Prof. Dr. SEFER BORA LİŞESİVDİN

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Influence of pH value of precursor on growth, structural, and optical properties of Cu2O thin films grown in Mist-CVD

Kutlu-Narin E., NARİN P., EMRE Ş. B., LİŞESİVDİN S. B.

Physica B: Condensed Matter , cilt.681, 2024 (SCI-Expanded)

The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures

Ardali S., Sonmez F., LİŞESİVDİN S. B., Malin T., Mansurov V., Zhuravlev K., et al.

Materials Science and Engineering: B , cilt.300, 2024 (SCI-Expanded)

Structural and optical properties of mist-CVD grown MgZnO: Effect of precursor solution composition

Han T., Kutlu-Narin E., NARİN P., LİŞESİVDİN B., LİŞESİVDİN S. B.

Physica B: Condensed Matter , cilt.659, 2023 (SCI-Expanded)

First principles calculations of electronic and optical properties of InSe nanosheets doped with noble metal atoms

NARİN P., All Abbas J., Kutlu-Narin E., LİŞESİVDİN S. B., Ozbay E.

Computational Materials Science , cilt.222, 2023 (SCI-Expanded)

Effect of sulfur concentration on structural, optical and electrical properties of Cu2CoSnS4 absorber film for photovoltaic devices

Senguler G. Y., Narin E. K., LİŞESİVDİN S. B., Serin T.

Physica B: Condensed Matter , cilt.648, 2023 (SCI-Expanded) Sürdürülebilir Kalkınma

Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene

LİŞESİVDİN B., LİŞESİVDİN S. B.

Advances in Condensed Matter Physics , cilt.2023, 2023 (SCI-Expanded)

Morphological and optical characterizations of different ZnO nanostructures grown by mist-CVD

NARİN P., Kutlu-Narin E., Kayral S., Tulek R., Gokden S., Teke A., et al.

Journal of Luminescence , cilt.251, 2022 (SCI-Expanded)

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

Narin P., Kutlu-Narin E., Atmaca G., Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., ÖZBAY E.

SURFACE AND INTERFACE ANALYSIS , cilt.54, sa.5, ss.576-583, 2022 (SCI-Expanded)

gpaw-tools – higher-level user interaction scripts for GPAW calculations and interatomic potential based structure optimization

Lişesivdin S. B., Sarikavak-Lisesivdin B.

Computational Materials Science , cilt.204, 2022 (SCI-Expanded)

A novel hot carrier-induced blue light-emitting device

Mutlu S., Erol A., Arslan E., Ozbay E., Lisesivdin S. B., Tiras E.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.881, 2021 (SCI-Expanded)

Investigation of Structural and Optical Properties of ZnO Thin Films Grown on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by Corona Discharge Plasma

Kutlu-Narin E., Narin P., LİŞESİVDİN S. B., Sarikavak-Lisesivdin B.

ADVANCES IN CONDENSED MATTER PHYSICS , cilt.2021, 2021 (SCI-Expanded)

Growth dynamics of mist-CVD grown ZnO nanoplatelets

Narin P., Kutlu-Narin E., LİŞESİVDİN S. B.

PHYSICA B-CONDENSED MATTER , cilt.614, 2021 (SCI-Expanded)

The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures

Sonmez F., Ardali S., Lisesivdin S. B., Malin T., Mansurov V., Zhuravlev K., et al.

JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.33, sa.25, 2021 (SCI-Expanded)

Effect of magnesium content and growth temperature on structural and optical properties of USCVD-grown MgZnO films

Kutlu-Narin E., Narin P., Yildiz A., Lisesivdin S. B.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.127, sa.5, 2021 (SCI-Expanded)

The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

Sonmez F., Ardali S., Atmaca G., Lisesivdin S. B., Malin T., Mansurov V., et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.122, 2021 (SCI-Expanded)

General-purpose open-source 1D self-consistent Schrodinger-Poisson Solver: Aestimo 1D

Hebal H., Koziol Z., Lisesivdin S. B., Steed R.

COMPUTATIONAL MATERIALS SCIENCE , cilt.186, 2021 (SCI-Expanded)

Structural parameters and electronic properties of 2D carbon allotrope: Graphene with a kagome lattice structure

Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., Ozbay E., Jelezko F.

CHEMICAL PHYSICS LETTERS , cilt.760, 2020 (SCI-Expanded)

Effects of annealing under different atmospheres on structural and optical properties of USCVD grown ZnO nanostructures

Kutlu-Narin E., Narin P., Yildiz A., Lisesivdin S. B.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , cilt.254, 2020 (SCI-Expanded)

Investigation of electronic and optical properties of wurtzite MgZnO using GGA plus U formalism

Ibrahem R., NARİN P., Lisesivdin S. B., Ozbay E.

PHILOSOPHICAL MAGAZINE LETTERS , 2019 (SCI-Expanded)

Ab initio study of electronic properties of armchair graphene nanoribbons passivated with heavy metal elements

NARİN P., Abbas J. M. A., Atmaca G., Kutlu E., LİŞESİVDİN S. B., Ozbay E.

SOLID STATE COMMUNICATIONS , cilt.296, ss.8-11, 2019 (SCI-Expanded)

Scattering analysis of ultrathin barrier (< 7nm) GaN-based heterostructures

NARİN P., Arslan E., Ozturk M., Ozturk M., LİŞESİVDİN S. B., ÖZBAY E.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.125, sa.4, 2019 (SCI-Expanded)

Electronic properties of zigzag ZnO nanoribbons with hydrogen and magnesium passivations

Abbas J. M. A., NARİN P., Kutlu E., LİŞESİVDİN S. B., Ozbay E.

PHYSICA B-CONDENSED MATTER , cilt.556, ss.12-16, 2019 (SCI-Expanded)

Electronic properties of graphene nanoribbons doped with zinc, cadmium, mercury atoms

Omeroglu O., Kutlu E., NARİN P., LİŞESİVDİN S. B., Ozbay E.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.104, ss.124-129, 2018 (SCI-Expanded)

Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Atmaca G., NARİN P., Kutlu E., Malin T. V., Mansurov V. G., Zhuravlev K. S., et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES , cilt.65, sa.3, ss.950-956, 2018 (SCI-Expanded)

Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms

Kutlu E., NARİN P., LİŞESİVDİN S. B., Ozbay E.

PHILOSOPHICAL MAGAZINE , cilt.98, sa.2, ss.155-164, 2018 (SCI-Expanded)

Structural and optical properties of hexagonal ZnO nanostructures grown by ultrasonic sprayCVD

NARİN P., Kutlu E., Atmaca G., ATILGAN A., Yildiz A., LİŞESİVDİN S. B.

OPTIK , cilt.168, ss.86-91, 2018 (SCI-Expanded)

High Figure-of-Merit(V-BR(2)/R-ON) AlGan/GAN Power HEMT With Periodically C-Doped GaN Buffer and AlGAN Back Barrier

Lee J., Ju J., Atmaca G., Kim J., Kang S., Lee Y. S., et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY , cilt.6, sa.1, ss.1179-1186, 2018 (SCI-Expanded)

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

Abbas J. M. A., Atmaca G., NARİN P., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S. B.

JOURNAL OF ELECTRONIC MATERIALS , cilt.46, sa.8, ss.5278-5286, 2017 (SCI-Expanded)

The effect of doping in different layers on 2DEG for ultrathin-barrier A1N/GaN heterostructures

Al Abbas J. M., NARİN P., Atmaca G., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S. B.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.11, ss.328-331, 2017 (SCI-Expanded)

Electronic structure of beta-Si3N4 crystals with substitutional icosagen group impurities

Kutlu E., NARİN P., Atmaca G., Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., Ozbay E.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.19, ss.278-282, 2017 (SCI-Expanded)

A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of beta-Si3N4 structure

NARİN P., Kutlu E., Atmaca G., LİŞESİVDİN S. B., Ozbay E.

OPTIK , cilt.147, ss.115-122, 2017 (SCI-Expanded)

The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures

Al Abbas J., Narin P., Atmaca G., Kutlu E., Sarikavak-Lisesivdin B., LİŞESİVDİN S. B.

Optoelectronics and Advanced Materials, Rapid Communications , cilt.11, ss.328-331, 2017 (SCI-Expanded)

Effect of substitutional As impurity on electrical and optical properties of beta-Si3N4 structure

Kutlu E., NARİN P., Atmaca G., Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

MATERIALS RESEARCH BULLETIN , cilt.83, ss.128-134, 2016 (SCI-Expanded)

Electronic properties of Li-doped zigzag graphene nanoribbons

NARİN P., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.84, ss.543-547, 2016 (SCI-Expanded)

Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer

Atmaca G., NARİN P., Sarikavak-Lisesivdin B., Lisesivdin S. B.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.79, ss.67-71, 2016 (SCI-Expanded)

Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer

Atmaca G., Ardali S., Tiras E., Malin T., Mansurov V. G., Zhuravlev K. S., et al.

SOLID-STATE ELECTRONICS , cilt.118, ss.12-17, 2016 (SCI-Expanded)

Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation

Atmaca G., Ardali S., NARİN P., Kutlu E., LİŞESİVDİN S. B., Malin T., et al.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.659, ss.90-94, 2016 (SCI-Expanded)

Evaluation of morphological and chemical differences of gunshot residues in different ammunitions using SEM/EDS technique

Kara I., Sarikavak Y., LİŞESİVDİN S. B., KASAP M.

ENVIRONMENTAL FORENSICS , cilt.17, sa.1, ss.68-79, 2016 (SCI-Expanded)

The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Ardali S., Atmaca G., LİŞESİVDİN S. B., Malin T., Mansurov V., Zhuravlev K., et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS , cilt.252, sa.9, ss.1960-1965, 2015 (SCI-Expanded)

The Relationship Between the Surface Morphology and Chemical Composition of Gunshot Residue Particles

Kara I., LİŞESİVDİN S. B., Kasap M., Er E., Uzek U.

JOURNAL OF FORENSIC SCIENCES , cilt.60, sa.4, ss.1030-1033, 2015 (SCI-Expanded)

Energy Relaxation of Electrons in InGaN Quantum Wells

Sarikavak-Lisesivdin B., LİŞESİVDİN S. B., Balkan N., Atmaca G., NARİN P., Cakmak H., et al.

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE , sa.4, ss.1565-1569, 2015 (SCI-Expanded)

Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

Atmaca G., Narin P., Lisesivdin S. B., Kasap M., Sarikavak-Lisesivdin B.

PHILOSOPHICAL MAGAZINE , cilt.95, sa.1, ss.79-89, 2015 (SCI-Expanded)

Numerical investigation of the 2DEG properties of AlGaN/AlN/GaN HEMT structures with InGaN/GaN MQW back-barrier structure

Atmaca G., Tasli P., Karakoc G., Yazbahar E., LİŞESİVDİN S. B.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.65, ss.110-113, 2015 (SCI-Expanded)

Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures

DÖNMEZ Ö., SARCAN F., LİŞESİVDİN S. B., Vaughan M. P., EROL A., Gunes M., et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.29, sa.12, 2014 (SCI-Expanded)

Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure

LİŞESİVDİN S. B., Atmaca G., Arslan E., Cakmakyapan S., Kazar O., Butun S., et al.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.63, ss.87-92, 2014 (SCI-Expanded)

SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer

Arslan E., Cakmakyapan S., Kazar O., Butun S., LİŞESİVDİN S. B., CİNEL N. A., et al.

ELECTRONIC MATERIALS LETTERS , cilt.10, sa.2, ss.387-391, 2014 (SCI-Expanded)

Optical gain in 1.3-mu m electrically driven dilute nitride VCSOAs

LİŞESİVDİN S. B., Khan N. A., Mazzucato S., Balkan N., Adams M. J., Korpijarvi V., et al.

NANOSCALE RESEARCH LETTERS , cilt.9, 2014 (SCI-Expanded)

A numerical study on subband structure of InxAl1-xN/GaN-based HEMT structures with low-indium (x < 0.10) barrier layer

Elibol K., Atmaca G., Tasli P., LİŞESİVDİN S. B.

SOLID STATE COMMUNICATIONS , cilt.162, ss.8-12, 2013 (SCI-Expanded)

First-principles calculations of Pd-terminated symmetrical armchair graphene nanoribbons

Kuloglu A. F., Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

COMPUTATIONAL MATERIALS SCIENCE , cilt.68, ss.18-22, 2013 (SCI-Expanded)

The effect of InxGa1-xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures (0.05 <= x <= 0.14)

Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

CURRENT APPLIED PHYSICS , cilt.13, sa.1, ss.224-227, 2013 (SCI-Expanded)

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

Tiras E., Celik O., Mutlu S., Ardali S., LİŞESİVDİN S. B., ÖZBAY E.

SUPERLATTICES AND MICROSTRUCTURES , cilt.51, sa.6, ss.733-744, 2012 (SCI-Expanded)

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

Celik O., Tiras E., Ardali S., LİŞESİVDİN S. B., ÖZBAY E.

CENTRAL EUROPEAN JOURNAL OF PHYSICS , cilt.10, sa.2, ss.485-491, 2012 (SCI-Expanded)

Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons

Sarikavak-Lisesivdin B., Lisesivdin S. B., Ozbay E.

MOLECULAR PHYSICS , cilt.110, sa.18, ss.2295-2300, 2012 (SCI-Expanded)

Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers

Kelekci O., LİŞESİVDİN S. B., Ozcelik S., Ozbay E.

Physica B: Condensed Matter , cilt.406, sa.8, ss.1513-1518, 2011 (SCI-Expanded)

Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition

Yildiz A., Tasli P., Sarikavak B., Lisesivdin S. B., Ozturk M. K., Kasap M., et al.

SEMICONDUCTORS , cilt.45, sa.1, ss.33-36, 2011 (SCI-Expanded)

Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer

Yu H., LİŞESİVDİN S. B., Bolukbas B., Kelekci O., Ozturk M. K., ÖZÇELİK S., et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.207, sa.11, ss.2593-2596, 2010 (SCI-Expanded)

Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses

Tasli P., Sarikavak B., Atmaca G., Elibol K., Kuloglu A. F., Lisesivdin S. B.

PHYSICA B-CONDENSED MATTER , cilt.405, sa.18, ss.4020-4026, 2010 (SCI-Expanded)

Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier

LİŞESİVDİN S. B., Tasli P., Kasap M., Ozturk M., Arslan E., Ozcelik S., et al.

THIN SOLID FILMS , cilt.518, sa.19, ss.5572-5575, 2010 (SCI-Expanded)

Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method

Lişesivdin S. B., Yildiz A., Balkan N., Kasap M., Ozcelik S., Ozbay E.

JOURNAL OF APPLIED PHYSICS , cilt.108, sa.1, 2010 (SCI-Expanded)

The substrate temperature dependent electrical properties of titanium dioxide thin films

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.21, sa.7, ss.692-697, 2010 (SCI-Expanded)

Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers

Yildiz A., LİŞESİVDİN S. B., Tasli P., Ozbay E., Kasap M.

CURRENT APPLIED PHYSICS , cilt.10, sa.3, ss.838-841, 2010 (SCI-Expanded)

Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel

Gokden S., Tulek R., Teke A., Leach J. H., Fan Q., Xie J., et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.25, sa.4, 2010 (SCI-Expanded)

Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures

Bengi A., LİŞESİVDİN S. B., Kasap M., Mammadov T., Ozcelik S., Ozbay E.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.13, sa.2, ss.105-108, 2010 (SCI-Expanded)

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

Yildiz A., LİŞESİVDİN S. B., Kasap M., Ozcelik S., Ozbay E., Balkan N.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.98, sa.3, ss.557-563, 2010 (SCI-Expanded)

Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Tasli P., LİŞESİVDİN S. B., Yildiz A., Kasap M., Arslan E., Ozcelik S., et al.

CRYSTAL RESEARCH AND TECHNOLOGY , cilt.45, sa.2, ss.133-139, 2010 (SCI-Expanded)

Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN

Tasli P., Yildiz A., Kasap M., Ozbay E., LİŞESİVDİN S. B., Ozcelik S.

PHILOSOPHICAL MAGAZINE , cilt.90, sa.26, ss.3591-3599, 2010 (SCI-Expanded)

Electrical conduction properties of Si delta-doped GaAs grown by MBE

Yildiz A., LİŞESİVDİN S. B., Altuntas H., Kasap M., Ozcelik S.

PHYSICA B-CONDENSED MATTER , cilt.404, sa.21, ss.4202-4206, 2009 (SCI-Expanded)

Effect of various pseudomorphic AlN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18Al0.82N/GaN based heterostructures

LİŞESİVDİN S. B., Ozbay E.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.3, sa.9, ss.904-909, 2009 (SCI-Expanded)

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Teke A., Goekden S., Tuelek R., Leach J. H., Fan Q., Xie J., et al.

NEW JOURNAL OF PHYSICS , cilt.11, 2009 (SCI-Expanded)

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

LİŞESİVDİN S. B., Altuntas H., Yildiz A., Kasap M., Ozbay E., Ozcelik S.

SUPERLATTICES AND MICROSTRUCTURES , cilt.45, sa.6, ss.604-611, 2009 (SCI-Expanded)

Non-adiabatic small polaron hopping conduction in Nb-doped TiO2 thin film

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.

PHYSICA B-CONDENSED MATTER , cilt.404, ss.1423-1426, 2009 (SCI-Expanded)

Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

LİŞESİVDİN S. B., Balkan N., Makarovsky O., Patane A., Yildiz A., Caliskan M. D., et al.

JOURNAL OF APPLIED PHYSICS , cilt.105, sa.9, 2009 (SCI-Expanded)

Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)

Atmaca G., Elibol K., LİŞESİVDİN S. B., Kasap M., Ozbay E.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.11, sa.5, ss.578-582, 2009 (SCI-Expanded)

Electronic transport in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantum wells

Sun Y., Balkan N., Aslan M., LİŞESİVDİN S. B., Carrere H., Arikan M. C., et al.

JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.21, sa.17, 2009 (SCI-Expanded)

A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs

LİŞESİVDİN S. B., Balkan N., Ozbay E.

MICROELECTRONICS JOURNAL , cilt.40, sa.3, ss.413-417, 2009 (SCI-Expanded)

Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

Yildiz A., LİŞESİVDİN S. B., Kasap M., Bosi M.

SOLID STATE COMMUNICATIONS , cilt.149, ss.337-340, 2009 (SCI-Expanded)

Electrical properties of TiO(2) thin films

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.

JOURNAL OF NON-CRYSTALLINE SOLIDS , cilt.354, ss.4944-4947, 2008 (SCI-Expanded)

Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements

LİŞESİVDİN S. B., Demirezen S., Caliskan M. D., Yildiz A., Kasap M., Ozcelik S., et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.23, sa.9, 2008 (SCI-Expanded)

The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates

Arslan E., Butun S., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.

JOURNAL OF APPLIED PHYSICS , cilt.103, sa.10, 2008 (SCI-Expanded)

Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

ACAR S., LİŞESİVDİN S. B., Kasap M., Oezcelik S., Oezbay E.

THIN SOLID FILMS , cilt.516, sa.8, ss.2041-2044, 2008 (SCI-Expanded)

Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy

Yildiz A., Dagdelen F., ACAR S., LİŞESİVDİN S. B., Kasap M., AYDOĞDU Y., et al.

ACTA PHYSICA POLONICA A , cilt.113, sa.2, ss.731-739, 2008 (SCI-Expanded)

Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements

LİŞESİVDİN S. B., Arslan E., Kasap M., Ozcelik S., Ozbay E.

JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.20, sa.4, 2008 (SCI-Expanded)

The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures

LİŞESİVDİN S. B., Yildiz A., ACAR S., Kasap M., Oezcelik S., Oezbay E.

PHYSICA B-CONDENSED MATTER , cilt.399, sa.2, ss.132-137, 2007 (SCI-Expanded)

Electron transport in Ga-rich InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M., Bosi M.

CHINESE PHYSICS LETTERS , cilt.24, sa.10, ss.2930-2933, 2007 (SCI-Expanded)

Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis

LİŞESİVDİN S. B., Yildiz A., ACAR S., Kasap M., Ozcelik S., Ozbay E.

APPLIED PHYSICS LETTERS , cilt.91, sa.10, 2007 (SCI-Expanded)

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

LİŞESİVDİN S. B., ACAR S., Kasap M., Ozcelik S., Gokden S., Ozbay E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.22, sa.5, ss.543-548, 2007 (SCI-Expanded)

Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors

LİŞESİVDİN S. B., Yildiz A., Kasap M.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.1, sa.9, ss.467-470, 2007 (SCI-Expanded)

High temperature variable-range hopping conductivity in undoped TiO2 thin film

Yildiz A., LİŞESİVDİN S. B., Kasap M., Mardare D.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.1, sa.10, ss.531-533, 2007 (SCI-Expanded)

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Sigma Vector Calculations in Nodal Aberration Theory (NAT) and its Experimental Investigations

Yesiltepe M., Arpa E., Ekinci M., Lişesivdin S. B., Karci O.

10th International Conference on Recent Advances in Air and Space Technologies, RAST 2023, İstanbul, Türkiye, 7 - 09 Haziran 2023

Quantum Materials Science and NV-center-based systems dor future Quantum Computers

LİŞESİVDİN S. B.

2nd International Conference on Informatics and Computer Science, Ankara, Türkiye, 01 Aralık 2022

Germanene: DFT investigation of Electronic and Optical Properties changing with Au and Cu doping

Han T., LİŞESİVDİN B., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.170

Doped Tin Carbide (SnC) Based Nanostructure for Applications In Nanoelectronics

Ansari M. T., NARİN P., LİŞESİVDİN S. B., LİŞESİVDİN B., ÖZBAY E.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.150

MgZnO Thin Films by Mist-CVD Grown: Structural and Optical Properties

Kutlu-Narin E., NARİN P., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.100

Density Functional Theory Investigation of the Interaction of CO molecule with CuO Nanolayer Defect Centers

Turhan P., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.148

Multi-Code, Low-Barrier Python Toolkit For MD/DFT Studies

LİŞESİVDİN B., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.104

Growth and Structural Properties of ZnO Materials by Mist CVD Enhanced by Corona Discharge Plasma

NARİN P., Kutlu-Narin E., LİŞESİVDİN S. B.

9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 Eylül 2022, ss.86

Sigma Vectors in Nodal Aberration Theory for High-Precision Telescope Alignment

Yeşiltepe M., Arpa E., LİŞESİVDİN S. B., KARCI Ö.

Fotonik 2022, Ankara, Türkiye, 09 Eylül 2022

gpaw-tools: UI/GUI scripts for GPAW software

LİŞESİVDİN B., LİŞESİVDİN S. B.

2022 Workshop on Recent Developments in Electronic Structure (ES22), New York, Amerika Birleşik Devletleri, 31 Mayıs 2022

DFT Investigation of Electronic and Optical Properties of Silver Doped Germanene

Han T., LİŞESİVDİN B., LİŞESİVDİN S. B.

Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.240

A First Principle Calculations of Monolayer InSe Impurity with Pd, Pt, Ag, and Au

Abbas J. M. A., NARİN P., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.239

Structural and Optical Properties of ZnO Nanoplatelet Structure Grown by Mist-CVD

NARİN P., Kutlu-Narin E., LİŞESİVDİN S. B.

Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.240

Determination of Structural and Electrical Properties of ZnO Thin Films Grown By Mist-Cvd Method on Sapphire with Different Orientations

Yayla M., LİŞESİVDİN S. B., KASAP M.

Turkish Physical Society 37th International Physics Congress, Muğla, Türkiye, 01 Eylül 2021, ss.236

Spin-polarized DFT calculations of nitrogen-vacancy color centers in diamond with various XC potentials

LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E., Jelezko F.

Quantum Optics and Informatics Meeting – 4 (Kobit 4), İzmir, Türkiye, 14 - 15 Mayıs 2020

Spin-coherence time measurements of NV- centers in 15N, 15N2 and O implanted diamond

LİŞESİVDİN S. B., Lang J., Jelezko F.

Quantum Optics and Informatics Meeting – 4 (Kobit 4), İzmir, Türkiye, 14 - 15 Mayıs 2020

Optical and Structural Properties of ZnO Grown by Mist CVD Using Different Precursor Molarity

NARİN P., Kutlu E., LİŞESİVDİN S. B.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.28

First Principle Study of ZnO Nanoribbon Passivated with H and Mg

Abbas J. M. A., NARİN P., Kutlu E., LİŞESİVDİN S. B., ÖZBAY E.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.37

Growth of ZnO Nanostructures on Sapphire by Ultrasonic Spray CVD

NARİN P., Kutlu E., LİŞESİVDİN S. B.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.29

Structural and Optical Properties of Mg x Zn 1-x O Nanostructures Depending on Growth Temperatures

Kutlu E., NARİN P., YILDIZ A., LİŞESİVDİN S. B.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.31

An Investigation on Lifetime of Hot Phonons in GaN-Based Heterostructures

Atmaca G., NARİN P., Kutlu E., Ardalı Ş., TIRAŞ E., Malin T. V., et al.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.68

Effect of Transducer Power on Optical and Structural Properties of ZnO Nanostructures

Kutlu E., NARİN P., YILDIZ A., LİŞESİVDİN S. B.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.30

The Optical Properties of Group-III Nitrides with LDA-1/2 Approximation

Ömeroğlu Ö., LİŞESİVDİN S. B., ÖZBAY E.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.78

First-Principles Calculation of Optical Properties of Magnesium Zinc Oxide

Ibrahem R., NARİN P., LİŞESİVDİN S. B., ÖZBAY E.

20. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 14 Eylül 2018, ss.14

The Electronic Properties of Asymmetrical Armchair Boron Nitride Nanoribbons With Germanium Termination

Ömeroğlu Ö., LİŞESİVDİN S. B., ÖZBAY E.

Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 09 Eylül 2018, ss.475

Improvement of the Theoretical Band Gaps for AlN, GaN and InN with LDA-1/2 Approach

Ömeroğlu Ö., LİŞESİVDİN S. B., ÖZBAY E.

Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 09 Eylül 2018, ss.495

Back-Side Via Etching Application of SiC for GaN-Based Transistors

haliloglu m. t., LİŞESİVDİN S. B., ÖZBAY E.

1st Light and Light-Based Technologies Workshop, Ankara, Türkiye, 15 Mayıs - 15 Ağustos 2018, ss.51

Hot electron transport based devices for optoelectronics

EROL A., MUTLU S., LİŞESİVDİN S. B., TIRAŞ E.

International Conference on Condensed Matter and Materials Science, 11 - 15 Ekim 2017

A First Principle Investigations of The Electronic Structures For ZGNRs Terminated With Zn, Cd and H

J. M. A. A., Narin P., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.587

First Principle Calculations of Zn and Cd-Doped Zigzag Graphene Nanoribbons

Kutlu E., Ömeroğlu Ö., Ibrahem R., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.611

The Effect of Zinc, Cadmium and Hydrogen Terminations on The Electronic Structure of Symetrical AGNRs

Narin P., J. M. A. A., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.648

Optimized Ab Initio Studies on Electronic Structure of Wurtzite MgZnO

Ibrahem R., Narin P., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.630

Numerical Optimization of 2DEG Improvement in AlGaN/GaN HEMTs with C-GaN/u-GaN Multi-layer Buffer Structure

Atmaca G., Kim J. G., Lee J. H., Won C. H., Kang S. H., LİŞESİVDİN S. B., et al.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.629

A Theoretical Study of (5,0) Zigzag BexZn1-Xo Nanotubes: Investigation of Structural, Electronic and Optic Properties Using Density Functional Theory

Kuloğlu A. F., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.588

Investigation of The Electronic Properties of Zinc and Magnesium Adsorption on Graphene Sheets

Ömeroğlu Ö., Kutlu E., LİŞESİVDİN S. B., ÖZBAY E.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.620

High Voltage Low Leakage Current AlGaN/GaN HEMTs with Multi-layer Buffer and AlGaN Back-Barrier Structure

Lee J. H., Atmaca G., Kim J. G., Son D. H., Ju J. M., LİŞESİVDİN S. B., et al.

Turkish Physical Society 33rd International Physics Congress, Muğla, Türkiye, 6 - 10 Eylül 2017, ss.310

Zn ve Cd Atomları ile Katkılanmış “Armchair” Grafen Nanoşeritlerin Elektronik Yapıları

LİŞESİVDİN S. B., Kutlu E., J. M. A. A., Ömeroğlu Ö., Ibrahem R., ÖZBAY E.

ADIM FİZİK GÜNLERİ VI, Balıkesir, Türkiye, 19 - 21 Temmuz 2017, ss.152

Evolution of HELLISH devices: Colurful story of HELLISH Devices from IR to VIS light

MUTLU S., TIRAŞ E., EROL A., LİŞESİVDİN S. B.

The Physics of Optoelectronic Materials and Devices, 27 - 28 Mart 2017

Numerical Investigation Of 2DEG Properties In Ultrathin Barrier AlN GaN Heterostructures With AlGaN and InGaN Back Barriers

Al Abbas J. M., Atmaca G., Narin P., Kutlu E., LİŞESİVDİN B., LİŞESİVDİN S. B.

18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.47

The Weak Localization in a Two Dimensional Electron Gas in AlInN AlN GaN Heterostructures

ATMACA G., IGOR B., MIRONOV O. A., ROGACKI K., LİŞESİVDİN S. B., ÖZBAY E.

18. Ulusal Optik, Elektro-optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016

Ultraince Bariyere Sahip AlN GaN ve InAlN GaN HEMT Yapıların Yapısal ve Yüzey Özelliklerinin İncelenmesi

Narin P., Kutlu E., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E.

18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016, cilt.72

Sn I Au gibi Bazı Safsızlıkların Siyah Fosfor un Elektronik ve Optik Özelliklerine Etkileri

KUTLU E., NARİN P., ATMACA G., LİŞESİVDİN S. B., ÖZBAY E.

18. Ulusal Optik, Elektro-optik ve Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016

Ultraince Bariyerli GaN Temelli HEMT lerde Elektron Gazının Elektriksel Özellikleri ve Saçılma Analizleri

Öztürk M., Arslan E., Narin P., LİŞESİVDİN S. B., LİŞESİVDİN B., ÖZBAY E.

18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Türkiye, 23 Eylül 2016, cilt.50

P tipi ve N tipi InGaN Arka Bariyerli Ultraince AlInN GaN Çoklu Yapılarda İki Boyutlu Elektron Gazı

AlAbbas J., Narin P., Kutlu E., Atmaca G., LİŞESİVDİN S. B., LİŞESİVDİN B.

ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.163

Ultraince AlN GaN Çokluyapılarda Farklı Katmanların Katkılanmasının 2BEG Üzerine etkisi

AL ABBAS J. M., NARİN P., ATMACA G., KUTLU E., LİŞESİVDİN S. B., LİŞESİVDİN B.

ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016

Ultraince Bariyerli AlN GaN Çoklu Yapılarda Farklı Katmanların 2BEG Üzerine Etkisi

Al Abbas J., Atmaca G., Narin P., Kutlu E., LİŞESİVDİN S. B., LİŞESİVDİN B.

ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.164

Li KAtkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin DFT ile İncelenmesi

KUTLU E., NARİN P., ATMACA G., AL ABBAS J. M., LİŞESİVDİN B., LİŞESİVDİN S. B.

ADIM Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016

Li Katkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin İncelenmesi

Kutlu E., Narin P., Atmaca G., Al Abbas J., LİŞESİVDİN B., LİŞESİVDİN S. B.

ADIM Physics Congress V, Türkiye, 21 - 23 Nisan 2016, cilt.151

The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures

Atmaca G., Narin P., Kutlu E., LİŞESİVDİN S. B.

IX. Uluslararası Balkan Fizik Birliği Konferansı, 24 - 27 Ağustos 2015

Power loss Mechanisms in Surface Passivated AlGaN AlN GaN Heterojunctions

TIRAŞ E., Atmaca G., LİŞESİVDİN S. B., Ardalı Ş., Malin T., Mansurov V., et al.

OSA 2015 Conference on Lasers and Electro-Optics Pacific Rim, Busan, Güney Kore, 24 - 28 Ağustos 2015

The Effect of in situ Si3N4 Passivation on 2DEG Quantum Well Parameters in AlGaN GaN Heterostructures

LİŞESİVDİN S. B., Atmaca G., Ardalı Ş., TIRAŞ E., Malin T., Mansurov V., et al.

IX. Uluslararası Balkan Fizik Birliği Konferansı, 24 - 27 Ağustos 2015

The effect of in situ Si3N4 passivation on hot electron energy relaxation rates in AlGaN GaN Hetrostructures

Atmaca G., Malin T., Kutlu E., Ardalı Ş., Narin P., Mansurov V., et al.

GaN InN AlN 2015, 23 - 25 Mayıs 2015

The Longitudinal Optical Phonon Energy in Passivated AlGaN AlN GaN

Tıraş T., Ardalı Ş., Atmaca G., LİŞESİVDİN S. B., Malin T., Mansurov V., et al.

E-MRS 2015 Spring Meeting, 11 - 15 Mayıs 2015

Surface Passivation Effect in AlGaN AlN GaN Heterostructure

Ardalı Ş., Atmaca G., LİŞESİVDİN S. B., Malin T., Mansurov V., Zhuravlev K., et al.

E-MRS 2015 Spring Meeting, 11 - 15 Mayıs 2015

Investigation of Optical Properties of the Si3N4 structure doped with some Group IIIA Elements

Narin P., Kutlu E., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

Investigation of Optical Properties of the Beta Si3N4 Structure doped with some group IIIA Elements

Narin P., Kutlu E., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1. Uluslararası Organik Elektronik Malzeme Teknolojileri Konferansı, 25 - 28 Mart 2015

First Principle Calculations of Electrical Properties of Insulator Wurtzite Beta Si3N4 with the Aluminum Indium and Gallium Impurities

Kutlu E., Narin P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015

First Principle Calculations of Electrical Properties of lnsulator Wurtzite the Si3N4 with the Aluminum lndium and Gallium lmpurities

Kutlu E., Narin P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

1. Uluslararası Organik Elektronik Malzeme Teknolojileri Konferansı, 25 - 28 Mart 2015

The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures

Atmaca G., Malin T., Kutlu E., Ardalı Ş., Narin P., Mansurov V., et al.

10th All-Russian Conference Gallium, aluminum and indium nitrides, 23 - 25 Mart 2015

Implementation of Simple Parallel Conduction Extraction Method (SPCEM) for seperating 2D and 3D conduction channels in semiconductor structures

LİŞESİVDİN S. B.

Конференция И Школа Молодых Учёных По Актуальным Проблемам Физики Полупроводниковых Структур, Novosibirsk, Rusya, 15 Eylül 2014, ss.25

Ab initio study of oxygen and arsenic impurities on non-linear optical properties of β–Si3N4 material

Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B.

Конференция И Школа Молодых Учёных По Актуальным Проблемам Физики Полупроводниковых Структур, Novosibirsk, Rusya, 15 Eylül 2014, ss.77

Investigation of the effect of the arsenic impurity on the electronic and optical properties of β–Si3N4dielectric material

LİŞESİVDİN S. B., Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN B.

Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.402

Influence of interface traps on device performance of AlGaN/GaN HEMTS with Si3N4 passivation

Atmaca G., Evrensel A. E., LİŞESİVDİN S. B.

Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.371

Investigation of electrical properties of two dimensional hole gas in hybrid InGaN/ZnO heterotructure

Kutlu E., NARİN P., Atmaca G., LİŞESİVDİN S. B., KASAP M.

Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.401

Effects of ultrathin InGaN channel layer on two dimensional electron gas in hybrid GaN/InGaN/ZnO heterostructures

NARİN P., Atmaca G., LİŞESİVDİN S. B.

Turkish Physical Society 31th International Physics Congress, Muğla, Türkiye, 21 Temmuz 2014, ss.406

SiC üzerine büyütülen grafen yapılarda elektriksel iletim kanallarının ayrıştırılıp incelenmesi

LİŞESİVDİN S. B., Atmaca G., ARSLAN E., Ul-Hassan J., Janzen E., ÖZBAY E.

19. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 20 Aralık 2013, ss.13

Gain in electrically-driven 1.3 um dilute nitride VCSOAs

LİŞESİVDİN S. B., Khan N. A., Mazzucato S., Balkan N., Adams M. J.

COST MP0805 Final Meeting, İstanbul, Türkiye, 24 Eylül 2013, ss.17

Scattering Analysis of 2DEG in AlInN/GaN Based Heterostructures With GaN and InGaN Quantum Wells

NARİN P., ATMACA G., BOYALI E., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.

Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013

The Investigation of Temperature Dependent Electrical Transport Properties of InxGa1-xP/GaAs

BOYALI E., NARİN P., ATMACA G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.

Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013

A Numerical Investigation on Electronic Properties of Two Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

NARİN P., Atmaca G., LİŞESİVDİN B., LİŞESİVDİN S. B., KASAP M.

Turkish Physical Society 30th International Physics Congress, İstanbul, Türkiye, 2 - 05 Eylül 2013, ss.529

First Principles Study of Interaction Between Ru and Graphene Nanoribbons

LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E.

2nd Int. Conf. on Comp. for Sci. and Techno, Niğde, Türkiye, 9 - 11 Temmuz 2012, ss.70

Electron Confinement in Lattice-Matched InAlN/AlN/GaN Heterostructures with AlyGa1-yN Back-barrier

Atmaca G., TUNAY TAŞLI P., LİŞESİVDİN S. B.

8th Nanoscience and Nanotechnology Conference, Ankara, Türkiye, 25 - 29 Haziran 2012, ss.332

InAlN/GaN Temelli Yuksek Elektron Mobiliteli Transistörlerin (HEMT) Elektron ve Magneto Iletim Ozellikleri

TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.

ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.65

AlGaN/GaN-temelli Yuksek Hareketlilige Sahip Transistorlerde InGaN Geribariyerin Dislokasyon Yogunluguna Etkisi

LİŞESİVDİN B., LİŞESİVDİN S. B., ÖZBAY E.

ADIM Physics Congress II, Denizli, Türkiye, 25 - 27 Nisan 2012, ss.131

GaN-tabanli HEMT Yapilarin Hareketliligi ve Tasiyici Yogunlugunun Deneysel Incelenmesi

Güneş C., Kuloğlu A. F., LİŞESİVDİN S. B., ÖZBAY E.

1. Yoğun Madde Fiziği İzmir Toplantısı, İzmir, Türkiye, 06 Nisan 2012, ss.18

Kenarlari Paladyum Atomlari ile Sonlandirilmis Farkli Genisliklerdeki Armchair Grafen Nanoseritlerin Elektronik Ozelliklerinin Yogunluk Fonksiyonu Teorisi Kullanilarak Incelenmesi

Kuloğlu A. F., Alsancak B., Güneş C., LİŞESİVDİN S. B., ÖZBAY E.

1. Yoğun Madde Fiziği İzmir Toplantısı, İzmir, Türkiye, 06 Nisan 2012, ss.1

Self-consistent Transport Properties of Graphene Sheets

Elibol K., Atmaca G., Kelekçi Ö., TUNAY TAŞLI P., ÖZBAY E., LİŞESİVDİN S. B.

Turkish Physical Society 28th International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2011, ss.710

A Numerical Study on Effects of InAlN/AlGaN Barrier in InAlN/AlGaN/AlN/GaN-based High Electron Mobility Transistors

Elibol K., Güneş C., Kuloğlu A. F., Boyalı E., LİŞESİVDİN S. B.

Turkish Physical Society 28th International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2011, ss.711

Numerical Investigation of Two-dimensional Electron Gas in AlGaN/AlN/GaN HEMT with InGaN/GaN Multi-quantum Well Structure

Karakoç G., Atmaca G., Yazbahar E., TUNAY TAŞLI P., LİŞESİVDİN S. B.

Turkish Physical Society 28th International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2011, ss.745

Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs

Celik O., Tiras E., Ardali S., LİŞESİVDİN S. B., ÖZBAY E.

3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, Fransa, 4 - 07 Temmuz 2010, cilt.8

GaAs Tabanlı Bir MOSFET Yapının 2-Boyutta Akım – Gerilim Karakteristiklerinin İncelenmesi

Kuloğlu A. F., LİŞESİVDİN S. B., KASAP M.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.88

Erbiyum Katkılı Eklem Diyotun I-V Karakteristiği

Kartaloğlu O., Atmaca G., Elibol K., LİŞESİVDİN S. B.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.46

Grafen Flake Üretim Yöntemlerinin Geliştirilmesi

Elibol K., Kelekçi Ö., Atmaca G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., et al.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.2

InGaN arka bariyerli AlxGa1-xN/AlN/GaN HEMT yapılarındaki ince filmlerin alaşım oranları ve kalınlıklarının nümerik optimizasyonu

Kelekçi Ö., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., ÖZBAY E.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.17

GaN Tabanlı MESFET Yapıların 2-boyutta Elektriksel Karakteristikleri

Elibol K., Atmaca G., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.34

Eklem Alan Etkili Transistörlerin Elektriksel Karakteristiklerinin İncelenmesi

Atmaca G., Elibol K., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.

17. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 05 Ekim 2010, ss.12

Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer

Yu H., LİŞESİVDİN S. B., Bölükbaş B., Kelekçi Ö., Öztürk M., Çakmak H.

2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II, Boston, Amerika Birleşik Devletleri, 29 Kasım - 03 Aralık 2009, ss.4

Safir ve SiC Üzerine Büyütülmüş AlGaN/AlN/GaN HEMT Yapılardaki Sıcak Elektron Dinamiğinin Karşılaştırılması

Ilgaz A., Gökden S., Teke A., Özçelik S., Lişesivdin B., Özbay E.

16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Kasım 2009, ss.73

Cift kanalli AlGaAs/InGaAs/GaAs tabanli p-HEMT Yapilarinda 1 ve 2-boyutta Schrödinger-Poisson Cozumleri ve Akim-Gerilim Incelemeleri

Atmaca G., Elibol K., TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M.

16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.59

Safir ve SiC Uzerine Buyutulmus AlGaN/AlN/GaN HEMT Yapilarindaki Sicak Elektron Dinamiginin Karsilastirilmasi

ILGAZ A., GÖKDEN S., TEKE A., ÖZÇELİK S., LİŞESİVDİN S. B., ÖZBAY E.

16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.73

Sicakliga ve manyetik alana bagli Hall olcumlerinin analizi ile DX-merkezi aktivasyon enerjisi hesabi

LİŞESİVDİN S. B., ALTUNTAŞ H., YILDIZ A., KASAP M., ÖZBAY E., ÖZÇELİK S.

16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Ekim 2009, ss.9

A Numerical Study on Subband Structure of AlxIn1-xN/GaN-based HEMT Structures with Low-Indium (x>0.82) Barrier Layer

TUNAY TAŞLI P., LİŞESİVDİN S. B., KASAP M., Elibol K., Atmaca G., ÖZBAY E.

Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.509

Determination of Two-Dimensional Electron and Hole Gas Carriers in Al0.88In0.12N/GaN-based Heterostructures Grown by Metal Organic Chemical Vapor Deposition

TUNAY TAŞLI P., LİŞESİVDİN S. B., YILDIZ A., KASAP M., ÖZBAY E.

Turkish Physical Society 26th International Physics Congress, Muğla, Türkiye, 24 - 27 Eylül 2009, ss.510

Investigation of the Beating Pattern of Shubnikov-De Haas Oscillations and Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures

LİŞESİVDİN S. B., Balkan N., Makarovsky O., Patane A., YILDIZ A., Çalışkan M. D., et al.

Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.484

Small Polaron Transport In Titanium Dioxide Thin Film

YILDIZ A., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S., Mardare D.

Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.133

Optimization of Al-mole Fraction and Layer Thicknesses in AlxGa1-xN/AlN/GaN/AlxGa1-xN/AlN/GaN Double Channel HEMT Structure

Elibol K., Atmaca G., LİŞESİVDİN S. B., KASAP M., ÖZÇELİK S.

Turkish Physical Society 25th International Physics Congress, Muğla, Türkiye, 25 - 29 Ağustos 2008, ss.454

Kitap & Kitap Bölümleri

Nanoteknoloji Devrimini Anlamak

LİŞESİVDİN B., LİŞESİVDİN S. B.

Nobel Yayınevi, 2014

Metrikler

Yayın

201

Atıf (WoS)

1149

H-İndeks (WoS)

Atıf (Scopus)

1161

H-İndeks (Scopus)

Atıf (Scholar)

917

H-İndeks (Scholar)

Proje

Tez Danışmanlığı

Açık Erişim

BM Sürdürülebilir Kalkınma Amaçları

Yayınlar & Eserler

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar