Makaleler
161
Tümü (161)
SCI-E, SSCI, AHCI (151)
SCI-E, SSCI, AHCI, ESCI (152)
ESCI (1)
Scopus (154)
TRDizin (7)
Diğer Yayınlar (1)
9. Analysis of the structural and optical characteristics of ZnSe thin flms as interface layer
JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
, cilt.36, sa.168, ss.1-12, 2025 (SCI-Expanded, Scopus)
12. Structural, morphological, optical and electrical characterization of MgO thin films grown by sputtering technique on different substrates
JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
, cilt.35, ss.1-10, 2024 (SCI-Expanded, Scopus)
21. The structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.30, 2023 (SCI-Expanded, Scopus)
26. Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.12, 2023 (SCI-Expanded, Scopus)
27. Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device
Gazi University Journal of Science Part A: Engineering and Innovation
, cilt.10, sa.1, ss.89-96, 2023 (TRDizin)
32. Hydrothermal Synthesis of ZnO-Doped Poly-2-(4-Fluorophenyl)-2-Oxoethyl-2-Methylprop-2-Enoate Nanocomposites for Electronic Devices
JOURNAL OF MACROMOLECULAR SCIENCE PART B-PHYSICS
, cilt.61, sa.7-8, ss.958-970, 2022 (SCI-Expanded, Scopus)
37. Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.12, ss.15732-15739, 2021 (SCI-Expanded, Scopus)
38. Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.9, ss.11418-11425, 2021 (SCI-Expanded, Scopus)
39. A Compare Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer
JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS
, cilt.31, sa.4, ss.1668-1675, 2021 (SCI-Expanded, Scopus)
40. Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.6, ss.7657-7670, 2021 (SCI-Expanded, Scopus)
41. Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.3, ss.3451-3459, 2021 (SCI-Expanded, Scopus)
45. Ionizing radiation effects on Au/TiO2/n-Si metal-insulator-semiconductor (MIS) structure
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.22, ss.19846-19851, 2020 (SCI-Expanded, Scopus)
47. Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes
Journal of Materials Science: Materials in Electronics
, cilt.31, sa.14, ss.11665-11672, 2020 (SCI-Expanded, Scopus)
48. Electrical characterization of silicon nitride interlayer-based MIS diode
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.12, ss.9888-9893, 2020 (SCI-Expanded, Scopus)
49. Electrical properties of Graphene/Silicon structure with Al2O3 interlayer
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.12, ss.9719-9725, 2020 (SCI-Expanded, Scopus)
50. Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, sa.5-6, ss.256-260, 2020 (SCI-Expanded, Scopus)
58. A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.13, ss.12122-12129, 2019 (SCI-Expanded, Scopus)
60. Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure
Journal of Materials Science: Materials in Electronics
, cilt.30, sa.10, ss.9572-9581, 2019 (SCI-Expanded, Scopus)
62. Dielectric, modulus and conductivity studies of Au/PVP/n-Si (MPS) structure in the wide range of frequency and voltage at room temperature
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.7, ss.6853-6859, 2019 (SCI-Expanded, Scopus)
65. Forward and reverse bias current-voltage (I-V) characteristics in the metal-ferroelectric-semiconductor (Au/SrTiO3/n-Si) structures at room temperature
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.29, sa.19, ss.16740-16746, 2018 (SCI-Expanded, Scopus)
69. Analysis of interface states in Au/ZnO/p-InP (MOS) structure
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.29, sa.15, ss.12553-12560, 2018 (SCI-Expanded, Scopus)
70. Electronic and optoelectronic properties of Al/coumarin doped Pr2Se3-Tl2Se/p-Si devices
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.29, sa.15, ss.12561-12572, 2018 (SCI-Expanded, Scopus)
71. Electrical and impedance properties of MPS structure based on (Cu2O–CuO–PVA) interfacial layer
Journal of Materials Science: Materials in Electronics
, cilt.29, sa.10, ss.8234-8243, 2018 (SCI-Expanded, Scopus)
77. On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics
Journal of Materials Science: Materials in Electronics
, cilt.29, sa.1, ss.159-170, 2018 (SCI-Expanded, Scopus)
80. Frequency dependence of dielectric parameters of structure with Bi3.25La0.75Ti3O12 thin film prepared by sol-gel method
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.19, ss.629-633, 2017 (SCI-Expanded, Scopus)
85. Radiation effects on dielectric properties of MIS structure with Si3N4 thin film prepared by r.f. magnetron sputtering
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.18, ss.798-802, 2016 (SCI-Expanded, Scopus)
94. Effects of Temperature on Dielectric Parameters of Metal-Oxide-Semiconductor Capacitor with Thermal Oxide Layer
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
, cilt.10, sa.5, ss.675-679, 2015 (SCI-Expanded, Scopus)
95. Ulusal Veritabanı ve Atıf İndeksi Kurulumu için Stratejiler, Problemler ve Çözüm Önerileri
Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji
, cilt.3, sa.2, ss.501-512, 2015 (TRDizin)
97. Dielectric, conductivity and modulus analysis of AuGe/SiO2/p-Si/AuGe capacitor
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.17, ss.1134-1138, 2015 (SCI-Expanded, Scopus)
99. Ulusal Veritabanı ve Atıf indeksi Kurulumu için Stratejiler Problemler ve Çözüm Önerileri
Gazi Üniversitesi Fen Bilimleri Dergisi Part:C Tasarım ve Teknoloji
, cilt.3, sa.2, ss.501-512, 2015 (TRDizin)
106. Analysis of Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor by Impedance Spectroscopy
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
, cilt.9, sa.4, ss.515-519, 2014 (SCI-Expanded, Scopus)
116. Investigation of the effects of gamma-ray irradiation on electrical characteristics of MOS capacitors
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.14, ss.304-308, 2012 (SCI-Expanded, Scopus)
118. Influence of frequency on electrical and dielectric properties of Au/Si3N4/n-Si (MIS) structures
Journal of Optoelectronics and Advanced Materials
, cilt.14, ss.640-645, 2012 (SCI-Expanded, Scopus)
121. Frequency and voltage dependence of the electrical and dielectric properties of Au/n-Si Schottky diodes with SiO2 insulator layer
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.13, ss.940-945, 2011 (SCI-Expanded, Scopus)
122. gamma-ray irradiation effects on dielectric properties of Au/SiO2/n-Si (MIS) structures
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.5, ss.443-447, 2011 (SCI-Expanded, Scopus)
123. The Gaussian distribution of barrier height in Au/n-GaAs Schottky diodes at high temperatures
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.5, ss.438-442, 2011 (SCI-Expanded, Scopus)
124. Temperature and frequency dependent dielectric properties of Au/Bi4Ti3O12/SiO2/Si (MFIS) structures
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.12, sa.10, ss.2139-2144, 2010 (SCI-Expanded, Scopus)
125. Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.12, sa.7, ss.1472-1478, 2010 (SCI-Expanded, Scopus)
126. The effects of series resistance on the forward bias I-V characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.4, sa.5, ss.616-619, 2010 (SCI-Expanded, Scopus)
128. Temperature and frequency dependent dielectric properties of Au/Bi 4Ti3O12/SiO2/Si (MFIS) structures
Journal of Optoelectronics and Advanced Materials
, cilt.12, sa.10, ss.2139-2143, 2010 (SCI-Expanded, Scopus)
133. Temperature Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures
Journal of Optoelectronics and Advanced Materials - Symposia
, cilt.1, sa.3, ss.266-269, 2009 (Hakemli Dergi)
145. Current Voltage I V and Capacitance Voltage C V Characteristics of Au Bi4Ti3O12 SnO2 Structures
Gazi University Journal of Science
, cilt.20, ss.97-102, 2007 (ESCI, Scopus, TRDizin)
146. Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
, cilt.264, sa.1, ss.73-78, 2007 (SCI-Expanded, Scopus)
148. Analysis of interface states and series resistance at MIS structure irradiated under Co-60 gamma-rays
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
, cilt.580, sa.3, ss.1588-1593, 2007 (SCI-Expanded, Scopus)
150. The effects of frequency and gamma-irradiation on the dielectric properties of MIS type Schottky diodes
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, cilt.254, sa.1, ss.113-117, 2007 (SCI-Expanded, Scopus)
151. Effects of beta-ray irradiation on the C-V and G/ω-V characteristics of Au/SiO2/n-Si (MOS) structures
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
, cilt.254, sa.2, ss.273-277, 2007 (SCI-Expanded, Scopus)
154. Electrical characteristics of Co-60 gamma-ray irradiated MIS Schottky diodes
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, cilt.252, sa.2, ss.257-262, 2006 (SCI-Expanded, Scopus)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
18
3. Electrical Properties of MOS Capacitor with TiO2/SiO2 Multilayer Oxide Film
5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG-2018), Nevşehir, Türkiye, 4 - 06 Ekim 2018, (Özet Bildiri)
4. Radiation effects on admittance measurements of MIS capacitor
5th Internatıonal conference on materials science and advanced-nanotechnologies for next generation (MSNG2018), 4 - 06 Ekim 2018, (Tam Metin Bildiri)
5. Frequency dependence of dielectric properties of Al/N-T Nft/p-Si/Al Structure
INTERNATIONAL CONGRESS ON THE WORLD OF TECHNOLOGY AND ADVANCED MATERIALS, 21 - 23 Eylül 2018, (Özet Bildiri)
6. Dielectric Properties of MOS Device Based on TiO2/SiO2 Oxide Layer
Seventh Bozok Science Workshop: Boron and Boron Containing Nanomaterials with Applications, Yozgat, Türkiye, 8 - 10 Ağustos 2018, (Özet Bildiri)
7. Electrical Properties of Dilute Nitride GaAsPN/GaPN MQW p-i-n Diode
Turkish Physical Society 33th International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, (Özet Bildiri)
8. Effect of Thickness on the optical, structural and electrical properties of ZnO Thin Film Deposited on n-type Si
4th International Conference on Materials Science and Nanotecnology for next generation, 28 - 30 Haziran 2017, (Özet Bildiri)
9. The Effect of Thickness on the Optical, Structural and Electrical Properties of ZnO Thin Film Deposited on n-type Si
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)
10. Temperature dependence of current voltage characteristics of AuGe n Ge AuGe Schottky diode
3st International Nanoscience&Nanotechnology For Next Generation (NANONG2016), 20 - 22 Ekim 2016, (Özet Bildiri)
11. Frequency Dependent Dielectric Propertes of Heterogeneous Structure
Turkish Phsical Society 32 nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016, (Tam Metin Bildiri)
12. Frequency Dependent Dielectric Properties of Heterogeneous Structures
Turkish Physical Society 32nd International Physics Congress, 6 - 09 Eylül 2016, (Özet Bildiri)
13. Frequency dependent dielectric properties and ac conductivity of Bi3 25La0 75Ti3O12 thin film prepared by sol gel method
2nd International Nanoscience and Nanotechnolgy for Next Generation (NaNoNG) 2015 Conference, ANTALYA/Kemer, Türkiye, 29 - 31 Ekim 2015, (Özet Bildiri)
14. Metal Oksit Yarıiletken MOS Kapasitörün Dielektrik Karakteristiklerine Sıcaklık Etkisi
20. Yoğun Madde Fiziği Ankara Toplantısı, Hacettepe Üniversitesi, Ankara, Türkiye, 26 Aralık 2014, (Özet Bildiri)
15. Metal yalıtkan yarıiletken MIS kapasitörün akım gerilim karakteristikleri üzerine gama radyasyon etkileri
21. Yoğun Madde Fiziği Ankara Toplantısı, Gazi Üniversitesi, Ankara, Türkiye, 25 Aralık 2015, (Özet Bildiri)
16. Dielectric Characteristics of Gamma Irradiated MOS Capacitor
1st International Semiconductor Science and Technology (ISSTC) Conference 2014, İstanbul, Türkiye, 13 - 15 Ocak 2014, (Özet Bildiri)
17. Frequency Dependent Electrical Characteristics of Ni Au AlGaN AlN GaN Heterostructures
7th BPU General Conference, Alexandroupolis, Greece, 9-13 Sept 2009., Yunanistan, 9 - 13 Eylül 2009, (Özet Bildiri)
18. InGaAs/GaAs Çoklu Kuantum Kuyulu Dedektör Yapısının Moleküler Demet Yöntemi ile Büyütülmesi ve Karakterizasyonu
14. Yoğun Madde Fiziği Kongresi, Türkiye, 02 Kasım 2007, (Özet Bildiri)