SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler
Investigation of spin-polarized electronic states of CBVN defects in h-BN monolayers
Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene
Morphological and optical characterizations of different ZnO nanostructures grown by mist-CVD
A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics
A novel hot carrier-induced blue light-emitting device
Growth dynamics of mist-CVD grown ZnO nanoplatelets
The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures
General-purpose open-source 1D self-consistent Schrodinger-Poisson Solver: Aestimo 1D
Ab initio study of electronic properties of armchair graphene nanoribbons passivated with heavy metal elements
Scattering analysis of ultrathin barrier (< 7nm) GaN-based heterostructures
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
, cilt.125, sa.4, 2019 (SCI-Expanded)



Electronic properties of zigzag ZnO nanoribbons with hydrogen and magnesium passivations
Electronic properties of graphene nanoribbons doped with zinc, cadmium, mercury atoms
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
, cilt.104, ss.124-129, 2018 (SCI-Expanded)



Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures
IEEE TRANSACTIONS ON ELECTRON DEVICES
, cilt.65, sa.3, ss.950-956, 2018 (SCI-Expanded)



High Figure-of-Merit(V-BR(2)/R-ON) AlGan/GAN Power HEMT With Periodically C-Doped GaN Buffer and AlGAN Back Barrier
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
, cilt.6, sa.1, ss.1179-1186, 2018 (SCI-Expanded)


Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms
Structural and optical properties of hexagonal ZnO nanostructures grown by ultrasonic sprayCVD
A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures
A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of beta-Si3N4 structure
Effect of substitutional As impurity on electrical and optical properties of beta-Si3N4 structure
Electronic properties of Li-doped zigzag graphene nanoribbons
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
, cilt.84, ss.543-547, 2016 (SCI-Expanded)



Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
, cilt.79, ss.67-71, 2016 (SCI-Expanded)


Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
Evaluation of morphological and chemical differences of gunshot residues in different ammunitions using SEM/EDS technique
The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
, cilt.252, sa.9, ss.1960-1965, 2015 (SCI-Expanded)


The Relationship Between the Surface Morphology and Chemical Composition of Gunshot Residue Particles
Energy Relaxation of Electrons in InGaN Quantum Wells
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
, sa.4, ss.1565-1569, 2015 (SCI-Expanded)



Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures
First-principles calculations of Pd-terminated symmetrical armchair graphene nanoribbons
The effect of InxGa1-xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures (0.05 <= x <= 0.14)
Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN
Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons
Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers
Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition
Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.207, sa.11, ss.2593-2596, 2010 (SCI-Expanded)



Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses
Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier
The substrate temperature dependent electrical properties of titanium dioxide thin films
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.21, sa.7, ss.692-697, 2010 (SCI-Expanded)



Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD
Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN
DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film
Electronic transport in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantum wells
Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N
Electrical properties of TiO(2) thin films
Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements
Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy
The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
Electron transport in Ga-rich InxGa1-xN alloys
Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis
High temperature variable-range hopping conductivity in undoped TiO2 thin film
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.1, sa.10, ss.531-533, 2007 (SCI-Expanded)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
Sigma Vectors in Nodal Aberration Theory for High-Precision Telescope Alignment
Fotonik 2022, Ankara, Türkiye, 09 Eylül 2022
DFT Investigation of Electronic and Optical Properties of Silver Doped Germanene
Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.240
A First Principle Calculations of Monolayer InSe Impurity with Pd, Pt, Ag, and Au
Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.239
Structural and Optical Properties of ZnO Nanoplatelet Structure Grown by Mist-CVD
Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.240
Determination of Structural and Electrical Properties of ZnO Thin Films Grown By Mist-Cvd Method on Sapphire with Different Orientations
Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.236
Spin-coherence time measurements of NV- centers in 15N, 15N2 and O implanted diamond
Quantum Optics and Informatics Meeting – 4 (Kobit 4), İzmir, Türkiye, 14 - 15 Mayıs 2020
Hot electron transport based devices for optoelectronics
International Conference on Condensed Matter and Materials Science, 11 - 15 Ekim 2017
A First Principle Investigations of The Electronic Structures For ZGNRs Terminated With Zn, Cd and H
Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.587
First Principle Calculations of Zn and Cd-Doped Zigzag Graphene Nanoribbons
Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.611
The Effect of Zinc, Cadmium and Hydrogen Terminations on The Electronic Structure of Symetrical AGNRs
Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.648
Optimized Ab Initio Studies on Electronic Structure of Wurtzite MgZnO
Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.630
Numerical Optimization of 2DEG Improvement in AlGaN/GaN HEMTs with C-GaN/u-GaN Multi-layer Buffer Structure
Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.629
A Theoretical Study of (5,0) Zigzag BexZn1-Xo Nanotubes: Investigation of Structural, Electronic and Optic Properties Using Density Functional Theory
Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.588
Investigation of The Electronic Properties of Zinc and Magnesium Adsorption on Graphene Sheets
Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.620
Evolution of HELLISH devices: Colurful story of HELLISH Devices from IR to VIS light
The Physics of Optoelectronic Materials and Devices, 27 - 28 Mart 2017
Numerical Investigation Of 2DEG Properties In Ultrathin Barrier AlN GaN Heterostructures With AlGaN and InGaN Back Barriers
18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.47
The Weak Localization in a Two Dimensional Electron Gas in AlInN AlN GaN Heterostructures
18. Ulusal Optik, Elektro-optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016
Ultraince Bariyere Sahip AlN GaN ve InAlN GaN HEMT Yapıların Yapısal ve Yüzey Özelliklerinin İncelenmesi
18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.72
Sn I Au gibi Bazı Safsızlıkların Siyah Fosfor un Elektronik ve Optik Özelliklerine Etkileri
18. Ulusal Optik, Elektro-optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016
Ultraince Bariyerli GaN Temelli HEMT lerde Elektron Gazının Elektriksel Özellikleri ve Saçılma Analizleri
18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Türkiye, 23 Eylül 2016, cilt.50
P tipi ve N tipi InGaN Arka Bariyerli Ultraince AlInN GaN Çoklu Yapılarda İki Boyutlu Elektron Gazı
ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.163
Ultraince AlN GaN Çokluyapılarda Farklı Katmanların Katkılanmasının 2BEG Üzerine etkisi
ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016
Ultraince Bariyerli AlN GaN Çoklu Yapılarda Farklı Katmanların 2BEG Üzerine Etkisi
ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.164
Li KAtkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin DFT ile İncelenmesi
ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016
Li Katkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin İncelenmesi
ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.151
Investigation of the effect of the arsenic impurity on the electronic and optical properties of β–Si3N4dielectric material
Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.402
Influence of interface traps on device performance of AlGaN/GaN HEMTS with Si3N4 passivation
Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.371
Investigation of electrical properties of two dimensional hole gas in hybrid InGaN/ZnO heterotructure
Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.401
Effects of ultrathin InGaN channel layer on two dimensional electron gas in hybrid GaN/InGaN/ZnO heterostructures
Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.406
Scattering Analysis of 2DEG in AlInN/GaN Based Heterostructures With GaN and InGaN Quantum Wells
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013
The Investigation of Temperature Dependent Electrical Transport Properties of InxGa1-xP/GaAs
Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013
First Principles Study of Interaction Between Ru and Graphene Nanoribbons
2nd Int. Conf. on Comp. for Sci. and Techno, Niğde, Türkiye, 9 - 11 Temmuz 2012, ss.70
Electron Confinement in Lattice-Matched InAlN/AlN/GaN Heterostructures with AlyGa1-yN Back-barrier
8th Nanoscience and Nanotechnology Conference, Ankara, Türkiye, 25 - 29 Haziran 2012, ss.332
InAlN/GaN Temelli Yuksek Elektron Mobiliteli Transistörlerin (HEMT) Elektron ve Magneto Iletim Ozellikleri
ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.65
AlGaN/GaN-temelli Yuksek Hareketlilige Sahip Transistorlerde InGaN Geribariyerin Dislokasyon Yogunluguna Etkisi
ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.131
GaN-tabanli HEMT Yapilarin Hareketliligi ve Tasiyici Yogunlugunun Deneysel Incelenmesi
1. Yoğun Madde Fiziği İzmir Toplantısı, İzmir, Türkiye, 06 Nisan 2012, ss.18
Kenarlari Paladyum Atomlari ile Sonlandirilmis Farkli Genisliklerdeki Armchair Grafen Nanoseritlerin Elektronik Ozelliklerinin Yogunluk Fonksiyonu Teorisi Kullanilarak Incelenmesi
1. Yoğun Madde Fiziği İzmir Toplantısı, İzmir, Türkiye, 06 Nisan 2012, ss.1
Self-consistent Transport Properties of Graphene Sheets
Turkish Physical Society 28th International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2011, ss.710
A Numerical Study on Effects of InAlN/AlGaN Barrier in InAlN/AlGaN/AlN/GaN-based High Electron Mobility Transistors
Turkish Physical Society 28th International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2011, ss.711
Numerical Investigation of Two-dimensional Electron Gas in AlGaN/AlN/GaN HEMT with InGaN/GaN Multi-quantum Well Structure
Turkish Physical Society 28th International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2011, ss.745
Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, Fransa, 4 - 07 Temmuz 2010, cilt.8



GaAs Tabanlı Bir MOSFET Yapının 2-Boyutta Akım – Gerilim Karakteristiklerinin İncelenmesi
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.88
Erbiyum Katkılı Eklem Diyotun I-V Karakteristiği
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.46
Grafen Flake Üretim Yöntemlerinin Geliştirilmesi
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.2
InGaN arka bariyerli AlxGa1-xN/AlN/GaN HEMT yapılarındaki ince filmlerin alaşım oranları ve kalınlıklarının nümerik optimizasyonu
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.17
GaN Tabanlı MESFET Yapıların 2-boyutta Elektriksel Karakteristikleri
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.34
Eklem Alan Etkili Transistörlerin Elektriksel Karakteristiklerinin İncelenmesi
17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.12
Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer
2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II, Boston, Amerika Birleşik Devletleri, 29 Kasım - 03 Aralık 2009, ss.4
Cift kanalli AlGaAs/InGaAs/GaAs tabanli p-HEMT Yapilarinda 1 ve 2-boyutta Schrödinger-Poisson Cozumleri ve Akim-Gerilim Incelemeleri
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.59
Safir ve SiC Uzerine Buyutulmus AlGaN/AlN/GaN HEMT Yapilarindaki Sicak Elektron Dinamiginin Karsilastirilmasi
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.73
Sicakliga ve manyetik alana bagli Hall olcumlerinin analizi ile DX-merkezi aktivasyon enerjisi hesabi
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.9
A Numerical Study on Subband Structure of AlxIn1-xN/GaN-based HEMT Structures with Low-Indium (x>0.82) Barrier Layer
Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.509
Determination of Two-Dimensional Electron and Hole Gas Carriers in Al0.88In0.12N/GaN-based Heterostructures Grown by Metal Organic Chemical Vapor Deposition
Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.510
Investigation of the Beating Pattern of Shubnikov-De Haas Oscillations and Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures
Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.484
Small Polaron Transport In Titanium Dioxide Thin Film
Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.133
Optimization of Al-mole Fraction and Layer Thicknesses in AlxGa1-xN/AlN/GaN/AlxGa1-xN/AlN/GaN Double Channel HEMT Structure
Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.454
On the conduction mechanism of TiO2
8th International Conference on Physics of Advanced Materials, Iasi, Romanya, 4 - 07 Haziran 2008, ss.28
A Simple Parallel Conduction Extraction Method for MODFET’s and Undoped GaN-based HEMTs
Workshop on Recent Advances of Low Dimensional Structures and Devices, Nottingham, Birleşik Krallık, 7 - 09 Nisan 2008, ss.90
Stokes shift in In0.13Ga0.87N epitaxial layer grown by MOVPE
Turkish Physical Society 24th International Physics Congress, Malatya, Türkiye, 28 - 31 Ağustos 2007, ss.152
MBE Growth and Characterization of n-AlGaAs/GaAs Heterojunction
Turkish Physical Society 24th International Physics Congress, Malatya, Türkiye, 28 - 31 Ağustos 2007, ss.414
Improved Scattering Analysis of 2DEG carriers in Al0.25Ga0.75N/GaN Heterostructures
NanoTr3 Conference Proceedings, Ankara, Türkiye, 11 - 14 Haziran 2007, ss.134
Electrical Conductivity Behaviour in Anatase Phase TiO2
NanoTr3 Conference Proceedings, Ankara, Türkiye, 11 - 14 Haziran 2007, ss.151
Transport properties of the 2DEG and minority carriers in AlGaN/GaN HEMT Structures grown by MOCVD
13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Kasım 2006, ss.104
Two dimensional hole gas (2DHG) formation evidence in AlGaN/GaN/AlN HEMTs
13. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Kasım 2006, ss.105
QMSA Analysis and Effects of Extreme Space-Charge Scattering on the Mobility in III-V Systems grown by MBE
Turkish Physical Society 23th International Physics Congress, Muğla, Türkiye, 13 - 16 Eylül 2005, ss.1214
Galvanomagnetic measurements of LEC grown Te-doped InSb
11. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Aralık 2004, ss.79
Temperature depence of magnetotransport and electrotransport properties of LEC grown S-doped InAs
11. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 03 Aralık 2004, ss.67
Kitaplar
Nanoteknoloji Devrimini Anlamak
Nobel Yayınevi, 2014