Prof. Dr. ŞEMSETTİN ALTINDAL

Yayın Ağı

Makaleler 405

1. Long short-term memory (LSTM) networks for precision prediction of Schottky barrier photodiode behavior at different ıllumination levels

Tulum G., Nematzadeh S., Taşçıoğlu İ., ALTINDAL Ş., Yakuphanoğlu F.

Scientific Reports , cilt.15, sa.1, 2025 (SCI-Expanded)

2. Comparative dielectric analysis of Schottky diodes from the perspective of the high-dielectric interlayers (pure, N, S, Cu doped DLC) and light exposure

Balıkçı L. M., ERBİLEN TANRIKULU E., Karatay K., ALTINDAL Ş.

Diamond and Related Materials , cilt.160, 2025 (SCI-Expanded)

3. Negative capacitance and negative dielectric behavior of MIS device with Rhenium-Type Schottky contacts

Güler M. İ., Kaymaz A., EVCİN BAYDİLLİ E., Durmuş H., ALTINDAL Ş.

Solid-State Electronics , cilt.229, 2025 (SCI-Expanded)

4. Dielectric properties and polarization mechanisms of the DLC-interlayered Schottky structures under low-moderate and high-temperatures

Bozkurt R. B., EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş., Durmuş H.

Materials Science and Engineering: B , cilt.320, 2025 (SCI-Expanded)

5. Analysis of the electrical parameters, frequency, and voltage dependence of surface states and series resistance in Au/n-Si Schottky diodes (SDs) with (Fe2O3) interlayer

Alptekin S., Baştuğ A., YILDIZ K., ALTINDAL Ş., SARITAŞ S.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.29, 2025 (SCI-Expanded)

6. Determination of electrical parameters of 3 % graphene-doped polyvinylalcohol (PVA) interfacial layered Au/n-Si (MPS) structure irradiated with various doses of beta (β) by using impedance measurements

Abay Ö., UYAR E., ULUSOY M., ALTINDAL Ş., BİLGE OCAK S., GÖKMEN U.

Physica B: Condensed Matter , cilt.714, 2025 (SCI-Expanded)

7. Exploring the dielectric and AC transport characteristics of Au/(Sn:Fe2O3)/n-Si diodes using impedance spectroscopy over extended frequency and voltage intervals

Baştuğ A., Taşçıoğlu I., Khalkhali A., ALTINDAL Ş., YILDIRIM M., SARITAŞ S.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.28, 2025 (SCI-Expanded)

8. Assessment of wide frequency range admittance properties of Au/(ZnO:CeO2:PVP)/n-Si Schottky diodes

ÖZÇELİK U., Üstün O., AZIZIAN-KALANDARAGH Y., ALTINDAL Ş., ÖZÇELİK S.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.30, 2025 (SCI-Expanded, Scopus)

9. Dielectric response of Au/(Co:PVA)/n-Si/Al structures under varying frequencies and bias voltages

Güçlü Ç., Khalkhali A., Hameed S. A., Taşçıoğlu İ., Demirci A., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.23, 2025 (SCI-Expanded)

10. On the investigation of current transport mechanisms (CTMs) of the crystalline Si solar cells utilizing current/voltage (I–V) characteristics in temperature range of 110-380 K

Büyükbaş-Uluşan A., TURAN R., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.19, 2025 (SCI-Expanded)

11. Optimizing Schottky barrier diodes: the role of PVC and PVC: molybdenum interlayers in electrophysical properties

AZIZIAN-KALANDARAGH Y., Yeşilyurt H., Yükseltürk E., ALTINDAL Ş., ÖZÇELİK S.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.17, 2025 (SCI-Expanded)

12. Electrical properties, conduction mechanisms, and voltage dependent curves of interface traps, series resistance in Au/(Sn:Fe2O3)/n-Si structures using impedance measurements

Baştuğ A., Khalkhali A., SARITAŞ S., YILDIRIM M., Güçlü Ç., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.16, 2025 (SCI-Expanded)

13. A detailed analysis of electrical parameters and energy dependence of interface Traps in Au-(Co:PVA)-nSi-Al structure via impedance measurements

Güçlü Ç., Hameed S., Khalkhali A., Taşçıoğlu İ., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.14, 2025 (SCI-Expanded)

14. On comparison of Au/n-Si (MS) Schottky diodes with and without (Brushite + Monetite: PVC) an interlayer grown by spin coating technique

SEVGİLİ Ö., ŞAFAK ASAR Y., ALTINDAL Ş., ULUSOY M., AZIZIAN-KALANDARAGH Y.

Electrical Engineering , cilt.107, sa.5, ss.6693-6704, 2025 (SCI-Expanded)

15. On the possible current transport mechanisms, Energy-dependent distribution profile of interface states, and temperature sensitivity in Au/(PEG:Er–MnFe2O4)/n–Si structures

ÇETİNKAYA H. G., Badali Y., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.15, 2025 (SCI-Expanded)

16. Al/(S:DLC)/p-Si/Au (MIS) structure-based temperature sensors for moderate and high temperatures at enough high frequencies (0.1, 0.5, and 1 MHz)

Balcı E., Vahid A. F., ALTINDAL Ş.

Diamond and Related Materials , cilt.154, 2025 (SCI-Expanded)

17. Detailed analysis of possible current-transport mechanisms (CTMs) in Au/(P3DMTFT)/n-GaAs Schottky diodes (SDs) in a wide range of temperature

Kansız Y., SEVGİLİ Ö., ÖZDEMİR A. F., ALDEMİR D. A., Abdolahpour Salari M., ALTINDAL Ş.

Physica B: Condensed Matter , cilt.700, 2025 (SCI-Expanded)

18. On an investigation of optoelectrical features in Au/(MWCNT:PVA-B(OH)3)/n-Si structure, using I–V data, in dark and illumination conditions

Ata D., ALTINDAL Ş., BALBAŞI M.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.9, 2025 (SCI-Expanded)

19. Effect of TiO2-Surfactant Interface on the Electrical and Dielectric Properties of a Metal–Insulator–Semiconductor (MIS) Structure

AZIZIAN-KALANDARAGH Y., EFKERE H. İ., Barkhordari A., Marmiroli B., Sartori B., ÖZÇELİK S., et al.

Journal of Electronic Materials , cilt.54, sa.3, ss.2388-2403, 2025 (SCI-Expanded, Scopus)

20. Effectuality of frequency dependent dielectric characterization of (N:DLC) film deposition between the metal-semiconductor interface

Urgun N., Tan S., Feizollahi Vahid A., Avar B., ALTINDAL Ş.

Physica B: Condensed Matter , cilt.698, 2025 (SCI-Expanded)

21. Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations

Alarabi A. A., Çiçek O., Makara H., Ünal F., Zurnacı M., ALTINDAL Ş.

Engineering Science and Technology, an International Journal , cilt.62, 2025 (SCI-Expanded)

22. Comparison of electrical properties of pure and copper-doped diamond-like carbon interfacial-layered Schottky devices under different temperature conditions

Şahin M., Kaymaz A., Feizollahi Vahid A., Özerden E., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.36, sa.5, 2025 (SCI-Expanded)

23. Investigation of the electrical properties of electrochemically grown DLC films doped with specific elements (S, N, Cu) in Schottky structures as interlayers

Balıkçı L., Taşçıoğlu İ., ULUSOY M., Vahid A. F., ALTINDAL Ş.

Journal of Alloys and Compounds , cilt.1010, 2025 (SCI-Expanded)

24. On a detail examination of frequency and voltage dependence of dielectric, electric modulus, ac conductivity (σac) of the Al/DLC/p-Si structures between 2 kHz and 1 MHz

BALCI E., Vahid A. F., Avar B., ALTINDAL Ş.

Physica B: Condensed Matter , cilt.695, 2024 (SCI-Expanded)

25. Quaternary functional semiconductor device-based temperature sensors for low and high temperatures (LTs, HTs)

ALTINDAL Ş., Yildiz K., Dere A., Orman Y., Yakuphanoglu F.

PHYSICA SCRIPTA , cilt.99, sa.12, 2024 (SCI-Expanded)

26. The current–voltage (I–V) characteristics and low–high impedance measurements (C/G–V) of Au/(AgCdS:PVP)/n-Si Schottky diode (SD) at dark and under illumination conditions

Aslanbaş G., DURMUŞ P., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.36, 2024 (SCI-Expanded)

27. A strategy to predict the current conduction mechanisms into Al/PVP:Gr-BaTiO3/p-Si Schottky structure using Artificial Neural Network

AZIZIAN-KALANDARAGH Y., ÖZÇELİK S., Barkhordari A., ALTINDAL Ş.

Micro and Nanostructures , cilt.195, 2024 (Scopus)

28. A high sensitivity temperature coefficient of the Au/n-Si with (CdTe-PVA) structure based on capacitance/conductance-voltage (C/G-V) measurements in a wide range of temperature

Erbilen Tanrıkulu E., Güçlü Ç. Ş., Altındal Ş., Durmuş H.

MEASUREMENT , cilt.238, 2024 (SCI-Expanded)

29. Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities

Bengi S., ÇETİNKAYA H. G., ALTINDAL Ş., Zeyrek S.

Journal of Electronic Materials , cilt.53, sa.9, ss.5606-5616, 2024 (SCI-Expanded)

30. Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices

EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş.

Radiation Physics and Chemistry , cilt.222, 2024 (SCI-Expanded)

31. A comparative study of the Au/n-Si (MS) and Au/(ZnO:CeO2:PVP)/n-Si (MPS) Schottky structures by using current/voltage characteristics in dark and under illumination

Üstün O., ÖZÇELİK U., AZIZIAN-KALANDARAGH Y., ALTINDAL Ş., ÖZÇELİK S.

Physica Scripta , cilt.99, sa.9, 2024 (SCI-Expanded, Scopus)

32. Machine learning-assisted prediction of the electronic features of a Schottky diode interlaid with PVP:BaTiO3 composite

AZIZIAN-KALANDARAGH Y., Barkhordari A., ÖZÇELİK S., ALTINDAL Ş.

Physica Scripta , cilt.99, sa.8, 2024 (SCI-Expanded)

33. A study on the complex dielectric (ε)/electric-modulus (M)/impedance (Z*), tangent-loss (tanδ), and ac conductivity (σac) of the Al/(S:DLC)/p-Si/Au (MIS)-type Schottky structures in a wide range of frequency and voltage at room temperature (RT)

Eroğlu Tezcan A., A.hameed S., Feizollahi Vahid A., ULUSOY M., ALTINDAL Ş.

Physica B: Condensed Matter , cilt.684, 2024 (SCI-Expanded)

34. The study of the dependence of dielectric properties, electric modulus, and ac conductivity on the frequency and voltage in the Au/(CdTe:PVA)/n-Si (MPS) structures

Güçlü Ç., ALTINDAL Ş., ULUSOY M., Tezcan A. E.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.18, 2024 (SCI-Expanded)

35. Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer

Bengi S., ÇETİNKAYA H. G., ALTINDAL Ş., DURMUŞ P.

Ionics , cilt.30, sa.6, ss.3651-3659, 2024 (SCI-Expanded)

36. Determining the dielectric characteristics of the Au/C20H12/n-Si (MPS) structure over a wide temperature and voltage

Bengi S., ALTINDAL Ş., Zeyrek S.

Indian Journal of Physics , cilt.98, sa.6, ss.2039-2046, 2024 (SCI-Expanded)

37. Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions

Alarabi A. A., Çiçek O., Makara H., Ünal F., Zurnacı M., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.14, 2024 (SCI-Expanded)

38. The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures

ÇETİNKAYA H. G., Bengi S., DURMUŞ P., Demirezen S., ALTINDAL Ş.

Silicon , cilt.16, sa.5, ss.2315-2322, 2024 (SCI-Expanded)

39. A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements

Güçlü Ç. Ş., ULUSOY M., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.12, 2024 (SCI-Expanded)

40. Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe:PVA via the admittance method

Guclu C. S., ALTINDAL Ş., ERBİLEN TANRIKULU E.

PHYSICA B-CONDENSED MATTER , cilt.677, 2024 (SCI-Expanded)

41. Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer

ERBİLEN TANRIKULU E., Berkün Ö., ULUSOY M., Avar B., Durmuş H., ALTINDAL Ş.

MATERIALS TODAY COMMUNICATIONS , cilt.38, 2024 (SCI-Expanded)

42. Optoelectric response of Schottky photodiode with a PVP: ZnTiO3 nanocomposite as an interfacial layer

Barkhordari A., Mashayekhi H. R., Amiri P., ALTINDAL Ş., Azizian-Kalandaragh Y.

Optical Materials , cilt.148, 2024 (SCI-Expanded)

43. Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

Güçlü Ç., Tanrıkulu E., ULUSOY M., Kalandargh Y. A., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.35, sa.5, 2024 (SCI-Expanded)

44. Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy

Yürekli M., ÖZDEMİR A. F., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.6, 2024 (SCI-Expanded)

45. The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures

ÇETİNKAYA H. G., Bengi S., SEVGİLİ Ö., ALTINDAL Ş.

Physica Scripta , cilt.99, sa.2, 2024 (SCI-Expanded)

46. High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S:DLC)/p-Si (MIS) structures

TATAROĞLU A., Durmuş H., Vahid A. F., Avar B., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.3, 2024 (SCI-Expanded)

47. The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface

Elamen H., Badali Y., ULUSOY M., AZIZIAN-KALANDARAGH Y., ALTINDAL Ş., Güneşer M. T.

Polymer Bulletin , cilt.81, sa.1, ss.403-422, 2024 (SCI-Expanded)

48. Thermal dependence on electrical characteristics of Au/(PVC:Sm2O3)/n-Si structure

BADALI Y., Altan H., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.3, 2024 (SCI-Expanded)

49. Machine learning approach for predicting electrical features of Schottky structures with graphene and ZnTiO3 nanostructures doped in PVP interfacial layer

Barkhordari A., Mashayekhi H. R., Amiri P., ÖZÇELİK S., ALTINDAL Ş., Azizian-Kalandaragh Y.

Scientific Reports , cilt.13, sa.1, 2023 (SCI-Expanded)

50. A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current-voltage (I-V) and impedance-voltage (Z-V) measurements

Güçlü Ç., Tanrıkulu E., Dere A., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.34, sa.28, 2023 (SCI-Expanded)

51. Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs

Dinçer A. S., Haliloğlu M. T., Toprak A., ALTINDAL Ş., Özbay E.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.23, 2023 (SCI-Expanded)

52. Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)

Barkhordari A., Mashayekhi H. R., Amiri P., ALTINDAL Ş., Azizian-Kalandaragh Y.

Semiconductor Science and Technology , cilt.38, sa.7, 2023 (SCI-Expanded)

53. Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact

Kaymaz A., Evcin Baydilli E., Tecimer H., Uslu Tecimer H., ALTINDAL Ş.

Materials Today Communications , cilt.35, 2023 (SCI-Expanded)

54. Frequency dependent electrical and dielectric properties of the Au/(RuO2:PVC)/n-Si (MPS) structures

Güneşer M. T., Elamen H., Badali Y., ALTINDAL Ş.

Physica B: Condensed Matter , cilt.657, 2023 (SCI-Expanded)

55. The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures

Feizollahi Vahid A., Alptekin S., Basman N., ULUSOY M., ŞAFAK ASAR Y., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.13, 2023 (SCI-Expanded)

56. The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures

Demirezen S., Arslan Alsaç A., ÇETİNKAYA H. G., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.14, 2023 (SCI-Expanded)

57. Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method

ŞAFAK ASAR Y., Feizollahi Vahid A., Basman N., ÇETİNKAYA H. G., ALTINDAL Ş.

Applied Physics A: Materials Science and Processing , cilt.129, sa.5, 2023 (SCI-Expanded)

58. Investigation of dielectric relaxation and ac conductivity in Au/(carbon nanosheet-PVP composite)/n-Si capacitors using impedance measurements

ŞAFAK ASAR Y., SEVGİLİ Ö., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.10, 2023 (SCI-Expanded)

59. On the investigation of frequency-dependent dielectric features in Schottky barrier diodes (SBDs) with polymer interfacial layer doped by graphene and ZnTiO3 nanostructures

Barkhordari A., Mashayekhi H., Amiri P., ALTINDAL Ş., Azizian-Kalandaragh Y.

Applied Physics A: Materials Science and Processing , cilt.129, sa.4, 2023 (SCI-Expanded)

60. Negative Capacitance Behavior at Low Frequencies of Nitrogen-Doped Polyethylenimine-Functionalized Graphene Quantum Dots-Based Structure

Berktaş Z., Orhan E., Ulusoy M., Yıldız M., Altındal Ş.

ACS Applied Electronic Materials , cilt.5, sa.3, ss.1804-1811, 2023 (SCI-Expanded) Sürdürülebilir Kalkınma

61. On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)

ÇETİNKAYA H. G., Feizollahi Vahid A., Basman N., Demirezen S., ŞAFAK ASAR Y., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.9, 2023 (SCI-Expanded)

62. The effect of (CeO2: PVC) thin interfacial film on the electrical features in Au/n-Si Schottky barrier diodes (SBDs) by using current–voltage measurements

Ganj T., Rozati S. M., Azizian-Kalandaragh Y., Pirgholi-Givi G., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.8, 2023 (SCI-Expanded)

63. The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure

AZIZIAN-KALANDARAGH Y., Badali Y., Jamshidi-Ghozlu M., Hanife F., ÖZÇELİK S., ALTINDAL Ş., et al.

Physica B: Condensed Matter , cilt.650, 2023 (SCI-Expanded)

64. Improvement of electric and photoelectric properties of the Al/n-ZnO/p-Si/Al photodiodes by green synthesis method using chamomille flower extract

Kırkbınar M., İbrahimoğlu E., Demir A., Çalışkan F., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.34, sa.3, 2023 (SCI-Expanded)

65. The Influence of PVC and (PVC:SnS) Interfacial Polymer Layers on the Electric and Dielectric Properties of Au/n-Si Structure

Barkhordari A., Altındal Ş., Pirgholi-Givi G., Mashayekhi H., Özçelik S., Azızıan-Kalandaragh Y.

SILICON , cilt.15, sa.2, ss.855-865, 2023 (SCI-Expanded)

66. 21.2mV/K High-Performance Ni_(50nm)-Au_(100nm)/Ga₂O₃/p-Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode

Cicek O., Arslan E., ALTINDAL Ş., Badali Y., Ozbay E.

IEEE Sensors Journal , cilt.22, sa.24, ss.23699-23704, 2022 (SCI-Expanded)

67. The effect of different rates of ultra-thin gossamer-like rGO coatings on photocatalytic performance in ZnO core-shell structures for optoelectronic applications

Kirkbinar M., DEMİR A., ALTINDAL Ş., Caliskan F.

DIAMOND AND RELATED MATERIALS , cilt.130, 2022 (SCI-Expanded)

68. The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

Durmuş H., Tataroğlu A., Altındal Ş., Yıldırım M.

Current Applied Physics , cilt.44, ss.85-89, 2022 (SCI-Expanded)

69. Vertical CdTe:PVP/p-Si - Based Temperature Sensor by Using Aluminum Anode Schottky Contact

ÇETİNKAYA H. G., Cicek O., ALTINDAL Ş., Badali Y., Demirezen S.

IEEE Sensors Journal , cilt.22, sa.23, ss.22391-22397, 2022 (SCI-Expanded)

70. Impact of p-type Semiconductor Substrate on the Transient Response of Metal-Semiconductor-Metal Photodetector

Barkhordari A., Mashayekhi H. R., ALTINDAL Ş., ÖZÇELİK S., AZIZIAN-KALANDARAGH Y.

Journal of Theoretical and Applied Physics , 2022 (Hakemli Dergi)

71. PEI N-doped graphene quantum dots/p-type silicon Schottky diode

Berktas Z., Yildiz M., Seven E., ORHAN E., ALTINDAL Ş.

FLATCHEM , cilt.36, 2022 (SCI-Expanded)

72. DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

Yilmaz D., Odabasi O., Salkim G., Urfali E., Akoglu B. C., ÖZBAY E., et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.37, sa.8, 2022 (SCI-Expanded)

73. All-Dielectric Fabry–Pérot Cavity Design for Spectrally Selective Mid-Infrared Absorption

Akin B., Linford M. R., Ahmadivand A., ALTINDAL Ş.

Physica Status Solidi (B) Basic Research , cilt.259, sa.3, 2022 (SCI-Expanded)

74. Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval

Tan S. O., ÇİÇEK O., Turk C. G., ALTINDAL Ş.

ENGINEERING SCIENCE AND TECHNOLOGY-AN INTERNATIONAL JOURNAL-JESTECH , cilt.27, 2022 (SCI-Expanded)

75. The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayer

Alsmael J. A. M., Tan S. O., Tecimer H. U., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.

IEEE TRANSACTIONS ON NANOTECHNOLOGY , cilt.21, ss.528-533, 2022 (SCI-Expanded)

76. Comparison of dielectric characteristics for metal-semiconductor structures fabricated with different interlayers thicknesses

Arslan B., Tan S. O., Tecimer H., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.22, ss.26700-26708, 2021 (SCI-Expanded)

77. On a numerical simulation of current-voltage features in wide range of temperature in metal/silicon Schottky diodes

Amiri P., ALTINDAL Ş.

Journal of Optoelectronics and Advanced Materials , cilt.23, sa.11-12, ss.605-611, 2021 (SCI-Expanded)

78. Frequency Response of Metal-Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique

Tan S. O., Tascioglu I., ALTINDAL Ş.

IEEE TRANSACTIONS ON ELECTRON DEVICES , cilt.68, sa.10, ss.5085-5089, 2021 (SCI-Expanded)

79. Evidences on double Gaussian (DG) distribution of barrier heights in Au/(PVA-Fe3O4)/n-Si Schottky barrier diodes (SBDs) from the current-voltage (I-V) measurements in wide temperature

ARSLAN ALSAÇ A., SERIN T., ALTINDAL Ş., KALANDARAGH Y.

Journal of Optoelectronics and Advanced Materials , cilt.23, sa.7-8, ss.339-347, 2021 (SCI-Expanded)

80. Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

Ulusan A. B., Tataroglu A., ALTINDAL Ş., Azizian-Kalandaragh Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.12, ss.15732-15739, 2021 (SCI-Expanded) Sürdürülebilir Kalkınma

81. Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures

Akbas A. M., TATAROĞLU A., ALTINDAL Ş., Azizian-Kalandaragh Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.6, ss.7657-7670, 2021 (SCI-Expanded)

82. The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K

Guclu C. S., Ozdemir A. F., Aldemir D. A., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.5, ss.5624-5634, 2021 (SCI-Expanded)

83. Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer

TATAROĞLU A., ALTINDAL Ş., Azizian-Kalandaragh Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.3, ss.3451-3459, 2021 (SCI-Expanded)

84. Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures

Akbas A. M., ÇİÇEK O., ALTINDAL Ş., Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics , cilt.32, sa.1, ss.993-1006, 2021 (SCI-Expanded)

85. Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures

Azizian-Kalandaragh Y., Yucedag I., Demir G. E., ALTINDAL Ş.

JOURNAL OF MOLECULAR STRUCTURE , cilt.1224, 2021 (SCI-Expanded)

86. On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80-360 K

Evcin Baydilli E., Kaymaz A., Uslu Tecimer H., Altindal Ş.

JOURNAL OF ELECTRONIC MATERIALS , cilt.49, sa.12, ss.7427-7434, 2020 (SCI-Expanded)

87. A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures

ÇİÇEK O., ALTINDAL Ş., Azizian-Kalandaragh Y.

IEEE Sensors Journal , cilt.20, sa.23, ss.14081-14089, 2020 (SCI-Expanded)

88. On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

Sabahi Namini A., Shahedi Asl M., Pirgholi-Givi G., Delbari S. A., Farazin J., ALTINDAL Ş., et al.

Applied Physics A: Materials Science and Processing , cilt.126, sa.12, 2020 (SCI-Expanded)

89. Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

Baydilli E. E., Tan S. O., Tecimer H. U., Altindal Ş.

PHYSICA B-CONDENSED MATTER , cilt.598, 2020 (SCI-Expanded)

90. Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes

Lapa H. E., KÖKCE A., ALDEMİR D. A., ÖZDEMİR A. F., ALTINDAL Ş.

INDIAN JOURNAL OF PHYSICS , cilt.94, sa.12, ss.1901-1908, 2020 (SCI-Expanded) Sürdürülebilir Kalkınma

91. The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer

Lapa H. E., KÖKCE A., ALDEMİR D. A., ÖZDEMİR A. F., ALTINDAL Ş.

PHYSICA SCRIPTA , cilt.95, sa.11, 2020 (SCI-Expanded) Sürdürülebilir Kalkınma

92. The possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctions

Elamen H., Badali Y., GÜNEŞER M. T., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.31, sa.21, ss.18640-18648, 2020 (SCI-Expanded)

93. Investigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature

Ersoz Demir G., Yucedag I., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.31, sa.19, ss.16324-16331, 2020 (SCI-Expanded)

94. The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)

Evcin Baydilli E., Altindal Ş., Tecimer H., Kaymaz A., Uslu Tecimer H.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.31, sa.20, ss.17147-17157, 2020 (SCI-Expanded)

95. On the frequency and voltage-dependent main electrical parameters of the Au/ZnO/n-GaAs structures at room temperature by using various methods

Akin B., ALTINDAL Ş.

PHYSICA B-CONDENSED MATTER , cilt.594, 2020 (SCI-Expanded)

96. A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer

Eroglu A., DEMİREZEN S., Azizian-Kalandaragh Y., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.31, sa.17, ss.14466-14477, 2020 (SCI-Expanded)

97. The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H-SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements

Al-Dharob M. H., KÖKCE A., ALDEMİR D. A., ÖZDEMİR A. F., ALTINDAL Ş.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS , cilt.144, 2020 (SCI-Expanded)

98. Electric and dielectric parameters in Au/n-Si (MS) capacitors with metal oxide-polymer interlayer as function of frequency and voltage

DEMİREZEN S., Eroglu A., Azizian-Kalandaragh Y., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.31, sa.18, ss.15589-15598, 2020 (SCI-Expanded)

99. Electrical and dielectric properties of Al/(PVP: Zn-TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements

Azizian-Kalandaragh Y., Farazin J., ALTINDAL Ş., Asl M. S., Pirgholi-Givi G., Delbari S. A., et al.

Applied Physics A: Materials Science and Processing , cilt.126, sa.8, 2020 (SCI-Expanded)

100. Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz

ALPTEKİN S., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.31, sa.16, ss.13337-13343, 2020 (SCI-Expanded)

101. Intersection behavior of the current-voltage (I-V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

Arslan E., Badali Y., ALTINDAL Ş., ÖZBAY E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.31, sa.16, ss.13167-13172, 2020 (SCI-Expanded)

102. A comparison study regarding Al/p-Si and Al/(carbon nanofiber–PVP)/p-Si diodes: current/impedance–voltage (I/Z–V) characteristics

SEVGİLİ Ö., YILDIRIM M., Azizian-Kalandaragh Y., ALTINDAL Ş.

Applied Physics A: Materials Science and Processing , cilt.126, sa.8, 2020 (SCI-Expanded) Sürdürülebilir Kalkınma

103. Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes

Tataroglu A., Altindal Ş., Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics , cilt.31, sa.14, ss.11665-11672, 2020 (SCI-Expanded)

104. Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO-PVA)/p-Si Schottky diodes using capacitance and conductance measurements

KAYMAZ A., Tecimer H. U., Baydilli E. E., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.31, sa.11, ss.8349-8358, 2020 (SCI-Expanded) Sürdürülebilir Kalkınma

105. Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer

Tascioglu I., SEVGİLİ Ö., Azizian-Kalandaragh Y., ALTINDAL Ş.

Journal of Electronic Materials , cilt.49, sa.6, ss.3720-3727, 2020 (SCI-Expanded)

106. Investigation of the effect of different Bi2O3–x:PVA (x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters

Badali Y., Azizian-Kalandaragh Y., USLU İ., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.31, sa.10, ss.8033-8042, 2020 (SCI-Expanded)

107. The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)

ALTINDAL Ş., Farazin J., Pirgholi-Givi G., MARIL E., Azizian-Kalandaragh Y.

Physica B: Condensed Matter , cilt.582, 2020 (SCI-Expanded)

108. Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage

Turk C. G., TAN S. O., ALTINDAL Ş., İNEM B.

PHYSICA B-CONDENSED MATTER , cilt.582, 2020 (SCI-Expanded)

109. C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure

Tataroglu A., Altindal Ş., Azizian-Kalandaragh Y.

Physica B: Condensed Matter , cilt.582, 2020 (SCI-Expanded)

110. Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method

Lapa H. E., KÖKCE A., ÖZDEMİR A. F., ALTINDAL Ş.

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS , cilt.234, sa.3, ss.505-516, 2020 (SCI-Expanded)

111. Ultrasound-Assisted Method for Preparation of Ag2S Nanostructures: Fabrication of Au/Ag2S-PVA/n-Si Schottky Barrier Diode and Exploring Their Electrical Properties

Badali Y., Azizian-Kalandaragh Y., Akhlaghi E. A., Altindal Ş.

Journal of Electronic Materials , cilt.49, sa.1, ss.444-453, 2020 (SCI-Expanded)

112. Identifying of series resistance and interface states on rhenium/n-GaAs structures using C-V-T and G/-V-T characteristics in frequency ranged 50 kHz to 5 MHz

ÇİÇEK O., DURMUŞ H., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.31, sa.1, ss.704-713, 2020 (SCI-Expanded)

113. Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer

TATAROĞLU A., ALTINDAL Ş., Azizian-Kalandaragh Y.

Physica B: Condensed Matter , cilt.576, 2020 (SCI-Expanded)

114. Determination of current transport and trap states density in AlInGaN/GaN heterostructures

Arslan E., Ural S., ALTINDAL Ş., ÖZBAY E.

MICROELECTRONICS RELIABILITY , cilt.103, 2019 (SCI-Expanded)

115. Investigation of the efficiencies of the (SnO2-PVA) interlayer in Au/n-Si (MS) SDs on electrical characteristics at room temperature by comparison

BİLKAN Ç., Azizian-Kalandaragh Y., SEVGİLİ Ö., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.30, sa.23, ss.20479-20488, 2019 (SCI-Expanded)

116. The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures

YÜKSELTÜRK E., ÇOTUK M., ZEYREK S., ALTINDAL Ş., BÜLBÜL M. M.

Materials Today: Proceedings , cilt.18, ss.1842-1851, 2019 (Hakemli Dergi)

117. On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures

YÜKSELTÜRK E., ZEYREK S., ALTINDAL Ş., BÜLBÜL M. M.

Materials Today: Proceedings , cilt.18, ss.1852-1860, 2019 (Hakemli Dergi)

118. Dielectric properties of Ag/Ru-0.03-PVA/n-Si structures

Badali Y., Kocyigit S., USLU İ., ALTINDAL Ş.

BULLETIN OF MATERIALS SCIENCE , cilt.42, sa.5, 2019 (SCI-Expanded)

119. Synthesis of boron and rare earth stabilized graphene doped polyvinylidene fluoride (PVDF) nanocomposite piezoelectric materials

Badali Y., Kocyigit S., Aytimur A., ALTINDAL Ş., USLU İ.

POLYMER COMPOSITES , cilt.40, sa.9, ss.3623-3633, 2019 (SCI-Expanded)

120. Dielectric characterization of BSA doped-PANI interlayered metal-semiconductor structures

KARAOĞLAN N., Tecimer H. U., ALTINDAL Ş., BİNDAL C.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.30, sa.15, ss.14224-14232, 2019 (SCI-Expanded)

121. Examination of dielectric response of Au/HgS-PVA/n-Si (MPS)structure by impedance spectroscopy method

SEVGİLİ Ö., Tascioglu I., Boughdachi S., Azizian-Kalandaragh Y., ALTINDAL Ş.

Physica B: Condensed Matter , cilt.566, ss.125-135, 2019 (SCI-Expanded)

122. A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures

Buyukbas-Ulusan A., Tascioglu I., Tataroglu A., Yakuphanoglu F., Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.30, sa.13, ss.12122-12129, 2019 (SCI-Expanded)

123. The Structural and Electrical Properties of the Au/n-Si (MS) Diodes with Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method

Altindal Ş., Sevgili O., Azizian-Kalandaragh Y.

IEEE Transactions on Electron Devices , cilt.66, sa.7, ss.3103-3109, 2019 (SCI-Expanded)

124. The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors

Demirezen S., Tanrikulu E., Altindal Ş.

INDIAN JOURNAL OF PHYSICS , cilt.93, sa.6, ss.739-747, 2019 (SCI-Expanded)

125. Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure

Tascioglu I., Tan S. O., Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.30, sa.12, ss.11536-11541, 2019 (SCI-Expanded)

126. Fabrication, structural and electrical characterization of Au/ (CuSe-polyvinyl alcohol)/n-Si (MPS) Schottky barrier structures

Mirzanezhad-Asl R., Phirouznia A., Altindal Ş., Badali Y., Azizian-Kalandaragh Y.

Physica B: Condensed Matter , cilt.561, ss.1-8, 2019 (SCI-Expanded)

127. The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics

ÇETİNKAYA H. G., SEVGİLİ Ö., ALTINDAL Ş.

PHYSICA B-CONDENSED MATTER , cilt.560, ss.91-96, 2019 (SCI-Expanded)

128. On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K

DURMUŞ H., YILDIRIM M., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.30, sa.9, ss.9029-9037, 2019 (SCI-Expanded)

129. A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer

ALPTEKİN S., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.30, sa.7, ss.6491-6499, 2019 (SCI-Expanded) Sürdürülebilir Kalkınma

130. Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer

Arslan E., ALTINDAL Ş., Ural S., Kayal O. A., Ozturk M., ÖZBAY E.

JOURNAL OF ELECTRONIC MATERIALS , cilt.48, sa.2, ss.887-897, 2019 (SCI-Expanded)

131. Determination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structure

ALPTEKİN S., TAN S. O., ALTINDAL Ş.

IEEE TRANSACTIONS ON NANOTECHNOLOGY , cilt.18, ss.1196-1199, 2019 (SCI-Expanded)

132. Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Guclu C. S., Ozdemir A. F., Karabulut A., Kokce A., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.89, ss.26-31, 2019 (SCI-Expanded)

133. A comparison of electrical parameters of Au/n-Si and Au/(CoSO 4 –PVP)/n-Si structures (SBDs) to determine the effect of (CoSO 4 –PVP) organic interlayer at room temperature

ALTINDAL Ş., Sevgili O., Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics , 2019 (SCI-Expanded)

134. Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K

Boughdachi S., Badali Y., Azizian-Kalandaragh Y., Altindal Ş.

Journal of Electronic Materials , cilt.47, sa.12, ss.6945-6953, 2018 (SCI-Expanded)

135. Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures

Demir G. E., Yucedag I., Azizian-Kalandaragh Y., ALTINDAL Ş.

Journal of Electronic Materials , cilt.47, sa.11, ss.6600-6606, 2018 (SCI-Expanded)

136. Formation of ZnO nanopowders by the simple ultrasound-assisted method: Exploring the dielectric and electric properties of the Au/(ZnO-PVA)/n-Si structure

Nezhadesm-Kohardafchahi S., Farjami-Shayesteh S., Badali Y., Altindal Ş., Jamshidi-Ghozlu M. A., Azizian-Kalandaragh Y.

Materials Science in Semiconductor Processing , cilt.86, ss.173-180, 2018 (SCI-Expanded)

137. Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

Arslan E., ALTINDAL Ş., Ural S., Kayal O. A., Ozturk M., ÖZBAY E.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , cilt.36, sa.6, 2018 (SCI-Expanded)

138. Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures

Akhlaghi E. A., Badali Y., ALTINDAL Ş., Azizian-Kalandaragh Y.

Physica B: Condensed Matter , cilt.546, ss.93-98, 2018 (SCI-Expanded)

139. Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer

Tascioglu I., TAN S. O., YAKUPHANOĞLU F., ALTINDAL Ş.

JOURNAL OF ELECTRONIC MATERIALS , cilt.47, sa.10, ss.6059-6066, 2018 (SCI-Expanded)

140. The investigation of current-conduction mechanisms (CCMs) in Au/(0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements

Al-Dharob M. H., Lapa H. E., Kokce A., Ozdemir A. F., ALDEMİR D. A., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.85, ss.98-105, 2018 (SCI-Expanded)

141. Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

Tecimer H. U., Alper M. A., Tecimer H., Tan S. O., Altindal Ş.

POLYMER BULLETIN , cilt.75, sa.9, ss.4257-4271, 2018 (SCI-Expanded)

142. Evaluation of Electric and Dielectric Properties of Metal-Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer

MARIL E., TAN S. O., ALTINDAL Ş., USLU İ.

IEEE TRANSACTIONS ON ELECTRON DEVICES , cilt.65, sa.9, ss.3901-3908, 2018 (SCI-Expanded)

143. Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage

BARAZ N., Yucedag I., Azizian-Kalandaragh Y., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.29, sa.15, ss.12735-12743, 2018 (SCI-Expanded)

144. Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures

Badali Y., Nikravan A., ALTINDAL Ş., USLU İ.

JOURNAL OF ELECTRONIC MATERIALS , cilt.47, sa.7, ss.3510-3520, 2018 (SCI-Expanded)

145. Preparation of (CuS–PVA) interlayer and the investigation their structural, morphological and optical properties and frequency dependent electrical characteristics of Au/(CuS–PVA)/n-Si (MPS) structures

ERBİLEN TANRIKULU E., ALTINDAL Ş., Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics , cilt.29, sa.14, ss.11801-11811, 2018 (SCI-Expanded)

146. Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures

Badali Y., ALTINDAL Ş., USLU İ.

PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL , cilt.28, sa.3, ss.325-331, 2018 (SCI-Expanded)

147. A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

Lapa H. E., KÖKCE A., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.

BULLETIN OF MATERIALS SCIENCE , cilt.41, sa.3, 2018 (SCI-Expanded)

148. Self-assembled patches in PtSi/n-Si (111) diodes

Afandiyeva I. M., Altindal Ş., Abdullayeva L. K., Bayramova A. I.

JOURNAL OF SEMICONDUCTORS , cilt.39, sa.5, 2018 (ESCI)

149. Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires

Kaya A., Polat K. G., Mayet A. S., Mao H., ALTINDAL Ş., Islam M. S.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.75, ss.124-129, 2018 (SCI-Expanded) Sürdürülebilir Kalkınma

150. On the anomalous peak and negative capacitance in the capacitance-voltage (C-V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure

Tanrikulu E., Demirezen S., Altindal Ş., Uslu I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.29, sa.4, ss.2890-2898, 2018 (SCI-Expanded)

151. Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes

Badrinezhad L., BİLKAN Ç., Azizian-Kalandaragh Y., Nematollahzadeh A., Orak I., ALTINDAL Ş.

International Journal of Modern Physics B , cilt.32, sa.1, 2018 (SCI-Expanded)

152. The Effect of Modified PVA Interfacial Layer Doped by Zn Nanoparticles on the Electrical Parameters of Au/N-4H Sic (MS) Structures

AlDharob M. H., KÖKCE A., Lapa H. E., ÖZDEMİR A. F., ALTINDAL Ş.

Polymer Sciences , cilt.4, sa.1, 2018 (Hakemli Dergi)

153. On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics

Ulusan A. B., TATAROĞLU A., Azizian-Kalandaragh Y., Altindal Ş.

Journal of Materials Science: Materials in Electronics , cilt.29, sa.1, ss.159-170, 2018 (SCI-Expanded)

154. Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures

Cetinkaya H. G., Yildirim M., Durmus P., Altindal Ş.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.728, ss.896-901, 2017 (SCI-Expanded)

155. Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity

Cetinkaya H. G., Yildirim M., Durmus P., Altindal Ş.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.721, ss.750-756, 2017 (SCI-Expanded)

156. Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room

Lapa H. E., KÖKCE A., Al-Dharob M., Orak I., ÖZDEMİR A. F., ALTINDAL Ş.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.80, sa.1, 2017 (SCI-Expanded)

157. Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer

DURMUŞ P., ALTINDAL Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.31, sa.27, 2017 (SCI-Expanded)

158. On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage

Nikravan A., Badali Y., ALTINDAL Ş., Uslu İ., Orak I.

JOURNAL OF ELECTRONIC MATERIALS , cilt.46, sa.10, ss.5728-5736, 2017 (SCI-Expanded)

159. The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature

Demirezen S., Kaya A., Altindal Ş., Uslu I.

POLYMER BULLETIN , cilt.74, sa.9, ss.3765-3781, 2017 (SCI-Expanded)

160. Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature

Demirezen S., Orak I., Azizian-Kalandaragh Y., Altindal Ş.

Journal of Materials Science: Materials in Electronics , cilt.28, sa.17, ss.12967-12976, 2017 (SCI-Expanded)

161. Controlling the electrical characteristics of Au/n-Si structure with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature

BARAZ N., Yucedag I., DEMİR A., Ersoez G., ALTINDAL Ş., KANDAZ M.

POLYMERS FOR ADVANCED TECHNOLOGIES , cilt.28, sa.8, ss.952-957, 2017 (SCI-Expanded)

162. On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes

Bilkan C., Badali Y., Fotouhi-Shablou S., Azizian-Kalandaragh Y., Altindal Ş.

Applied Physics A: Materials Science and Processing , cilt.123, sa.8, 2017 (SCI-Expanded)

163. Investigation of frequency and voltage dependence surface states and series resistance profiles using admittance measurements in Al/p-Si with Co3O4-PVA interlayer structures

BİLKAN Ç., ALTINDAL Ş., Azizian-Kalandaragh Y.

Physica B: Condensed Matter , cilt.515, ss.28-33, 2017 (SCI-Expanded)

164. Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer

Cetinkaya H. G., Altindal Ş., Orak I., Uslu I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.28, sa.11, ss.7905-7911, 2017 (SCI-Expanded)

165. Investigation of the C-V characteristics that provides linearity in a large reverse bias region and the effects of series resistance, surface states and interlayer in Au/n-Si/Ag diodes

BİLKAN Ç., ALTINDAL Ş.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.708, ss.464-469, 2017 (SCI-Expanded)

166. Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes

Ersoz G., Yucedag I., Bayrakdar S., ALTINDAL Ş., Gumus A.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.28, sa.9, ss.6413-6420, 2017 (SCI-Expanded)

167. Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

Tascioglu I., ÖZMEN Ö. T., Sagban H. M., Yaglioglu E., Altindal Ş.

JOURNAL OF ELECTRONIC MATERIALS , cilt.46, sa.4, ss.2379-2386, 2017 (SCI-Expanded)

168. Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures

Cicek O., Tecimer H. U., Tan S. O., Tecimer H., Orak I., Altindal Ş.

COMPOSITES PART B-ENGINEERING , cilt.113, ss.14-23, 2017 (SCI-Expanded)

169. Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

Moraki K., Bengi S., Zeyrek S., Bulbul M. M., Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.28, sa.5, ss.3987-3996, 2017 (SCI-Expanded)

170. Frequency dependent C-V and G/omega-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes

Tan S. O., Tecimer H. U., Cicek O., Tecimer H., Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.28, sa.6, ss.4951-4957, 2017 (SCI-Expanded)

171. Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

Yildirim M., Sahin C., Altindal Ş., Durmus P.

JOURNAL OF ELECTRONIC MATERIALS , cilt.46, sa.3, ss.1895-1901, 2017 (SCI-Expanded)

172. Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures

BARAZ N., Yucedag I., Azizian-Kalandaragh Y., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.28, sa.2, ss.1315-1321, 2017 (SCI-Expanded)

173. Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)type Schottky barrier diodes in wide temperature range

Guclu C. S., ÖZDEMİR A. F., ALTINDAL Ş.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.122, sa.12, 2016 (SCI-Expanded)

174. Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co3O4-PVA/p-Si structures

BİLKAN Ç., Azizian-Kalandaragh Y., ALTINDAL Ş., Shokrani-Havigh R.

Physica B: Condensed Matter , cilt.500, ss.154-160, 2016 (SCI-Expanded)

175. A Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si/ and Au/Biphenylsubs-CoPc/n-Si/ Type Schottky Barrier Diodes

DEMİR A., Yucedag I., Ersoz G., ALTINDAL Ş., BARAZ N., KANDAZ M.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , cilt.11, sa.5, ss.620-625, 2016 (SCI-Expanded)

176. Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO2/n-4H-SiC Structure

Alialy S., Yildiz D. E., Altindal Ş.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , cilt.11, sa.5, ss.626-630, 2016 (SCI-Expanded)

177. Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions

Cicek O., Tecimer H. U., Tan S. O., Tecimer H., Altindal Ş., Uslu I.

COMPOSITES PART B-ENGINEERING , cilt.98, ss.260-268, 2016 (SCI-Expanded) Sürdürülebilir Kalkınma

178. Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities

Tan S. O., Tecimer H. U., Cicek O., Tecimer H., Orak I., Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.27, sa.8, ss.8340-8347, 2016 (SCI-Expanded)

179. Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3 Interfacial Layer at Room Temperature

Guclu C. S., Ozdemir A. F., Kokce A., Altindal Ş.

ACTA PHYSICA POLONICA A , cilt.130, sa.1, ss.325-330, 2016 (SCI-Expanded)

180. Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method

Ersoz G., Yucedag I., Azizian-Kalandaragh Y., Orak I., ALTINDAL Ş.

IEEE Transactions on Electron Devices , cilt.63, sa.7, ss.2948-2955, 2016 (SCI-Expanded)

181. A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer

Kaya A., Cetinkaya H. G., Altindal Ş., Uslu I.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.30, sa.16, 2016 (SCI-Expanded)

182. The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature

Kaya A., Maril E., Altindal Ş., Uslu I.

MICROELECTRONIC ENGINEERING , cilt.149, ss.166-171, 2016 (SCI-Expanded)

183. On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure

Maril E., Kaya A., Cetinkaya H. G., Kocyigit S., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.39, ss.332-338, 2015 (SCI-Expanded)

184. Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage

Cetinkaya H. G., Kaya A., Altindal Ş., Kocyigit S.

CANADIAN JOURNAL OF PHYSICS , cilt.93, sa.10, ss.1213-1220, 2015 (SCI-Expanded)

185. Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes

Tanrikulu E., Yildiz D. E., Gunen A., Altindal Ş.

PHYSICA SCRIPTA , cilt.90, sa.9, 2015 (SCI-Expanded)

186. Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes

Gumus A., Ersoz G., Yucedag I., Bayrakdar S., ALTINDAL Ş.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY , cilt.67, sa.5, ss.889-895, 2015 (SCI-Expanded)

187. Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage

Yucedag I., Ersoz G., Gumus A., ALTINDAL Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.29, sa.13, 2015 (SCI-Expanded)

188. Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis

Cetinkaya H. G., Alialy S., Altindal Ş., Kaya A., Uslu I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.26, sa.5, ss.3186-3195, 2015 (SCI-Expanded)

189. The effect of Mo-doped PVC plus TCNQ interfacial layer on the electrical properties of Au/PVC plus TCNQ/p-Si structures at room temperature

Demirezen S., Kaya A., Vural O., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.33, ss.140-148, 2015 (SCI-Expanded)

190. Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range

Alialy S., Kaya A., Maril E., Altindal Ş., Uslu I.

PHILOSOPHICAL MAGAZINE , cilt.95, sa.13, ss.1448-1461, 2015 (SCI-Expanded)

191. On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature

Yucedag I., Kaya A., Altindal Ş.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , cilt.10, sa.2, ss.173-178, 2015 (SCI-Expanded)

192. A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current-voltage (I-V) and capacitance-voltage (C-V) measurements

Bilkan C., Zeyrek S., San S. E., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.32, ss.137-144, 2015 (SCI-Expanded)

193. Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

ŞAFAK ASAR Y., ASAR T., ALTINDAL Ş., ÖZÇELİK S.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.628, ss.442-449, 2015 (SCI-Expanded)

194. On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80-340 K

Maril E., Kaya A., Kocyigit S., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.31, ss.256-261, 2015 (SCI-Expanded)

195. Current-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes

Kaya A., Sevgili O., Altindal Ş., Ozturk M. K.

INDIAN JOURNAL OF PURE & APPLIED PHYSICS , cilt.53, sa.1, ss.56-65, 2015 (SCI-Expanded)

196. Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures

ŞAFAK ASAR Y., ASAR T., ALTINDAL Ş., ÖZÇELİK S.

PHILOSOPHICAL MAGAZINE , cilt.95, sa.26, ss.2885-2898, 2015 (SCI-Expanded)

197. On the negative capacitance behavior in the forward bias of Au/n-4H-SiC (MS) and comparison between MS and Au/TiO2/n-4H-SiC (MIS) type diodes both in dark and under 200 W illumination intensity

Cetinkaya H. G., Yildiz D. E., Altindal Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.29, sa.1, 2015 (SCI-Expanded)

198. Electrical and dielectric properties and intersection behavior of G/omega-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature

Yucedag I., Kaya A., ALTINDAL Ş., USLU İ.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY , cilt.65, sa.12, ss.2082-2089, 2014 (SCI-Expanded)

199. Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K

Gumus A., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.28, ss.66-71, 2014 (SCI-Expanded)

200. Electrical Characteristics of Au/PVA (x-doped)/n-Si: Comparison Study on the Effect of Dopant Type in PVA

Dökme İ., Altındal Ş.

FIBERS AND POLYMERS , cilt.15, ss.2253-2259, 2014 (SCI-Expanded)

201. On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC plus TCNQ)/p-Si structures

Yucedag I., Kaya A., Altindal Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.28, sa.23, 2014 (SCI-Expanded)

202. Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C f and G f Measurements

Parlaktürk F., Agasiev A., TATAROĞLU A., ALTINDAL Ş.

Gazi University Journal of Science , cilt.27, ss.909-915, 2014 (Scopus)

203. Investigation of Current-Voltage Characteristics and Current Conduction Mechanisms in Composites of Polyvinyl Alcohol and Bismuth Oxide

YILDIRIM M., GÖKÇEN M., TUNÇ T., USLU İ., ALTINDAL Ş.

POLYMER ENGINEERING AND SCIENCE , cilt.54, sa.8, ss.1811-1816, 2014 (SCI-Expanded)

204. Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

Alialy S., Altindal Ş., Tanrikulu E., Yildiz D. E.

JOURNAL OF APPLIED PHYSICS , cilt.116, sa.8, 2014 (SCI-Expanded)

205. The effect of frequency and temperature on capacitance/conductance-voltage (C/G-V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs)

Demirezen S., Ozavci E., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.23, ss.1-6, 2014 (SCI-Expanded)

206. Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method

Kaya A., Sevgili O., Altindal Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.28, sa.17, 2014 (SCI-Expanded)

207. The current-voltage and capacitance-voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

Ozerli H., Karteri I., KARATAŞ Ş., ALTINDAL Ş.

MATERIALS RESEARCH BULLETIN , cilt.53, ss.211-217, 2014 (SCI-Expanded)

208. Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

Yucedag I., Kaya A., ALTINDAL Ş., USLU İ.

CHINESE PHYSICS B , cilt.23, sa.4, 2014 (SCI-Expanded)

209. Dielectric and optical properties of CdS-polymer nanocomposites prepared by the successive ionic layer adsorption and reaction (SILAR) method

Azizian-Kalandaragh Y., AYDEMİR U., ALTINDAL Ş.

Journal of Electronic Materials , cilt.43, sa.4, ss.1226-1231, 2014 (SCI-Expanded)

210. Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes

Tascioglu I., Farooq W. A., TURAN R., ALTINDAL Ş., YAKUPHANOĞLU F.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.590, ss.157-161, 2014 (SCI-Expanded)

211. On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)

Tecimer H., Uslu H., Alahmed Z. A., Yakuphanoglu F., Altindal Ş.

COMPOSITES PART B-ENGINEERING , cilt.57, ss.25-30, 2014 (SCI-Expanded)

212. Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

Kaya A., Zeyrek S., SAN S. E., Altindal Ş.

CHINESE PHYSICS B , cilt.23, sa.1, 2014 (SCI-Expanded)

213. A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes

AYDEMİR U., Tascioglu I., ALTINDAL Ş., USLU İ.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.16, sa.6, ss.1865-1872, 2013 (SCI-Expanded)

214. Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer

Durmus P., Yildirim M., Altindal Ş.

CURRENT APPLIED PHYSICS , cilt.13, sa.8, ss.1630-1636, 2013 (SCI-Expanded)

215. Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p-Si and Al/Bi4Ti3O12/p-Si structures by using the admittance spectroscopy method

YILDIRIM M., DURMUŞ P., ALTINDAL Ş.

CHINESE PHYSICS B , cilt.22, sa.10, 2013 (SCI-Expanded)

216. The effect of series resistance and interface states on the frequency dependent C-V and G/w-V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes

Zeyrek S., Acaroglu E., Altindal Ş., Birdogan S., Bulbul M. M.

CURRENT APPLIED PHYSICS , cilt.13, sa.7, ss.1225-1230, 2013 (SCI-Expanded)

217. Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)

Tecimer H., Turut A., Uslu H., Altindal Ş., Uslu I.

SENSORS AND ACTUATORS A-PHYSICAL , cilt.199, ss.194-201, 2013 (SCI-Expanded)

218. Dielectric Permittivity AC Conductivity and Electric Modulus Properties of Metal Ferroelectric Semiconductor MFS Structures

Parlaktürk F., Agasiev A., TATAROĞLU A., ALTINDAL Ş.

Gazi University Journal of Science , cilt.26, ss.501-508, 2013 (Scopus)

219. The effect of metal work function on the barrier height of metal/CdS/SnO2/In-Ga structures

Tascioglu I., ALTINDAL Ş., POLAT İ., BACAKSIZ E.

CURRENT APPLIED PHYSICS , cilt.13, sa.7, ss.1306-1310, 2013 (SCI-Expanded)

220. Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures

Cetinkaya H. G., Tecimer H., Uslu H., Altindal Ş.

CURRENT APPLIED PHYSICS , cilt.13, sa.6, ss.1150-1156, 2013 (SCI-Expanded) Sürdürülebilir Kalkınma

221. The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range

Korucu D., TÜRÜT A., ALTINDAL Ş.

CURRENT APPLIED PHYSICS , cilt.13, sa.6, ss.1101-1108, 2013 (SCI-Expanded)

222. Trapping levels in TlGaSe2 single crystals

Ozdemir S., ALTINDAL Ş.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.566, ss.108-111, 2013 (SCI-Expanded)

223. Frequency and Voltage Dependence of Dielectric Loss of MgB2 Composites at Different Temperatures

Korucu D., Ertekin E., BELENLİ İ., ALTINDAL Ş.

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM , cilt.26, sa.6, ss.2165-2170, 2013 (SCI-Expanded)

224. A detailed study on current-voltage characteristics of Au/n-GaAs in wide temperature range

Ozavci E., Demirezen S., AYDEMİR U., Altindal Ş.

SENSORS AND ACTUATORS A-PHYSICAL , cilt.194, ss.259-268, 2013 (SCI-Expanded)

225. A study of polymer-derived erbia-doped Bi2O3 nanocrystalline ceramic powders

Aytimur A., Tascioglu I., ARI M., USLU İ., DAĞDEMİR Y., Durmus S., et al.

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY , cilt.66, sa.2, ss.317-323, 2013 (SCI-Expanded)

226. Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Korucu D., Turut A., TURAN R., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.16, sa.2, ss.344-351, 2013 (SCI-Expanded)

227. Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier

Afandiyeva I. M., Demirezen S., Altindal Ş.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.552, ss.423-429, 2013 (SCI-Expanded)

228. Two diodes model and illumination effect on the forward and reverse bias I-V and C-V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature

Demirezen S., Altindal Ş., Uslu I.

CURRENT APPLIED PHYSICS , cilt.13, sa.1, ss.53-59, 2013 (SCI-Expanded)

229. On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity in Al/SiO2/p-Si (MOS) Capacitors

Kaya A., ALTINDAL Ş., ŞAFAK ASAR Y., Sonmez Z.

CHINESE PHYSICS LETTERS , cilt.30, sa.1, 2013 (SCI-Expanded)

230. The Main Electrical and Interfacial Properties of Benzotriazole and Fluorene Based Organic Devices

YILDIZ D. E., Apaydin D. H., Kaya E., ALTINDAL Ş., ÇIRPAN A.

JOURNAL OF MACROMOLECULAR SCIENCE PART A-PURE AND APPLIED CHEMISTRY , cilt.50, sa.2, ss.168-174, 2013 (SCI-Expanded)

231. Temperature dependent conductivity and structural properties of sol-gel prepared holmium doped Bi2O3 nanoceramic powder

Tascioglu I., Ari M., Uslu I., Kocyigit S., Dagdemir Y., Corumlu V., et al.

CERAMICS INTERNATIONAL , cilt.38, sa.8, ss.6455-6460, 2012 (SCI-Expanded) Sürdürülebilir Kalkınma

232. Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode

Tascioglu I., SOYLU M., ALTINDAL Ş., Al-Ghamdi A. A., Yakuphanoglu F.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.541, ss.462-467, 2012 (SCI-Expanded)

233. Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K

Korucu D., Efeoglu H., Turut A., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.15, sa.5, ss.480-485, 2012 (SCI-Expanded)

234. Schottky diode properties of CuInSe2 films prepared by a two-step growth technique

Tecimer H., Aksu S., Uslu H., Atasoy Y., Bacaksiz E., Altindal Ş.

SENSORS AND ACTUATORS A-PHYSICAL , cilt.185, ss.73-81, 2012 (SCI-Expanded)

235. On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique

Korucu D., Turut A., TURAN R., Altindal Ş.

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY , cilt.55, sa.9, ss.1604-1612, 2012 (SCI-Expanded)

236. The effects of temperature, radiation, and illumination on current-voltage characteristics of Au/PVA(Co, Zn-doped)/n-Si Schottky diodes

DÖKME İ., ALTINDAL Ş., USLU İ.

JOURNAL OF APPLIED POLYMER SCIENCE , cilt.125, sa.2, ss.1185-1192, 2012 (SCI-Expanded)

237. The effect of gamma irradiation on electrical and dielectric properties of Al-TiW-Pd2Si/n-Si Schottky diode at room temperature

DÖKME İ., ALTINDAL Ş.

CURRENT APPLIED PHYSICS , cilt.12, sa.3, ss.860-864, 2012 (SCI-Expanded)

238. Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier

Afandiyeva I. M., Bulbul M. M., Altindal Ş., Bengi S.

MICROELECTRONIC ENGINEERING , cilt.93, ss.50-55, 2012 (SCI-Expanded)

239. Structural and electrical characterization of rectifying behavior in n-type/intrinsic ZnO-based homojunctions

Yilmaz S., POLAT İ., ALTINDAL Ş., BACAKSIZ E.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , cilt.177, sa.8, ss.588-593, 2012 (SCI-Expanded)

240. The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature

Uslu H., YILDIRIM M., ALTINDAL Ş., DURMUŞ P.

RADIATION PHYSICS AND CHEMISTRY , cilt.81, sa.4, ss.362-369, 2012 (SCI-Expanded)

241. Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

Gokcen M., Tunc T., Altindal Ş., Uslu I.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , cilt.177, sa.5, ss.416-420, 2012 (SCI-Expanded)

242. Does fludarabine increase the incidence of sinusoidal obstruction syndrome when combined with Bu/Cy during conditioning?

Suyani E., Altindal Ş., Aki S. Z., Sucak G. T.

CLINICAL TRANSPLANTATION , cilt.26, sa.2, 2012 (SCI-Expanded)

243. On the temperature dependent dielectric properties, conductivity and resistivity of MIS structures at 1 MHz

Eroglu A., TATAROĞLU A., Altindal Ş.

MICROELECTRONIC ENGINEERING , cilt.91, ss.154-158, 2012 (SCI-Expanded)

244. The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)

Gokcen M., Tunc T., Altindal Ş., Uslu I.

CURRENT APPLIED PHYSICS , cilt.12, sa.2, ss.525-530, 2012 (SCI-Expanded)

245. Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer

Dökme İ., Yıldız D. E., Altındal Ş.

ADVANCES IN POLYMER TECHNOLOGY , cilt.31, ss.63-70, 2012 (SCI-Expanded)

246. Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics

VURAL Ö., ŞAFAK ASAR Y., Turut A., ALTINDAL Ş.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.513, ss.107-111, 2012 (SCI-Expanded)

247. On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode

ŞAFAK ASAR Y., SOYLU M., YAKUPHANOĞLU F., ALTINDAL Ş.

JOURNAL OF APPLIED PHYSICS , cilt.111, sa.3, 2012 (SCI-Expanded)

248. Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures

Gokcen M., Altuntas H., Altindal Ş., Ozcelik S.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.15, sa.1, ss.41-46, 2012 (SCI-Expanded)

249. Effect of series resistance and interface states on the I-V, C-V and G/omega-V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature

Demirezen S., Sonmez Z., AYDEMİR U., Altindal Ş.

CURRENT APPLIED PHYSICS , cilt.12, sa.1, ss.266-272, 2012 (SCI-Expanded)

250. The density of interface states and their relaxation times in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

Bulbul M. M., Altindal Ş., Parlakturk F., TATAROĞLU A.

SURFACE AND INTERFACE ANALYSIS , cilt.43, sa.13, ss.1561-1565, 2011 (SCI-Expanded)

251. On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods

Demirezen S., Altindal Ş., Ozcelik S., Ozbay E.

MICROELECTRONICS RELIABILITY , cilt.51, sa.12, ss.2153-2162, 2011 (SCI-Expanded)

252. Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer

Gokcen M., Altindal Ş., Karaman M., AYDEMİR U.

PHYSICA B-CONDENSED MATTER , cilt.406, sa.21, ss.4119-4123, 2011 (SCI-Expanded)

253. Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al-TiW-Pd2Si/n-Si Schottky Device at Two Frequencies

DÖKME İ., ALTINDAL Ş.

IEEE TRANSACTIONS ON ELECTRON DEVICES , cilt.58, sa.11, ss.4042-4048, 2011 (SCI-Expanded)

254. Comparison of Pre- and Post-therapy 18F-FDG PET/CT Findings with The Findings of Clinical Follow-up in Patients with Hodgkin Lymphoma

Akdemir Ü. Ö., Kapucu L. Ö., Oz O., Suyani E., Tonyali O., Altindal Ş., et al.

EUROPEAN JOURNAL OF NUCLEAR MEDICINE AND MOLECULAR IMAGING , cilt.38, 2011 (SCI-Expanded)

255. Negative Dielectric Constant and Electrical Conductivity of Au/n-Si (111) Schottky Barrier Diodes with PVA/Ni,Zn Interfacial Layer

Tunc T., Dokme İ., Altindal Ş., Uslu I.

JOURNAL OF APPLIED POLYMER SCIENCE , cilt.122, sa.1, ss.265-272, 2011 (SCI-Expanded)

256. Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer

Altuntas H., Altindal Ş., Corekci S., Ozturk M. K., Ozcelik S.

SEMICONDUCTORS , cilt.45, sa.10, ss.1286-1290, 2011 (SCI-Expanded)

257. Preparation and Dielectric Properties of Polyvinyl Alcohol (Co, Zn Acetate) Fiber/n-Si and Polyvinyl Alcohol (Ni, Zn Acetate)/n-Si Schottky Diodes

TUNÇ T., Uslu H., ALTINDAL Ş.

FIBERS AND POLYMERS , cilt.12, sa.7, ss.886-892, 2011 (SCI-Expanded)

258. FUZZY CONTROL OF SEMI-BATCH POLYMERIZATION REACTOR WITH GENETIC ALGORITHM

ALTINTEN A., Altindal Ş., Erdogan S., HAPOĞLU H.

JOURNAL OF THE FACULTY OF ENGINEERING AND ARCHITECTURE OF GAZI UNIVERSITY , cilt.26, sa.3, ss.613-621, 2011 (SCI-Expanded)

259. Effect of Vanadium Substitution on the Dielectric Properties of Glass Ceramic Bi-2212 Superconductor

Cavdar Ş., KORALAY H., Altindal Ş.

JOURNAL OF LOW TEMPERATURE PHYSICS , cilt.164, ss.102-114, 2011 (SCI-Expanded)

260. Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Tunç T., Altındal Ş., Uslu İ., Dökme İ., Uslu H.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.14, sa.2, ss.139-145, 2011 (SCI-Expanded)

261. On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures

Uslu H., ALTINDAL Ş., POLAT İ., Bayrak H., BACAKSIZ E.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.509, sa.18, ss.5555-5561, 2011 (SCI-Expanded)

262. Effects of illumination on I-V, C-V and G/w-V characteristics of Au/n-CdTe Schottky barrier diodes

Kanbur H., Altindal Ş., Mammadov T., Safak Y.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.13, ss.713-718, 2011 (SCI-Expanded)

263. The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures

ALTINDAL Ş., Uslu H.

JOURNAL OF APPLIED PHYSICS , cilt.109, sa.7, 2011 (SCI-Expanded)

264. The Illumination Intensity and Applied Bias Voltage on Dielectric Properties of Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes

Uslu H., ALTINDAL Ş., TUNÇ T., Uslu I., Mammadov T. S.

JOURNAL OF APPLIED POLYMER SCIENCE , cilt.120, sa.1, ss.322-328, 2011 (SCI-Expanded)

265. Analysis of the forward and reverse bias I-V characteristics on Au/PVA: Zn/n-Si Schottky barrier diodes in the wide temperature range

Tascioglu I., AYDEMİR U., ALTINDAL Ş., KINACI B., ÖZÇELİK S.

JOURNAL OF APPLIED PHYSICS , cilt.109, sa.5, 2011 (SCI-Expanded)

266. The Gaussian distribution of barrier height in Au/n-GaAs Schottky diodes at high temperatures

TATAROĞLU A., Altindal Ş., Pur F. Z., Ataseven T., Sezgin S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.5, ss.438-442, 2011 (SCI-Expanded)

267. The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices

DÖKME İ., Tunc T., Uslu I., Altindal Ş.

SYNTHETIC METALS , cilt.161, ss.474-480, 2011 (SCI-Expanded)

268. On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Tekeli Z., Gokcen M., Altindal Ş., Ozcelik S., Ozbay E.

MICROELECTRONICS RELIABILITY , cilt.51, sa.3, ss.581-586, 2011 (SCI-Expanded)

269. On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p-Si (MIS) structures

Pakma O., Serin N., Serin T., Altindal Ş.

PHYSICA B-CONDENSED MATTER , cilt.406, sa.4, ss.771-776, 2011 (SCI-Expanded)

270. Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

Arslan E., Butun S., ŞAFAK ASAR Y., Uslu H., Tascioglu I., ALTINDAL Ş., et al.

MICROELECTRONICS RELIABILITY , cilt.51, sa.2, ss.370-375, 2011 (SCI-Expanded)

271. Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

Bengi A., Uslu H., Asar T., Altindal Ş., Cetin S. Ş., Mammadov T. S., et al.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.509, sa.6, ss.2897-2902, 2011 (SCI-Expanded)

272. Anomalous Peak in the Forward-Bias C-V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

TUNÇ T., ALTINDAL Ş., DÖKME İ., Uslu H.

JOURNAL OF ELECTRONIC MATERIALS , cilt.40, sa.2, ss.157-164, 2011 (SCI-Expanded)

273. On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness

Yildirim M., Eroglu A., Altindal Ş., Durmus P.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.13, ss.98-105, 2011 (SCI-Expanded)

274. A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer

Yildiz D. E., Altindal Ş.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.13, ss.53-58, 2011 (SCI-Expanded)

275. The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes

Ozdemir S., DÖKME İ., ALTINDAL Ş.

INTERNATIONAL JOURNAL OF ELECTRONICS , cilt.98, sa.6, ss.699-712, 2011 (SCI-Expanded)

276. The dependence of electrical properties of Al/NphAOEMA/PEDOT-PSS/ITO structures on temperature

Sahingoz R., Cavus H. K., Altindal Ş., Soykan C., Dokme İ.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.12, ss.2132-2135, 2010 (SCI-Expanded)

277. AC electrical conductivity and dielectric properties of Al/NphAOEMA/PEDOT-PSS/ITO structure at different temperatures

Sahingoz R., Cavus H. K., Altindal Ş.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.11, ss.1779-1782, 2010 (SCI-Expanded)

278. Illumination effect on electrical characteristics of organic-based Schottky barrier diodes

Uslu H., ALTINDAL Ş., DÖKME İ.

JOURNAL OF APPLIED PHYSICS , cilt.108, sa.10, 2010 (SCI-Expanded)

279. The Effect of Gamma Irradiation on Electrical Characteristics of Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes

Tascioglu I., Uslu H., Altindal Ş., Durmus P., Dokme İ., Tunc T.

JOURNAL OF APPLIED POLYMER SCIENCE , cilt.118, sa.1, ss.596-603, 2010 (SCI-Expanded)

280. Temperature and frequency dependent dielectric properties of Au/Bi4Ti3O12/SiO2/Si (MFIS) structures

Altindal Ş., Parlakturk F., TATAROĞLU A., Bulbul M. M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.12, sa.10, ss.2139-2144, 2010 (SCI-Expanded)

281. A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

Bengi A., Aydemir U., Altindal Ş., Özen Y., Ozcelik S.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.505, ss.628-633, 2010 (SCI-Expanded)

282. The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

Tascioglu I., AYDEMİR U., ALTINDAL Ş.

JOURNAL OF APPLIED PHYSICS , cilt.108, sa.6, 2010 (SCI-Expanded)

283. Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers

Uslu H., Bengi A., Cetin S. Ş., AYDEMİR U., Altindal Ş., Aghaliyeva S. T., et al.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.507, sa.1, ss.190-195, 2010 (SCI-Expanded)

284. Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes

Bulbul M. M., Bengi S., Dokme İ., Altindal Ş., Tunc T.

JOURNAL OF APPLIED PHYSICS , cilt.108, sa.3, 2010 (SCI-Expanded)

285. Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

Dokme İ., Tunc T., Altindal Ş., Uslu I.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.8, ss.1225-1228, 2010 (SCI-Expanded)

286. Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range

Yildiz D. E., Altindal Ş.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.7, ss.1002-1007, 2010 (SCI-Expanded)

287. The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes

Uslu H., Altindal Ş., AYDEMİR U., Dokme İ., Afandiyeva I. M.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.503, sa.1, ss.96-102, 2010 (SCI-Expanded)

288. Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer

Tunc T., Dokme İ., Altindal Ş., Uslu I.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.7, ss.947-950, 2010 (SCI-Expanded)

289. Temperature Dependence Electrical Characteristics of n-GaAs Structure Grown by MBE

Kınacı B., Asar T., Özen Y., Altındal Ş., Mammadov T., Özçelik S.

Azerbaijan Journal of Physics, Fizika , cilt.16, sa.2, ss.335-338, 2010 (Hakemli Dergi)

290. Illumination effect on I-V, C-V and G/w-V characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature

Uslu H., Dokme İ., Afandiyeva I. M., Altindal Ş.

SURFACE AND INTERFACE ANALYSIS , cilt.42, ss.807-811, 2010 (SCI-Expanded)

291. A comparative of energy density distribution of surface states profiles with 50 and 826 Å insulator layer in Al SiO2 p Si

ALTINDAL Ş., KAYA A., SÖNMEZ Z., ŞAFAK ASAR Y.

Azerbaijan Journal of Physics, Fizika, (ISSN 1028-8546) , cilt.16, sa.2, ss.356-358, 2010 (Hakemli Dergi)

292. Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

Altuntas H., Bengi A., Asar T., Aydemir U., Sarikavak B., Özen Y., et al.

SURFACE AND INTERFACE ANALYSIS , cilt.42, sa.6-7, ss.1257-1260, 2010 (SCI-Expanded)

293. The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AlN/GaN heterostructures

ALTINDAL Ş., ŞAFAK ASAR Y., Tascioglu I., ÖZBAY E.

SURFACE AND INTERFACE ANALYSIS , cilt.42, ss.803-806, 2010 (SCI-Expanded)

294. The effects of series resistance on the forward bias I-V characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures

TATAROĞLU A., Altindal Ş., AYDEMİR U., Uslu H.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.5, ss.616-619, 2010 (SCI-Expanded)

295. Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

Vural O., Safak Y., Altindal Ş., Turut A.

CURRENT APPLIED PHYSICS , cilt.10, sa.3, ss.761-765, 2010 (SCI-Expanded)

296. Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan E., ŞAFAK ASAR Y., ALTINDAL Ş., Kelekci O., ÖZBAY E.

JOURNAL OF NON-CRYSTALLINE SOLIDS , cilt.356, ss.1006-1011, 2010 (SCI-Expanded)

297. The role of Co-60 gamma-ray irradiation on the interface states and series resistance in MIS structures

Tascioglu I., Tataroğlu A., Özbay A., Altındal Ş.

RADIATION PHYSICS AND CHEMISTRY , cilt.79, ss.457-461, 2010 (SCI-Expanded)

298. The distribution of barrier heights in Au/n-Si Schottky barrier diodes from I-V-T measurements

Durmus P., Cuha B., Altindal Ş., AYDEMİR U.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.4, sa.4, ss.579-583, 2010 (SCI-Expanded)

299. The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes

Yildiz D. E., Altindal Ş., Tekeli Z., Ozer M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.13, sa.1, ss.34-40, 2010 (SCI-Expanded)

300. On the temperature dependent profile of interface states and series resistance characteristics in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures

Demirezen S., Altindal Ş.

PHYSICA B-CONDENSED MATTER , cilt.405, sa.4, ss.1130-1138, 2010 (SCI-Expanded)

301. The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature

Uslu H., Safak Y., Tascioglu I., Altindal Ş.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.12, sa.2, ss.262-266, 2010 (SCI-Expanded)

302. Temperature and frequency dependent dielectric properties of Au/Bi 4Ti3O12/SiO2/Si (MFIS) structures

ALTINDAL Ş., Parlaktürk F., TATAROĞLU A., BÜLBÜL M. M.

Journal of Optoelectronics and Advanced Materials , cilt.12, sa.10, ss.2139-2143, 2010 (SCI-Expanded)

303. Frequency and Temperature Dependence of Dielectric Properties of Au/Polyvinyl Alcohol (Co, Ni-Doped)/n-Si Schottky Diodes

TUNÇ T., Uslu I., DÖKME İ., ALTINDAL Ş., Uslu H.

INTERNATIONAL JOURNAL OF POLYMERIC MATERIALS , cilt.59, sa.10, ss.739-756, 2010 (SCI-Expanded)

304. Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

Dokme İ., Altindal Ş., Tunc T., Uslu I.

MICROELECTRONICS RELIABILITY , cilt.50, sa.1, ss.39-44, 2010 (SCI-Expanded)

305. Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range

Altuntas H., Bengi A., Aydemir U., Asar T., Cetin S. Ş., Kars İ., et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.12, sa.6, ss.224-232, 2009 (SCI-Expanded)

306. Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current-voltage and admittance-voltage characteristics

Altindal Ş., Yucedag I., TATAROĞLU A.

VACUUM , cilt.84, sa.3, ss.363-368, 2009 (SCI-Expanded)

307. The effect of series resistance and surface states on current-voltage (I-V) characteristics of Au/n-GaAs/GaAs structures at wide temperature range

Bengi A., Mammadov T. S., Ozcelik S., Altindal Ş.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.3, sa.11, ss.1155-1160, 2009 (SCI-Expanded)

308. The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I-V characteristics

TATAROĞLU A., Altindal Ş.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.484, ss.405-409, 2009 (SCI-Expanded)

309. Electrical Characteristics of Al/Polyindole Schottky Barrier Diodes. I. Temperature Dependence

Altindal Ş., SARI B., ÜNAL H. İ., Yavas N.

JOURNAL OF APPLIED POLYMER SCIENCE , cilt.113, sa.5, ss.2955-2961, 2009 (SCI-Expanded)

310. A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range

Altuntas H., Altindal Ş., Shtrikman H., Ozcelik S.

MICROELECTRONICS RELIABILITY , cilt.49, sa.8, ss.904-911, 2009 (SCI-Expanded)

311. Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

Arslan E., ALTINDAL Ş., ÖZÇELİK S., ÖZBAY E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.24, sa.7, 2009 (SCI-Expanded)

312. Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

ÖZDEMİR A. F., ALDEMİR D. A., KÖKCE A., Altindal Ş.

SYNTHETIC METALS , cilt.159, sa.14, ss.1427-1432, 2009 (SCI-Expanded)

313. The distribution of barrier heights in MIS type Schottky diodes from current-voltage-temperature (I-V-T) measurements

TATAROĞLU A., ALTINDAL Ş.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.479, ss.893-897, 2009 (SCI-Expanded)

314. Frequency Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures

AYDEMİR U., ŞAFAK ASAR Y., ALTINDAL Ş., AGASİYEV A. A.

Journal of Optoelectronics and Advanced Materials - Symposia , cilt.1, sa.3, ss.258-261, 2009 (Hakemli Dergi)

315. The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure

Oezdemir A. F., Kotan Z., ALDEMİR D. A., Altindal Ş.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.46, sa.2, 2009 (SCI-Expanded)

316. Gamma-ray irradiation effects on the interface states of MIS structures

TATAROĞLU A., Altindal Ş.

SENSORS AND ACTUATORS A-PHYSICAL , cilt.151, sa.2, ss.168-172, 2009 (SCI-Expanded)

317. The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol-gel method

Pakma O., Serin N., Serin T., Altindal Ş.

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY , cilt.50, sa.1, ss.28-34, 2009 (SCI-Expanded)

318. Characterization of series resistance in the Sn/p-InP Schottky barrier diodes using temperature dependent C-V,G/w and DLTS

Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.3, sa.3, ss.171-174, 2009 (SCI-Expanded)

319. Electrical characteristics of Au/n-GaAs Schottky barrier diodes with and without SiO2 insulator layer at room temperature

Altuntas H., Altindal Ş., Oezcelik S., Shtrikman H.

VACUUM , cilt.83, sa.7, ss.1060-1065, 2009 (SCI-Expanded)

320. Irradiation effects on the C-V and G/omega-V characteristics of Sn/p-Si (MS) structures

Karatas S., Tueruet A., Altindal Ş.

RADIATION PHYSICS AND CHEMISTRY , cilt.78, sa.2, ss.130-134, 2009 (SCI-Expanded)

321. Temperature Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures

ŞAFAK ASAR Y., AYDEMİR U., ALTINDAL Ş., MAMMADOV T. S., TATAROĞLU A.

Journal of Optoelectronics and Advanced Materials - Symposia , cilt.1, sa.3, ss.266-269, 2009 (Hakemli Dergi)

322. The Barrier Height Distribution in Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures

ŞAFAK ASAR Y., AYDEMİR U., ALTINDAL Ş., MAMMADOV T.

Balkan Physics Letters , cilt.15, sa.1, ss.151056, 2009 (Hakemli Dergi)

323. Origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n=InP Schottky Barier Diodes (SBDs)

Korucu D., Altindal Ş., Mammadov T. S., Ozcelik S.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , cilt.11, sa.2, ss.192-196, 2009 (SCI-Expanded)

324. On the Frequency and Voltage Dependent Interface States and Series Resistance in Au SrTiO3 n Si Structures

AYDEMİR U., ŞAFAK ASAR Y., MAMMADOV T. S., ALTINDAL Ş.

Balkan Physics Letters , cilt.15, sa.1, ss.151050, 2009 (Hakemli Dergi)

325. On the temperature dependent anomalous peak and negative capacitance in Au/n-InP Schottky barrier diodes

Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.3, sa.1, ss.56-59, 2009 (SCI-Expanded)

326. Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures

Arslan E., ALTINDAL Ş., Oezcelik S., ÖZBAY E.

JOURNAL OF APPLIED PHYSICS , cilt.105, sa.2, 2009 (SCI-Expanded)

327. The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range

Zeyrek S., Buelbuel M. M., Altindal Ş., Baykul M. C., Yuezer H.

BRAZILIAN JOURNAL OF PHYSICS , cilt.38, sa.4, ss.591-597, 2008 (SCI-Expanded)

328. Temperature dependent behavior of Sn/p-InP Schottky barrier diodes

Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.2, sa.12, ss.766-769, 2008 (SCI-Expanded)

329. Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures

Goekcen M., Altuntas H., Altindal Ş.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.2, sa.12, ss.838-841, 2008 (SCI-Expanded)

330. MBE-growth and characterization of InxGa1-xAs/GaAs (x=0.15) superlattice

Sarikavak B., Oeztuerk M. K., Altuntas H., Mammedov T. S., Altindal Ş., Oezcelik S.

REVISTA MEXICANA DE FISICA , cilt.54, sa.6, ss.416-421, 2008 (SCI-Expanded)

331. Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p(+) (MOS) structures

Pakma O., Serin N., Serin T., Altindal Ş.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.41, sa.21, 2008 (SCI-Expanded)

332. Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods

TATAROĞLU A., Altindal Ş.

MICROELECTRONIC ENGINEERING , cilt.85, sa.11, ss.2256-2260, 2008 (SCI-Expanded)

333. The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures

Tekeli Z., Altindal Ş., Çakmak M., Ozcelik S., Ozbay E.

MICROELECTRONIC ENGINEERING , cilt.85, ss.2316-2321, 2008 (SCI-Expanded)

334. The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures

Pakma O., Serin N., Serin T., Altindal Ş.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.23, sa.10, 2008 (SCI-Expanded)

335. The frequency dependent electrical characteristics of Sn/p-InP Schottky barrier diodes (SBDs)

Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , cilt.2, sa.9, ss.525-529, 2008 (SCI-Expanded)

336. Study on the frequency dependence of electrical and dielectric characteristics of Au/SnO2/n-Si (MIS) structures

TATAROĞLU A., Altindal Ş.

MICROELECTRONIC ENGINEERING , cilt.85, sa.9, ss.1866-1871, 2008 (SCI-Expanded)

337. Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range

Bengi A., Altindal Ş., Ozcelik S., Agaliyeva S. T., Mammadov T. S.

VACUUM , cilt.83, sa.2, ss.276-281, 2008 (SCI-Expanded)

338. Frequency and gate voltage effects on the dielectric properties of Au/SiO(2)/n-Si structures

Dokme İ., ALTINDAL Ş., Gokcen M.

MICROELECTRONIC ENGINEERING , cilt.85, sa.9, ss.1910-1914, 2008 (SCI-Expanded)

339. On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/P-Si (MIS) Schottky diodes

Altindal Ş., Kanbur H., Yuecedag I., TATAROĞLU A.

MICROELECTRONIC ENGINEERING , cilt.85, sa.7, ss.1495-1501, 2008 (SCI-Expanded)

340. Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures

TATAROĞLU A., Yuecedag I., Altindal Ş.

MICROELECTRONIC ENGINEERING , cilt.85, sa.7, ss.1518-1523, 2008 (SCI-Expanded)

341. The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures

Pakma O., Serin N., Serin T., Altindal Ş.

JOURNAL OF APPLIED PHYSICS , cilt.104, sa.1, 2008 (SCI-Expanded)

342. The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures

Altindal Ş., Parlaktuerk F., TATAROĞLU A., PARLAK M., Sarmasov S. N., Agasiev A. A.

VACUUM , cilt.82, sa.11, ss.1246-1250, 2008 (SCI-Expanded)

343. Characterization of interface states at Au/SnO2/n-Si (MOS) structures

TATAROĞLU A., Altindal Ş.

VACUUM , cilt.82, sa.11, ss.1203-1207, 2008 (SCI-Expanded)

344. Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes

Yildiz D. E., Altindal Ş., Kanbur H.

JOURNAL OF APPLIED PHYSICS , cilt.103, sa.12, 2008 (SCI-Expanded)

345. The interface states analysis of the MIS structure as a function of frequency

TATAROĞLU A., Altindal Ş.

MICROELECTRONIC ENGINEERING , cilt.85, sa.3, ss.542-547, 2008 (SCI-Expanded)

346. The distribution of the barrier height in Al-TiW-Pd2Si/n-Si Schottky diodes from I-V-T measurements

Dokme İ., ALTINDAL Ş., Afandiyeva I. M.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.23, sa.3, 2008 (SCI-Expanded)

347. Effects of gamma-ray irradiation on the C-V and G/omega-V characteristics of Al/SiO2/p-Si (MIS) structures

Dokme İ., DURMUŞ P., ALTINDAL Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , cilt.266, sa.5, ss.791-796, 2008 (SCI-Expanded)

348. The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/n-Si structure using I-V, C-V and G/omega-V measurements

Afandiyeva I. M., Doekme İ., Altindal Ş., Abdullayeva L. K., Askerov S. G.

MICROELECTRONIC ENGINEERING , cilt.85, sa.2, ss.365-370, 2008 (SCI-Expanded)

349. Effects of illumination and Co-60 gamma-ray irradiation on the electrical characteristics of porous silicon solar cells

Tuezuen O., Altindal Ş., Oktik S.

RENEWABLE ENERGY , cilt.33, sa.2, ss.286-292, 2008 (SCI-Expanded)

350. On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes

Yildiz D. E., Altindal Ş.

MICROELECTRONIC ENGINEERING , cilt.85, sa.2, ss.289-294, 2008 (SCI-Expanded)

351. Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures

Afandiyeva I. M., Doekme İ., Altindal Ş., Buelbuel M. M., TATAROĞLU A.

MICROELECTRONIC ENGINEERING , cilt.85, sa.2, ss.247-252, 2008 (SCI-Expanded)

352. On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

Parlaktuerk F., Altindal Ş., TATAROĞLU A., PARLAK M., Agasiev A.

MICROELECTRONIC ENGINEERING , cilt.85, sa.1, ss.81-88, 2008 (SCI-Expanded)

353. The effect of Co-60 (gamma-ray) irradiation Au/SnO2/n-Si on the electrical characteristics of (MIS) structures

Goekcen M., TATAROĞLU A., Altindal Ş., Buelbuel M. M.

RADIATION PHYSICS AND CHEMISTRY , cilt.77, sa.1, ss.74-78, 2008 (SCI-Expanded)

354. Analysis of interface states and series resistance of MIS Schottky diodes using the current-voltage (I-V) characteristics

TATAROĞLU A., Altindal Ş.

MICROELECTRONIC ENGINEERING , cilt.85, sa.1, ss.233-237, 2008 (SCI-Expanded)

355. Current Voltage I V and Capacitance Voltage C V Characteristics of Au Bi4Ti3O12 SnO2 Structures

Parlaktürk F., Agasiev A., TATAROĞLU A., ALTINDAL Ş.

Gazi University Journal of Science , cilt.20, ss.97-102, 2007 (ESCI)

356. The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)

Altindal Ş., Kanbur H., TATAROĞLU A., Buelbuel M. M.

PHYSICA B-CONDENSED MATTER , cilt.399, sa.2, ss.146-154, 2007 (SCI-Expanded)

357. Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures

TATAROĞLU A., Altindal Ş., Boeluekdemir M. H., Tanir G.

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms , cilt.264, sa.1, ss.73-78, 2007 (SCI-Expanded)

358. Analysis of interface states and series resistance at MIS structure irradiated under Co-60 gamma-rays

TATAROĞLU A., Altindal Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT , cilt.580, sa.3, ss.1588-1593, 2007 (SCI-Expanded)

359. Current-voltage characteristics of Al/Rhodamine-101/n-GaAs and Cu/Rhodamine-101/n-GaAs rectifier contacts

Vural O., Yildirim N., Altindal Ş., Tueruet A.

SYNTHETIC METALS , cilt.157, ss.679-683, 2007 (SCI-Expanded)

360. The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AlN/GaN heterostructures at high temperatures

Tekeli Z., Altindal Ş., ÇAKMAK M., Oezaelik S., Caliskan D., Oezbay E.

JOURNAL OF APPLIED PHYSICS , cilt.102, sa.5, 2007 (SCI-Expanded)

361. Frequency and Temperature Dependent Interface States and Series Resistance of Au CdTe Schottky Diodes

MAMMADOV T. S., KANBUR ÇAVUŞ H., ŞAFAK ASAR Y., ALTINDAL Ş., ACAR S., AKHMEDZADE N. D.

Azerbaijan Journal of Physics, Fizika , cilt.13, sa.4, ss.219-223, 2007 (Hakemli Dergi)

362. Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes

Ozer M., Yildiz D. E., Altindal Ş., Bulbul M. M.

SOLID-STATE ELECTRONICS , cilt.51, sa.6, ss.941-949, 2007 (SCI-Expanded)

363. Gaussian distribution of inhomogeneous barrier height in Al0.24Ga0.76As/GaAs structures

Bengi A., Altindal Ş., Ozcelik S., Mammadov T. S.

PHYSICA B-CONDENSED MATTER , cilt.396, ss.22-28, 2007 (SCI-Expanded)

364. On the profile of frequency and voltage dependent interface states and series resistance in MIS structures

Dokme İ., Altindal Ş.

PHYSICA B-CONDENSED MATTER , cilt.393, ss.328-335, 2007 (SCI-Expanded)

365. Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I-V-T and C-V-T measurements

Karatas S., Altindal Ş., Turut A., Cakar M.

PHYSICA B-CONDENSED MATTER , cilt.392, ss.43-50, 2007 (SCI-Expanded)

366. The C-V-f and G/omega-V-f characteristics of Au/SiO2/n-Si capacitors

Dokme İ., Altindal Ş.

PHYSICA B-CONDENSED MATTER , cilt.391, sa.1, ss.59-64, 2007 (SCI-Expanded)

367. Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures

Altindal Ş., Kanbur H., Yildiz D. E., Parlak M.

APPLIED SURFACE SCIENCE , cilt.253, sa.11, ss.5056-5061, 2007 (SCI-Expanded)

368. On the profile of frequency dependent series resistance and dielectric constant in MIS structure

Yucedag I., Altindal Ş., TATAROĞLU A.

MICROELECTRONIC ENGINEERING , cilt.84, sa.1, ss.180-186, 2007 (SCI-Expanded)

369. Effects of beta-ray irradiation on the C-V and G/ω-V characteristics of Au/SiO2/n-Si (MOS) structures

TATAROĞLU A., Bolukdemir M. H., Tanir G., Altindal Ş., Bulbul M. M.

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms , cilt.254, sa.2, ss.273-277, 2007 (SCI-Expanded)

370. The effects of frequency and gamma-irradiation on the dielectric properties of MIS type Schottky diodes

TATAROĞLU A., Altindal Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , cilt.254, sa.1, ss.113-117, 2007 (SCI-Expanded)

371. Co-60 gamma irradiation effects on the current-voltage (I-V) characteristics of Al/SiO2/P-Si (MIS) Schottky diodes

TATAROĞLU A., Altindal Ş., Bulbul M. M.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT , cilt.568, sa.2, ss.863-868, 2006 (SCI-Expanded)

372. Electrical characteristics of Co-60 gamma-ray irradiated MIS Schottky diodes

TATAROĞLU A., Altindal Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , cilt.252, sa.2, ss.257-262, 2006 (SCI-Expanded)

373. Frequency and voltage dependent surface states and series resistance of novel Si solar cells

Tuzun O., Altindal Ş., Oktik S.

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , cilt.134, ss.291-295, 2006 (SCI-Expanded)

374. The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

Dokme İ., Altindal Ş., Bulbul M. M.

APPLIED SURFACE SCIENCE , cilt.252, sa.22, ss.7749-7754, 2006 (SCI-Expanded)

375. On the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures

Dokme İ., Altindal Ş.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.21, sa.8, ss.1053-1058, 2006 (SCI-Expanded)

376. Electrical characterization of novel Si solar cells

Tuzun O., Oktik S., Altindal Ş., Mammadov T. S.

THIN SOLID FILMS , cilt.511, ss.258-264, 2006 (SCI-Expanded)

377. On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

Bulbul M. M., Zeyrek S., Altindal Ş., Yuzer H.

MICROELECTRONIC ENGINEERING , cilt.83, sa.3, ss.577-581, 2006 (SCI-Expanded)

378. Characterization of current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) features of Al/SiO2/p-Si (MIS) Schottky diodes

TATAROĞLU A., Altindal Ş.

MICROELECTRONIC ENGINEERING , cilt.83, sa.3, ss.582-588, 2006 (SCI-Expanded)

379. The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range

Altindal Ş., Dokme İ., Bulbul M. M., Yalcin N., Serin T.

MICROELECTRONIC ENGINEERING , cilt.83, sa.3, ss.499-505, 2006 (SCI-Expanded)

380. Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

Zeyrek S., Altindal Ş., Yuzer H., Bulbul M. M.

APPLIED SURFACE SCIENCE , cilt.252, sa.8, ss.2999-3010, 2006 (SCI-Expanded)

381. The effect of interface states, excess capacitance and series resistance in the Al/SiO2/P-Si Schottky diodes

Kanbur H., Altindal Ş., TATAROĞLU A.

APPLIED SURFACE SCIENCE , cilt.252, sa.5, ss.1732-1738, 2005 (SCI-Expanded)

382. Effects of Co-60 gamma-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures

Karatas S., Turut A., Altindal Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT , cilt.555, ss.260-265, 2005 (SCI-Expanded)

383. Analysis of I-V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

Karatas S., Altindal Ş.

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , cilt.122, sa.2, ss.133-139, 2005 (SCI-Expanded)

384. Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

Tataroğlu A., Altindal Ş., Bulbul M. M.

MICROELECTRONIC ENGINEERING , cilt.81, sa.1, ss.140-149, 2005 (SCI-Expanded)

385. Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes

Karatas S., Altindal Ş.

SOLID-STATE ELECTRONICS , cilt.49, sa.6, ss.1052-1054, 2005 (SCI-Expanded)

386. Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures

Karatas S., Altindal Ş., Cakar M.

PHYSICA B-CONDENSED MATTER , cilt.357, ss.386-397, 2005 (SCI-Expanded)

387. Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer

Tugluoglu N., Karadeniz S., Altindal Ş.

APPLIED SURFACE SCIENCE , cilt.239, ss.481-489, 2005 (SCI-Expanded)

388. Density of interface states, excess capacitance and series resistance in the metal-insulator-semiconductor (MIS) solar cells

Altindal Ş., TATAROĞLU A., Dokme İ.

SOLAR ENERGY MATERIALS AND SOLAR CELLS , cilt.85, sa.3, ss.345-358, 2005 (SCI-Expanded)

389. Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under Co-60-gamma rays

Tugluoglu N., Altindal Ş., TATAROĞLU A., Karadeniz S.

MICROELECTRONICS JOURNAL , cilt.35, sa.9, ss.731-738, 2004 (SCI-Expanded)

390. Au/SnO2/n-Si (MOS) structures response to radiation and frequency

TATAROĞLU A., Altindal Ş., Karadeniz S., Tugluoglu N.

MICROELECTRONICS JOURNAL , cilt.34, sa.11, ss.1043-1049, 2003 (SCI-Expanded)

391. The role of interface states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si Schottky diodes

Altindal Ş., Karadeniz S., Tugluoglu N., TATAROĞLU A.

SOLID-STATE ELECTRONICS , cilt.47, sa.10, ss.1847-1854, 2003 (SCI-Expanded)

392. Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(100) Schottky contacts

Karatas S., Altindal Ş., Turut A., Ozmen A.

APPLIED SURFACE SCIENCE , cilt.217, ss.250-260, 2003 (SCI-Expanded)

393. Coherent infrared image converter based on GaAs and BSO crystals

Salamov B., Kurt H., Lebedeva N., Altindal Ş., Ozer M.

IMAGING SCIENCE JOURNAL , cilt.49, sa.4, ss.197-203, 2001 (SCI-Expanded)

394. The concentration of currents on the artificial surface inhomogeneities of semiconducting cathodes in ionization cells

Salamov B., Ozer M., Kasap M., Altindal Ş.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.32, sa.6, ss.682-687, 1999 (SCI-Expanded)

395. Characteristic features of an ionization system with semiconducting cathode

Salamov B., Altindal Ş., Ozer M., Colakoglu K., BULUR E.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.2, sa.3, ss.267-273, 1998 (SCI-Expanded)

396. A semiconductor photographic system for high-speed measurement

Salamov B., Lebedeva N., Colakoglu K., Altindal Ş.

IMAGING SCIENCE JOURNAL , cilt.46, sa.2, ss.65-68, 1998 (SCI-Expanded)

397. Complex-radical cyclocopolymerization of allyl a-(N-maleimido)acetate with styrene and maleic anhydride

Rzaev Z., Salamova U., Altindal Ş.

MACROMOLECULAR CHEMISTRY AND PHYSICS , cilt.198, sa.8, ss.2475-2487, 1997 (SCI-Expanded)

398. Photoelectrical properties of semiconductor in contact with gas discharge plasma

Lebedeva N., Orbukh V., Salamov B., Ozer M., Colakoglu K., Altindal Ş.

JOURNAL DE PHYSIQUE III , cilt.7, sa.5, ss.1039-1044, 1997 (SCI-Expanded)

399. A stable discharge glow in gas discharge system with semiconducting cathode

Salamov B., Colakoglu K., Altindal Ş., Ozer M.

JOURNAL DE PHYSIQUE III , cilt.7, sa.4, ss.927-936, 1997 (SCI-Expanded)

400. The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films

Salamov B., Civi M., Altindal Ş., Kasap M., BULUR E.

JOURNAL OF INFORMATION RECORDING , cilt.23, sa.5, ss.437-445, 1997 (SCI-Expanded)

401. Influence of gas medium on the sensitivity of an ionization type semiconductor photographic system

Salamov B., Colakoglu K., Altindal Ş.

IMAGING SCIENCE JOURNAL , cilt.45, sa.2, ss.65-68, 1997 (SCI-Expanded)

402. Effect of inorganic salts on the main parameters of the dilute aqueous poly(vinylpyrrolidone) solutions

Salamova U., Rzaev Z., Altindal Ş., Masimov A.

POLYMER , cilt.37, sa.12, ss.2415-2421, 1996 (SCI-Expanded)

403. Enhancement of the sensitivity of an ionization type semiconductor photographic system

Salamov B., Colakoglu K., Altindal Ş., Ozer M.

JOURNAL OF PHOTOGRAPHIC SCIENCE , cilt.44, sa.4, ss.110-115, 1996 (SCI-Expanded)

404. RECORDING THE RESISTANCE INHOMOGENEITY IN HIGH-RESISTIVITY SEMICONDUCTORS PLATES

SALAMOV B., COLAKOGLU K., ALTINDAL Ş.

INFRARED PHYSICS & TECHNOLOGY , cilt.36, sa.3, ss.661-668, 1995 (SCI-Expanded)

405. TEMPERATURE-DEPENDENT ELECTRICAL CHARACTERISTICS OF AL-SIOX-PSI SOLAR-CELLS

OZDEMIR S., ALTINDAL Ş.

SOLAR ENERGY MATERIALS AND SOLAR CELLS , cilt.32, sa.2, ss.115-127, 1994 (SCI-Expanded)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 129

1. Organic - Inorganic Collaboration: Borophene meets PEDOT:PSS for X-ray Detection

Ulusoy M., Altındal Ş.

19th International Nanoscience and Nanotechnology Conference (NanoTR-19), Ankara, Türkiye, 27 - 29 Ağustos 2025, (Özet Bildiri)

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Abay Ö., Ulusoy M., Uyar E., Altındal Ş., Bilge Ocak S.

8. ULUSLARARASI MÜHENDİSLİK VE TEKNOLOJİ YÖNETİMİ KONGRESİ, İstanbul, Türkiye, 08 Aralık 2022, ss.134-138, (Tam Metin Bildiri)

3. Comprehensive Investigation on Dielectric Properties of Al/CdSPVA/p-Si Structures at 5 kHz-5 MHZ

AzizianKalandaragh Y., YÜCEDAĞ İ., ERSÖZ DEMİR G., ALTINDAL Ş.

6th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2019), 16 - 18 Ekim 2019, (Tam Metin Bildiri)

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KAYMAZ A., ALTINDAL Ş., TECİMER H.

6th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG-2019), Niğde, Türkiye, 16 - 18 Ekim 2019, ss.416-419, (Tam Metin Bildiri)

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SEVGİLİ Ö., Azizian Kalandaragh Y., ALTINDAL Ş.

1st International Conference on Optoelectronics, Applied Optics and Microelectronics, 17 - 19 Ağustos 2019, (Tam Metin Bildiri)

6. Temperature Dependent Barrier Height, Ideality Factor,Series Resistance of the Al/Al2O3/p-Si (MIS) Diodes UsingCheung’s Functions in Temperature Range of 200-320 K

KOŞAL M., MARIL E., ALTINDAL Ş.

ퟏst International Conference on Optoelectronics, Applied Optics and Microelectronics, ERDEBİL, İran, 17 - 19 Ağustos 2019, (Tam Metin Bildiri)

7. Temperature Dependent Current-Transport Mechanisms(CTMs) in the Al/Al2O3/p-Si (MIS) Diodes (SDs) UsingCurrent-Voltage-Temperature (I-V-T) Characteristics in theTemperature Range of 200-320 K

MARIL E., KOŞAL M., ALTINDAL Ş.

1ST INTERNATIONAL CONFERENCE ON OPTOELECTRONICS , APLIED OPTİCS AND MICROELECTRONICS, ERDEBİL, İran, 17 - 19 Ağustos 2019, (Tam Metin Bildiri)

8. CAPACITANCE-VOLTAGE (C-V) AND CONDUCTANCE-VOLTAGE (G/휔-V)CHARACTERISTICS BEFORE AND AFTER IRRADIATION IN Au/n-Si/AgSCHOTTKY BARRIER DIODES (SBDs)

DURMUŞ P., ALTINDAL Ş., KAYMAZ A.

International Natural Science, Engineering and Materials Technology Conference, İstanbul, Türkiye, 9 - 10 Eylül 2019, ss.9-14, (Tam Metin Bildiri)

9. THE INVESTIGATION OF EFFECTS OF (NANOCARBON DOPED-PVP)POLYMER INTERFACIAL LAYER ON THE MAIN ELECTRICALPARAMETERS AND CONDUCTIVITY

DÖKME İ., ALTINDAL Ş.

International Natural Science, Engineering and Materials Technology ConferenceSep 9-10, 2019, İstanbul / TURKEY, Türkiye, 9 - 10 Eylül 2019, (Tam Metin Bildiri)

10. The Investigation of Temperature Dependent Current – Transfer Mechanisms of Au/PVA/n-GaAs

EVCİN E., TECİMER H., ALTINDAL Ş., TECİMER H.

MSNG 2019, 16 - 18 Ekim 2019, (Tam Metin Bildiri)

11. Morphological and structural properties of metamaterial based on ITO/Sapphire/ZnS/Al superlattice

Akin B., ALTINDAL Ş., Farazin J., Pirgholi-Givi G., Azizian-Kalandaragh Y.

21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019, Granada, İspanya, 9 - 13 Eylül 2019, ss.816-819, (Tam Metin Bildiri)

12. Utilization of Al2O3/PVP nanocomposite as an interfacial layer for schottky structures

Akin B., Pirgholi-Givi G., Farazin J., Azizian-Kalandaragh Y., ALTINDAL Ş.

13th International Congress on Artificial Materials for Novel Wave Phenomena, Metamaterials 2019, Rome, İtalya, 16 - 21 Eylül 2019, (Tam Metin Bildiri)

13. TEMPERATURE DEPENDENCED CONDUCTIVITY OF PtSi/n-Si SCHOTTKY DIODES WITH SELF-ASSEMBLED PATCHES

Afandiyeva I. M., Altindal Ş.

International Conference on Modern Trends in Physics, Baku, Azerbaycan, 1 - 03 Mayıs 2019, ss.80-83, (Tam Metin Bildiri)

14. The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures

Yukselturk E., Cotuk M., Zeyrek S., Altindal Ş., Bulbul M. M.

International Congress on Semiconductor Materials and Devices (ICSMD), Konya, Türkiye, 17 - 19 Ağustos 2017, cilt.18, ss.1842-1851, (Tam Metin Bildiri)

15. On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures

Yukselturk E., Cotuk M., Bulbul M. M., Altindal Ş., Zeyrek S.

International Congress on Semiconductor Materials and Devices (ICSMD), Konya, Türkiye, 17 - 19 Ağustos 2017, cilt.18, ss.1852-1860, (Tam Metin Bildiri)

16. Temperature and Frequency Dependence Electrical Characteristics of Au/n-Si (SBD) With A Thin PPy Interfacial Layer In The Wide Range Of Applied Bias Voltage

MARIL E., ALTINDAL Ş.

MSNG 2018, Nevşehir, Türkiye, 25 - 26 Ekim 2018

17. Study of frequency dispersion effect on admittance characteristics of Au/ZnFe2O4-PVA /n-Si structures

TAŞÇIOĞLU İ., Kalandaragh Y. A., Badali Y., ALTINDAL Ş.

International Materials Science andNanotechology For Next Generation conference (MSNG2018), 4 - 06 Ekim 2018, (Özet Bildiri)

18. Acomparative Study on the Au/p-Si diodes with and without different rate (0,1, 0,5, 2) ZnO-doped CuO interfacial layer

ÇETİNKAYA H. G., ALTINDAL Ş., DEMİREZEN S.

International Materials Science and Nanotechnology for Next Generation (MSNG2018), 4 - 07 Ekim 2018, (Tam Metin Bildiri)

19. Photocurrent characteristics of Au/ p-Si (MS) type photo-diodewith (2 ZnO-doped CuO)/ Interfacial layer by sol gel method

ALTINDAL Ş., ÇETİNKAYA H. G.

International Materials Science and Nanotechnology for Next Generation (MSNG2018), 4 - 07 Ekim 2018, (Tam Metin Bildiri)

20. Frequency Dependent Dielectric Properties, Electric Modulus and ac Electrical Conductivity of Al/C29H32O17/p type Si (MPS) Structure

ERBİLEN TANRIKULU E., YÜKSELTÜRK E., ALTINDAL Ş.

5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2018), 4 - 06 Ekim 2018, (Özet Bildiri)

21. A Comparative Study on The Electrical Characteristics of Au/p-Si diodes with and without different rate (0.1, 0.5 and 2) ZnO-doped CuO interfacial layer

ÇETİNKAYA H. G., ALTINDAL Ş., DEMİREZEN S.

5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 Ekim 2018, (Tam Metin Bildiri)

22. Efficiency Restrictions and Characterization In Solar Cells.

ALTINDAL Ş.

5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 Ekim 2018, (Tam Metin Bildiri)

23. On the voltage dependent profiles of surface states and their relaxation times in Al/C29H32O17/p-Si (MPS) structure by using conductance method

YÜKSELTÜRK E., ERBİLEN TANRIKULU E., ALTINDAL Ş.

5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2018), 4 - 06 Ekim 2018, (Özet Bildiri)

24. The Photovoltaik Properties of Al/TiO2/p-Si Schottky Diode

SEVGİLİ Ö., Şahinkaya M. A., ORAK İ., ALTINDAL Ş.

Turkish Physical Society 34th International Physich Congress, 5 - 09 Eylül 2018, (Özet Bildiri)

25. Frequency Dependent on Electric Properties of Al/TiO2-(R-CuWs)/pSi Schottky Diode

SEVGİLİ Ö., Şahinkaya M. A., ORAK İ., ÖZEL F., ALTINDAL Ş.

Turkish Physical Society 34th International Physich Congress, 5 - 09 Eylül 2018, (Özet Bildiri)

26. ANOMALOUS PEAK AND NEGATIVE CAPACITANCE BEHAVIOR IN THE FORWARD BIAS C-V PLOTS OF THE Al/(7 Zn-DOPED PVA)/p-Si (MPS) STRUCTURE

ERBİLEN TANRIKULU E., ALTINDAL Ş.

International Congress on Semiconductor Materials and Devices, 17 - 19 Ağustos 2017, (Özet Bildiri)

27. On the profıle of temperature dependent main electrical parameters inAl/P3HT/p-Si (MPS) structures at low temperatures

YÜKSELTÜRK E., ÇOTUK M., BÜLBÜL M. M., ALTINDAL Ş., ZEYREK S.

InternationalCongress on Semiconductor Materials and Devices (ICSMD-2017), Konya, Türkiye, 17 - 19 Ağustos 2017, (Özet Bildiri)

28. THE INVESTIGATION OF FREQUENCY AND VOLTAGE DEPENDENCE ON ELECTRIC CHARACTERISTICS OF Al/P3HT/ P-Si (MPS) STRUCTURES

YÜKSELTÜRK E., ÇOTUK M., BÜLBÜL M. M., ALTINDAL Ş., ZEYREK S.

INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIAL AND DEVICES, 17 - 19 Ağustos 2017, (Özet Bildiri)

29. Frequency and voltage dependence profiles and some main electrical parameters of the Al/(7 Zn-doped PVa)/p-Si (MPS) structures

ERBİLEN TANRIKULU E., ALTINDAL Ş.

International Congress on semiconductor materials and devices, 17 - 19 Ağustos 2017, (Özet Bildiri)

30. Anonalous peak and negative capacitance behaviour in the forward bias c-V plots of the A(7 Zn-doped PVA)/p-Si (MPS) Structure

ERBİLEN TANRIKULU E., ALTINDAL Ş.

International Congress on semiconductor materials and devices, 17 - 19 Ağustos 2017, (Özet Bildiri)

31. On the Frequency and Voltage Dependence of Dielectric Properties and ElectricModulus in Al/Bi4Ti3O12/n-Si (MFS) Capacitors by Using Impedance SpectroscopyMethod

DURMUŞ P., BİLKAN Ç., ALTINDAL Ş., DÖKME İ.

4th Internatıonal conference on materials science and nanotechnology for next generation, 28 - 30 Haziran 2017, (Özet Bildiri)

32. Comparative Study on the Frequency Dependent Dielectric Properties of Au/n-SiC Metal- Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

YÜCEDAĞ İ., ERSÖZ G., DEMİR A., ALTINDAL Ş.

The 25th annual international conference on composites/nanoengineering (ICCE-25), 16 - 22 Temmuz 2017, (Özet Bildiri)

33. Effects of J-Ray Irradiation on the C–V and G/ω–V Characteristics of Al/SiO2/p-Si(MIS) Structures

DÖKME İ., DURMUŞ P., ALTINDAL Ş.

4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)

34. The Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Type Silicon Schottky Barrier Devices

DÖKME İ., DURMUŞ P., ALTINDAL Ş.

4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)

35. The Electrical Characteristics of Al/TiO2-GO/n-Si Schottky Structures

DÖKME İ., DURMUŞ P., ALTINDAL Ş.

4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)

36. Schottky Diode with Curcumin (C21H20O6) Interfacial Layer

DÖKME İ., AYDIN F., Karabulut B., ALTINDAL Ş.

4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)

37. the investigation of the frequency dependent profile of Te/NaF:CdS/SnO2 Schottky diodes

SEVGİLİ Ö., ALTINDAL Ş., BACAKSIZ E.

4th international conference on materials science and nanotechnology for next generation, 28 - 30 Haziran 2017, (Özet Bildiri)

38. Dielectric Constant, Electric Modulus and Electrical Conductivity in Identically Prepared Diodes of Al/Bi4Ti3O12/p-Si (MFS) Structure with Barrier and Thickness Inhomogeneity

DURMUŞ P., ÇETİNKAYA H. G., YILDIRIM M., ALTINDAL Ş., DÖKME İ.

4th Internatıonal conference on materials science and nanotechnology for next generation(MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)

39. Complex Dielectric Constant and Complex Electric Modulus of Al/Bi4Ti3O12/p-Si (MFS)Structures as Function of Voltage at Room Temperature

ÇETİNKAYA H. G., ALTINDAL Ş.

4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)

40. Surface States, Series Resistance and Interfacial Bi4Ti3O12 Layer Effects on the Electrical and dielectric Properties of Al/Bi4Ti3O12/p-Si (MFS) Structure

ÇETİNKAYA H. G., YILDIRIM M., DURMUŞ P., ALTINDAL Ş.

4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)

41. On the temperature and voltage dependent negative dielectric constant, electric modulus and ac electrical conductivity in the Au/Ti/Al2O3/n-GaAs (MIS) structures at 1MHz.

GÜÇLÜ Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.

4th International Conference on Materials Science and Nanotechnology for Next Generation (MSNG-2017), 28 - 30 Haziran 2017, (Özet Bildiri)

42. Electrical parameteser of Aı/p-si (MS) structures with (3 Zn-PVA) interfacial layer using current-valtage and capacitance voltage (C-V) measurements at room temperature

ALTINDAL Ş., Karabulut B., USLU H., USLU İ.

4th International conference on materials science and nanotechnology for next generation, 28 - 30 Haziran 2017, (Özet Bildiri)

43. On the Profile of Frequency and Voltage Dependent Interface States and SeriesResistance in Au/(Co3O4-doped PVA)/n-Si Schottky Barrier Diodes (SBDs) at RoomTemperature

DEMİREZEN S., ALTINDAL Ş.

4th Internatıonal conference on materials science and nanotechnology for next generation(MSNG2017), 28 Haziran - 30 Temmuz 2017, (Özet Bildiri)

44. Electrical and Dielectric Properties in identically fabricated Al/Bi3Ti4O12/n-Si (MFS) structures by Capacitance/Conductance-Voltage Measurements

ÇETİNKAYA H. G., ALTINDAL Ş.

2nd International Advanced and Functional Materials Technologies (AFMAT 2016), 20 - 22 Ekim 2016, (Özet Bildiri)

45. Electrical and Dielectric Properties in identically fabricated Al Bi3Ti4O 2ln Si MFS structures by Capaci tance Conductance Vol tage Measurements

ÇETİNKAYA H. G., ALTINDAL Ş.

2nd international Advanced a6d Functıoniı Materials Technologies (AFMAT) 2016, 20 - 22 Ekim 2016, (Özet Bildiri)

46. Temperature dependent dielectric properties of Au Ti Al 2O3 n GaAs MIS structure in wide voltage range of 6V

Güçlü Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.

3st International NANOSCIENCE &NANOTECHNOLOGY FOR NEXTGENERATION(NaNoNG 2016) Conference, 20 - 22 Ekim 2016, (Özet Bildiri)

47. Interlayer Thickness Dependent WElectrical Characteristics off Al 3 Zn doped Al PVA p Si MPS structures at Room Temperatur

Badali Y., Nikravan A., Benli B. B., ALTINDAL Ş., USLU İ.

Ist International Undergraond Resorces and Energy Conference, Yozgat, Türkiye, 6 - 08 Kasım 2016, ss.84, (Özet Bildiri)

48. Electrical Characterization and Sources of Energy Losses in Solar Cells

ALTINDAL Ş., ÇETİNKAYA H. G.

lst International Underground Resources and Energy Conference, 6 - 08 Ekim 2016, (Özet Bildiri)

49. Electrical characteristics of GaAs AlGaAs Structures in thewide Frequency ranges

Bektaş C., GÜNEŞ M., LİŞESİVDİN B., Henini M., ALTINDAL Ş.

2nd International Congress on The World of Technology and Advanced Materials, Kırşehir, Türkiye, 28 Eylül - 02 Ekim 2016, (Tam Metin Bildiri)

50. A compare study on dielectric properties electric conductivity and electricalmodulus of Au n SiC structures with three different thickness interfacial ZndoppedPVA layers as function of thickness and frequency at room temperature

lapa h. e., aldharob m. h. a., kökçe a., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, (Özet Bildiri)

51. Influence Of Frequency And Applied Voltage On Dielectric Properties Electric ModulusAnd Electrical Conductivity In Ag 3Ru doped PVP n Si Structures

kaya g., badali y., nikravan a., ALTINDAL Ş., USLU İ.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, (Özet Bildiri)

52. On the dielectric relaxation electric modulus and ac electrical conductivityusingimpedance spectroscopy method in Au Zn dopped PVA n SiC MPS organic structures

lapa h. e., aldharob m. h. a., kökçe a., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, (Özet Bildiri)

53. Determining electrical and dielectric properties dependence on various frequencies of Al ZnS PVA p Si MPS structures

BARAZ N., YÜCEDAĞ İ., AzizianKalandaragh Y., ALTINDAL Ş.

2nd International Conference on Organic Electronic Material Technologies (OEMT2016), 17 - 19 Mayıs 2016, (Özet Bildiri)

54. Two diodes model and CdSe PVA interfacial layer effect on the forward bias current voltage I V characteristics of Au CdSe PVA n Si Schottky barrier diodes

ALTINDAL Ş., BİLKAN Ç.

2 nd International Conference on Organic Electronic Material Technologies, 17 - 19 Mayıs 2016, (Özet Bildiri)

55. Current Conduction Mechanisms CCMs in Au ZnO n Si Schottky Barrier Diodesin Wide Temperature Range

Badali Y., Kaya G., Nikravan A., ALTINDAL Ş., USLU İ.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, (Özet Bildiri)

56. The effects of surface states Nss series resistance Rs and interlayer on the current voltage and impedance voltage characteristics in Au n Si Ag Schottky barrier diodes SBDs

BİLKAN Ç., ALTINDAL Ş.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), 17 - 19 Mayıs 2016, (Özet Bildiri)

57. MPS Tipi Schootky Engel Diyotların SED Oda Sıcaklığındaki Elektriksel Özellikleri ve Yalıtkan 0 07 Zn katkılı PVA Tabakanın Etkisi

ERBİLEN TANRIKULU E., ALTINDAL Ş., USLU İ.

Adım Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016, (Özet Bildiri)

58. Frequency and Voltage Dependence of the Main Electrical Parameters of Au ZnO n Si Structures at Room Temperature

Nikravan A., Kaya G., Badali Y., ALTINDAL Ş., USLU İ.

İnternational Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016

59. The İnvestigation of Electrical Characteristics of Ag Ru Doped PVP n Si Structures as Function of Frequency at Room Temperatures

Kaya G., Badali Y., nikravan A., ALTINDAL Ş., USLU İ.

İnternational Physics Conference at the Anatolian Peak, Erzurum, Türkiye, 25 - 27 Şubat 2016

60. Influence of Frequency and Applied Voltage on Dielectric Properties Electric Modules and Electrical Conductivity in Au Zn n Si Structures

badali Y., Nikravan A., Kaya G., ALTINDAL Ş., USLU İ.

İnternational Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016

61. The preparation of different Interfaced Zn PVA Structures of Al p Si MPS and Analysis of I V and C G V electrical Characteristics

Benli B. B., ALTINDAL Ş., USLU İ.

İnternational Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016

62. On the Forward Bias Anomalous Peak and Negative Capacitance NC in Al ZnO p Si Structures at Room Temperatures

Aytimur A., ALTINDAL Ş., USLU İ.

İnternational Physics Conference at the Anatolian Peak, Erzurum, Türkiye, 25 - 27 Şubat 2016