Yayınlar & Eserler

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Current transport properties of (Au/Ni)/HfAlO3/n-Si metal-insulator-semiconductor junction

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.148, 2021 (SCI İndekslerine Giren Dergi) identifier identifier

The possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctions

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.21, ss.18640-18648, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer

Journal of Materials Science: Materials in Electronics, cilt.31, sa.17, ss.14466-14477, 2020 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Electric and dielectric parameters in Au/n-Si (MS) capacitors with metal oxide-polymer interlayer as function of frequency and voltage

Journal of Materials Science: Materials in Electronics, cilt.31, sa.18, ss.15589-15598, 2020 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.16, ss.13337-13343, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

Intersection behavior of the current-voltage (I-V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.16, ss.13167-13172, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes

Journal of Materials Science: Materials in Electronics, cilt.31, sa.14, ss.11665-11672, 2020 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer

Journal of Electronic Materials, cilt.49, sa.6, ss.3720-3727, 2020 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Investigation of the effect of different Bi2O3–x:PVA (x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters

Journal of Materials Science: Materials in Electronics, cilt.31, sa.10, ss.8033-8042, 2020 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure

Physica B: Condensed Matter, cilt.582, 2020 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, cilt.234, sa.3, ss.505-516, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

A Compare Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer

Journal of Inorganic and Organometallic Polymers and Materials, 2020 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Dielectric properties of Ag/Ru-0.03-PVA/n-Si structures

BULLETIN OF MATERIALS SCIENCE, cilt.42, sa.5, 2019 (SCI İndekslerine Giren Dergi) Creative Commons License identifier identifier

Dielectric characterization of BSA doped-PANI interlayered metal-semiconductor structures

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.15, ss.14224-14232, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.13, ss.12122-12129, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.12, ss.11536-11541, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors

INDIAN JOURNAL OF PHYSICS, cilt.93, sa.6, ss.739-747, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.7, ss.6491-6499, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage

Journal of Materials Science: Materials in Electronics, cilt.29, sa.15, ss.12735-12743, 2018 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures

JOURNAL OF ELECTRONIC MATERIALS, cilt.47, sa.7, ss.3510-3520, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures

PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, cilt.28, sa.3, ss.325-331, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.75, ss.124-129, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

On the anomalous peak and negative capacitance in the capacitance-voltage (C-V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.29, sa.4, ss.2890-2898, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.31, sa.27, 2017 (SCI İndekslerine Giren Dergi) identifier identifier

Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature

Journal of Materials Science: Materials in Electronics, cilt.28, sa.17, ss.12967-12976, 2017 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, sa.9, ss.6413-6420, 2017 (SCI İndekslerine Giren Dergi) identifier identifier

Frequency dependent C-V and G/omega-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, sa.6, ss.4951-4957, 2017 (SCI İndekslerine Giren Dergi) identifier identifier

Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, sa.5, ss.3987-3996, 2017 (SCI İndekslerine Giren Dergi) identifier identifier

Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures

Journal of Materials Science: Materials in Electronics, cilt.28, sa.2, ss.1315-1321, 2017 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO2/n-4H-SiC Structure

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.11, sa.5, ss.626-630, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.27, sa.8, ss.8340-8347, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method

IEEE Transactions on Electron Devices, cilt.63, sa.7, ss.2948-2955, 2016 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range

PHILOSOPHICAL MAGAZINE, cilt.95, sa.13, ss.1448-1461, 2015 (SCI İndekslerine Giren Dergi) identifier identifier

On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80-340 K

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.31, ss.256-261, 2015 (SCI İndekslerine Giren Dergi) identifier identifier

Current-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes

INDIAN JOURNAL OF PURE & APPLIED PHYSICS, cilt.53, sa.1, ss.56-65, 2015 (SCI İndekslerine Giren Dergi) identifier identifier

Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.28, ss.66-71, 2014 (SCI İndekslerine Giren Dergi) identifier identifier

On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC plus TCNQ)/p-Si structures

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.28, sa.23, 2014 (SCI İndekslerine Giren Dergi) identifier identifier

Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.590, ss.157-161, 2014 (SCI İndekslerine Giren Dergi) identifier identifier

A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.16, sa.6, ss.1865-1872, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer

CURRENT APPLIED PHYSICS, cilt.13, sa.8, ss.1630-1636, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

The effect of metal work function on the barrier height of metal/CdS/SnO2/In-Ga structures

CURRENT APPLIED PHYSICS, cilt.13, sa.7, ss.1306-1310, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

Trapping levels in TlGaSe2 single crystals

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.566, ss.108-111, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

Frequency and Voltage Dependence of Dielectric Loss of MgB2 Composites at Different Temperatures

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, cilt.26, sa.6, ss.2165-2170, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

A study of polymer-derived erbia-doped Bi2O3 nanocrystalline ceramic powders

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, cilt.66, sa.2, ss.317-323, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

A detailed study on current-voltage characteristics of Au/n-GaAs in wide temperature range

SENSORS AND ACTUATORS A-PHYSICAL, cilt.194, ss.259-268, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.16, sa.2, ss.344-351, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

The Main Electrical and Interfacial Properties of Benzotriazole and Fluorene Based Organic Devices

JOURNAL OF MACROMOLECULAR SCIENCE PART A-PURE AND APPLIED CHEMISTRY, cilt.50, sa.2, ss.168-174, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

Schottky diode properties of CuInSe2 films prepared by a two-step growth technique

SENSORS AND ACTUATORS A-PHYSICAL, cilt.185, ss.73-81, 2012 (SCI İndekslerine Giren Dergi) identifier identifier

Structural and electrical characterization of rectifying behavior in n-type/intrinsic ZnO-based homojunctions

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.177, sa.8, ss.588-593, 2012 (SCI İndekslerine Giren Dergi) identifier identifier

Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.177, sa.5, ss.416-420, 2012 (SCI İndekslerine Giren Dergi) identifier identifier

Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.15, sa.1, ss.41-46, 2012 (SCI İndekslerine Giren Dergi) identifier identifier

FUZZY CONTROL OF SEMI-BATCH POLYMERIZATION REACTOR WITH GENETIC ALGORITHM

JOURNAL OF THE FACULTY OF ENGINEERING AND ARCHITECTURE OF GAZI UNIVERSITY, cilt.26, sa.3, ss.613-621, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

Effect of Vanadium Substitution on the Dielectric Properties of Glass Ceramic Bi-2212 Superconductor

JOURNAL OF LOW TEMPERATURE PHYSICS, cilt.164, ss.102-114, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.509, sa.18, ss.5555-5561, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

Effects of illumination on I-V, C-V and G/w-V characteristics of Au/n-CdTe Schottky barrier diodes

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.13, ss.713-718, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices

SYNTHETIC METALS, cilt.161, ss.474-480, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

The Gaussian distribution of barrier height in Au/n-GaAs Schottky diodes at high temperatures

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.5, ss.438-442, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.509, sa.6, ss.2897-2902, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

MICROELECTRONICS RELIABILITY, cilt.51, sa.2, ss.370-375, 2011 (SCI İndekslerine Giren Dergi) Creative Commons License identifier identifier

The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.98, sa.6, ss.699-712, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.13, ss.53-58, 2011 (SCI İndekslerine Giren Dergi) identifier

The dependence of electrical properties of Al/NphAOEMA/PEDOT-PSS/ITO structures on temperature

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.12, ss.2132-2135, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

Illumination effect on electrical characteristics of organic-based Schottky barrier diodes

JOURNAL OF APPLIED PHYSICS, cilt.108, sa.10, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

AC electrical conductivity and dielectric properties of Al/NphAOEMA/PEDOT-PSS/ITO structure at different temperatures

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.11, ss.1779-1782, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

Temperature and frequency dependent dielectric properties of Au/Bi4Ti3O12/SiO2/Si (MFIS) structures

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.12, sa.10, ss.2139-2144, 2010 (SCI İndekslerine Giren Dergi) identifier

Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.8, ss.1225-1228, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.7, ss.1002-1007, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

SURFACE AND INTERFACE ANALYSIS, cilt.42, ss.1257-1260, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

CURRENT APPLIED PHYSICS, cilt.10, sa.3, ss.761-765, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

The effects of series resistance on the forward bias I-V characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.5, ss.616-619, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

The distribution of barrier heights in Au/n-Si Schottky barrier diodes from I-V-T measurements

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.4, ss.579-583, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

Frequency and Temperature Dependence of Dielectric Properties of Au/Polyvinyl Alcohol (Co, Ni-Doped)/n-Si Schottky Diodes

INTERNATIONAL JOURNAL OF POLYMERIC MATERIALS, cilt.59, sa.10, ss.739-756, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.12, sa.6, ss.224-232, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

Electrical Characteristics of Al/Polyindole Schottky Barrier Diodes. I. Temperature Dependence

JOURNAL OF APPLIED POLYMER SCIENCE, cilt.113, sa.5, ss.2955-2961, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range

MICROELECTRONICS RELIABILITY, cilt.49, sa.8, ss.904-911, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

SYNTHETIC METALS, cilt.159, sa.14, ss.1427-1432, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.24, sa.7, 2009 (SCI İndekslerine Giren Dergi) Creative Commons License identifier identifier

Gamma-ray irradiation effects on the interface states of MIS structures

SENSORS AND ACTUATORS A-PHYSICAL, cilt.151, sa.2, ss.168-172, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

Characterization of series resistance in the Sn/p-InP Schottky barrier diodes using temperature dependent C-V,G/w and DLTS

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.3, ss.171-174, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

Irradiation effects on the C-V and G/omega-V characteristics of Sn/p-Si (MS) structures

RADIATION PHYSICS AND CHEMISTRY, cilt.78, sa.2, ss.130-134, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

On the temperature dependent anomalous peak and negative capacitance in Au/n-InP Schottky barrier diodes

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.1, ss.56-59, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

Temperature dependent behavior of Sn/p-InP Schottky barrier diodes

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.2, sa.12, ss.766-769, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.2, sa.12, ss.838-841, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

Frequency and gate voltage effects on the dielectric properties of Au/SiO(2)/n-Si structures

MICROELECTRONIC ENGINEERING, cilt.85, sa.9, ss.1910-1914, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

The frequency dependent electrical characteristics of Sn/p-InP Schottky barrier diodes (SBDs)

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.2, sa.9, ss.525-529, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

Study on the frequency dependence of electrical and dielectric characteristics of Au/SnO2/n-Si (MIS) structures

MICROELECTRONIC ENGINEERING, cilt.85, sa.9, ss.1866-1871, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

Characterization of interface states at Au/SnO2/n-Si (MOS) structures

VACUUM, cilt.82, sa.11, ss.1203-1207, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes

JOURNAL OF APPLIED PHYSICS, cilt.103, sa.12, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

Effects of gamma-ray irradiation on the C-V and G/omega-V characteristics of Al/SiO2/p-Si (MIS) structures

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.266, sa.5, ss.791-796, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

The interface states analysis of the MIS structure as a function of frequency

MICROELECTRONIC ENGINEERING, cilt.85, sa.3, ss.542-547, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes

MICROELECTRONIC ENGINEERING, cilt.85, sa.2, ss.289-294, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, cilt.264, sa.1, ss.73-78, 2007 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

Analysis of interface states and series resistance at MIS structure irradiated under Co-60 gamma-rays

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.580, sa.3, ss.1588-1593, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

The C-V-f and G/omega-V-f characteristics of Au/SiO2/n-Si capacitors

PHYSICA B-CONDENSED MATTER, cilt.391, sa.1, ss.59-64, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

The effects of frequency and gamma-irradiation on the dielectric properties of MIS type Schottky diodes

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.254, sa.1, ss.113-117, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

Effects of beta-ray irradiation on the C-V and G/ω-V characteristics of Au/SiO2/n-Si (MOS) structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, cilt.254, sa.2, ss.273-277, 2007 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

On the profile of frequency dependent series resistance and dielectric constant in MIS structure

MICROELECTRONIC ENGINEERING, cilt.84, sa.1, ss.180-186, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

Co-60 gamma irradiation effects on the current-voltage (I-V) characteristics of Al/SiO2/P-Si (MIS) Schottky diodes

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.568, sa.2, ss.863-868, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

Electrical characteristics of Co-60 gamma-ray irradiated MIS Schottky diodes

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.252, sa.2, ss.257-262, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

Frequency and voltage dependent surface states and series resistance of novel Si solar cells

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, cilt.134, ss.291-295, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

APPLIED SURFACE SCIENCE, cilt.252, sa.22, ss.7749-7754, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

Electrical characterization of novel Si solar cells

THIN SOLID FILMS, cilt.511, ss.258-264, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

MICROELECTRONIC ENGINEERING, cilt.83, sa.3, ss.577-581, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

APPLIED SURFACE SCIENCE, cilt.252, sa.8, ss.2999-3010, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

Effects of Co-60 gamma-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.555, ss.260-265, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

Analysis of I-V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, cilt.122, sa.2, ss.133-139, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

MICROELECTRONIC ENGINEERING, cilt.81, sa.1, ss.140-149, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes

SOLID-STATE ELECTRONICS, cilt.49, sa.6, ss.1052-1054, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures

PHYSICA B-CONDENSED MATTER, cilt.357, ss.386-397, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

Au/SnO2/n-Si (MOS) structures response to radiation and frequency

MICROELECTRONICS JOURNAL, cilt.34, sa.11, ss.1043-1049, 2003 (SCI İndekslerine Giren Dergi) identifier identifier

Coherent infrared image converter based on GaAs and BSO crystals

IMAGING SCIENCE JOURNAL, cilt.49, sa.4, ss.197-203, 2001 (SCI İndekslerine Giren Dergi) identifier identifier

Characteristic features of an ionization system with semiconducting cathode

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.2, sa.3, ss.267-273, 1998 (SCI İndekslerine Giren Dergi) identifier identifier

Complex-radical cyclocopolymerization of allyl a-(N-maleimido)acetate with styrene and maleic anhydride

MACROMOLECULAR CHEMISTRY AND PHYSICS, cilt.198, sa.8, ss.2475-2487, 1997 (SCI İndekslerine Giren Dergi) identifier identifier

Photoelectrical properties of semiconductor in contact with gas discharge plasma

JOURNAL DE PHYSIQUE III, cilt.7, sa.5, ss.1039-1044, 1997 (SCI İndekslerine Giren Dergi) identifier identifier

A stable discharge glow in gas discharge system with semiconducting cathode

JOURNAL DE PHYSIQUE III, cilt.7, sa.4, ss.927-936, 1997 (SCI İndekslerine Giren Dergi) identifier identifier

The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films

JOURNAL OF INFORMATION RECORDING, cilt.23, sa.5, ss.437-445, 1997 (SCI İndekslerine Giren Dergi) identifier identifier

Enhancement of the sensitivity of an ionization type semiconductor photographic system

JOURNAL OF PHOTOGRAPHIC SCIENCE, cilt.44, sa.4, ss.110-115, 1996 (SCI İndekslerine Giren Dergi) identifier identifier

RECORDING THE RESISTANCE INHOMOGENEITY IN HIGH-RESISTIVITY SEMICONDUCTORS PLATES

INFRARED PHYSICS & TECHNOLOGY, cilt.36, sa.3, ss.661-668, 1995 (SCI İndekslerine Giren Dergi) identifier identifier

TEMPERATURE-DEPENDENT ELECTRICAL CHARACTERISTICS OF AL-SIOX-PSI SOLAR-CELLS

SOLAR ENERGY MATERIALS AND SOLAR CELLS, cilt.32, sa.2, ss.115-127, 1994 (SCI İndekslerine Giren Dergi) identifier identifier

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