Publications & Works

Articles Published in Journals That Entered SCI, SSCI and AHCI Indexes

Comparison of dielectric characteristics for metal-semiconductor structures fabricated with different interlayers thicknesses

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.32, no.22, pp.26700-26708, 2021 (Journal Indexed in SCI) identifier identifier

Frequency Response of Metal-Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.68, no.10, pp.5085-5089, 2021 (Journal Indexed in SCI) identifier identifier

Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.32, no.12, pp.15732-15739, 2021 (Journal Indexed in SCI) Sustainable Development identifier identifier

Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.32, no.6, pp.7657-7670, 2021 (Journal Indexed in SCI) identifier identifier

The possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctions

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.31, no.21, pp.18640-18648, 2020 (Journal Indexed in SCI) identifier identifier

Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.31, no.16, pp.13337-13343, 2020 (Journal Indexed in SCI) identifier identifier

Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes

Journal of Materials Science: Materials in Electronics, vol.31, no.14, pp.11665-11672, 2020 (Journal Indexed in SCI Expanded) identifier identifier

Investigation of the effect of different Bi2O3–x:PVA (x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters

Journal of Materials Science: Materials in Electronics, vol.31, no.10, pp.8033-8042, 2020 (Journal Indexed in SCI Expanded) identifier identifier

Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, vol.234, no.3, pp.505-516, 2020 (Journal Indexed in SCI) identifier identifier

Dielectric properties of Ag/Ru-0.03-PVA/n-Si structures

BULLETIN OF MATERIALS SCIENCE, vol.42, no.5, 2019 (Journal Indexed in SCI) Creative Commons License identifier identifier

Dielectric characterization of BSA doped-PANI interlayered metal-semiconductor structures

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.30, no.15, pp.14224-14232, 2019 (Journal Indexed in SCI) identifier identifier

A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.30, no.13, pp.12122-12129, 2019 (Journal Indexed in SCI) identifier identifier

Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.30, no.12, pp.11536-11541, 2019 (Journal Indexed in SCI) identifier identifier

A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.30, no.7, pp.6491-6499, 2019 (Journal Indexed in SCI) Sustainable Development identifier identifier

Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage

Journal of Materials Science: Materials in Electronics, vol.29, no.15, pp.12735-12743, 2018 (Journal Indexed in SCI Expanded) identifier identifier

Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures

JOURNAL OF ELECTRONIC MATERIALS, vol.47, no.7, pp.3510-3520, 2018 (Journal Indexed in SCI) identifier identifier

Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures

PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, vol.28, no.3, pp.325-331, 2018 (Journal Indexed in SCI) identifier identifier

Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.75, pp.124-129, 2018 (Journal Indexed in SCI) Sustainable Development identifier identifier

On the anomalous peak and negative capacitance in the capacitance-voltage (C-V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.29, no.4, pp.2890-2898, 2018 (Journal Indexed in SCI) identifier identifier

Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.28, no.9, pp.6413-6420, 2017 (Journal Indexed in SCI) identifier identifier

Frequency dependent C-V and G/omega-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.28, no.6, pp.4951-4957, 2017 (Journal Indexed in SCI) identifier identifier

Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures

Journal of Materials Science: Materials in Electronics, vol.28, no.2, pp.1315-1321, 2017 (Journal Indexed in SCI Expanded) identifier identifier

Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO2/n-4H-SiC Structure

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, vol.11, no.5, pp.626-630, 2016 (Journal Indexed in SCI) identifier identifier

Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.27, no.8, pp.8340-8347, 2016 (Journal Indexed in SCI) identifier identifier

Current-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes

INDIAN JOURNAL OF PURE & APPLIED PHYSICS, vol.53, no.1, pp.56-65, 2015 (Journal Indexed in SCI) identifier identifier

Trapping levels in TlGaSe2 single crystals

JOURNAL OF ALLOYS AND COMPOUNDS, vol.566, pp.108-111, 2013 (Journal Indexed in SCI) identifier identifier

Frequency and Voltage Dependence of Dielectric Loss of MgB2 Composites at Different Temperatures

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, vol.26, no.6, pp.2165-2170, 2013 (Journal Indexed in SCI) identifier identifier

A study of polymer-derived erbia-doped Bi2O3 nanocrystalline ceramic powders

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, vol.66, no.2, pp.317-323, 2013 (Journal Indexed in SCI) identifier identifier

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.16, no.2, pp.344-351, 2013 (Journal Indexed in SCI) identifier identifier

The Main Electrical and Interfacial Properties of Benzotriazole and Fluorene Based Organic Devices

JOURNAL OF MACROMOLECULAR SCIENCE PART A-PURE AND APPLIED CHEMISTRY, vol.50, no.2, pp.168-174, 2013 (Journal Indexed in SCI) identifier identifier

Structural and electrical characterization of rectifying behavior in n-type/intrinsic ZnO-based homojunctions

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, vol.177, no.8, pp.588-593, 2012 (Journal Indexed in SCI) identifier identifier

Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, vol.177, no.5, pp.416-420, 2012 (Journal Indexed in SCI) identifier identifier

Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.15, no.1, pp.41-46, 2012 (Journal Indexed in SCI) identifier identifier

FUZZY CONTROL OF SEMI-BATCH POLYMERIZATION REACTOR WITH GENETIC ALGORITHM

JOURNAL OF THE FACULTY OF ENGINEERING AND ARCHITECTURE OF GAZI UNIVERSITY, vol.26, no.3, pp.613-621, 2011 (Journal Indexed in SCI) identifier identifier

Effects of illumination on I-V, C-V and G/w-V characteristics of Au/n-CdTe Schottky barrier diodes

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.13, pp.713-718, 2011 (Journal Indexed in SCI) identifier identifier

On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures

JOURNAL OF ALLOYS AND COMPOUNDS, vol.509, no.18, pp.5555-5561, 2011 (Journal Indexed in SCI) identifier identifier

The Gaussian distribution of barrier height in Au/n-GaAs Schottky diodes at high temperatures

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.5, pp.438-442, 2011 (Journal Indexed in SCI) identifier identifier

A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.13, pp.53-58, 2011 (Journal Indexed in SCI) identifier

The dependence of electrical properties of Al/NphAOEMA/PEDOT-PSS/ITO structures on temperature

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.4, no.12, pp.2132-2135, 2010 (Journal Indexed in SCI) identifier identifier

AC electrical conductivity and dielectric properties of Al/NphAOEMA/PEDOT-PSS/ITO structure at different temperatures

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.4, no.11, pp.1779-1782, 2010 (Journal Indexed in SCI) identifier identifier

Temperature and frequency dependent dielectric properties of Au/Bi4Ti3O12/SiO2/Si (MFIS) structures

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.12, no.10, pp.2139-2144, 2010 (Journal Indexed in SCI) identifier

Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.4, no.8, pp.1225-1228, 2010 (Journal Indexed in SCI) identifier identifier

Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.4, no.7, pp.1002-1007, 2010 (Journal Indexed in SCI) identifier identifier

Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

SURFACE AND INTERFACE ANALYSIS, vol.42, no.6-7, pp.1257-1260, 2010 (Journal Indexed in SCI) identifier identifier

The effects of series resistance on the forward bias I-V characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.4, no.5, pp.616-619, 2010 (Journal Indexed in SCI) identifier identifier

The distribution of barrier heights in Au/n-Si Schottky barrier diodes from I-V-T measurements

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.4, no.4, pp.579-583, 2010 (Journal Indexed in SCI) identifier identifier

Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.12, no.6, pp.224-232, 2009 (Journal Indexed in SCI) identifier identifier

Electrical Characteristics of Al/Polyindole Schottky Barrier Diodes. I. Temperature Dependence

JOURNAL OF APPLIED POLYMER SCIENCE, vol.113, no.5, pp.2955-2961, 2009 (Journal Indexed in SCI) identifier identifier

Gamma-ray irradiation effects on the interface states of MIS structures

SENSORS AND ACTUATORS A-PHYSICAL, vol.151, no.2, pp.168-172, 2009 (Journal Indexed in SCI) identifier identifier

Characterization of series resistance in the Sn/p-InP Schottky barrier diodes using temperature dependent C-V,G/w and DLTS

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.3, no.3, pp.171-174, 2009 (Journal Indexed in SCI) identifier identifier

Irradiation effects on the C-V and G/omega-V characteristics of Sn/p-Si (MS) structures

RADIATION PHYSICS AND CHEMISTRY, vol.78, no.2, pp.130-134, 2009 (Journal Indexed in SCI) identifier identifier

On the temperature dependent anomalous peak and negative capacitance in Au/n-InP Schottky barrier diodes

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.3, no.1, pp.56-59, 2009 (Journal Indexed in SCI) identifier identifier

Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.2, no.12, pp.838-841, 2008 (Journal Indexed in SCI) identifier identifier

Temperature dependent behavior of Sn/p-InP Schottky barrier diodes

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.2, no.12, pp.766-769, 2008 (Journal Indexed in SCI) identifier identifier

Frequency and gate voltage effects on the dielectric properties of Au/SiO(2)/n-Si structures

MICROELECTRONIC ENGINEERING, vol.85, no.9, pp.1910-1914, 2008 (Journal Indexed in SCI) identifier identifier

The frequency dependent electrical characteristics of Sn/p-InP Schottky barrier diodes (SBDs)

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.2, no.9, pp.525-529, 2008 (Journal Indexed in SCI) identifier identifier

Characterization of interface states at Au/SnO2/n-Si (MOS) structures

VACUUM, vol.82, no.11, pp.1203-1207, 2008 (Journal Indexed in SCI) identifier identifier

Effects of gamma-ray irradiation on the C-V and G/omega-V characteristics of Al/SiO2/p-Si (MIS) structures

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol.266, no.5, pp.791-796, 2008 (Journal Indexed in SCI) identifier identifier

The interface states analysis of the MIS structure as a function of frequency

MICROELECTRONIC ENGINEERING, vol.85, no.3, pp.542-547, 2008 (Journal Indexed in SCI) identifier identifier

Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol.264, no.1, pp.73-78, 2007 (Journal Indexed in SCI Expanded) identifier identifier

Analysis of interface states and series resistance at MIS structure irradiated under Co-60 gamma-rays

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol.580, no.3, pp.1588-1593, 2007 (Journal Indexed in SCI) identifier identifier

The C-V-f and G/omega-V-f characteristics of Au/SiO2/n-Si capacitors

PHYSICA B-CONDENSED MATTER, vol.391, no.1, pp.59-64, 2007 (Journal Indexed in SCI) identifier identifier

Effects of beta-ray irradiation on the C-V and G/ω-V characteristics of Au/SiO2/n-Si (MOS) structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol.254, no.2, pp.273-277, 2007 (Journal Indexed in SCI Expanded) identifier identifier

The effects of frequency and gamma-irradiation on the dielectric properties of MIS type Schottky diodes

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol.254, no.1, pp.113-117, 2007 (Journal Indexed in SCI) identifier identifier

Co-60 gamma irradiation effects on the current-voltage (I-V) characteristics of Al/SiO2/P-Si (MIS) Schottky diodes

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol.568, no.2, pp.863-868, 2006 (Journal Indexed in SCI) identifier identifier

Electrical characteristics of Co-60 gamma-ray irradiated MIS Schottky diodes

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol.252, no.2, pp.257-262, 2006 (Journal Indexed in SCI) identifier identifier

Frequency and voltage dependent surface states and series resistance of novel Si solar cells

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol.134, pp.291-295, 2006 (Journal Indexed in SCI) identifier identifier

Electrical characterization of novel Si solar cells

THIN SOLID FILMS, vol.511, pp.258-264, 2006 (Journal Indexed in SCI) identifier identifier

Effects of Co-60 gamma-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol.555, pp.260-265, 2005 (Journal Indexed in SCI) identifier identifier

Analysis of I-V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol.122, no.2, pp.133-139, 2005 (Journal Indexed in SCI) identifier identifier

Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes

SOLID-STATE ELECTRONICS, vol.49, no.6, pp.1052-1054, 2005 (Journal Indexed in SCI) identifier identifier

Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures

PHYSICA B-CONDENSED MATTER, vol.357, pp.386-397, 2005 (Journal Indexed in SCI) identifier identifier

Au/SnO2/n-Si (MOS) structures response to radiation and frequency

MICROELECTRONICS JOURNAL, vol.34, no.11, pp.1043-1049, 2003 (Journal Indexed in SCI) identifier identifier

Coherent infrared image converter based on GaAs and BSO crystals

IMAGING SCIENCE JOURNAL, vol.49, no.4, pp.197-203, 2001 (Journal Indexed in SCI) identifier identifier

Characteristic features of an ionization system with semiconducting cathode

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.2, no.3, pp.267-273, 1998 (Journal Indexed in SCI) identifier identifier

A semiconductor photographic system for high-speed measurement

IMAGING SCIENCE JOURNAL, vol.46, no.2, pp.65-68, 1998 (Journal Indexed in SCI) identifier identifier

Complex-radical cyclocopolymerization of allyl a-(N-maleimido)acetate with styrene and maleic anhydride

MACROMOLECULAR CHEMISTRY AND PHYSICS, vol.198, no.8, pp.2475-2487, 1997 (Journal Indexed in SCI) identifier identifier

A stable discharge glow in gas discharge system with semiconducting cathode

JOURNAL DE PHYSIQUE III, vol.7, no.4, pp.927-936, 1997 (Journal Indexed in SCI) identifier identifier

The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films

JOURNAL OF INFORMATION RECORDING, vol.23, no.5, pp.437-445, 1997 (Journal Indexed in SCI) identifier identifier

Enhancement of the sensitivity of an ionization type semiconductor photographic system

JOURNAL OF PHOTOGRAPHIC SCIENCE, vol.44, no.4, pp.110-115, 1996 (Journal Indexed in SCI) identifier identifier

RECORDING THE RESISTANCE INHOMOGENEITY IN HIGH-RESISTIVITY SEMICONDUCTORS PLATES

INFRARED PHYSICS & TECHNOLOGY, vol.36, no.3, pp.661-668, 1995 (Journal Indexed in SCI) identifier identifier

TEMPERATURE-DEPENDENT ELECTRICAL CHARACTERISTICS OF AL-SIOX-PSI SOLAR-CELLS

SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol.32, no.2, pp.115-127, 1994 (Journal Indexed in SCI) identifier identifier

Articles Published in Other Journals