Journal articles indexed in SCI, SSCI, and AHCI
147
32. Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.32, no.12, pp.15732-15739, 2021 (SCI-Expanded)
33. Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.32, no.9, pp.11418-11425, 2021 (SCI-Expanded)
34. A Compare Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer
JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS
, vol.31, no.4, pp.1668-1675, 2021 (SCI-Expanded)
35. Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.32, no.6, pp.7657-7670, 2021 (SCI-Expanded)
37. Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.32, no.3, pp.3451-3459, 2021 (SCI-Expanded)
39. Ionizing radiation effects on Au/TiO2/n-Si metal-insulator-semiconductor (MIS) structure
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.31, no.22, pp.19846-19851, 2020 (SCI-Expanded)
41. Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes
Journal of Materials Science: Materials in Electronics
, vol.31, no.14, pp.11665-11672, 2020 (SCI-Expanded)
42. Electrical properties of Graphene/Silicon structure with Al2O3 interlayer
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.31, no.12, pp.9719-9725, 2020 (SCI-Expanded)
43. Electrical characterization of silicon nitride interlayer-based MIS diode
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.31, no.12, pp.9888-9893, 2020 (SCI-Expanded)
52. A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.30, no.13, pp.12122-12129, 2019 (SCI-Expanded)
59. Forward and reverse bias current-voltage (I-V) characteristics in the metal-ferroelectric-semiconductor (Au/SrTiO3/n-Si) structures at room temperature
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.29, no.19, pp.16740-16746, 2018 (SCI-Expanded)
62. Electronic and optoelectronic properties of Al/coumarin doped Pr2Se3-Tl2Se/p-Si devices
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.29, no.15, pp.12561-12572, 2018 (SCI-Expanded)
63. Analysis of interface states in Au/ZnO/p-InP (MOS) structure
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, vol.29, no.15, pp.12553-12560, 2018 (SCI-Expanded)
66. Electrical and impedance properties of MPS structure based on (Cu2O–CuO–PVA) interfacial layer
Journal of Materials Science: Materials in Electronics
, vol.29, no.10, pp.8234-8243, 2018 (SCI-Expanded)
111. gamma-ray irradiation effects on dielectric properties of Au/SiO2/n-Si (MIS) structures
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, vol.5, pp.443-447, 2011 (SCI-Expanded)
112. Temperature and frequency dependent dielectric properties of Au/Bi4Ti3O12/SiO2/Si (MFIS) structures
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, vol.12, no.10, pp.2139-2144, 2010 (SCI-Expanded)
114. The effects of series resistance on the forward bias I-V characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, vol.4, no.5, pp.616-619, 2010 (SCI-Expanded)
116. Temperature and frequency dependent dielectric properties of Au/Bi 4Ti3O12/SiO2/Si (MFIS) structures
Journal of Optoelectronics and Advanced Materials
, vol.12, no.10, pp.2139-2143, 2010 (SCI-Expanded)
140. Electrical characteristics of Co-60 gamma-ray irradiated MIS Schottky diodes
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, vol.252, no.2, pp.257-262, 2006 (SCI-Expanded)
Articles Published in Other Journals
10
1. Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device
Gazi University Journal of Science Part A: Engineering and Innovation
, vol.10, no.1, pp.89-96, 2023 (Peer-Reviewed Journal)
3. Metal Oksit Yarıiletken MOS Kapasitörün DielektrikParametrelerinin Frekans ve Sıcaklık Bağımlılığı
Gazi Üniversitesi Fen Bilimleri Dergisi Part: C Tasarım ve Teknoloji
, vol.4, no.2, pp.65-70, 2016 (Peer-Reviewed Journal)
4. Ulusal Veritabanı ve Atıf İndeksi Kurulumu için Stratejiler, Problemler ve Çözüm Önerileri
Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji
, vol.3, no.2, pp.501-512, 2015 (Peer-Reviewed Journal)
5. Ulusal Veritabanı ve Atıf indeksi Kurulumu için Stratejiler Problemler ve Çözüm Önerileri
Gazi Üniversitesi Fen Bilimleri Dergisi Part:C Tasarım ve Teknoloji
, vol.3, no.2, pp.501-512, 2015 (Peer-Reviewed Journal)
9. Temperature Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures
Journal of Optoelectronics and Advanced Materials - Symposia
, vol.1, no.3, pp.266-269, 2009 (Peer-Reviewed Journal)
Papers Presented at Peer-Reviewed Scientific Conferences
18
3. Electrical Properties of MOS Capacitor with TiO2/SiO2 Multilayer Oxide Film
5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG-2018), Nevşehir, Turkey, 4 - 06 October 2018, (Summary Text)
4. Radiation effects on admittance measurements of MIS capacitor
5th Internatıonal conference on materials science and advanced-nanotechnologies for next generation (MSNG2018), 4 - 06 October 2018, (Full Text)
5. Frequency dependence of dielectric properties of Al/N-T Nft/p-Si/Al Structure
INTERNATIONAL CONGRESS ON THE WORLD OF TECHNOLOGY AND ADVANCED MATERIALS, 21 - 23 September 2018, (Summary Text)
6. Dielectric Properties of MOS Device Based on TiO2/SiO2 Oxide Layer
Seventh Bozok Science Workshop: Boron and Boron Containing Nanomaterials with Applications, Yozgat, Turkey, 8 - 10 August 2018, (Summary Text)
7. Electrical Properties of Dilute Nitride GaAsPN/GaPN MQW p-i-n Diode
Turkish Physical Society 33th International Physics Congress, Muğla, Turkey, 6 - 10 September 2017, (Summary Text)
8. Effect of Thickness on the optical, structural and electrical properties of ZnO Thin Film Deposited on n-type Si
4th International Conference on Materials Science and Nanotecnology for next generation, 28 - 30 June 2017, (Summary Text)
9. The Effect of Thickness on the Optical, Structural and Electrical Properties of ZnO Thin Film Deposited on n-type Si
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 June 2017, (Summary Text)
10. Temperature dependence of current voltage characteristics of AuGe n Ge AuGe Schottky diode
3st International Nanoscience&Nanotechnology For Next Generation (NANONG2016), 20 - 22 October 2016, (Summary Text)
11. Frequency Dependent Dielectric Propertes of Heterogeneous Structure
Turkish Phsical Society 32 nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016, (Full Text)
12. Frequency Dependent Dielectric Properties of Heterogeneous Structures
Turkish Physical Society 32nd International Physics Congress, 6 - 09 September 2016, (Summary Text)
13. Frequency dependent dielectric properties and ac conductivity of Bi3 25La0 75Ti3O12 thin film prepared by sol gel method
2nd International Nanoscience and Nanotechnolgy for Next Generation (NaNoNG) 2015 Conference, ANTALYA/Kemer, Turkey, 29 - 31 October 2015, (Summary Text)
14. Metal Oksit Yarıiletken MOS Kapasitörün Dielektrik Karakteristiklerine Sıcaklık Etkisi
20. Yoğun Madde Fiziği Ankara Toplantısı, Hacettepe Üniversitesi, Ankara, Turkey, 26 December 2014, (Summary Text)
15. Metal yalıtkan yarıiletken MIS kapasitörün akım gerilim karakteristikleri üzerine gama radyasyon etkileri
21. Yoğun Madde Fiziği Ankara Toplantısı, Gazi Üniversitesi, Ankara, Turkey, 25 December 2015, (Summary Text)
16. Dielectric Characteristics of Gamma Irradiated MOS Capacitor
1st International Semiconductor Science and Technology (ISSTC) Conference 2014, İstanbul, Turkey, 13 - 15 January 2014, (Summary Text)
17. Frequency Dependent Electrical Characteristics of Ni Au AlGaN AlN GaN Heterostructures
7th BPU General Conference, Alexandroupolis, Greece, 9-13 Sept 2009., Greece, 9 - 13 September 2009, (Summary Text)
18. InGaAs/GaAs Çoklu Kuantum Kuyulu Dedektör Yapısının Moleküler Demet Yöntemi ile Büyütülmesi ve Karakterizasyonu
14. Yoğun Madde Fiziği Kongresi, Turkey, 02 November 2007, (Summary Text)