identifier

Temperature-dependent galvanomagnetic measurements on doped InSb and InAs grown by liquid encapsulated czochralski

Kasap M., ACAR S., Ozcelik S., Karadeniz S., Tugluoglu N.
Chinese Physics Letters , cilt.22, sa.5, ss.1218-1221, 2005 (SCI-Expanded) identifier identifier

The temperature dependence of electron and magneto transport properties in Te-doped InSb

Kasap M., ACAR S.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.201, sa.14, ss.3113-3120, 2004 (SCI-Expanded) identifier identifier

Temperature-dependent barrier characteristics of inhomogeneous in/p-Si (100) Schottky barrier diodes

Tugluoglu N., Karadeniz S., ACAR S., Kasap M.
CHINESE PHYSICS LETTERS , cilt.21, sa.9, ss.1795-1798, 2004 (SCI-Expanded) identifier identifier

Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes

ACAR S., Karadeniz S., Tugluoglu N., Selcuk A., Kasap M.
APPLIED SURFACE SCIENCE , cilt.233, ss.373-381, 2004 (SCI-Expanded) identifier identifier

Conductivity, Hall and magnetoresistance effect measurements on SIGaAs and InP

ACAR S., Kasap M.
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , cilt.201, sa.7, ss.1551-1557, 2004 (SCI-Expanded) identifier identifier

Prebreakdown current behaviour in the ionization cell with a semiconductor cathode

Salamov B., Kasap M., Lebedeva N.
JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.33, sa.17, ss.2192-2195, 2000 (SCI-Expanded) identifier identifier

The simulation of the two-dimensional Ising model in the presence of an external magnetic field on the Creutz cellular automaton

Kutlu B., Kasap M., Turan S.
INTERNATIONAL JOURNAL OF MODERN PHYSICS C , cilt.11, sa.3, ss.561-572, 2000 (SCI-Expanded) identifier identifier

The concentration of currents on the artificial surface inhomogeneities of semiconducting cathodes in ionization cells

Salamov B., Ozer M., Kasap M., Altindal Ş.
JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.32, sa.6, ss.682-687, 1999 (SCI-Expanded) identifier identifier

The temperature and pressure dependence of electron transport in plastically relaxed InxGa1-xAs

Kasap M., Lancefield D.
PHYSICA STATUS SOLIDI B-BASIC RESEARCH , cilt.199, sa.2, ss.481-493, 1997 (SCI-Expanded) identifier identifier

The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films

Salamov B., Civi M., Altindal Ş., Kasap M., BULUR E.
JOURNAL OF INFORMATION RECORDING , cilt.23, sa.5, ss.437-445, 1997 (SCI-Expanded) identifier identifier

Impurity conduction in InxGa1-xAs

KASAP M., ÖZER M., Çolakoǧlu K.
Turkish Journal of Physics , cilt.20, sa.7, ss.740-746, 1996 (SCI-Expanded) identifier
Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Determination of Structural and Electrical Properties of ZnO Thin Films Grown By Mist-Cvd Method on Sapphire with Different Orientations

Yayla M., LİŞESİVDİN S. B., KASAP M.
Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.236

The Study on Antimony Diffusion in Gallium-Doped Germanium Grown by Chochralski Technique

Baran V., Çat Y., Akın Sönmez N., Özen Y., Kasap M., Özçelik S.
Turkish Physical Society 33th International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017

The Study on Antimony Diffusion in Gallium-doped Germanium Grown by Czochralski Technique

Baran V., Çat Y., Akın Sönmez N., Özen Y., Kasap M., Özçelik S.
Turkish Physical Society 33th International Physics Congress (TFD33), Muğla, Türkiye, 6 - 10 Eylül 2017

Pt Metal Kümelerin Katkısız SnO2 Sensör Yapılarının Algılama Özelliklerine Etkisi

Boyalı E., Korkmaz B., Sertel T., Efkere H. İ., Özen Y., Çetin S. Ş., et al.
22. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 16 Aralık 2016

Germanyum Kızıl Ötesi Optik Pencereler ve Elektromanyetik Girişim

Çat Y., Baran V., Kasap M., Özçelik S.
22. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 16 Aralık 2016

Sb Doping Effect on the Electrical Properties of Germanium Single Cyrstals

BARAN V., ÇAT Y., BOYALI E., ASAR T., KASAP M., ÖZÇELİK S.
2nd International Congres on The World of Technology and Advanced Materials (WITAM2016), Kırşehir, Türkiye, 28 Eylül - 02 Ekim 2016

Sb Katkılı Hacimli Germanyum Tek Kristal Büyütülmesi ve Karakterizasyonu

Baran V., Çat Y., Asar T., Çetin S. Ş., Kasap M., Özçelik S.
21. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 25 Aralık 2015

Electrical, Optical And Structural Properties of SnO2 Thin Films

BOYALI E., BAŞKÖSE Ü. C., ASAR T., KASAP M., ÖZÇELİK S.
9th International Physics Conference of the Balkan Physical Union – BPU9, İstanbul, Türkiye, 24 - 27 Ağustos 2015

Antimon (Sb) Katkılı Germanyum (Ge) Hacimli Tek-Kristalinin Büyütülmesi ve Elektriksel Karakterizasyonu

BARAN V., ÇAT Y., BOYALI E., ASAR T., KASAP M., ÖZÇELİK S.
20. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 26 Aralık 2014

Investigation of electrical properties of two dimensional hole gas in hybrid InGaN/ZnO heterotructure

Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN S. B., KASAP M.
Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.401

Temperature dependent hall effect studies on the InxGa1 xAs InP MSM infrared photodetectors

ASAR T., KASAP M., MEMMEDLİ T., ÖZÇELİK S.
XXIII International Scientific and Engineering Conference on Photoelectronics and Night Vision Devices, Moskva, Rusya, 28 - 30 Mayıs 2014

Katkısız Ge Tek-Kristal Yarıiletkenlerin Büyütülmesi ve Elektriksel Karakterizasyonları

BARAN V., BOYALI E., ÇAT Y., KASAP M., ÖZÇELİK S.
19. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 20 Aralık 2013

Properties of GaAs/Ge growth by metal organic chemical vapor deposition

ÇETİN S. Ş., BOSI M., KASAP M., ÖZÇELİK S.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013

The Investigation of Temperature Dependent Electrical Transport Properties of InxGa1-xP/GaAs

BOYALI E., NARİN P., ATMACA G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013

Scattering Analysis of 2DEG in AlInN/GaN Based Heterostructures With GaN and InGaN Quantum Wells

NARİN P., ATMACA G., BOYALI E., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013

A Numerical Investigation on Electronic Properties of Two Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

NARİN P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B., KASAP M.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013, ss.529

Structural and optical properties of double junction InGaP/GaAs solar cell

ÇETİN S. Ş., KINACI B., ÖZEN Y., BOSI M., ASAR T., KASAP M., et al.
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013

The structural and morphological characterizations of GaAs/Ge structure

KINACI B., AKIN SÖNMEZ N., KIZILKAYA K., ÖZEN Y., ASAR T., ÇETİN S. Ş., et al.
NanoTR-9, Erzurum, Türkiye, 24 - 28 Haziran 2013

InAlN/GaN Temelli Yuksek Elektron Mobiliteli Transistörlerin (HEMT) Elektron ve Magneto Iletim Ozellikleri

TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.
ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.65

InGaN arka bariyerli AlxGa1-xN/AlN/GaN HEMT yapılarındaki ince filmlerin alaşım oranları ve kalınlıklarının nümerik optimizasyonu

Kelekçi Ö., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.17

Grafen Flake Üretim Yöntemlerinin Geliştirilmesi

Elibol K., Kelekçi Ö., Atmaca G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., et al.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.2

GaN Tabanlı MESFET Yapıların 2-boyutta Elektriksel Karakteristikleri

Elibol K., Atmaca G., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.34

Eklem Alan Etkili Transistörlerin Elektriksel Karakteristiklerinin İncelenmesi

Atmaca G., Elibol K., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.12

GaAs Tabanlı Bir MOSFET Yapının 2-Boyutta Akım – Gerilim Karakteristiklerinin İncelenmesi

Kuloğlu A. F., LİŞESİVDİN S. B., KASAP M.
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.88

InGaAs Yarıiletkenin Elektriksel İletkenlik Özellikleri

Kayhan B., Yıldız A., Altuntaş H., Kasap M., Özçelik S.
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Kasım 2009, ss.64

MBE Tekniği ile büyütülen AlGaAs/GaAs Lazer Diyot Yapısının Yapısal, Optik ve Elektriksel Özelliklerinin İncelenmesi

ÖZÇELİK S., ÇETİN S. Ş., KASAP M., MAMMADOV T.
11. Ulusal Optik, Elektro-Optik ve Fotonik Toplantısı, Türkiye, 16 Ekim 2009

Cift kanalli AlGaAs/InGaAs/GaAs tabanli p-HEMT Yapilarinda 1 ve 2-boyutta Schrödinger-Poisson Cozumleri ve Akim-Gerilim Incelemeleri

Atmaca G., Elibol K., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.59

Sicakliga ve manyetik alana bagli Hall olcumlerinin analizi ile DX-merkezi aktivasyon enerjisi hesabi

LİŞESİVDİN S. B., ALTUNTAŞ H., YILDIZ A., KASAP M., ÖZBAY E., ÖZÇELİK S.
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.9

A Numerical Study on Subband Structure of AlxIn1-xN/GaN-based HEMT Structures with Low-Indium (x&gt;0.82) Barrier Layer

TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M., Elibol K., Atmaca G., ÖZBAY E.
Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.509

Determination of Two-Dimensional Electron and Hole Gas Carriers in Al0.88In0.12N/GaN-based Heterostructures Grown by Metal Organic Chemical Vapor Deposition

TUNAY TAŞLI P., LİŞESİVDİN S. B., YILDIZ A., KASAP M., ÖZBAY E.
Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.510

Optimization of Al-mole Fraction and Layer Thicknesses in AlxGa1-xN/AlN/GaN/AlxGa1-xN/AlN/GaN Double Channel HEMT Structure

Elibol K., Atmaca G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.
Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.454

Small Polaron Transport In Titanium Dioxide Thin Film

YILDIZ A., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., Mardare D.
Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.133

Investigation of the Beating Pattern of Shubnikov-De Haas Oscillations and Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures

LİŞESİVDİN S. B., Balkan N., Makarovsky O., Patane A., YILDIZ A., Çalışkan M. D., et al.
Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.484

On the conduction mechanism of TiO2

YILDIZ A., Eker S., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., Mardare D.
8th International Conference on Physics of Advanced Materials, Iasi, Romanya, 4 - 07 Haziran 2008, ss.28

Stokes shift in In0.13Ga0.87N epitaxial layer grown by MOVPE

YILDIZ A., ALTUNTAŞ H., LİŞESİVDİN S. B., Bengi A., KASAP M.
Turkish Physical Society 24th International Physics Congress, Malatya, Türkiye, 28 - 31 Ağustos 2007, ss.152

Simulation of the interfacial AlN layer on band structures and carrier densities of AlGaN/GaN HEMT structures

Liceşivdin S., KASAP M.
6TH International Conference of the Balkan Physical Union, İstanbul, Türkiye, 22 Ağustos 2006 - 26 Ağustos 2007, cilt.899, ss.622 identifier

Electrical Conductivity Behaviour in Anatase Phase TiO2

YILDIZ A., LİŞESİVDİN S. B., ACAR S., KASAP M., Mardare D.
NanoTr3 Conference Proceedings, Ankara, Türkiye, 11 - 14 Haziran 2007, ss.151

Improved Scattering Analysis of 2DEG carriers in Al0.25Ga0.75N/GaN Heterostructures

LİŞESİVDİN S. B., YILDIZ A., ACAR S., KASAP M., ÖZÇELİK S., GÖKDEN S., et al.
NanoTr3 Conference Proceedings, Ankara, Türkiye, 11 - 14 Haziran 2007, ss.134

Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE

YILDIZ A., ÖZTÜRK M. A., KASAP M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.672 identifier identifier

Mole fraction dependence of mobility in InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.670 identifier identifier

Activation mechanism in InGaN grown by MOVPE

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.671 identifier identifier

Strain calculations from hall measurements in undoped Al0.25Ga0.75N/GaN HEMT structures

LİŞESİVDİN S. B., Yildiz A., Kasap M., Oezbay E.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.623 identifier

Variable-range hopping conductivity in InGaN

Yildiz A., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.293-294 identifier identifier

Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE

Yildiz A., Ozturk M. K., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.295-296 identifier identifier

Simulation of the interfacial AIN layer on band structures and carrier densities of AlGaN/GaN HEMT structures

LİŞESİVDİN S. B., Kasap M.
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.622 identifier

Two dimensional hole gas (2DHG) formation evidence in AlGaN/GaN/AlN HEMTs

ACAR S., LİŞESİVDİN S. B., KASAP M.
13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Kasım 2006, ss.105

Transport properties of the 2DEG and minority carriers in AlGaN/GaN HEMT Structures grown by MOCVD

LİŞESİVDİN S. B., ACAR S., KASAP M.
13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Kasım 2006, ss.104

QMSA Analysis and Effects of Extreme Space-Charge Scattering on the Mobility in III-V Systems grown by MBE

LİŞESİVDİN S. B., ACAR S., KASAP M., ÖZÇELİK S.
Turkish Physical Society 23th International Physics Congress, Muğla, Türkiye, 13 - 16 Eylül 2005, ss.1214

Galvanomagnetic measurements of LEC grown Te-doped InSb

LİŞESİVDİN S. B., Yurdugul U., DEMİREZEN S., ACAR S., KASAP M.
11. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Aralık 2004, ss.79

Temperature depence of magnetotransport and electrotransport properties of LEC grown S-doped InAs

KARA İ., LİŞESİVDİN S. B., ACAR S., KASAP M.
11. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Aralık 2004, ss.67
Metrikler

Yayın

109

Atıf (WoS)

1009

H-İndeks (WoS)

17

Atıf (Scopus)

969

H-İndeks (Scopus)

17

Atıf (Scholar)

559

H-İndeks (Scholar)

14

Atıf (Diğer Toplam)

1

Proje

8

Tez Danışmanlığı

19

Açık Erişim

32
BM Sürdürülebilir Kalkınma Amaçları