Prof.Dr. ŞEMSETTİN ALTINDAL

The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters

Pirgholi-Givi G., ALTINDAL Ş. , Shahedi Asl M., Sabahi Namini A., Farazin J., Azizian-Kalandaragh Y.

Physica B: Condensed Matter, cilt.604, 2021 (SCI Expanded İndekslerine Giren Dergi)

Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures

Azizian-Kalandaragh Y. , Yucedag I., Demir G. E. , ALTINDAL Ş.

Journal of Molecular Structure, cilt.1224, 2021 (SCI Expanded İndekslerine Giren Dergi)

Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer

TATAROĞLU A. , ALTINDAL Ş. , Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics, 2021 (SCI Expanded İndekslerine Giren Dergi)

The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K

Guclu C. S. , Ozdemir A. F. , Aldemir D. A. , ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021 (SCI İndekslerine Giren Dergi)

Current transport properties of (Au/Ni)/HfAlO3/n-Si metal-insulator-semiconductor junction

Arslan E., Badali Y., Aalizadeh M., ALTINDAL Ş. , Ozbay E.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.148, 2021 (SCI İndekslerine Giren Dergi)

A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures

ÇİÇEK O., ALTINDAL Ş. , Azizian-Kalandaragh Y.

IEEE Sensors Journal, cilt.20, sa.23, ss.14081-14089, 2020 (SCI Expanded İndekslerine Giren Dergi)

On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80-360 K

Evcin Baydilli E., Kaymaz A., Uslu Tecimer H., Altindal Ş.

JOURNAL OF ELECTRONIC MATERIALS, cilt.49, sa.12, ss.7427-7434, 2020 (SCI İndekslerine Giren Dergi)

Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes

Lapa H. E. , KÖKCE A., ALDEMİR D. A. , ÖZDEMİR A. F. , ALTINDAL Ş.

INDIAN JOURNAL OF PHYSICS, cilt.94, sa.12, ss.1901-1908, 2020 (SCI İndekslerine Giren Dergi)

Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

Baydilli E. E. , Tan S. O. , Tecimer H. U. , Altindal Ş.

PHYSICA B-CONDENSED MATTER, cilt.598, 2020 (SCI İndekslerine Giren Dergi)

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

Sabahi Namini A., Shahedi Asl M., Pirgholi-Givi G., Delbari S. A. , Farazin J., ALTINDAL Ş. , et al.

Applied Physics A: Materials Science and Processing, cilt.126, sa.12, 2020 (SCI Expanded İndekslerine Giren Dergi)

The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer

Lapa H. E. , KÖKCE A., ALDEMİR D. A. , ÖZDEMİR A. F. , ALTINDAL Ş.

PHYSICA SCRIPTA, cilt.95, sa.11, 2020 (SCI İndekslerine Giren Dergi)

The possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctions

Elamen H., Badali Y., GÜNEŞER M. T. , ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.21, ss.18640-18648, 2020 (SCI İndekslerine Giren Dergi)

The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)

Evcin Baydilli E., Altindal Ş. , Tecimer H., Kaymaz A., Uslu Tecimer H.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.20, ss.17147-17157, 2020 (SCI İndekslerine Giren Dergi)

On the frequency and voltage-dependent main electrical parameters of the Au/ZnO/n-GaAs structures at room temperature by using various methods

Akin B., ALTINDAL Ş.

PHYSICA B-CONDENSED MATTER, cilt.594, 2020 (SCI İndekslerine Giren Dergi)

Investigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature

Ersoz Demir G., Yucedag I., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.19, ss.16324-16331, 2020 (SCI İndekslerine Giren Dergi)

A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer

Eroglu A., DEMİREZEN S., Azizian-Kalandaragh Y. , ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics, cilt.31, sa.17, ss.14466-14477, 2020 (SCI Expanded İndekslerine Giren Dergi)

The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H-SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements

Al-Dharob M. H. , KÖKCE A., ALDEMİR D. A. , ÖZDEMİR A. F. , ALTINDAL Ş.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.144, 2020 (SCI İndekslerine Giren Dergi)

Electric and dielectric parameters in Au/n-Si (MS) capacitors with metal oxide-polymer interlayer as function of frequency and voltage

DEMİREZEN S., Eroglu A., Azizian-Kalandaragh Y. , ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics, cilt.31, sa.18, ss.15589-15598, 2020 (SCI Expanded İndekslerine Giren Dergi)

Electrical and dielectric properties of Al/(PVP: Zn-TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements

Azizian-Kalandaragh Y. , Farazin J., ALTINDAL Ş. , Asl M. S. , Pirgholi-Givi G., Delbari S. A. , et al.

Applied Physics A: Materials Science and Processing, cilt.126, sa.8, 2020 (SCI Expanded İndekslerine Giren Dergi)

Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz

ALPTEKİN S., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.16, ss.13337-13343, 2020 (SCI İndekslerine Giren Dergi)

A comparison study regarding Al/p-Si and Al/(carbon nanofiber–PVP)/p-Si diodes: current/impedance–voltage (I/Z–V) characteristics

SEVGİLİ Ö., YILDIRIM M., Azizian-Kalandaragh Y. , ALTINDAL Ş.

Applied Physics A: Materials Science and Processing, cilt.126, sa.8, 2020 (SCI Expanded İndekslerine Giren Dergi)

Intersection behavior of the current-voltage (I-V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

Arslan E., Badali Y., ALTINDAL Ş. , ÖZBAY E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.16, ss.13167-13172, 2020 (SCI İndekslerine Giren Dergi)

Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes

Tataroglu A. , Altindal Ş. , Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics, cilt.31, sa.14, ss.11665-11672, 2020 (SCI Expanded İndekslerine Giren Dergi)

Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO-PVA)/p-Si Schottky diodes using capacitance and conductance measurements

KAYMAZ A., Tecimer H. U. , Baydilli E. E. , ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.11, ss.8349-8358, 2020 (SCI İndekslerine Giren Dergi)

Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer

Tascioglu I., SEVGİLİ Ö., Azizian-Kalandaragh Y. , ALTINDAL Ş.

Journal of Electronic Materials, cilt.49, sa.6, ss.3720-3727, 2020 (SCI Expanded İndekslerine Giren Dergi)

Investigation of the effect of different Bi2O3–x:PVA (x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters

Badali Y., Azizian-Kalandaragh Y. , USLU İ. , ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics, cilt.31, sa.10, ss.8033-8042, 2020 (SCI Expanded İndekslerine Giren Dergi)

C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure

Tataroglu A. , Altindal Ş. , Azizian-Kalandaragh Y.

Physica B: Condensed Matter, cilt.582, 2020 (SCI Expanded İndekslerine Giren Dergi)

Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage

Turk C. G. , TAN S. O. , ALTINDAL Ş. , İNEM B.

PHYSICA B-CONDENSED MATTER, cilt.582, 2020 (SCI İndekslerine Giren Dergi)

The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)

ALTINDAL Ş. , Farazin J., Pirgholi-Givi G., MARIL E., Azizian-Kalandaragh Y.

Physica B: Condensed Matter, cilt.582, 2020 (SCI Expanded İndekslerine Giren Dergi)

Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method

Lapa H. E. , KÖKCE A., ÖZDEMİR A. F. , ALTINDAL Ş.

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, cilt.234, sa.3, ss.505-516, 2020 (SCI İndekslerine Giren Dergi)

Ultrasound-Assisted Method for Preparation of Ag2S Nanostructures: Fabrication of Au/Ag2S-PVA/n-Si Schottky Barrier Diode and Exploring Their Electrical Properties

Badali Y., Azizian-Kalandaragh Y. , Akhlaghi E. A. , Altindal Ş.

Journal of Electronic Materials, cilt.49, sa.1, ss.444-453, 2020 (SCI Expanded İndekslerine Giren Dergi)

Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer

TATAROĞLU A. , ALTINDAL Ş. , Azizian-Kalandaragh Y.

Physica B: Condensed Matter, cilt.576, 2020 (SCI Expanded İndekslerine Giren Dergi)

Identifying of series resistance and interface states on rhenium/n-GaAs structures using C-V-T and G/-V-T characteristics in frequency ranged 50 kHz to 5 MHz

ÇİÇEK O., DURMUŞ H., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.1, ss.704-713, 2020 (SCI İndekslerine Giren Dergi)

Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures

Akbas A. M. , ÇİÇEK O., ALTINDAL Ş. , Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics, 2020 (SCI Expanded İndekslerine Giren Dergi)

A Compare Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer

Tataroglu A. , Buyukbas Ulusan A., Altindal Ş. , Azizian-Kalandaragh Y.

Journal of Inorganic and Organometallic Polymers and Materials, 2020 (SCI Expanded İndekslerine Giren Dergi)

Investigation of the efficiencies of the (SnO2-PVA) interlayer in Au/n-Si (MS) SDs on electrical characteristics at room temperature by comparison

BİLKAN Ç., Azizian-Kalandaragh Y. , SEVGİLİ Ö., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics, cilt.30, sa.23, ss.20479-20488, 2019 (SCI Expanded İndekslerine Giren Dergi)

Determination of current transport and trap states density in AlInGaN/GaN heterostructures

Arslan E., Ural S., ALTINDAL Ş. , ÖZBAY E.

MICROELECTRONICS RELIABILITY, cilt.103, 2019 (SCI İndekslerine Giren Dergi)

Dielectric properties of Ag/Ru-0.03-PVA/n-Si structures

Badali Y., Kocyigit S., USLU İ. , ALTINDAL Ş.

BULLETIN OF MATERIALS SCIENCE, cilt.42, sa.5, 2019 (SCI İndekslerine Giren Dergi)

Synthesis of boron and rare earth stabilized graphene doped polyvinylidene fluoride (PVDF) nanocomposite piezoelectric materials

Badali Y., Kocyigit S., Aytimur A., ALTINDAL Ş. , USLU İ.

POLYMER COMPOSITES, cilt.40, sa.9, ss.3623-3633, 2019 (SCI İndekslerine Giren Dergi)

Dielectric characterization of BSA doped-PANI interlayered metal-semiconductor structures

KARAOĞLAN N., Tecimer H. U. , ALTINDAL Ş. , BİNDAL C.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.15, ss.14224-14232, 2019 (SCI İndekslerine Giren Dergi)

Examination of dielectric response of Au/HgS-PVA/n-Si (MPS)structure by impedance spectroscopy method

SEVGİLİ Ö., Tascioglu I., Boughdachi S., Azizian-Kalandaragh Y. , ALTINDAL Ş.

Physica B: Condensed Matter, cilt.566, ss.125-135, 2019 (SCI Expanded İndekslerine Giren Dergi)

A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures

Buyukbas-Ulusan A., Tascioglu I., Tataroglu A. , Yakuphanoglu F., Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.13, ss.12122-12129, 2019 (SCI İndekslerine Giren Dergi)

The Structural and Electrical Properties of the Au/n-Si (MS) Diodes with Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method

Altindal Ş. , Sevgili O., Azizian-Kalandaragh Y.

IEEE Transactions on Electron Devices, cilt.66, sa.7, ss.3103-3109, 2019 (SCI Expanded İndekslerine Giren Dergi)

Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure

Tascioglu I., Tan S. O. , Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.12, ss.11536-11541, 2019 (SCI İndekslerine Giren Dergi)

The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors

Demirezen S., Tanrikulu E. , Altindal Ş.

INDIAN JOURNAL OF PHYSICS, cilt.93, sa.6, ss.739-747, 2019 (SCI İndekslerine Giren Dergi)

Fabrication, structural and electrical characterization of Au/ (CuSe-polyvinyl alcohol)/n-Si (MPS) Schottky barrier structures

Mirzanezhad-Asl R., Phirouznia A., Altindal Ş. , Badali Y., Azizian-Kalandaragh Y.

Physica B: Condensed Matter, cilt.561, ss.1-8, 2019 (SCI Expanded İndekslerine Giren Dergi)

On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K

DURMUŞ H., YILDIRIM M., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.9, ss.9029-9037, 2019 (SCI İndekslerine Giren Dergi)

The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics

ÇETİNKAYA H. G. , SEVGİLİ Ö., ALTINDAL Ş.

PHYSICA B-CONDENSED MATTER, cilt.560, ss.91-96, 2019 (SCI İndekslerine Giren Dergi)

A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer

ALPTEKİN S., ALTINDAL Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.7, ss.6491-6499, 2019 (SCI İndekslerine Giren Dergi)

Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer

Arslan E., ALTINDAL Ş. , Ural S., Kayal O. A. , Ozturk M., ÖZBAY E.

JOURNAL OF ELECTRONIC MATERIALS, cilt.48, sa.2, ss.887-897, 2019 (SCI İndekslerine Giren Dergi)

A comparison of electrical parameters of Au/n-Si and Au/(CoSO 4 –PVP)/n-Si structures (SBDs) to determine the effect of (CoSO 4 –PVP) organic interlayer at room temperature

ALTINDAL Ş. , Sevgili O., Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics, 2019 (SCI Expanded İndekslerine Giren Dergi)

Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Guclu C. S. , Ozdemir A. F. , Karabulut A., Kokce A., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.89, ss.26-31, 2019 (SCI İndekslerine Giren Dergi)

Determination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structure

ALPTEKİN S., TAN S. O. , ALTINDAL Ş.

IEEE TRANSACTIONS ON NANOTECHNOLOGY, cilt.18, ss.1196-1199, 2019 (SCI İndekslerine Giren Dergi)

Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K

Boughdachi S., Badali Y., Azizian-Kalandaragh Y. , Altindal Ş.

Journal of Electronic Materials, cilt.47, sa.12, ss.6945-6953, 2018 (SCI Expanded İndekslerine Giren Dergi)

Formation of ZnO nanopowders by the simple ultrasound-assisted method: Exploring the dielectric and electric properties of the Au/(ZnO-PVA)/n-Si structure

Nezhadesm-Kohardafchahi S., Farjami-Shayesteh S., Badali Y., Altindal Ş. , Jamshidi-Ghozlu M. A. , Azizian-Kalandaragh Y.

Materials Science in Semiconductor Processing, cilt.86, ss.173-180, 2018 (SCI Expanded İndekslerine Giren Dergi)

Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures

Demir G. E. , Yucedag I., Azizian-Kalandaragh Y. , ALTINDAL Ş.

Journal of Electronic Materials, cilt.47, sa.11, ss.6600-6606, 2018 (SCI Expanded İndekslerine Giren Dergi)

Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

Arslan E., ALTINDAL Ş. , Ural S., Kayal O. A. , Ozturk M., ÖZBAY E.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, cilt.36, sa.6, 2018 (SCI İndekslerine Giren Dergi)

The investigation of current-conduction mechanisms (CCMs) in Au/(0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements

Al-Dharob M. H. , Lapa H. E. , Kokce A., Ozdemir A. F. , ALDEMİR D. A. , Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.85, ss.98-105, 2018 (SCI İndekslerine Giren Dergi)

Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures

Akhlaghi E. A. , Badali Y., ALTINDAL Ş. , Azizian-Kalandaragh Y.

Physica B: Condensed Matter, cilt.546, ss.93-98, 2018 (SCI Expanded İndekslerine Giren Dergi)

Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer

Tascioglu I., TAN S. O. , YAKUPHANOĞLU F., ALTINDAL Ş.

JOURNAL OF ELECTRONIC MATERIALS, cilt.47, sa.10, ss.6059-6066, 2018 (SCI İndekslerine Giren Dergi)

Evaluation of Electric and Dielectric Properties of Metal-Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer

MARIL E., TAN S. O. , ALTINDAL Ş. , USLU İ.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.65, sa.9, ss.3901-3908, 2018 (SCI İndekslerine Giren Dergi)

Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

Tecimer H. U. , Alper M. A. , Tecimer H., Tan S. O. , Altindal Ş.

POLYMER BULLETIN, cilt.75, sa.9, ss.4257-4271, 2018 (SCI İndekslerine Giren Dergi)

Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage

BARAZ N., Yucedag I., Azizian-Kalandaragh Y. , ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics, cilt.29, sa.15, ss.12735-12743, 2018 (SCI Expanded İndekslerine Giren Dergi)

Preparation of (CuS–PVA) interlayer and the investigation their structural, morphological and optical properties and frequency dependent electrical characteristics of Au/(CuS–PVA)/n-Si (MPS) structures

ERBİLEN TANRIKULU E. , ALTINDAL Ş. , Azizian-Kalandaragh Y.

Journal of Materials Science: Materials in Electronics, cilt.29, sa.14, ss.11801-11811, 2018 (SCI Expanded İndekslerine Giren Dergi)

Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures

Badali Y., Nikravan A., ALTINDAL Ş. , USLU İ.

JOURNAL OF ELECTRONIC MATERIALS, cilt.47, sa.7, ss.3510-3520, 2018 (SCI İndekslerine Giren Dergi)

Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures

Badali Y., ALTINDAL Ş. , USLU İ.

PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, cilt.28, sa.3, ss.325-331, 2018 (SCI İndekslerine Giren Dergi)

A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

Lapa H. E. , KÖKCE A., ÖZDEMİR A. F. , USLU İ. , ALTINDAL Ş.

BULLETIN OF MATERIALS SCIENCE, cilt.41, sa.3, 2018 (SCI İndekslerine Giren Dergi)

Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires

Kaya A., Polat K. G. , Mayet A. S. , Mao H., ALTINDAL Ş. , Islam M. S.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.75, ss.124-129, 2018 (SCI İndekslerine Giren Dergi)

On the anomalous peak and negative capacitance in the capacitance-voltage (C-V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure

Tanrikulu E. , Demirezen S., Altindal Ş. , Uslu I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.29, sa.4, ss.2890-2898, 2018 (SCI İndekslerine Giren Dergi)

Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes

Badrinezhad L., BİLKAN Ç., Azizian-Kalandaragh Y. , Nematollahzadeh A., Orak I., ALTINDAL Ş.

International Journal of Modern Physics B, cilt.32, sa.1, 2018 (SCI Expanded İndekslerine Giren Dergi)

On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics

Ulusan A. B. , TATAROĞLU A. , Azizian-Kalandaragh Y. , Altindal Ş.

Journal of Materials Science: Materials in Electronics, cilt.29, sa.1, ss.159-170, 2018 (SCI Expanded İndekslerine Giren Dergi)

Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures

Cetinkaya H. G. , Yildirim M., Durmus P., Altindal Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.728, ss.896-901, 2017 (SCI İndekslerine Giren Dergi)

On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage

Nikravan A., Badali Y., ALTINDAL Ş. , Uslu I., Orak I.

JOURNAL OF ELECTRONIC MATERIALS, cilt.46, sa.10, ss.5728-5736, 2017 (SCI İndekslerine Giren Dergi)

Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer

DURMUŞ P. , ALTINDAL Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.31, sa.27, 2017 (SCI İndekslerine Giren Dergi)

Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room

Lapa H. E. , KÖKCE A., Al-Dharob M., Orak I., ÖZDEMİR A. F. , ALTINDAL Ş.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.80, sa.1, 2017 (SCI İndekslerine Giren Dergi)

Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity

Cetinkaya H. G. , Yildirim M., Durmus P., Altindal Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.721, ss.750-756, 2017 (SCI İndekslerine Giren Dergi)

The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature

Demirezen S., Kaya A., Altindal Ş. , Uslu I.

POLYMER BULLETIN, cilt.74, sa.9, ss.3765-3781, 2017 (SCI İndekslerine Giren Dergi)

Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature

Demirezen S., Orak I., Azizian-Kalandaragh Y. , Altindal Ş.

Journal of Materials Science: Materials in Electronics, cilt.28, sa.17, ss.12967-12976, 2017 (SCI Expanded İndekslerine Giren Dergi)

On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes

Bilkan C., Badali Y., Fotouhi-Shablou S., Azizian-Kalandaragh Y. , Altindal Ş.

Applied Physics A: Materials Science and Processing, cilt.123, sa.8, 2017 (SCI Expanded İndekslerine Giren Dergi)

Controlling the electrical characteristics of Au/n-Si structure with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature

BARAZ N., Yucedag I., DEMİR A., Ersoez G., ALTINDAL Ş. , KANDAZ M.

POLYMERS FOR ADVANCED TECHNOLOGIES, cilt.28, sa.8, ss.952-957, 2017 (SCI İndekslerine Giren Dergi)

Investigation of frequency and voltage dependence surface states and series resistance profiles using admittance measurements in Al/p-Si with Co3O4-PVA interlayer structures

BİLKAN Ç., ALTINDAL Ş. , Azizian-Kalandaragh Y.

Physica B: Condensed Matter, cilt.515, ss.28-33, 2017 (SCI Expanded İndekslerine Giren Dergi)

Investigation of the C-V characteristics that provides linearity in a large reverse bias region and the effects of series resistance, surface states and interlayer in Au/n-Si/Ag diodes

BİLKAN Ç., ALTINDAL Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.708, ss.464-469, 2017 (SCI İndekslerine Giren Dergi)

Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer

Cetinkaya H. G. , Altindal Ş. , Orak I., Uslu I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, sa.11, ss.7905-7911, 2017 (SCI İndekslerine Giren Dergi)

Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes

Ersoz G., Yucedag I., Bayrakdar S., ALTINDAL Ş. , Gumus A.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, sa.9, ss.6413-6420, 2017 (SCI İndekslerine Giren Dergi)

Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

Tascioglu I., ÖZMEN Ö. T. , Sagban H. M. , Yaglioglu E., Altindal Ş.

JOURNAL OF ELECTRONIC MATERIALS, cilt.46, sa.4, ss.2379-2386, 2017 (SCI İndekslerine Giren Dergi)

Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

Yildirim M., Sahin C., Altindal Ş. , Durmus P.

JOURNAL OF ELECTRONIC MATERIALS, cilt.46, sa.3, ss.1895-1901, 2017 (SCI İndekslerine Giren Dergi)

Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures

Cicek O., Tecimer H. U. , Tan S. O. , Tecimer H., Orak I., Altindal Ş.

COMPOSITES PART B-ENGINEERING, cilt.113, ss.14-23, 2017 (SCI İndekslerine Giren Dergi)

Frequency dependent C-V and G/omega-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes

Tan S. O. , Tecimer H. U. , Cicek O., Tecimer H., Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, sa.6, ss.4951-4957, 2017 (SCI İndekslerine Giren Dergi)

Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

Moraki K., Bengi S., Zeyrek S., Bulbul M. M. , Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, sa.5, ss.3987-3996, 2017 (SCI İndekslerine Giren Dergi)

Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures

BARAZ N., Yucedag I., Azizian-Kalandaragh Y. , ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics, cilt.28, sa.2, ss.1315-1321, 2017 (SCI Expanded İndekslerine Giren Dergi)

Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)type Schottky barrier diodes in wide temperature range

Guclu C. S. , ÖZDEMİR A. F. , ALTINDAL Ş.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.122, sa.12, 2016 (SCI İndekslerine Giren Dergi)

Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co3O4-PVA/p-Si structures

BİLKAN Ç., Azizian-Kalandaragh Y. , ALTINDAL Ş. , Shokrani-Havigh R.

Physica B: Condensed Matter, cilt.500, ss.154-160, 2016 (SCI Expanded İndekslerine Giren Dergi)

A Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si/ and Au/Biphenylsubs-CoPc/n-Si/ Type Schottky Barrier Diodes

DEMİR A., Yucedag I., Ersoz G., ALTINDAL Ş. , BARAZ N., KANDAZ M.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.11, sa.5, ss.620-625, 2016 (SCI İndekslerine Giren Dergi)

Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO2/n-4H-SiC Structure

Alialy S., Yildiz D. E. , Altindal Ş.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.11, sa.5, ss.626-630, 2016 (SCI İndekslerine Giren Dergi)

Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions

Cicek O., Tecimer H. U. , Tan S. O. , Tecimer H., Altindal Ş. , Uslu I.

COMPOSITES PART B-ENGINEERING, cilt.98, ss.260-268, 2016 (SCI İndekslerine Giren Dergi)

Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities

Tan S. O. , Tecimer H. U. , Cicek O., Tecimer H., Orak I., Altindal Ş.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.27, sa.8, ss.8340-8347, 2016 (SCI İndekslerine Giren Dergi)

Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method

Ersoz G., Yucedag I., Azizian-Kalandaragh Y. , Orak I., ALTINDAL Ş.

IEEE Transactions on Electron Devices, cilt.63, sa.7, ss.2948-2955, 2016 (SCI Expanded İndekslerine Giren Dergi)

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3 Interfacial Layer at Room Temperature

Guclu C. S. , Ozdemir A. F. , Kokce A., Altindal Ş.

ACTA PHYSICA POLONICA A, cilt.130, sa.1, ss.325-330, 2016 (SCI İndekslerine Giren Dergi)

A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer

Kaya A., Cetinkaya H. G. , Altindal Ş. , Uslu I.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.30, sa.16, 2016 (SCI İndekslerine Giren Dergi)

The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature

Kaya A., Maril E., Altindal Ş. , Uslu I.

MICROELECTRONIC ENGINEERING, cilt.149, ss.166-171, 2016 (SCI İndekslerine Giren Dergi)

On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure

Maril E., Kaya A., Cetinkaya H. G. , Kocyigit S., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.39, ss.332-338, 2015 (SCI İndekslerine Giren Dergi)

Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage

Cetinkaya H. G. , Kaya A., Altindal Ş. , Kocyigit S.

CANADIAN JOURNAL OF PHYSICS, cilt.93, sa.10, ss.1213-1220, 2015 (SCI İndekslerine Giren Dergi)

Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes

Tanrikulu E. , Yildiz D. E. , Gunen A., Altindal Ş.

PHYSICA SCRIPTA, cilt.90, sa.9, 2015 (SCI İndekslerine Giren Dergi)

Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes

Gumus A., Ersoz G., Yucedag I., Bayrakdar S., ALTINDAL Ş.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, cilt.67, sa.5, ss.889-895, 2015 (SCI İndekslerine Giren Dergi)

Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis

Cetinkaya H. G. , Alialy S., Altindal Ş. , Kaya A., Uslu I.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.26, sa.5, ss.3186-3195, 2015 (SCI İndekslerine Giren Dergi)

The effect of Mo-doped PVC plus TCNQ interfacial layer on the electrical properties of Au/PVC plus TCNQ/p-Si structures at room temperature

Demirezen S., Kaya A., Vural O., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.33, ss.140-148, 2015 (SCI İndekslerine Giren Dergi)

Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range

Alialy S., Kaya A., Maril E., Altindal Ş. , Uslu I.

PHILOSOPHICAL MAGAZINE, cilt.95, sa.13, ss.1448-1461, 2015 (SCI İndekslerine Giren Dergi)

Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage

Yucedag I., Ersoz G., Gumus A., ALTINDAL Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.29, sa.13, 2015 (SCI İndekslerine Giren Dergi)

A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current-voltage (I-V) and capacitance-voltage (C-V) measurements

Bilkan C., Zeyrek S., San S. E. , Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.32, ss.137-144, 2015 (SCI İndekslerine Giren Dergi)

Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

ŞAFAK ASAR Y. , ASAR T. , ALTINDAL Ş. , ÖZÇELİK S.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.628, ss.442-449, 2015 (SCI İndekslerine Giren Dergi)

On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature

Yucedag I., Kaya A., Altindal Ş.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.10, sa.2, ss.173-178, 2015 (SCI İndekslerine Giren Dergi)

On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80-340 K

Maril E., Kaya A., Kocyigit S., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.31, ss.256-261, 2015 (SCI İndekslerine Giren Dergi)

Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures

ŞAFAK ASAR Y. , ASAR T. , ALTINDAL Ş. , ÖZÇELİK S.

PHILOSOPHICAL MAGAZINE, cilt.95, sa.26, ss.2885-2898, 2015 (SCI İndekslerine Giren Dergi)

Current-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes

Kaya A., Sevgili O., Altindal Ş. , Ozturk M. K.

INDIAN JOURNAL OF PURE & APPLIED PHYSICS, cilt.53, sa.1, ss.56-65, 2015 (SCI İndekslerine Giren Dergi)

On the negative capacitance behavior in the forward bias of Au/n-4H-SiC (MS) and comparison between MS and Au/TiO2/n-4H-SiC (MIS) type diodes both in dark and under 200 W illumination intensity

Cetinkaya H. G. , Yildiz D. E. , Altindal Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.29, sa.1, 2015 (SCI İndekslerine Giren Dergi)

Electrical and dielectric properties and intersection behavior of G/omega-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature

Yucedag I., Kaya A., ALTINDAL Ş. , USLU İ.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, cilt.65, sa.12, ss.2082-2089, 2014 (SCI İndekslerine Giren Dergi)

Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K

Gumus A., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.28, ss.66-71, 2014 (SCI İndekslerine Giren Dergi)

Electrical Characteristics of Au/PVA (x-doped)/n-Si: Comparison Study on the Effect of Dopant Type in PVA

Dökme İ. , Altındal Ş.

FIBERS AND POLYMERS, cilt.15, ss.2253-2259, 2014 (SCI İndekslerine Giren Dergi)

On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC plus TCNQ)/p-Si structures

Yucedag I., Kaya A., Altindal Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.28, sa.23, 2014 (SCI İndekslerine Giren Dergi)

Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

Alialy S., Altindal Ş. , Tanrikulu E. , Yildiz D. E.

JOURNAL OF APPLIED PHYSICS, cilt.116, sa.8, 2014 (SCI İndekslerine Giren Dergi)

Investigation of Current-Voltage Characteristics and Current Conduction Mechanisms in Composites of Polyvinyl Alcohol and Bismuth Oxide

YILDIRIM M., GÖKÇEN M., TUNÇ T., USLU İ. , ALTINDAL Ş.

POLYMER ENGINEERING AND SCIENCE, cilt.54, sa.8, ss.1811-1816, 2014 (SCI İndekslerine Giren Dergi)

Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method

Kaya A., Sevgili O., Altindal Ş.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.28, sa.17, 2014 (SCI İndekslerine Giren Dergi)

The effect of frequency and temperature on capacitance/conductance-voltage (C/G-V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs)

Demirezen S., Ozavci E., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.23, ss.1-6, 2014 (SCI İndekslerine Giren Dergi)

The current-voltage and capacitance-voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

Ozerli H., Karteri I., KARATAŞ Ş., ALTINDAL Ş.

MATERIALS RESEARCH BULLETIN, cilt.53, ss.211-217, 2014 (SCI İndekslerine Giren Dergi)

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

Yucedag I., Kaya A., ALTINDAL Ş. , USLU İ.

CHINESE PHYSICS B, cilt.23, sa.4, 2014 (SCI İndekslerine Giren Dergi)

Dielectric and optical properties of CdS-polymer nanocomposites prepared by the successive ionic layer adsorption and reaction (SILAR) method

Azizian-Kalandaragh Y. , AYDEMİR U., ALTINDAL Ş.

Journal of Electronic Materials, cilt.43, sa.4, ss.1226-1231, 2014 (SCI Expanded İndekslerine Giren Dergi)

Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes

Tascioglu I., Farooq W. A. , TURAN R., ALTINDAL Ş. , YAKUPHANOĞLU F.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.590, ss.157-161, 2014 (SCI İndekslerine Giren Dergi)

On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)

Tecimer H., Uslu H., Alahmed Z. A. , Yakuphanoglu F., Altindal Ş.

COMPOSITES PART B-ENGINEERING, cilt.57, ss.25-30, 2014 (SCI İndekslerine Giren Dergi)

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

Kaya A., Zeyrek S., SAN S. E. , Altindal Ş.

CHINESE PHYSICS B, cilt.23, sa.1, 2014 (SCI İndekslerine Giren Dergi)

A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes

AYDEMİR U., Tascioglu I., ALTINDAL Ş. , USLU İ.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.16, sa.6, ss.1865-1872, 2013 (SCI İndekslerine Giren Dergi)

Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p-Si and Al/Bi4Ti3O12/p-Si structures by using the admittance spectroscopy method

YILDIRIM M., DURMUŞ P. , ALTINDAL Ş.

CHINESE PHYSICS B, cilt.22, sa.10, 2013 (SCI İndekslerine Giren Dergi)

Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer

Durmus P., Yildirim M., Altindal Ş.

CURRENT APPLIED PHYSICS, cilt.13, sa.8, ss.1630-1636, 2013 (SCI İndekslerine Giren Dergi)

Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)

Tecimer H., Turut A., Uslu H., Altindal Ş. , Uslu I.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.199, ss.194-201, 2013 (SCI İndekslerine Giren Dergi)

The effect of series resistance and interface states on the frequency dependent C-V and G/w-V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes

Zeyrek S., Acaroglu E., Altindal Ş. , Birdogan S., Bulbul M. M.

CURRENT APPLIED PHYSICS, cilt.13, sa.7, ss.1225-1230, 2013 (SCI İndekslerine Giren Dergi)

The effect of metal work function on the barrier height of metal/CdS/SnO2/In-Ga structures

Tascioglu I., ALTINDAL Ş. , POLAT İ., BACAKSIZ E.

CURRENT APPLIED PHYSICS, cilt.13, sa.7, ss.1306-1310, 2013 (SCI İndekslerine Giren Dergi)

Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures

Cetinkaya H. G. , Tecimer H., Uslu H., Altindal Ş.

CURRENT APPLIED PHYSICS, cilt.13, sa.6, ss.1150-1156, 2013 (SCI İndekslerine Giren Dergi)

The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range

Korucu D., TÜRÜT A., ALTINDAL Ş.

CURRENT APPLIED PHYSICS, cilt.13, sa.6, ss.1101-1108, 2013 (SCI İndekslerine Giren Dergi)

Trapping levels in TlGaSe2 single crystals

Ozdemir S., ALTINDAL Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.566, ss.108-111, 2013 (SCI İndekslerine Giren Dergi)

Frequency and Voltage Dependence of Dielectric Loss of MgB2 Composites at Different Temperatures

Korucu D., Ertekin E., BELENLİ İ., ALTINDAL Ş.

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, cilt.26, sa.6, ss.2165-2170, 2013 (SCI İndekslerine Giren Dergi)

A study of polymer-derived erbia-doped Bi2O3 nanocrystalline ceramic powders

Aytimur A., Tascioglu I., ARI M., USLU İ. , DAĞDEMİR Y., Durmus S., et al.

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, cilt.66, sa.2, ss.317-323, 2013 (SCI İndekslerine Giren Dergi)

A detailed study on current-voltage characteristics of Au/n-GaAs in wide temperature range

Ozavci E., Demirezen S., AYDEMİR U., Altindal Ş.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.194, ss.259-268, 2013 (SCI İndekslerine Giren Dergi)

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Korucu D., Turut A., TURAN R., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.16, sa.2, ss.344-351, 2013 (SCI İndekslerine Giren Dergi)

Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier

Afandiyeva I. M. , Demirezen S., Altindal Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.552, ss.423-429, 2013 (SCI İndekslerine Giren Dergi)

The Main Electrical and Interfacial Properties of Benzotriazole and Fluorene Based Organic Devices

YILDIZ D. E. , Apaydin D. H. , Kaya E., ALTINDAL Ş. , ÇIRPAN A.

JOURNAL OF MACROMOLECULAR SCIENCE PART A-PURE AND APPLIED CHEMISTRY, cilt.50, sa.2, ss.168-174, 2013 (SCI İndekslerine Giren Dergi)

On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity in Al/SiO2/p-Si (MOS) Capacitors

Kaya A., ALTINDAL Ş. , ŞAFAK ASAR Y. , Sonmez Z.

CHINESE PHYSICS LETTERS, cilt.30, sa.1, 2013 (SCI İndekslerine Giren Dergi)

Two diodes model and illumination effect on the forward and reverse bias I-V and C-V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature

Demirezen S., Altindal Ş. , Uslu I.

CURRENT APPLIED PHYSICS, cilt.13, sa.1, ss.53-59, 2013 (SCI İndekslerine Giren Dergi)

Temperature dependent conductivity and structural properties of sol-gel prepared holmium doped Bi2O3 nanoceramic powder

Tascioglu I., Ari M., Uslu I., Kocyigit S., Dagdemir Y., Corumlu V., et al.

CERAMICS INTERNATIONAL, cilt.38, sa.8, ss.6455-6460, 2012 (SCI İndekslerine Giren Dergi)

Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode

Tascioglu I., SOYLU M., ALTINDAL Ş. , Al-Ghamdi A. A. , Yakuphanoglu F.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.541, ss.462-467, 2012 (SCI İndekslerine Giren Dergi)

Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K

Korucu D., Efeoglu H., Turut A., Altindal Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.15, sa.5, ss.480-485, 2012 (SCI İndekslerine Giren Dergi)

Schottky diode properties of CuInSe2 films prepared by a two-step growth technique

Tecimer H., Aksu S., Uslu H., Atasoy Y., Bacaksiz E., Altindal Ş.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.185, ss.73-81, 2012 (SCI İndekslerine Giren Dergi)

On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique

Korucu D., Turut A., TURAN R., Altindal Ş.

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, cilt.55, sa.9, ss.1604-1612, 2012 (SCI İndekslerine Giren Dergi)

The effects of temperature, radiation, and illumination on current-voltage characteristics of Au/PVA(Co, Zn-doped)/n-Si Schottky diodes

DÖKME İ. , ALTINDAL Ş. , USLU İ.

JOURNAL OF APPLIED POLYMER SCIENCE, cilt.125, sa.2, ss.1185-1192, 2012 (SCI İndekslerine Giren Dergi)

Structural and electrical characterization of rectifying behavior in n-type/intrinsic ZnO-based homojunctions

Yilmaz S., POLAT İ., ALTINDAL Ş. , BACAKSIZ E.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.177, sa.8, ss.588-593, 2012 (SCI İndekslerine Giren Dergi)

Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier

Afandiyeva I. M. , Bulbul M. M. , Altindal Ş. , Bengi S.

MICROELECTRONIC ENGINEERING, cilt.93, ss.50-55, 2012 (SCI İndekslerine Giren Dergi)

The effect of gamma irradiation on electrical and dielectric properties of Al-TiW-Pd2Si/n-Si Schottky diode at room temperature

DÖKME İ. , ALTINDAL Ş.

CURRENT APPLIED PHYSICS, cilt.12, sa.3, ss.860-864, 2012 (SCI İndekslerine Giren Dergi)

The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature

Uslu H., YILDIRIM M., ALTINDAL Ş. , DURMUŞ P.

RADIATION PHYSICS AND CHEMISTRY, cilt.81, sa.4, ss.362-369, 2012 (SCI İndekslerine Giren Dergi)

On the temperature dependent dielectric properties, conductivity and resistivity of MIS structures at 1 MHz

Eroglu A., TATAROĞLU A. , Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.91, ss.154-158, 2012 (SCI İndekslerine Giren Dergi)

Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer

Dökme İ. , Yıldız D. E. , Altındal Ş.

ADVANCES IN POLYMER TECHNOLOGY, cilt.31, ss.63-70, 2012 (SCI İndekslerine Giren Dergi)

The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)

Gokcen M., Tunc T., Altindal Ş. , Uslu I.

CURRENT APPLIED PHYSICS, cilt.12, sa.2, ss.525-530, 2012 (SCI İndekslerine Giren Dergi)

Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

Gokcen M., Tunc T., Altindal Ş. , Uslu I.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.177, sa.5, ss.416-420, 2012 (SCI İndekslerine Giren Dergi)

Does fludarabine increase the incidence of sinusoidal obstruction syndrome when combined with Bu/Cy during conditioning?

Suyani E., Altindal Ş. , Aki S. Z. , Sucak G. T.

CLINICAL TRANSPLANTATION, cilt.26, sa.2, 2012 (SCI İndekslerine Giren Dergi)

Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics

VURAL Ö., ŞAFAK ASAR Y. , Turut A., ALTINDAL Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.513, ss.107-111, 2012 (SCI İndekslerine Giren Dergi)

On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode

ŞAFAK ASAR Y. , SOYLU M., YAKUPHANOĞLU F., ALTINDAL Ş.

JOURNAL OF APPLIED PHYSICS, cilt.111, sa.3, 2012 (SCI İndekslerine Giren Dergi)

Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures

Gokcen M., Altuntas H., Altindal Ş. , Ozcelik S.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.15, sa.1, ss.41-46, 2012 (SCI İndekslerine Giren Dergi)

Effect of series resistance and interface states on the I-V, C-V and G/omega-V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature

Demirezen S., Sonmez Z., AYDEMİR U., Altindal Ş.

CURRENT APPLIED PHYSICS, cilt.12, sa.1, ss.266-272, 2012 (SCI İndekslerine Giren Dergi)

The density of interface states and their relaxation times in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

Bulbul M. M. , Altindal Ş. , Parlakturk F., TATAROĞLU A.

SURFACE AND INTERFACE ANALYSIS, cilt.43, sa.13, ss.1561-1565, 2011 (SCI İndekslerine Giren Dergi)

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods

Demirezen S., Altindal Ş. , Ozcelik S. , Ozbay E.

MICROELECTRONICS RELIABILITY, cilt.51, sa.12, ss.2153-2162, 2011 (SCI İndekslerine Giren Dergi)

Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al-TiW-Pd2Si/n-Si Schottky Device at Two Frequencies

DÖKME İ. , ALTINDAL Ş.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.58, sa.11, ss.4042-4048, 2011 (SCI İndekslerine Giren Dergi)

Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer

Gokcen M., Altindal Ş. , Karaman M., AYDEMİR U.

PHYSICA B-CONDENSED MATTER, cilt.406, sa.21, ss.4119-4123, 2011 (SCI İndekslerine Giren Dergi)

Comparison of Pre- and Post-therapy 18F-FDG PET/CT Findings with The Findings of Clinical Follow-up in Patients with Hodgkin Lymphoma

Akdemir Ü. Ö. , Kapucu L. Ö. , Oz O., Suyani E., Tonyali O., Altindal Ş. , et al.

EUROPEAN JOURNAL OF NUCLEAR MEDICINE AND MOLECULAR IMAGING, cilt.38, 2011 (SCI İndekslerine Giren Dergi)

Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer

Altuntas H., Altindal Ş. , Corekci S., Ozturk M. K. , Ozcelik S.

SEMICONDUCTORS, cilt.45, sa.10, ss.1286-1290, 2011 (SCI İndekslerine Giren Dergi)

Negative Dielectric Constant and Electrical Conductivity of Au/n-Si (111) Schottky Barrier Diodes with PVA/Ni,Zn Interfacial Layer

Tunc T., Dokme İ. , Altindal Ş. , Uslu I.

JOURNAL OF APPLIED POLYMER SCIENCE, cilt.122, sa.1, ss.265-272, 2011 (SCI İndekslerine Giren Dergi)

Preparation and Dielectric Properties of Polyvinyl Alcohol (Co, Zn Acetate) Fiber/n-Si and Polyvinyl Alcohol (Ni, Zn Acetate)/n-Si Schottky Diodes

TUNÇ T., Uslu H., ALTINDAL Ş.

FIBERS AND POLYMERS, cilt.12, sa.7, ss.886-892, 2011 (SCI İndekslerine Giren Dergi)

FUZZY CONTROL OF SEMI-BATCH POLYMERIZATION REACTOR WITH GENETIC ALGORITHM

ALTINTEN A. , Altindal Ş. , Erdogan S., HAPOĞLU H.

JOURNAL OF THE FACULTY OF ENGINEERING AND ARCHITECTURE OF GAZI UNIVERSITY, cilt.26, sa.3, ss.613-621, 2011 (SCI İndekslerine Giren Dergi)

Effect of Vanadium Substitution on the Dielectric Properties of Glass Ceramic Bi-2212 Superconductor

Cavdar Ş. , KORALAY H. , Altindal Ş.

JOURNAL OF LOW TEMPERATURE PHYSICS, cilt.164, ss.102-114, 2011 (SCI İndekslerine Giren Dergi)

Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

TUNÇ T., ALTINDAL Ş. , USLU İ. , DÖKME İ. , Uslu H.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.14, sa.2, ss.139-145, 2011 (SCI İndekslerine Giren Dergi)

On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures

Uslu H., ALTINDAL Ş. , POLAT İ., Bayrak H., BACAKSIZ E.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.509, sa.18, ss.5555-5561, 2011 (SCI İndekslerine Giren Dergi)

Effects of illumination on I-V, C-V and G/w-V characteristics of Au/n-CdTe Schottky barrier diodes

Kanbur H., Altindal Ş. , Mammadov T., Safak Y.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.13, ss.713-718, 2011 (SCI İndekslerine Giren Dergi)

The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures

ALTINDAL Ş. , Uslu H.

JOURNAL OF APPLIED PHYSICS, cilt.109, sa.7, 2011 (SCI İndekslerine Giren Dergi)

The Illumination Intensity and Applied Bias Voltage on Dielectric Properties of Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes

Uslu H., ALTINDAL Ş. , TUNÇ T., Uslu I., Mammadov T. S.

JOURNAL OF APPLIED POLYMER SCIENCE, cilt.120, sa.1, ss.322-328, 2011 (SCI İndekslerine Giren Dergi)

The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices

DÖKME İ. , Tunc T., Uslu I., Altindal Ş.

SYNTHETIC METALS, cilt.161, ss.474-480, 2011 (SCI İndekslerine Giren Dergi)

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Tekeli Z., Gokcen M., Altindal Ş. , Ozcelik S. , Ozbay E.

MICROELECTRONICS RELIABILITY, cilt.51, sa.3, ss.581-586, 2011 (SCI İndekslerine Giren Dergi)

Analysis of the forward and reverse bias I-V characteristics on Au/PVA: Zn/n-Si Schottky barrier diodes in the wide temperature range

Tascioglu I., AYDEMİR U., ALTINDAL Ş. , KINACI B., ÖZÇELİK S.

JOURNAL OF APPLIED PHYSICS, cilt.109, sa.5, 2011 (SCI İndekslerine Giren Dergi)

The Gaussian distribution of barrier height in Au/n-GaAs Schottky diodes at high temperatures

TATAROĞLU A. , Altindal Ş. , Pur F. Z. , Ataseven T., Sezgin S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.5, ss.438-442, 2011 (SCI İndekslerine Giren Dergi)

On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p-Si (MIS) structures

Pakma O., Serin N., Serin T., Altindal Ş.

PHYSICA B-CONDENSED MATTER, cilt.406, sa.4, ss.771-776, 2011 (SCI İndekslerine Giren Dergi)

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

Bengi A., Uslu H., Asar T., Altindal Ş. , Cetin S. Ş. , Mammadov T. S. , et al.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.509, sa.6, ss.2897-2902, 2011 (SCI İndekslerine Giren Dergi)

Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

Arslan E., Butun S., ŞAFAK ASAR Y. , Uslu H., Tascioglu I., ALTINDAL Ş. , et al.

MICROELECTRONICS RELIABILITY, cilt.51, sa.2, ss.370-375, 2011 (SCI İndekslerine Giren Dergi)

Anomalous Peak in the Forward-Bias C-V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

TUNÇ T., ALTINDAL Ş. , DÖKME İ. , Uslu H.

JOURNAL OF ELECTRONIC MATERIALS, cilt.40, sa.2, ss.157-164, 2011 (SCI İndekslerine Giren Dergi)

On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness

Yildirim M., Eroglu A., Altindal Ş. , Durmus P.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.13, ss.98-105, 2011 (SCI İndekslerine Giren Dergi)

The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes

Ozdemir S., DÖKME İ. , ALTINDAL Ş.

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.98, sa.6, ss.699-712, 2011 (SCI İndekslerine Giren Dergi)

A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer

Yildiz D. E. , Altindal Ş.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.13, ss.53-58, 2011 (SCI İndekslerine Giren Dergi)

The dependence of electrical properties of Al/NphAOEMA/PEDOT-PSS/ITO structures on temperature

Sahingoz R., Cavus H. K. , Altindal Ş. , Soykan C., Dokme İ.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.12, ss.2132-2135, 2010 (SCI İndekslerine Giren Dergi)

Illumination effect on electrical characteristics of organic-based Schottky barrier diodes

Uslu H., ALTINDAL Ş. , DÖKME İ.

JOURNAL OF APPLIED PHYSICS, cilt.108, sa.10, 2010 (SCI İndekslerine Giren Dergi)

AC electrical conductivity and dielectric properties of Al/NphAOEMA/PEDOT-PSS/ITO structure at different temperatures

Sahingoz R., Cavus H. K. , Altindal Ş.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.11, ss.1779-1782, 2010 (SCI İndekslerine Giren Dergi)

Temperature and frequency dependent dielectric properties of Au/Bi4Ti3O12/SiO2/Si (MFIS) structures

Altindal Ş. , Parlakturk F., TATAROĞLU A. , Bulbul M. M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.12, sa.10, ss.2139-2144, 2010 (SCI İndekslerine Giren Dergi)

The Effect of Gamma Irradiation on Electrical Characteristics of Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes

Tascioglu I., Uslu H., Altindal Ş. , Durmus P., Dokme İ. , Tunc T.

JOURNAL OF APPLIED POLYMER SCIENCE, cilt.118, sa.1, ss.596-603, 2010 (SCI İndekslerine Giren Dergi)

The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

Tascioglu I., AYDEMİR U., ALTINDAL Ş.

JOURNAL OF APPLIED PHYSICS, cilt.108, sa.6, 2010 (SCI İndekslerine Giren Dergi)

A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

Bengi A., Aydemir U., Altindal Ş. , Özen Y. , Ozcelik S.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.505, ss.628-633, 2010 (SCI İndekslerine Giren Dergi)

Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers

Uslu H., Bengi A., Cetin S. Ş. , AYDEMİR U., Altindal Ş. , Aghaliyeva S. T. , et al.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.507, sa.1, ss.190-195, 2010 (SCI İndekslerine Giren Dergi)

Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes

Bulbul M. M. , Bengi S., Dokme İ. , Altindal Ş. , Tunc T.

JOURNAL OF APPLIED PHYSICS, cilt.108, sa.3, 2010 (SCI İndekslerine Giren Dergi)

Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

Dokme İ. , Tunc T., Altindal Ş. , Uslu I.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.8, ss.1225-1228, 2010 (SCI İndekslerine Giren Dergi)

The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes

Uslu H., Altindal Ş. , AYDEMİR U., Dokme İ. , Afandiyeva I. M.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.503, sa.1, ss.96-102, 2010 (SCI İndekslerine Giren Dergi)

Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range

Yildiz D. E. , Altindal Ş.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.7, ss.1002-1007, 2010 (SCI İndekslerine Giren Dergi)

Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer

Tunc T., Dokme İ. , Altindal Ş. , Uslu I.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.7, ss.947-950, 2010 (SCI İndekslerine Giren Dergi)

Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

Altuntas H., Bengi A., Asar T., Aydemir U., Sarikavak B. , Özen Y. , et al.

SURFACE AND INTERFACE ANALYSIS, cilt.42, ss.1257-1260, 2010 (SCI İndekslerine Giren Dergi)

The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AlN/GaN heterostructures

ALTINDAL Ş. , ŞAFAK ASAR Y. , Tascioglu I., ÖZBAY E.

SURFACE AND INTERFACE ANALYSIS, cilt.42, ss.803-806, 2010 (SCI İndekslerine Giren Dergi)

Illumination effect on I-V, C-V and G/w-V characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature

Uslu H., Dokme İ. , Afandiyeva I. M. , Altindal Ş.

SURFACE AND INTERFACE ANALYSIS, cilt.42, ss.807-811, 2010 (SCI İndekslerine Giren Dergi)

Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

Vural O., Safak Y. , Altindal Ş. , Turut A.

CURRENT APPLIED PHYSICS, cilt.10, sa.3, ss.761-765, 2010 (SCI İndekslerine Giren Dergi)

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan E., ŞAFAK ASAR Y. , ALTINDAL Ş. , Kelekci O., ÖZBAY E.

JOURNAL OF NON-CRYSTALLINE SOLIDS, cilt.356, ss.1006-1011, 2010 (SCI İndekslerine Giren Dergi)

The effects of series resistance on the forward bias I-V characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures

TATAROĞLU A. , Altindal Ş. , AYDEMİR U., Uslu H.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.5, ss.616-619, 2010 (SCI İndekslerine Giren Dergi)

The distribution of barrier heights in Au/n-Si Schottky barrier diodes from I-V-T measurements

Durmus P., Cuha B., Altindal Ş. , AYDEMİR U.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.4, ss.579-583, 2010 (SCI İndekslerine Giren Dergi)

The role of Co-60 gamma-ray irradiation on the interface states and series resistance in MIS structures

Tascioglu I., Tataroğlu A. , Özbay A. , Altındal Ş.

RADIATION PHYSICS AND CHEMISTRY, cilt.79, ss.457-461, 2010 (SCI İndekslerine Giren Dergi)

The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature

Uslu H., Safak Y. , Tascioglu I., Altindal Ş.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.12, sa.2, ss.262-266, 2010 (SCI İndekslerine Giren Dergi)

The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes

Yildiz D. E. , Altindal Ş. , Tekeli Z., Ozer M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.13, sa.1, ss.34-40, 2010 (SCI İndekslerine Giren Dergi)

On the temperature dependent profile of interface states and series resistance characteristics in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures

Demirezen S., Altindal Ş.

PHYSICA B-CONDENSED MATTER, cilt.405, sa.4, ss.1130-1138, 2010 (SCI İndekslerine Giren Dergi)

Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

Dokme İ. , Altindal Ş. , Tunc T., Uslu I.

MICROELECTRONICS RELIABILITY, cilt.50, sa.1, ss.39-44, 2010 (SCI İndekslerine Giren Dergi)

Frequency and Temperature Dependence of Dielectric Properties of Au/Polyvinyl Alcohol (Co, Ni-Doped)/n-Si Schottky Diodes

TUNÇ T., Uslu I., DÖKME İ. , ALTINDAL Ş. , Uslu H.

INTERNATIONAL JOURNAL OF POLYMERIC MATERIALS, cilt.59, sa.10, ss.739-756, 2010 (SCI İndekslerine Giren Dergi)

Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range

Altuntas H., Bengi A., AYDEMİR U., Asar T., Cetin S. Ş. , Kars İ. , et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.12, sa.6, ss.224-232, 2009 (SCI İndekslerine Giren Dergi)

The effect of series resistance and surface states on current-voltage (I-V) characteristics of Au/n-GaAs/GaAs structures at wide temperature range

Bengi A., Mammadov T. S. , Ozcelik S. , Altindal Ş.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.11, ss.1155-1160, 2009 (SCI İndekslerine Giren Dergi)

Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current-voltage and admittance-voltage characteristics

Altindal Ş. , Yucedag I., TATAROĞLU A.

VACUUM, cilt.84, sa.3, ss.363-368, 2009 (SCI İndekslerine Giren Dergi)

The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I-V characteristics

TATAROĞLU A. , Altindal Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.484, ss.405-409, 2009 (SCI İndekslerine Giren Dergi)

Electrical Characteristics of Al/Polyindole Schottky Barrier Diodes. I. Temperature Dependence

Altindal Ş. , SARI B. , ÜNAL H. İ. , Yavas N.

JOURNAL OF APPLIED POLYMER SCIENCE, cilt.113, sa.5, ss.2955-2961, 2009 (SCI İndekslerine Giren Dergi)

A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range

Altuntas H., Altindal Ş. , Shtrikman H., Ozcelik S.

MICROELECTRONICS RELIABILITY, cilt.49, sa.8, ss.904-911, 2009 (SCI İndekslerine Giren Dergi)

Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

ÖZDEMİR A. F. , ALDEMİR D. A. , KÖKCE A., Altindal Ş.

SYNTHETIC METALS, cilt.159, sa.14, ss.1427-1432, 2009 (SCI İndekslerine Giren Dergi)

Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

Arslan E., ALTINDAL Ş. , ÖZÇELİK S. , ÖZBAY E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.24, sa.7, 2009 (SCI İndekslerine Giren Dergi)

The distribution of barrier heights in MIS type Schottky diodes from current-voltage-temperature (I-V-T) measurements

TATAROĞLU A. , ALTINDAL Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.479, ss.893-897, 2009 (SCI İndekslerine Giren Dergi)

The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure

Oezdemir A. F. , Kotan Z., ALDEMİR D. A. , Altindal Ş.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.46, sa.2, 2009 (SCI İndekslerine Giren Dergi)

The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol-gel method

Pakma O., Serin N., Serin T., Altindal Ş.

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, cilt.50, sa.1, ss.28-34, 2009 (SCI İndekslerine Giren Dergi)

Gamma-ray irradiation effects on the interface states of MIS structures

TATAROĞLU A. , Altindal Ş.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.151, sa.2, ss.168-172, 2009 (SCI İndekslerine Giren Dergi)

Characterization of series resistance in the Sn/p-InP Schottky barrier diodes using temperature dependent C-V,G/w and DLTS

Korucu D., Altindal Ş. , Mammadov T. S. , Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.3, ss.171-174, 2009 (SCI İndekslerine Giren Dergi)

Electrical characteristics of Au/n-GaAs Schottky barrier diodes with and without SiO2 insulator layer at room temperature

Altuntas H., Altindal Ş. , Oezcelik S. , Shtrikman H.

VACUUM, cilt.83, sa.7, ss.1060-1065, 2009 (SCI İndekslerine Giren Dergi)

Irradiation effects on the C-V and G/omega-V characteristics of Sn/p-Si (MS) structures

Karatas S., Tueruet A., Altindal Ş.

RADIATION PHYSICS AND CHEMISTRY, cilt.78, sa.2, ss.130-134, 2009 (SCI İndekslerine Giren Dergi)

Origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n=InP Schottky Barier Diodes (SBDs)

Korucu D., Altindal Ş. , Mammadov T. S. , Ozcelik S.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.11, sa.2, ss.192-196, 2009 (SCI İndekslerine Giren Dergi)

On the temperature dependent anomalous peak and negative capacitance in Au/n-InP Schottky barrier diodes

Korucu D., Altindal Ş. , Mammadov T. S. , Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.1, ss.56-59, 2009 (SCI İndekslerine Giren Dergi)

Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures

Arslan E., ALTINDAL Ş. , Oezcelik S. , ÖZBAY E.

JOURNAL OF APPLIED PHYSICS, cilt.105, sa.2, 2009 (SCI İndekslerine Giren Dergi)

MBE-growth and characterization of InxGa1-xAs/GaAs (x=0.15) superlattice

Sarikavak B. , Oeztuerk M. K. , Altuntas H., Mammedov T. S. , Altindal Ş. , Oezcelik S.

REVISTA MEXICANA DE FISICA, cilt.54, sa.6, ss.416-421, 2008 (SCI İndekslerine Giren Dergi)

Temperature dependent behavior of Sn/p-InP Schottky barrier diodes

Korucu D., Altindal Ş. , Mammadov T. S. , Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.2, sa.12, ss.766-769, 2008 (SCI İndekslerine Giren Dergi)

Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures

Goekcen M., Altuntas H., Altindal Ş.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.2, sa.12, ss.838-841, 2008 (SCI İndekslerine Giren Dergi)

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range

Zeyrek S., Buelbuel M. M. , Altindal Ş. , Baykul M. C. , Yuezer H.

BRAZILIAN JOURNAL OF PHYSICS, cilt.38, sa.4, ss.591-597, 2008 (SCI İndekslerine Giren Dergi)

The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures

Tekeli Z., Altindal Ş. , Çakmak M. , Ozcelik S. , Ozbay E.

MICROELECTRONIC ENGINEERING, cilt.85, ss.2316-2321, 2008 (SCI İndekslerine Giren Dergi)

Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods

TATAROĞLU A. , Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, sa.11, ss.2256-2260, 2008 (SCI İndekslerine Giren Dergi)

Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p(+) (MOS) structures

Pakma O., Serin N., Serin T., Altindal Ş.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.41, sa.21, 2008 (SCI İndekslerine Giren Dergi)

The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures

Pakma O., Serin N., Serin T., Altindal Ş.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.23, sa.10, 2008 (SCI İndekslerine Giren Dergi)

Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range

Bengi A., Altindal Ş. , Ozcelik S. , Agaliyeva S. T. , Mammadov T. S.

VACUUM, cilt.83, sa.2, ss.276-281, 2008 (SCI İndekslerine Giren Dergi)

Frequency and gate voltage effects on the dielectric properties of Au/SiO(2)/n-Si structures

Dokme İ. , ALTINDAL Ş. , Gokcen M.

MICROELECTRONIC ENGINEERING, cilt.85, sa.9, ss.1910-1914, 2008 (SCI İndekslerine Giren Dergi)

The frequency dependent electrical characteristics of Sn/p-InP Schottky barrier diodes (SBDs)

Korucu D., Altindal Ş. , Mammadov T. S. , Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.2, sa.9, ss.525-529, 2008 (SCI İndekslerine Giren Dergi)

Study on the frequency dependence of electrical and dielectric characteristics of Au/SnO2/n-Si (MIS) structures

TATAROĞLU A. , Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, sa.9, ss.1866-1871, 2008 (SCI İndekslerine Giren Dergi)

Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures

TATAROĞLU A. , Yuecedag I., Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, sa.7, ss.1518-1523, 2008 (SCI İndekslerine Giren Dergi)

On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/P-Si (MIS) Schottky diodes

Altindal Ş. , Kanbur H., Yuecedag I., TATAROĞLU A.

MICROELECTRONIC ENGINEERING, cilt.85, sa.7, ss.1495-1501, 2008 (SCI İndekslerine Giren Dergi)

The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures

Pakma O., Serin N., Serin T., Altindal Ş.

JOURNAL OF APPLIED PHYSICS, cilt.104, sa.1, 2008 (SCI İndekslerine Giren Dergi)

Characterization of interface states at Au/SnO2/n-Si (MOS) structures

TATAROĞLU A. , Altindal Ş.

VACUUM, cilt.82, sa.11, ss.1203-1207, 2008 (SCI İndekslerine Giren Dergi)

The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures

Altindal Ş. , Parlaktuerk F., TATAROĞLU A. , PARLAK M., Sarmasov S. N. , Agasiev A. A.

VACUUM, cilt.82, sa.11, ss.1246-1250, 2008 (SCI İndekslerine Giren Dergi)

Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes

Yildiz D. E. , Altindal Ş. , Kanbur H.

JOURNAL OF APPLIED PHYSICS, cilt.103, sa.12, 2008 (SCI İndekslerine Giren Dergi)

Effects of gamma-ray irradiation on the C-V and G/omega-V characteristics of Al/SiO2/p-Si (MIS) structures

Dokme İ. , DURMUŞ P. , ALTINDAL Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.266, sa.5, ss.791-796, 2008 (SCI İndekslerine Giren Dergi)

The interface states analysis of the MIS structure as a function of frequency

TATAROĞLU A. , Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, sa.3, ss.542-547, 2008 (SCI İndekslerine Giren Dergi)

The distribution of the barrier height in Al-TiW-Pd2Si/n-Si Schottky diodes from I-V-T measurements

Dokme İ. , ALTINDAL Ş. , Afandiyeva I. M.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.23, sa.3, 2008 (SCI İndekslerine Giren Dergi)

Effects of illumination and Co-60 gamma-ray irradiation on the electrical characteristics of porous silicon solar cells

Tuezuen O., Altindal Ş. , Oktik S.

RENEWABLE ENERGY, cilt.33, sa.2, ss.286-292, 2008 (SCI İndekslerine Giren Dergi)

Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures

Afandiyeva I. M. , Doekme İ. , Altindal Ş. , Buelbuel M. M. , TATAROĞLU A.

MICROELECTRONIC ENGINEERING, cilt.85, sa.2, ss.247-252, 2008 (SCI İndekslerine Giren Dergi)

On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes

Yildiz D. E. , Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, sa.2, ss.289-294, 2008 (SCI İndekslerine Giren Dergi)

The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/n-Si structure using I-V, C-V and G/omega-V measurements

Afandiyeva I. M. , Doekme İ. , Altindal Ş. , Abdullayeva L. K. , Askerov S. G.

MICROELECTRONIC ENGINEERING, cilt.85, sa.2, ss.365-370, 2008 (SCI İndekslerine Giren Dergi)

On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

Parlaktuerk F., Altindal Ş. , TATAROĞLU A. , PARLAK M., Agasiev A.

MICROELECTRONIC ENGINEERING, cilt.85, sa.1, ss.81-88, 2008 (SCI İndekslerine Giren Dergi)

Analysis of interface states and series resistance of MIS Schottky diodes using the current-voltage (I-V) characteristics

TATAROĞLU A. , Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, sa.1, ss.233-237, 2008 (SCI İndekslerine Giren Dergi)

The effect of Co-60 (gamma-ray) irradiation Au/SnO2/n-Si on the electrical characteristics of (MIS) structures

Goekcen M., TATAROĞLU A. , Altindal Ş. , Buelbuel M. M.

RADIATION PHYSICS AND CHEMISTRY, cilt.77, sa.1, ss.74-78, 2008 (SCI İndekslerine Giren Dergi)

The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)

Altindal Ş. , Kanbur H., TATAROĞLU A. , Buelbuel M. M.

PHYSICA B-CONDENSED MATTER, cilt.399, sa.2, ss.146-154, 2007 (SCI İndekslerine Giren Dergi)

Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures

TATAROĞLU A. , Altindal Ş. , Boeluekdemir M. H. , Tanir G.

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, cilt.264, sa.1, ss.73-78, 2007 (SCI Expanded İndekslerine Giren Dergi)

Analysis of interface states and series resistance at MIS structure irradiated under Co-60 gamma-rays

TATAROĞLU A. , Altindal Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.580, sa.3, ss.1588-1593, 2007 (SCI İndekslerine Giren Dergi)

The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AlN/GaN heterostructures at high temperatures

Tekeli Z., Altindal Ş. , ÇAKMAK M. , Oezaelik S. , Caliskan D., Oezbay E.

JOURNAL OF APPLIED PHYSICS, cilt.102, sa.5, 2007 (SCI İndekslerine Giren Dergi)

Current-voltage characteristics of Al/Rhodamine-101/n-GaAs and Cu/Rhodamine-101/n-GaAs rectifier contacts

Vural O., Yildirim N., Altindal Ş. , Tueruet A.

SYNTHETIC METALS, cilt.157, ss.679-683, 2007 (SCI İndekslerine Giren Dergi)

Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes

Ozer M., Yildiz D. E. , Altindal Ş. , Bulbul M. M.

SOLID-STATE ELECTRONICS, cilt.51, sa.6, ss.941-949, 2007 (SCI İndekslerine Giren Dergi)

Gaussian distribution of inhomogeneous barrier height in Al0.24Ga0.76As/GaAs structures

Bengi A., Altindal Ş. , Ozcelik S. , Mammadov T. S.

PHYSICA B-CONDENSED MATTER, cilt.396, ss.22-28, 2007 (SCI İndekslerine Giren Dergi)

Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I-V-T and C-V-T measurements

Karatas S., Altindal Ş. , Turut A., Cakar M.

PHYSICA B-CONDENSED MATTER, cilt.392, ss.43-50, 2007 (SCI İndekslerine Giren Dergi)

On the profile of frequency and voltage dependent interface states and series resistance in MIS structures

Dokme İ. , Altindal Ş.

PHYSICA B-CONDENSED MATTER, cilt.393, ss.328-335, 2007 (SCI İndekslerine Giren Dergi)

Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures

Altindal Ş. , Kanbur H., Yildiz D. E. , Parlak M.

APPLIED SURFACE SCIENCE, cilt.253, sa.11, ss.5056-5061, 2007 (SCI İndekslerine Giren Dergi)

The C-V-f and G/omega-V-f characteristics of Au/SiO2/n-Si capacitors

Dokme İ. , Altindal Ş.

PHYSICA B-CONDENSED MATTER, cilt.391, sa.1, ss.59-64, 2007 (SCI İndekslerine Giren Dergi)

The effects of frequency and gamma-irradiation on the dielectric properties of MIS type Schottky diodes

TATAROĞLU A. , Altindal Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.254, sa.1, ss.113-117, 2007 (SCI İndekslerine Giren Dergi)

Effects of beta-ray irradiation on the C-V and G/ω-V characteristics of Au/SiO2/n-Si (MOS) structures

TATAROĞLU A. , Bolukdemir M. H. , Tanir G., Altindal Ş. , Bulbul M. M.

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, cilt.254, sa.2, ss.273-277, 2007 (SCI Expanded İndekslerine Giren Dergi)

On the profile of frequency dependent series resistance and dielectric constant in MIS structure

Yucedag I., Altindal Ş. , TATAROĞLU A.

MICROELECTRONIC ENGINEERING, cilt.84, sa.1, ss.180-186, 2007 (SCI İndekslerine Giren Dergi)

Co-60 gamma irradiation effects on the current-voltage (I-V) characteristics of Al/SiO2/P-Si (MIS) Schottky diodes

TATAROĞLU A. , Altindal Ş. , Bulbul M. M.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.568, sa.2, ss.863-868, 2006 (SCI İndekslerine Giren Dergi)

Electrical characteristics of Co-60 gamma-ray irradiated MIS Schottky diodes

TATAROĞLU A. , Altindal Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.252, sa.2, ss.257-262, 2006 (SCI İndekslerine Giren Dergi)

Frequency and voltage dependent surface states and series resistance of novel Si solar cells

Tuzun O., Altindal Ş. , Oktik S.

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, cilt.134, ss.291-295, 2006 (SCI İndekslerine Giren Dergi)

The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

Dokme İ. , Altindal Ş. , Bulbul M. M.

APPLIED SURFACE SCIENCE, cilt.252, sa.22, ss.7749-7754, 2006 (SCI İndekslerine Giren Dergi)

On the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures

Dokme İ. , Altindal Ş.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.21, sa.8, ss.1053-1058, 2006 (SCI İndekslerine Giren Dergi)

Electrical characterization of novel Si solar cells

Tuzun O., Oktik S., Altindal Ş. , Mammadov T. S.

THIN SOLID FILMS, cilt.511, ss.258-264, 2006 (SCI İndekslerine Giren Dergi)

Characterization of current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) features of Al/SiO2/p-Si (MIS) Schottky diodes

TATAROĞLU A. , Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.83, sa.3, ss.582-588, 2006 (SCI İndekslerine Giren Dergi)

The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range

Altindal Ş. , Dokme İ. , Bulbul M., Yalcin N., Serin T.

MICROELECTRONIC ENGINEERING, cilt.83, sa.3, ss.499-505, 2006 (SCI İndekslerine Giren Dergi)

On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

Bulbul M., Zeyrek S., Altindal Ş. , Yuzer H.

MICROELECTRONIC ENGINEERING, cilt.83, sa.3, ss.577-581, 2006 (SCI İndekslerine Giren Dergi)

Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

Zeyrek S., Altindal Ş. , Yuzer H., Bulbul M.

APPLIED SURFACE SCIENCE, cilt.252, sa.8, ss.2999-3010, 2006 (SCI İndekslerine Giren Dergi)

The effect of interface states, excess capacitance and series resistance in the Al/SiO2/P-Si Schottky diodes

Kanbur H., Altindal Ş. , TATAROĞLU A.

APPLIED SURFACE SCIENCE, cilt.252, sa.5, ss.1732-1738, 2005 (SCI İndekslerine Giren Dergi)

Effects of Co-60 gamma-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures

Karatas S., Turut A., Altindal Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.555, ss.260-265, 2005 (SCI İndekslerine Giren Dergi)

Analysis of I-V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

Karatas S., Altindal Ş.

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, cilt.122, sa.2, ss.133-139, 2005 (SCI İndekslerine Giren Dergi)

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

TATAROĞLU A. , Altindal Ş. , Bulbul M.

MICROELECTRONIC ENGINEERING, cilt.81, sa.1, ss.140-149, 2005 (SCI İndekslerine Giren Dergi)

Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes

Karatas S., Altindal Ş.

SOLID-STATE ELECTRONICS, cilt.49, sa.6, ss.1052-1054, 2005 (SCI İndekslerine Giren Dergi)

Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures

Karatas S., Altindal Ş. , Cakar M.

PHYSICA B-CONDENSED MATTER, cilt.357, ss.386-397, 2005 (SCI İndekslerine Giren Dergi)

Density of interface states, excess capacitance and series resistance in the metal-insulator-semiconductor (MIS) solar cells

Altindal Ş. , TATAROĞLU A. , Dokme İ.

SOLAR ENERGY MATERIALS AND SOLAR CELLS, cilt.85, sa.3, ss.345-358, 2005 (SCI İndekslerine Giren Dergi)

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