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Yayın
569
Açık Erişim
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BM Sürdürülebilir Kalkınma Amaçları
Duyurular & Dokümanlar
Tez Dosyaları
Dosya İndir
Eğitim Bilgileri
1986 - 1994
1986 - 1994Doktora
Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Fizik (Dr), Türkiye
1983 - 1985
1983 - 1985Yüksek Lisans
Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Fizik (Yl) (Tezli), Türkiye
1978 - 1982
1978 - 1982Lisans
Fırat Üniversitesi, Fen Fakültesi, Fizik Bölümü, Türkiye
Yaptığı Tezler
1993
1993Doktora
Al-siox-psi aygıtların ve güneş pillerinin elektriksel karakteristikleri
Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Fizik (Dr)
1950
1950Yüksek Lisans
Çok ince yapı teorisi
Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Fizik (Yl) (Tezli)
Araştırma Alanları
Avesis Araştırma Alanları:
Yarıiletken ve Süperiletken Malzemeler, Optik Özellikler, Kompozitler, Nanomalzemeler, Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler, Yoğun Madde 2:Elektronik Yapı, Elektrik, Manyetik ve Optik Özellikler
WoS Araştırma Alanları:
Fizik Yoğun Madde, Malzeme Bilimi Karakterizasyon Ve Test
Scopus Araştırma Alanları:
Elektronik, Optik ve Manyetik Malzemeler
Akademik Faaliyetlere Dayalı Araştırma Alanları
Avesis Araştırma Alanları
WoS Araştırma Alanları
Scopus Araştırma Alanları
Akademik Ünvanlar / Görevler
2011 - Devam Ediyor
2011 - Devam EdiyorProf. Dr.
Gazi Üniversitesi, Fen Fakültesi, Fizik
2005 - 2011
2005 - 2011Doç. Dr.
Gazi Üniversitesi, Fen Fakültesi, Fizik
1994 - 2005
1994 - 2005Yrd. Doç. Dr.
Gazi Üniversitesi, Fen Fakültesi, Fizik
1983 - 1994
1983 - 1994Araştırma Görevlisi
Gazi Üniversitesi, Fen Fakültesi, Fizik
Akademi Dışı Deneyim
2009 - Devam Ediyor
2009 - Devam EdiyorBölüm Başkan Yrd.
Gazi Üniversitesi, Bölüm Başkan Yrd.
2009 - 2012
2009 - 2012Uzmanlar Grubu (Fen Fak.)
Gazi Üniversitesi, Uzmanlar Grubu (Fen Fak.)
2009 - 2012
2009 - 2012Uzmanlar Grubu (Fen Bil. Enst.)
Gazi Üniversitesi, Uzmanlar Grubu (Fen Bil. Enst.)
Yönetilen Tezler
2021
2021Doktora
Photovoltaic and temperature Characteristics of the designed Schottky barrier diodes (SBDs) as a function of temperature and illumination
ALTINDAL Ş. (Danışman)
H.MELOUD(Öğrenci)
2021
2021Doktora
Au/(nanografit-PVP)/n-Si (MPS) yapıların hazırlanması ve elektrik ile dielektrik özelliklerinin geniş bir frekans ve voltaj aralığında incelenmesi
ALTINDAL Ş. (Danışman)
A.MUHAMMED(Öğrenci)
2021
2021Doktora
Dielektrik çok katmanlı geniş bantlı kızılötesi metamalzeme soğurucunun tasarımı, üretimi ve karakterizasyonu
Altındal Ş. (Danışman)
B.AKIN(Öğrenci)
2020
2020Doktora
Au/(Ag-ZnO/PVP)/n-Si (MPS) Schottky engel diyotların hazırlanması ve elektrik ile dielektrik özelliklerinin frekans ve voltaja bağlı incelenmesi
ALTINDAL Ş. (Danışman)
Ö.SEVGİLİ(Öğrenci)
2020
2020Doktora
Au/(Ag-ZnO/PVP)/n-Si (MPS) SCHOTTKY ENGEL DİYOTLARIN HAZIRLANMASI VE ELEKTRİK İLE DİELEKTRİK ÖZELLİKLERİNİN FREKANS VE VOLTAJA BAĞLI İNCELENMESİ
ALTINDAL Ş. (Danışman)
Ö.SEVGİLİ(Öğrenci)
2017
2017Yüksek Lisans
Grafen katkılı p-tipi ve n-tipi termoelektrik nanokompozit malzeme üretimi ve karakterizasyonu
ALTINDAL Ş. (Danışman)
S.KOÇYİĞİT(Öğrenci)
2017
2017Yüksek Lisans
Grafen katkılı p-tipi ve n-tipi termoelektrik nanokompozit malzeme üretimi ve karakterizasyonu
USLU İ. (Eş Danışman), ALTINDAL Ş. (Eş Danışman)
S.KOÇYİĞİT(Öğrenci)
2016
2016Doktora
Polimer arayüzey tabakalı ve tabakasız schottky engel diyotların elektriksel karakteristiklerinin karşılaştırılması
ALTINDAL Ş. (Danışman)
Ç.BİLKAN(Öğrenci)
2016
2016Doktora
Polimer arayüzey tabakalı ve tabakasız schottky engel diyotların elektriksel karakteristiklerinin karşılaştırılması
ALTINDAL Ş. (Danışman)
Ç.BİLKAN(Öğrenci)
2015
2015Doktora
Au/n-GaAs Schottky diyotların hazırlanması ve akım-iletim mekanizmalarının geniş bir sıcaklık aralığında incelenmesi
ALTINDAL Ş. (Danışman)
E.ÖZAVCI(Öğrenci)
2015
2015Doktora
Au/Ca3Co4Ga0,001Ox/n-Si yapılarda doğru ve ters beslem akım-voltaj (I-V) karakteristiklerinin 80-340 K sıcaklık aralığında incelenmesi
ALTINDAL Ş. (Danışman)
E.MARIL(Öğrenci)
2015
2015Yüksek Lisans
Zirkonyum oksit ve gadolinyum oksit tabanlı çeşitli metal oksit katkılı inorganik pigmentlerin çöz-pel tekniğiyle sentezi ve karakterizasyonu
ALTINDAL Ş. (Danışman)
A.AYTİMUR(Öğrenci)
2015
2015Yüksek Lisans
Zirkonyum oksit ve gadolinyum oksit tabanlı çeşitli metal oksit katkılı inorganik pigmentlerin çöz-pel tekniğiyle sentezi ve karakterizasyonu
USLU İ. (Eş Danışman), ALTINDAL Ş. (Eş Danışman)
A.AYTİMUR(Öğrenci)
2015
2015Yüksek Lisans
Au/ZnO/n-GaAs (MIS) Schottky engel di̇yotlarin (SBDs) elektri̇ksel karakteri̇sti̇kleri̇ni̇n frekans ve voltaja bağli i̇ncelenmesi̇
ALTINDAL Ş. (Danışman)
B.AKIN(Öğrenci)
2015
2015Doktora
Au/(%1 Grafen Katkılı)-Ca1.9pr0.1co4ox/N-Si Schottky Engel Diyotların Hazırlanması Ve Elektrik ile Dielektrik Özelliklerinin Sıcaklık Ve Frekansa Bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.Gökçen(Öğrenci)
2015
2015Yüksek Lisans
Au/ZnO/n-GaAs (MIS) Schottky engel di̇yotlarin (SBDs) elektri̇ksel karakteri̇sti̇kleri̇ni̇n frekans ve voltaja bağli i̇ncelenmesi̇
ALTINDAL Ş. (Danışman)
B.AKIN(Öğrenci)
2015
2015Yüksek Lisans
Grafen, bor ve nadir toprak elementleriyle katkılanmış poliviniliden florür nanokompozit piezo malzemelerin üretimi ve karakterizasyonu
USLU İ. (Eş Danışman), ALTINDAL Ş. (Eş Danışman)
Y.BADALİ(Öğrenci)
2015
2015Doktora
Au/n-GaAs Schottky diyotların hazırlanması ve akım-iletim mekanizmalarının geniş bir sıcaklık aralığında incelenmesi
ALTINDAL Ş. (Danışman)
E.ÖZAVCI(Öğrenci)
2015
2015Yüksek Lisans
Grafen, bor ve nadir toprak elementleriyle katkılanmış poliviniliden florür nanokompozit piezo malzemelerin üretimi ve karakterizasyonu
ALTINDAL Ş. (Danışman)
Y.BADALİ(Öğrenci)
2015
2015Doktora
Au/(%1 grafen (GP) katkılı)-Ca1.9Pr0.1Co4Ox/n-Si Schottky engel diyotların hazırlanması ve elektrik ile dielektrik özelliklerinin sıcaklık ve frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.GÖKÇEN(Öğrenci)
2015
2015Doktora
Au/Ca3Co4Ga0,001Ox/n-Si yapılarda doğru ve ters beslem akım-voltaj (I-V) karakteristiklerinin 80-340 K sıcaklık aralığında incelenmesi
ALTINDAL Ş. (Danışman)
E.MARIL(Öğrenci)
2015
2015Doktora
Au/(%1 grafen (GP) katkılı)-Ca1.9Pr0.1Co4Ox/n-Si Schottky engel diyotların hazırlanması ve elektrik ile dielektrik özelliklerinin sıcaklık ve frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.GÖKÇEN(Öğrenci)
2014
2014Doktora
Au/(Zn-Katkılı) polivinil alkol/n-GaAs yapıların hazırlanması ve akım-iletim mekanizmalarının geniş bir sıcaklık aralığında incelenmesi
ALTINDAL Ş. (Danışman)
H.TECİMER(Öğrenci)
2014
2014Doktora
Au/PVA:Zn/n-Si (MPS) yapıların hazırlanması ve temel elektriksel özelliklerinin ışık altında incelenmesi
ALTINDAL Ş. (Danışman)
U.AYDEMİR(Öğrenci)
2014
2014Doktora
Au/PVA:Zn/n-Si (MPS) yapıların hazırlanması ve temel elektriksel özelliklerinin ışık altında incelenmesi
ALTINDAL Ş. (Danışman)
U.AYDEMİR(Öğrenci)
2014
2014Doktora
Au/(Zn-Katkılı) polivinil alkol/n-GaAs yapıların hazırlanması ve akım-iletim mekanizmalarının geniş bir sıcaklık aralığında incelenmesi
ALTINDAL Ş. (Danışman)
H.TECİMER(Öğrenci)
2013
2013Yüksek Lisans
Au/n-4H-SiC (MS) schottky diyotların hazırlanması ve elektriksel karekteristiklerinin frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
Ö.SEVGİLİ(Öğrenci)
2013
2013Doktora
Metal-polimer-yarıiletken (MPS) yapıların elektrik ve dielektrik özelliklerinin geniş frekans aralığında incelenmesi
ALTINDAL Ş. (Danışman)
A.KAYA(Öğrenci)
2013
2013Yüksek Lisans
Perilensiz ve perilenli Al/p-Si schottky engel diyotların elektriksel özelliklerinin oda sıcaklığında karşılaştırılması
ALTINDAL Ş. (Danışman)
Ç.BİLKAN(Öğrenci)
2013
2013Yüksek Lisans
Au/n-4H-SiC (MS) schottky diyotların hazırlanması ve elektriksel karekteristiklerinin frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
Ö.SEVGİLİ(Öğrenci)
2013
2013Doktora
Metal-polimer-yarıiletken (MPS) yapıların elektrik ve dielektrik özelliklerinin geniş frekans aralığında incelenmesi
ALTINDAL Ş. (Danışman)
A.KAYA(Öğrenci)
2013
2013Yüksek Lisans
Perilensiz ve perilenli Al/p-Si schottky engel diyotların elektriksel özelliklerinin oda sıcaklığında karşılaştırılması
ALTINDAL Ş. (Danışman)
Ç.BİLKAN(Öğrenci)
2012
2012Doktora
(Ni/Au)/Al0. 22Ga0. 78N/AlN/GaN çoklu-yapıların elektriksel karakteristiklerinin admitans spektroskopi metoduyla incelenmesi
ALTINDAL Ş. (Danışman)
Y.ŞAFAK(Öğrenci)
2012
2012Doktora
Au/PVA:Zn/n-Si (MPS)schottky engel diyodun elektriksel özelliklerinin sıcaklık ve radyasyona bağlı incelenmesi
ALTINDAL Ş. (Danışman)
İ.TAŞÇIOĞLU(Öğrenci)
2012
2012Doktora
Metal-yalıtkan-yarıiletken (Al/SiO2/p-Si) yapıların elektrik ve dielektrik özelliklerinin frekans ve potansiyele bağlı incelenmesi
ALTINDAL Ş. (Danışman)
Z.SÖNMEZ(Öğrenci)
2012
2012Doktora
Metal-yalıtkan-yarıiletken (Al/SiO2/p-Si) yapıların elektrik ve dielektrik özelliklerinin frekans ve potansiyele bağlı incelenmesi
ALTINDAL Ş. (Danışman)
Z.SÖNMEZ(Öğrenci)
2012
2012Doktora
(Ni/Au)/Al0. 22Ga0. 78N/AlN/GaN çoklu-yapıların elektriksel karakteristiklerinin admitans spektroskopi metoduyla incelenmesi
ALTINDAL Ş. (Danışman)
Y.ŞAFAK(Öğrenci)
2012
2012Doktora
Au/PVA:Zn/n-Si (MPS)schottky engel diyodun elektriksel özelliklerinin sıcaklık ve radyasyona bağlı incelenmesi
ALTINDAL Ş. (Danışman)
İ.TAŞÇIOĞLU(Öğrenci)
2011
2011Yüksek Lisans
Au/SİO2/n-Sİ (MIS) yapının elektrik ve dielektrik karakteristiklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
A.GÜL(Öğrenci)
2011
2011Doktora
Al / Rhodamine - 101 / n-GaAs Schottky Engel diyotlarının hazırlanması ve iletim mekanizmalarının geniş bir sıcaklık aralığında incelenmesi
ALTINDAL Ş. (Danışman)
Ö.VURAL(Öğrenci)
2011
2011Yüksek Lisans
Au/SİO2/n-Sİ (MIS) yapının elektrik ve dielektrik karakteristiklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
A.GÜL(Öğrenci)
2011
2011Doktora
Al / Rhodamine - 101 / n-GaAs Schottky Engel diyotlarının hazırlanması ve iletim mekanizmalarının geniş bir sıcaklık aralığında incelenmesi
ALTINDAL Ş. (Danışman)
Ö.VURAL(Öğrenci)
2011
2011Yüksek Lisans
Au/(Bi-katkılı) polivinil alkol/n-si schottky engel diyotlarının elektriksel özelliklerinin sıcaklığa ve aydınlatma şiddetıne bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.GÖKÇEN(Öğrenci)
2011
2011Yüksek Lisans
Au/(Bi-katkılı) polivinil alkol/n-si schottky engel diyotlarının elektriksel özelliklerinin sıcaklığa ve aydınlatma şiddetıne bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.GÖKÇEN(Öğrenci)
2010
2010Yüksek Lisans
Al/SiO2/p-Si (MIS) yapıların elektrik karekteristiklerinin frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
A.KAYA(Öğrenci)
2010
2010Yüksek Lisans
Al/SiO2/p-Si (MIS) yapıların elektrik karekteristiklerinin frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
A.KAYA(Öğrenci)
2010
2010Doktora
Au/(Co, Zn-katkılı) polivinil alkol/n-Si schottky engel diyotlarının hazırlanması ve elektriksel özelliklerinin aydınlatma şiddetine bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.USLU(Öğrenci)
2010
2010Doktora
NiAu-AlGaN/GaN heteroyapıların elektriksel karakteristiklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
S.DEMİREZEN(Öğrenci)
2010
2010Doktora
NiAu-AlGaN/GaN heteroyapıların elektriksel karakteristiklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
S.DEMİREZEN(Öğrenci)
2010
2010Yüksek Lisans
SiO2/p-Si (MIS) YAPILARIN ELEKTRİK KARAKTERİSTİKLERİNİN FREKANSA BAĞLI İNCELENMESİ
ALTINDAL Ş. (Danışman)
A.KAYA(Öğrenci)
2010
2010Doktora
NiAu-AlGaN/GaN HETEROYAPILARIN ELEKTRİKSEL KARAKTERİSTİKLERİNİN SICAKLIĞA BAĞLI İNCELENMESİ
ALTINDAL Ş. (Danışman)
S.DEMİREZEN(Öğrenci)
2010
2010Doktora
Au/(Co, Zn-katkılı) polivinil alkol/n-Si schottky engel diyotlarının hazırlanması ve elektriksel özelliklerinin aydınlatma şiddetine bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.USLU(Öğrenci)
2009
2009Yüksek Lisans
Au/SrTiO3/n-Si (MFS) Schottky diyotların elektriksel parametrelerinin I-V, C-V ve DLTS metodu ile incelenmesi
ALTINDAL Ş. (Danışman)
U.AYDEMİR(Öğrenci)
2009
2009Yüksek Lisans
Au/SrTiO3/n-Si (MFS) Schottky diyotların elektriksel parametrelerinin I-V, C-V ve DLTS metodu ile incelenmesi
ALTINDAL Ş. (Danışman)
U.AYDEMİR(Öğrenci)
2008
2008Doktora
Yalıtkan tabakalı Al/p-Si Schottky diyotlarda elektriksel karakteristiklerin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.KANBUR(Öğrenci)
2008
2008Doktora
Au/SiO2/n-GaAs (MOY) YAPILARIN ELEKTRİK VE DİELEKTRİK KARAKTERİSTİKLERİNİN FREKANS VE SICAKLIĞA BAĞLI İNCELENMESİ
ALTINDAL Ş. (Danışman)
M.GÖKÇEN(Öğrenci)
2008
2008Doktora
Al/ SiO2/p-Si (MYY) YAPILARIN AKIM-İLETİM MEKANİZMASI VE ELEKTRİKSEL ÖZELLİKLERİNİN SICAKLIĞA BAĞLI İNCELENMESİ
ALTINDAL Ş. (Danışman)
D.Esra(Öğrenci)
2008
2008Doktora
Yalıtkan tabakalı Al/p-Si Schottky diyotlarda elektriksel karakteristiklerin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.KANBUR(Öğrenci)
2008
2008Doktora
Al/SiO2/p-Si (MYY) yapıların akım iletim mekanizması ve elektriksel özelliklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
D.ESRA(Öğrenci)
2008
2008Doktora
Au/SiO2/n-GaAs (MOY) yapıların elektrik ve dielektrik karakteristiklerinin frekans ve sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
M.GÖKÇEN(Öğrenci)
2008
2008Doktora
Au/SiO2/n-GaAs (MOY) yapıların elektrik ve dielektrik karakteristiklerinin frekans ve sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
M.GÖKÇEN(Öğrenci)
2008
2008Doktora
Al/SiO2/p-Si (MYY) yapıların akım iletim mekanizması ve elektriksel özelliklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
D.ESRA(Öğrenci)
2007
2007Doktora
Au/Bi4Ti3O12/SiO2/n-Si yapıların hazırlanması, elektriksel ve dielektrik özelliklerinin frekans ve sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
F.PARLAKTÜRK(Öğrenci)
2007
2007Doktora
Au/Bi4Ti3O12/SiO2/n-Si yapıların hazırlanması, elektriksel ve dielektrik özelliklerinin frekans ve sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
F.PARLAKTÜRK(Öğrenci)
2007
2007Yüksek Lisans
SCHOTTKY DİYOTLARIN ELEKTRİKSEL KARAKTERİSTİKLERİNİN SICAKLIĞA BAĞLI İNCELENMESİ
ALTINDAL Ş. (Danışman)
H.KUTLUCA(Öğrenci)
2007
2007Yüksek Lisans
Schottky diyotların elektriksel karakteristiklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.KUTLUCA(Öğrenci)
2007
2007Doktora
Au/Bi4Ti3O12/SiO2/n-Si (MFIS) YAPILARIN HAZIRLANMASI, ELEKTRİKSEL VE DİELEKTRİK ÖZELLİKLERİNİN FREKANS VESICAKLIĞA BAĞLI İNCELENMESİ
ALTINDAL Ş. (Danışman)
F.PARLAKTÜRK(Öğrenci)
2007
2007Yüksek Lisans
(Al-TiW+PtSi)/n-Si Schottky diyotların elektriksel özelliklerinin frekans ve aydınlanma şiddetine bağlı incelenmesi
ALTINDAL Ş. (Danışman)
M.HAMDİ(Öğrenci)
2007
2007Yüksek Lisans
(Al-TiW+PtSi)/n-Si Schottky diyotların elektriksel özelliklerinin frekans ve aydınlanma şiddetine bağlı incelenmesi
ALTINDAL Ş. (Danışman)
M.HAMDİ(Öğrenci)
2007
2007Yüksek Lisans
Schottky diyotların elektriksel karakteristiklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.KUTLUCA(Öğrenci)
2007
2007Doktora
Metal-yalıtkan-yarı iletken (MIS) yapılarda elektrik ve dielektrik özelliklerinin sıcaklık ve frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
İ.YÜCEDAĞ(Öğrenci)
2007
2007Doktora
Metal-yalıtkan-yarı iletken (MIS) yapılarda elektrik ve dielektrik özelliklerinin sıcaklık ve frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
İ.YÜCEDAĞ(Öğrenci)
2006
2006Yüksek Lisans
MIS yapıların frekans ve radyasyona bağlı temel elektriksel parametreleri
ALTINDAL Ş. (Danışman)
B.TATAROĞLU(Öğrenci)
2006
2006Yüksek Lisans
MIS yapıların frekans ve radyasyona bağlı temel elektriksel parametreleri
ALTINDAL Ş. (Danışman)
B.TATAROĞLU(Öğrenci)
2005
2005Yüksek Lisans
Doğal yalıtkan tabakalı Al/p-Si Schottky diyotlarda elektriksel karakteristiklerin frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.KANBUR(Öğrenci)
2005
2005Yüksek Lisans
Doğal yalıtkan tabakalı Al/p-Si schottky diyotlarda elektriksel karakteristiklerin frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.KAMBUR(Öğrenci)
2005
2005Yüksek Lisans
Doğal yalıtkan tabakalı Al/p-Si schottky diyotlarda elektriksel karakteristiklerin frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.KAMBUR(Öğrenci)
2005
2005Yüksek Lisans
(Al-TiW+PtSi)/n-Si Sckottky diyotlarının sıcaklığa bağlı temel parametreleri
ALTINDAL Ş. (Danışman)
E.MARIL(Öğrenci)
2005
2005Yüksek Lisans
(Al-TiW+PtSi)/n-Si Sckottky diyotlarının sıcaklığa bağlı temel parametreleri
ALTINDAL Ş. (Danışman)
E.MARIL(Öğrenci)
2005
2005Yüksek Lisans
Doğal yalıtkan tabakalı Al/p-Si Schottky diyotlarda elektriksel karakteristiklerin frekansa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
H.KANBUR(Öğrenci)
2004
2004Doktora
MOS yapılarda temel fiziksel parametrelerin frekans ve radyasyon miktarına bağlı incelenmesi
ALTINDAL Ş. (Danışman)
A.TATAROĞLU(Öğrenci)
2004
2004Doktora
MOS yapılarda temel fiziksel parametrelerin frekans ve radyasyon miktarına bağlı incelenmesi
ALTINDAL Ş. (Danışman)
A.TATAROĞLU(Öğrenci)
2003
2003Yüksek Lisans
MOS yapılarda kapasitans-voltaj (C-V) ve iletkenlik voltaj (G/W-V) karakteristiklerinin frekans ve radyasyona bağlı incelenmesi
ALTINDAL Ş. (Danışman)
M.GÖKÇEN(Öğrenci)
2003
2003Yüksek Lisans
MOS yapılarda kapasitans-voltaj (C-V) ve iletkenlik voltaj (G/W-V) karakteristiklerinin frekans ve radyasyona bağlı incelenmesi
ALTINDAL Ş. (Danışman)
M.GÖKÇEN(Öğrenci)
2002
2002Yüksek Lisans
Yalıtkan arayüzey tabakası ve seri dirence sahip Al/ SnO2/ p-Si schottky diyotların elektriksel karakteristiklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
Z.TEKELİ(Öğrenci)
2002
2002Doktora
Al/p-Si ve Au/n-Si schottky diyotlarda I-V ve C-V karakteristiklerinin geniş bir sıcaklık aralığında analizi
ALTINDAL Ş. (Danışman)
İ.DÖKME(Öğrenci)
2002
2002Yüksek Lisans
Yalıtkan arayüzey tabakası ve seri dirence sahip Al/ SnO2/ p-Si schottky diyotların elektriksel karakteristiklerinin sıcaklığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
Z.TEKELİ(Öğrenci)
2002
2002Doktora
Al/p-Si ve Au/n-Si schottky diyotlarda I-V ve C-V karakteristiklerinin geniş bir sıcaklık aralığında analizi
ALTINDAL Ş. (Danışman)
İ.DÖKME(Öğrenci)
1999
1999Yüksek Lisans
Güneş pillerinde arayüzey durumlarının c.v. karakteristiklerine etkisi
ALTINDAL Ş. (Danışman)
E.YILDIZ(Öğrenci)
1999
1999Yüksek Lisans
Güneş pillerinde arayüzey durumlarının c.v. karakteristiklerine etkisi
ALTINDAL Ş. (Danışman)
E.YILDIZ(Öğrenci)
1999
1999Yüksek Lisans
Metal-oksit-yarıiletken (MOS) kapasitörlerde dielektrik sabitinin frekans, sıcaklık ve kalınlığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
A.TATAROĞLU(Öğrenci)
1999
1999Yüksek Lisans
Metal-oksit-yarıiletken (MOS) kapasitörlerde dielektrik sabitinin frekans, sıcaklık ve kalınlığa bağlı incelenmesi
ALTINDAL Ş. (Danışman)
A.TATAROĞLU(Öğrenci)
1998
1998Yüksek Lisans
Arayüz oksit tabakası ve seri dirence sahip ruln-Si schottky diyod parametrelerinin doğru beslem I-V ve C-V karakteristiklerinden hesaplanması
ALTINDAL Ş. (Danışman)
Ö.VURAL(Öğrenci)
1998
1998Yüksek Lisans
Arayüz oksit tabakası ve seri dirence sahip ruln-Si schottky diyod parametrelerinin doğru beslem I-V ve C-V karakteristiklerinden hesaplanması
ALTINDAL Ş. (Danışman)
Ö.VURAL(Öğrenci)
1997
1997Yüksek Lisans
AI-SiO2-pSİ (MYY) güneş pillerinin sıcaklığa bağlı elektriksel karakteristikleri
ALTINDAL Ş. (Danışman)
C.TEMEL(Öğrenci)
1997
1997Yüksek Lisans
AI-SiO2-pSİ (MYY) güneş pillerinin sıcaklığa bağlı elektriksel karakteristikleri
ALTINDAL Ş. (Danışman)
C.TEMEL(Öğrenci)
Makaleler
Tümü (414)
SCI-E, SSCI, AHCI (397)
SCI-E, SSCI, AHCI, ESCI (400)
ESCI (3)
Scopus (403)
TRDizin (1)
Diğer Yayınlar (11)
2026
20261. On the 60Co (γ-ray) effects on current - voltage (I-V) and impedance - voltage (Z-V) characteristics of Al/(DLC)/pSi (MIS) type structures
Han T., ŞAHİN A., LİŞESİVDİN B., Karatay K., ALTINDAL Ş.
Radiation Physics and Chemistry
, cilt.246, 2026 (SCI-Expanded, Scopus)
2026
20262. The role of Cu-doping in DLC interlayers on the electrical parameters of MIS-type Schottky devices: A Capacitance-Conductance analysis
Karasu Y. E., Kaymaz A., EVCİN BAYDİLLİ E., Durmuş H., ALTINDAL Ş.
Applied Surface Science
, cilt.736, 2026 (SCI-Expanded, Scopus)
2026
20263. Enhancing optoelectronic performance of Schottky structures via iCVD-grown Poly(2-ethylhexyl acrylate) passivation layer
ULUSOY M., Yılmaz K., ALTINDAL Ş., Karaman M.
Materials Science in Semiconductor Processing
, cilt.209, 2026 (SCI-Expanded, Scopus)
2026
20264. Comprehensive dielectric analysis of Schottky devices with Cu-doped DLC interlayer: Temperature effects and polarization mechanisms
Baran A., Özel E., EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş.
Materials Science and Engineering: B
, cilt.327, 2026 (SCI-Expanded, Scopus)
2026
20265. A comparison of the effects of different light intensities on the current-voltage characteristics of the Si3N4 interface with various thicknesses grown on the (Au: Ti)/n-GaAs (MS) structure
BUCURGAT M., ÖZDEMİR A. F., ALTINDAL Ş.
Optical Materials
, cilt.171, 2026 (SCI-Expanded, Scopus)
2026
20266. Multilayer borophene patched PEDOT:PSS p-n junctions for medical x-ray detection
ULUSOY M., Calis-Ismetoglu G., SERBEST B., Sar O., Di Bartolomeo A., ALTINDAL Ş.
NANO EXPRESS
, cilt.7, sa.1, 2026 (ESCI, Scopus)
2026
20267. Comparative Electrical and Photoresponse Investigation of the Au/PVA/n-Si (MPS1) and Au/(CdTe:PVA)/n-Si (MPS2) Photodiodes, Both in the Dark and under Illumination
Güçlü Ç. Ş., Akman L. B., Bilkan Ç., ALTINDAL Ş.
ACS Omega
, cilt.11, sa.6, ss.10344-10354, 2026 (SCI-Expanded, Scopus)
2026
20268. The behaviour of ultra-high temperature sensitivity and multi-gaussian barrier shape for RGO/PVA-doped CF-based schottky device
Karasu Y. E., Kaymaz A., AZIZIAN-KALANDARAGH Y., ALTINDAL Ş.
Electrochimica Acta
, cilt.549, 2026 (SCI-Expanded, Scopus)
2026
20269. On the electrical parameters, conduction mechanisms depend on temperature and voltage, and thermal sensor applications in the Re/n‑GaAs/Au Schottky diodes
Balcı E., Durmuş H., Bilkan Ç., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.37, sa.2, 2026 (SCI-Expanded, Scopus)
2025
202510. Long short-term memory (LSTM) networks for precision prediction of Schottky barrier photodiode behavior at different ıllumination levels
Tulum G., Nematzadeh S., Taşçıoğlu İ., ALTINDAL Ş., Yakuphanoğlu F.
Scientific Reports
, cilt.15, sa.1, 2025 (SCI-Expanded, Scopus)
2025
202511. Comparative dielectric analysis of Schottky diodes from the perspective of the high-dielectric interlayers (pure, N, S, Cu doped DLC) and light exposure
Balıkçı L. M., ERBİLEN TANRIKULU E., Karatay K., ALTINDAL Ş.
Diamond and Related Materials
, cilt.160, 2025 (SCI-Expanded, Scopus)
2025
202512. Negative capacitance and negative dielectric behavior of MIS device with Rhenium-Type Schottky contacts
Güler M. İ., Kaymaz A., EVCİN BAYDİLLİ E., Durmuş H., ALTINDAL Ş.
Solid-State Electronics
, cilt.229, 2025 (SCI-Expanded, Scopus)
2025
202513. Dielectric properties and polarization mechanisms of the DLC-interlayered Schottky structures under low-moderate and high-temperatures
Bozkurt R. B., EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş., Durmuş H.
Materials Science and Engineering: B
, cilt.320, 2025 (SCI-Expanded, Scopus)
2025
202514. Assessment of wide frequency range admittance properties of Au/(ZnO:CeO2:PVP)/n-Si Schottky diodes
ÖZÇELİK U., Üstün O., AZIZIAN-KALANDARAGH Y., ALTINDAL Ş., ÖZÇELİK S.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.30, 2025 (SCI-Expanded, Scopus)
2025
202515. Analysis of the electrical parameters, frequency, and voltage dependence of surface states and series resistance in Au/n-Si Schottky diodes (SDs) with (Fe2O3) interlayer
Alptekin S., Baştuğ A., YILDIZ K., ALTINDAL Ş., SARITAŞ S.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.29, 2025 (SCI-Expanded, Scopus)
2025
202516. Exploring the dielectric and AC transport characteristics of Au/(Sn:Fe2O3)/n-Si diodes using impedance spectroscopy over extended frequency and voltage intervals
Baştuğ A., Taşçıoğlu I., Khalkhali A., ALTINDAL Ş., YILDIRIM M., SARITAŞ S.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.28, 2025 (SCI-Expanded, Scopus)
2025
202517. Determination of electrical parameters of 3 % graphene-doped polyvinylalcohol (PVA) interfacial layered Au/n-Si (MPS) structure irradiated with various doses of beta (β) by using impedance measurements
Abay Ö., UYAR E., ULUSOY M., ALTINDAL Ş., BİLGE OCAK S., GÖKMEN U.
Physica B: Condensed Matter
, cilt.714, 2025 (SCI-Expanded, Scopus)
2025
202518. Dielectric response of Au/(Co:PVA)/n-Si/Al structures under varying frequencies and bias voltages
Güçlü Ç., Khalkhali A., Hameed S. A., Taşçıoğlu İ., Demirci A., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.23, 2025 (SCI-Expanded, Scopus)
2025
202519. On the investigation of current transport mechanisms (CTMs) of the crystalline Si solar cells utilizing current/voltage (I–V) characteristics in temperature range of 110-380 K
Büyükbaş-Uluşan A., TURAN R., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.19, 2025 (SCI-Expanded, Scopus)
2025
202520. Optimizing Schottky barrier diodes: the role of PVC and PVC: molybdenum interlayers in electrophysical properties
AZIZIAN-KALANDARAGH Y., Yeşilyurt H., Yükseltürk E., ALTINDAL Ş., ÖZÇELİK S.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.17, 2025 (SCI-Expanded, Scopus)
2025
202521. Electrical properties, conduction mechanisms, and voltage dependent curves of interface traps, series resistance in Au/(Sn:Fe2O3)/n-Si structures using impedance measurements
Baştuğ A., Khalkhali A., SARITAŞ S., YILDIRIM M., Güçlü Ç., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.16, 2025 (SCI-Expanded, Scopus)
2025
202522. A detailed analysis of electrical parameters and energy dependence of interface Traps in Au-(Co:PVA)-nSi-Al structure via impedance measurements
Güçlü Ç., Hameed S., Khalkhali A., Taşçıoğlu İ., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.14, 2025 (SCI-Expanded, Scopus)
2025
202523. On comparison of Au/n-Si (MS) Schottky diodes with and without (Brushite + Monetite: PVC) an interlayer grown by spin coating technique
SEVGİLİ Ö., ŞAFAK ASAR Y., ALTINDAL Ş., ULUSOY M., AZIZIAN-KALANDARAGH Y.
Electrical Engineering
, cilt.107, sa.5, ss.6693-6704, 2025 (SCI-Expanded, Scopus)
2025
202524. On the possible current transport mechanisms, Energy-dependent distribution profile of interface states, and temperature sensitivity in Au/(PEG:Er–MnFe2O4)/n–Si structures
ÇETİNKAYA H. G., Badali Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.15, 2025 (SCI-Expanded, Scopus)
2025
202525. Al/(S:DLC)/p-Si/Au (MIS) structure-based temperature sensors for moderate and high temperatures at enough high frequencies (0.1, 0.5, and 1 MHz)
Balcı E., Vahid A. F., ALTINDAL Ş.
Diamond and Related Materials
, cilt.154, 2025 (SCI-Expanded, Scopus)
2025
202526. On an investigation of optoelectrical features in Au/(MWCNT:PVA-B(OH)3)/n-Si structure, using I–V data, in dark and illumination conditions
Ata D., ALTINDAL Ş., BALBAŞI M.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.9, 2025 (SCI-Expanded, Scopus)
2025
202527. Effect of TiO2-Surfactant Interface on the Electrical and Dielectric Properties of a Metal–Insulator–Semiconductor (MIS) Structure
AZIZIAN-KALANDARAGH Y., EFKERE H. İ., Barkhordari A., Marmiroli B., Sartori B., ÖZÇELİK S., et al.
Journal of Electronic Materials
, cilt.54, sa.3, ss.2388-2403, 2025 (SCI-Expanded, Scopus)
2025
202528. Detailed analysis of possible current-transport mechanisms (CTMs) in Au/(P3DMTFT)/n-GaAs Schottky diodes (SDs) in a wide range of temperature
Kansız Y., SEVGİLİ Ö., ÖZDEMİR A. F., ALDEMİR D. A., Abdolahpour Salari M., ALTINDAL Ş.
Physica B: Condensed Matter
, cilt.700, 2025 (SCI-Expanded, Scopus)
2025
202529. Effectuality of frequency dependent dielectric characterization of (N:DLC) film deposition between the metal-semiconductor interface
Urgun N., Tan S., Feizollahi Vahid A., Avar B., ALTINDAL Ş.
Physica B: Condensed Matter
, cilt.698, 2025 (SCI-Expanded, Scopus)
2025
202530. Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations
Alarabi A. A., Çiçek O., Makara H., Ünal F., Zurnacı M., ALTINDAL Ş.
Engineering Science and Technology, an International Journal
, cilt.62, 2025 (SCI-Expanded, Scopus)
2025
202531. Comparison of electrical properties of pure and copper-doped diamond-like carbon interfacial-layered Schottky devices under different temperature conditions
Şahin M., Kaymaz A., Feizollahi Vahid A., Özerden E., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.36, sa.5, 2025 (SCI-Expanded, Scopus)
2025
202532. Investigation of the electrical properties of electrochemically grown DLC films doped with specific elements (S, N, Cu) in Schottky structures as interlayers
Balıkçı L., Taşçıoğlu İ., ULUSOY M., Vahid A. F., ALTINDAL Ş.
Journal of Alloys and Compounds
, cilt.1010, 2025 (SCI-Expanded, Scopus)
2024
202433. On a detail examination of frequency and voltage dependence of dielectric, electric modulus, ac conductivity (σac) of the Al/DLC/p-Si structures between 2 kHz and 1 MHz
BALCI E., Vahid A. F., Avar B., ALTINDAL Ş.
Physica B: Condensed Matter
, cilt.695, 2024 (SCI-Expanded, Scopus)
2024
202434. The current–voltage (I–V) characteristics and low–high impedance measurements (C/G–V) of Au/(AgCdS:PVP)/n-Si Schottky diode (SD) at dark and under illumination conditions
Aslanbaş G., DURMUŞ P., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.
Journal of Materials Science: Materials in Electronics
, cilt.35, sa.36, 2024 (SCI-Expanded, Scopus)
2024
202435. Quaternary functional semiconductor device-based temperature sensors for low and high temperatures (LTs, HTs)
ALTINDAL Ş., Yildiz K., Dere A., Orman Y., Yakuphanoglu F.
PHYSICA SCRIPTA
, cilt.99, sa.12, 2024 (SCI-Expanded, Scopus)
2024
202436. A strategy to predict the current conduction mechanisms into Al/PVP:Gr-BaTiO3/p-Si Schottky structure using Artificial Neural Network
AZIZIAN-KALANDARAGH Y., ÖZÇELİK S., Barkhordari A., ALTINDAL Ş.
Micro and Nanostructures
, cilt.195, 2024 (Scopus)
2024
202437. A high sensitivity temperature coefficient of the Au/n-Si with (CdTe-PVA) structure based on capacitance/conductance-voltage (C/G-V) measurements in a wide range of temperature
Erbilen Tanrıkulu E., Güçlü Ç. Ş., Altındal Ş., Durmuş H.
MEASUREMENT
, cilt.238, 2024 (SCI-Expanded, Scopus)
2024
202438. Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices
EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş.
Radiation Physics and Chemistry
, cilt.222, 2024 (SCI-Expanded, Scopus)
2024
202439. Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities
Bengi S., ÇETİNKAYA H. G., ALTINDAL Ş., Zeyrek S.
Journal of Electronic Materials
, cilt.53, sa.9, ss.5606-5616, 2024 (SCI-Expanded, Scopus)
2024
202440. A comparative study of the Au/n-Si (MS) and Au/(ZnO:CeO2:PVP)/n-Si (MPS) Schottky structures by using current/voltage characteristics in dark and under illumination
Üstün O., ÖZÇELİK U., AZIZIAN-KALANDARAGH Y., ALTINDAL Ş., ÖZÇELİK S.
Physica Scripta
, cilt.99, sa.9, 2024 (SCI-Expanded, Scopus)
2024
202441. Machine learning-assisted prediction of the electronic features of a Schottky diode interlaid with PVP:BaTiO3 composite
AZIZIAN-KALANDARAGH Y., Barkhordari A., ÖZÇELİK S., ALTINDAL Ş.
Physica Scripta
, cilt.99, sa.8, 2024 (SCI-Expanded, Scopus)
2024
202442. A study on the complex dielectric (ε*)/electric-modulus (M*)/impedance (Z*), tangent-loss (tanδ), and ac conductivity (σac) of the Al/(S:DLC)/p-Si/Au (MIS)-type Schottky structures in a wide range of frequency and voltage at room temperature (RT)
Eroğlu Tezcan A., A.hameed S., Feizollahi Vahid A., ULUSOY M., ALTINDAL Ş.
Physica B: Condensed Matter
, cilt.684, 2024 (SCI-Expanded, Scopus)
2024
202443. Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer
Bengi S., ÇETİNKAYA H. G., ALTINDAL Ş., DURMUŞ P.
Ionics
, cilt.30, sa.6, ss.3651-3659, 2024 (SCI-Expanded, Scopus)
2024
202444. The study of the dependence of dielectric properties, electric modulus, and ac conductivity on the frequency and voltage in the Au/(CdTe:PVA)/n-Si (MPS) structures
Güçlü Ç., ALTINDAL Ş., ULUSOY M., Tezcan A. E.
Journal of Materials Science: Materials in Electronics
, cilt.35, sa.18, 2024 (SCI-Expanded, Scopus)
2024
202445. Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions
Alarabi A. A., Çiçek O., Makara H., Ünal F., Zurnacı M., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.35, sa.14, 2024 (SCI-Expanded, Scopus)
2024
202446. Determining the dielectric characteristics of the Au/C20H12/n-Si (MPS) structure over a wide temperature and voltage
Bengi S., ALTINDAL Ş., Zeyrek S.
Indian Journal of Physics
, cilt.98, sa.6, ss.2039-2046, 2024 (SCI-Expanded, Scopus)
2024
202447. The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures
ÇETİNKAYA H. G., Bengi S., DURMUŞ P., Demirezen S., ALTINDAL Ş.
Silicon
, cilt.16, sa.5, ss.2315-2322, 2024 (SCI-Expanded, Scopus)
2024
202448. A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements
Güçlü Ç. Ş., ULUSOY M., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.35, sa.12, 2024 (SCI-Expanded, Scopus)
2024
202449. Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe:PVA via the admittance method
Guclu C. S., ALTINDAL Ş., ERBİLEN TANRIKULU E.
PHYSICA B-CONDENSED MATTER
, cilt.677, 2024 (SCI-Expanded, Scopus)
2024
202450. Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer
ERBİLEN TANRIKULU E., Berkün Ö., ULUSOY M., Avar B., Durmuş H., ALTINDAL Ş.
MATERIALS TODAY COMMUNICATIONS
, cilt.38, 2024 (SCI-Expanded, Scopus)
2024
202451. The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures
ÇETİNKAYA H. G., Bengi S., SEVGİLİ Ö., ALTINDAL Ş.
Physica Scripta
, cilt.99, sa.2, 2024 (SCI-Expanded, Scopus)
2024
202452. Optoelectric response of Schottky photodiode with a PVP: ZnTiO3 nanocomposite as an interfacial layer
Barkhordari A., Mashayekhi H. R., Amiri P., ALTINDAL Ş., Azizian-Kalandaragh Y.
Optical Materials
, cilt.148, 2024 (SCI-Expanded, Scopus)
2024
202453. Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method
Güçlü Ç., Tanrıkulu E., ULUSOY M., Kalandargh Y. A., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.35, sa.5, 2024 (SCI-Expanded, Scopus)
2024
202454. Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy
Yürekli M., ÖZDEMİR A. F., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.35, sa.6, 2024 (SCI-Expanded, Scopus)
2024
202455. Thermal dependence on electrical characteristics of Au/(PVC:Sm2O3)/n-Si structure
BADALI Y., Altan H., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.35, sa.3, 2024 (SCI-Expanded, Scopus)
2024
202456. The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface
Elamen H., Badali Y., ULUSOY M., AZIZIAN-KALANDARAGH Y., ALTINDAL Ş., Güneşer M. T.
Polymer Bulletin
, cilt.81, sa.1, ss.403-422, 2024 (SCI-Expanded, Scopus)
2024
202457. High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S:DLC)/p-Si (MIS) structures
TATAROĞLU A., Durmuş H., Vahid A. F., Avar B., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.35, sa.3, 2024 (SCI-Expanded, Scopus)
2023
202358. Machine learning approach for predicting electrical features of Schottky structures with graphene and ZnTiO3 nanostructures doped in PVP interfacial layer
Barkhordari A., Mashayekhi H. R., Amiri P., ÖZÇELİK S., ALTINDAL Ş., Azizian-Kalandaragh Y.
Scientific Reports
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2023
202359. A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current-voltage (I-V) and impedance-voltage (Z-V) measurements
Güçlü Ç., Tanrıkulu E., Dere A., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.34, sa.28, 2023 (SCI-Expanded, Scopus)
2023
202360. Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs
Dinçer A. S., Haliloğlu M. T., Toprak A., ALTINDAL Ş., Özbay E.
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.23, 2023 (SCI-Expanded, Scopus)
2023
202361. Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)
Barkhordari A., Mashayekhi H. R., Amiri P., ALTINDAL Ş., Azizian-Kalandaragh Y.
Semiconductor Science and Technology
, cilt.38, sa.7, 2023 (SCI-Expanded, Scopus)
2023
202362. Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
Kaymaz A., Evcin Baydilli E., Tecimer H., Uslu Tecimer H., ALTINDAL Ş.
Materials Today Communications
, cilt.35, 2023 (SCI-Expanded, Scopus)
2023
202363. Frequency dependent electrical and dielectric properties of the Au/(RuO2:PVC)/n-Si (MPS) structures
Güneşer M. T., Elamen H., Badali Y., ALTINDAL Ş.
Physica B: Condensed Matter
, cilt.657, 2023 (SCI-Expanded, Scopus)
2023
202364. Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method
ŞAFAK ASAR Y., Feizollahi Vahid A., Basman N., ÇETİNKAYA H. G., ALTINDAL Ş.
Applied Physics A: Materials Science and Processing
, cilt.129, sa.5, 2023 (SCI-Expanded, Scopus)
2023
202365. The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures
Feizollahi Vahid A., Alptekin S., Basman N., ULUSOY M., ŞAFAK ASAR Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.13, 2023 (SCI-Expanded, Scopus)
2023
202366. The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures
Demirezen S., Arslan Alsaç A., ÇETİNKAYA H. G., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.14, 2023 (SCI-Expanded, Scopus)
2023
202367. Investigation of dielectric relaxation and ac conductivity in Au/(carbon nanosheet-PVP composite)/n-Si capacitors using impedance measurements
ŞAFAK ASAR Y., SEVGİLİ Ö., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.10, 2023 (SCI-Expanded, Scopus)
2023
202368. On the investigation of frequency-dependent dielectric features in Schottky barrier diodes (SBDs) with polymer interfacial layer doped by graphene and ZnTiO3 nanostructures
Barkhordari A., Mashayekhi H., Amiri P., ALTINDAL Ş., Azizian-Kalandaragh Y.
Applied Physics A: Materials Science and Processing
, cilt.129, sa.4, 2023 (SCI-Expanded, Scopus)
2023
202369. Negative Capacitance Behavior at Low Frequencies of Nitrogen-Doped Polyethylenimine-Functionalized Graphene Quantum Dots-Based Structure
Berktaş Z., Orhan E., Ulusoy M., Yıldız M., Altındal Ş.
ACS Applied Electronic Materials
, cilt.5, sa.3, ss.1804-1811, 2023 (SCI-Expanded, SSCI, Scopus)
2023
202370. The effect of (CeO2: PVC) thin interfacial film on the electrical features in Au/n-Si Schottky barrier diodes (SBDs) by using current–voltage measurements
Ganj T., Rozati S. M., Azizian-Kalandaragh Y., Pirgholi-Givi G., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.8, 2023 (SCI-Expanded, Scopus)
2023
202371. On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)
ÇETİNKAYA H. G., Feizollahi Vahid A., Basman N., Demirezen S., ŞAFAK ASAR Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.9, 2023 (SCI-Expanded, Scopus)
2023
202372. The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure
AZIZIAN-KALANDARAGH Y., Badali Y., Jamshidi-Ghozlu M., Hanife F., ÖZÇELİK S., ALTINDAL Ş., et al.
Physica B: Condensed Matter
, cilt.650, 2023 (SCI-Expanded, Scopus)
2023
202373. Improvement of electric and photoelectric properties of the Al/n-ZnO/p-Si/Al photodiodes by green synthesis method using chamomille flower extract
Kırkbınar M., İbrahimoğlu E., Demir A., Çalışkan F., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.3, 2023 (SCI-Expanded, Scopus)
2023
202374. The Influence of PVC and (PVC:SnS) Interfacial Polymer Layers on the Electric and Dielectric Properties of Au/n-Si Structure
Barkhordari A., Altındal Ş., Pirgholi-Givi G., Mashayekhi H., Özçelik S., Azızıan-Kalandaragh Y.
SILICON
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2022
2022
75.
21.2mV/K High-Performance Ni(50nm)-Au(100nm)/Ga2O3/p -Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode
Cicek O., Arslan E., ALTINDAL Ş., Badali Y., Ozbay E.
IEEE Sensors Journal
, cilt.22, sa.24, ss.23699-23704, 2022 (SCI-Expanded, Scopus)
2022
2022
76.
Vertical CdTe:PVP/p -Si - Based Temperature Sensor by Using Aluminum Anode Schottky Contact
ÇETİNKAYA H. G., Cicek O., ALTINDAL Ş., Badali Y., Demirezen S.
IEEE Sensors Journal
, cilt.22, sa.23, ss.22391-22397, 2022 (SCI-Expanded, Scopus)
2022
202277. The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
Durmuş H., Tataroğlu A., Altındal Ş., Yıldırım M.
Current Applied Physics
, cilt.44, ss.85-89, 2022 (SCI-Expanded, Scopus)
2022
202278. The effect of different rates of ultra-thin gossamer-like rGO coatings on photocatalytic performance in ZnO core-shell structures for optoelectronic applications
Kirkbinar M., DEMİR A., ALTINDAL Ş., Caliskan F.
DIAMOND AND RELATED MATERIALS
, cilt.130, 2022 (SCI-Expanded, Scopus)
2022
202279. Impact of p-type Semiconductor Substrate on the Transient Response of Metal-Semiconductor-Metal Photodetector
Barkhordari A., Mashayekhi H. R., ALTINDAL Ş., ÖZÇELİK S., AZIZIAN-KALANDARAGH Y.
Journal of Theoretical and Applied Physics , 2022 (Hakemli Dergi)
2022
202280. PEI N-doped graphene quantum dots/p-type silicon Schottky diode
Berktas Z., Yildiz M., Seven E., ORHAN E., ALTINDAL Ş.
FLATCHEM
, cilt.36, 2022 (SCI-Expanded, Scopus)
2022
202281. DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric
Yilmaz D., Odabasi O., Salkim G., Urfali E., Akoglu B. C., ÖZBAY E., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, cilt.37, sa.8, 2022 (SCI-Expanded, Scopus)
2022
202282. Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval
Tan S. O., ÇİÇEK O., Turk C. G., ALTINDAL Ş.
ENGINEERING SCIENCE AND TECHNOLOGY-AN INTERNATIONAL JOURNAL-JESTECH
, cilt.27, 2022 (SCI-Expanded, Scopus)
2022
202283. All-Dielectric Fabry–Pérot Cavity Design for Spectrally Selective Mid-Infrared Absorption
Akin B., Linford M. R., Ahmadivand A., ALTINDAL Ş.
Physica Status Solidi (B) Basic Research
, cilt.259, sa.3, 2022 (SCI-Expanded, Scopus)
2022
202284. The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayer
Alsmael J. A. M., Tan S. O., Tecimer H. U., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
, cilt.21, ss.528-533, 2022 (SCI-Expanded, Scopus)
2021
202185. On a numerical simulation of current-voltage features in wide range of temperature in metal/silicon Schottky diodes
Amiri P., ALTINDAL Ş.
Journal of Optoelectronics and Advanced Materials
, cilt.23, sa.11-12, ss.605-611, 2021 (SCI-Expanded, Scopus)
2021
202186. Comparison of dielectric characteristics for metal-semiconductor structures fabricated with different interlayers thicknesses
Arslan B., Tan S. O., Tecimer H., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.22, ss.26700-26708, 2021 (SCI-Expanded, Scopus)
2021
202187. Frequency Response of Metal-Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique
Tan S. O., Tascioglu I., ALTINDAL Ş.
IEEE TRANSACTIONS ON ELECTRON DEVICES
, cilt.68, sa.10, ss.5085-5089, 2021 (SCI-Expanded, Scopus)
2021
202188. Evidences on double Gaussian (DG) distribution of barrier heights in Au/(PVA-Fe3O4)/n-Si Schottky barrier diodes (SBDs) from the current-voltage (I-V) measurements in wide temperature
ARSLAN ALSAÇ A., SERIN T., ALTINDAL Ş., KALANDARAGH Y.
Journal of Optoelectronics and Advanced Materials
, cilt.23, sa.7-8, ss.339-347, 2021 (SCI-Expanded, Scopus)
2021
202189. Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode
Ulusan A. B., Tataroglu A., ALTINDAL Ş., Azizian-Kalandaragh Y.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.12, ss.15732-15739, 2021 (SCI-Expanded, Scopus)
2021
202190. Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures
Akbas A. M., TATAROĞLU A., ALTINDAL Ş., Azizian-Kalandaragh Y.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.6, ss.7657-7670, 2021 (SCI-Expanded, Scopus)
2021
202191. The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K
Guclu C. S., Ozdemir A. F., Aldemir D. A., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.5, ss.5624-5634, 2021 (SCI-Expanded, Scopus)
2021
202192. Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer
TATAROĞLU A., ALTINDAL Ş., Azizian-Kalandaragh Y.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.3, ss.3451-3459, 2021 (SCI-Expanded, Scopus)
2021
202193. Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures
Azizian-Kalandaragh Y., Yucedag I., Demir G. E., ALTINDAL Ş.
JOURNAL OF MOLECULAR STRUCTURE
, cilt.1224, 2021 (SCI-Expanded, Scopus)
2021
202194. Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures
Akbas A. M., ÇİÇEK O., ALTINDAL Ş., Azizian-Kalandaragh Y.
Journal of Materials Science: Materials in Electronics
, cilt.32, sa.1, ss.993-1006, 2021 (SCI-Expanded, Scopus)
2020
202095. On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80-360 K
Evcin Baydilli E., Kaymaz A., Uslu Tecimer H., Altindal Ş.
JOURNAL OF ELECTRONIC MATERIALS
, cilt.49, sa.12, ss.7427-7434, 2020 (SCI-Expanded, Scopus)
2020
202096. On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements
Sabahi Namini A., Shahedi Asl M., Pirgholi-Givi G., Delbari S. A., Farazin J., ALTINDAL Ş., et al.
Applied Physics A: Materials Science and Processing
, cilt.126, sa.12, 2020 (SCI-Expanded, Scopus)
2020
202097. Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes
Lapa H. E., KÖKCE A., ALDEMİR D. A., ÖZDEMİR A. F., ALTINDAL Ş.
INDIAN JOURNAL OF PHYSICS
, cilt.94, sa.12, ss.1901-1908, 2020 (SCI-Expanded, Scopus)
2020
202098. Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures
Baydilli E. E., Tan S. O., Tecimer H. U., Altindal Ş.
PHYSICA B-CONDENSED MATTER
, cilt.598, 2020 (SCI-Expanded, Scopus)
2020
202099. A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures
ÇİÇEK O., ALTINDAL Ş., Azizian-Kalandaragh Y.
IEEE Sensors Journal
, cilt.20, sa.23, ss.14081-14089, 2020 (SCI-Expanded, Scopus)
2020
2020100. The possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctions
Elamen H., Badali Y., GÜNEŞER M. T., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.21, ss.18640-18648, 2020 (SCI-Expanded, Scopus)
2020
2020101. The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer
Lapa H. E., KÖKCE A., ALDEMİR D. A., ÖZDEMİR A. F., ALTINDAL Ş.
PHYSICA SCRIPTA
, cilt.95, sa.11, 2020 (SCI-Expanded, Scopus)
2020
2020102. On the frequency and voltage-dependent main electrical parameters of the Au/ZnO/n-GaAs structures at room temperature by using various methods
Akin B., ALTINDAL Ş.
PHYSICA B-CONDENSED MATTER
, cilt.594, 2020 (SCI-Expanded, Scopus)
2020
2020103. Investigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature
Ersoz Demir G., Yucedag I., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.19, ss.16324-16331, 2020 (SCI-Expanded, Scopus)
2020
2020104. The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)
Evcin Baydilli E., Altindal Ş., Tecimer H., Kaymaz A., Uslu Tecimer H.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.20, ss.17147-17157, 2020 (SCI-Expanded, Scopus)
2020
2020105. A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer
Eroglu A., DEMİREZEN S., Azizian-Kalandaragh Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.31, sa.17, ss.14466-14477, 2020 (SCI-Expanded, Scopus)
2020
2020106. The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H-SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements
Al-Dharob M. H., KÖKCE A., ALDEMİR D. A., ÖZDEMİR A. F., ALTINDAL Ş.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
, cilt.144, 2020 (SCI-Expanded, Scopus)
2020
2020107. Electric and dielectric parameters in Au/n-Si (MS) capacitors with metal oxide-polymer interlayer as function of frequency and voltage
DEMİREZEN S., Eroglu A., Azizian-Kalandaragh Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.31, sa.18, ss.15589-15598, 2020 (SCI-Expanded, Scopus)
2020
2020108. Electrical and dielectric properties of Al/(PVP: Zn-TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements
Azizian-Kalandaragh Y., Farazin J., ALTINDAL Ş., Asl M. S., Pirgholi-Givi G., Delbari S. A., et al.
Applied Physics A: Materials Science and Processing
, cilt.126, sa.8, 2020 (SCI-Expanded, Scopus)
2020
2020109. A comparison study regarding Al/p-Si and Al/(carbon nanofiber–PVP)/p-Si diodes: current/impedance–voltage (I/Z–V) characteristics
SEVGİLİ Ö., YILDIRIM M., Azizian-Kalandaragh Y., ALTINDAL Ş.
Applied Physics A: Materials Science and Processing
, cilt.126, sa.8, 2020 (SCI-Expanded, Scopus)
2020
2020110. Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz
ALPTEKİN S., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.16, ss.13337-13343, 2020 (SCI-Expanded, Scopus)
2020
2020111. Intersection behavior of the current-voltage (I-V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity
Arslan E., Badali Y., ALTINDAL Ş., ÖZBAY E.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.16, ss.13167-13172, 2020 (SCI-Expanded, Scopus)
2020
2020112. Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes
Tataroglu A., Altindal Ş., Azizian-Kalandaragh Y.
Journal of Materials Science: Materials in Electronics
, cilt.31, sa.14, ss.11665-11672, 2020 (SCI-Expanded, Scopus)
2020
2020113. Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer
Tascioglu I., SEVGİLİ Ö., Azizian-Kalandaragh Y., ALTINDAL Ş.
Journal of Electronic Materials
, cilt.49, sa.6, ss.3720-3727, 2020 (SCI-Expanded, Scopus)
2020
2020114. Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO-PVA)/p-Si Schottky diodes using capacitance and conductance measurements
KAYMAZ A., Tecimer H. U., Baydilli E. E., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.11, ss.8349-8358, 2020 (SCI-Expanded, Scopus)
2020
2020115. Investigation of the effect of different Bi2O3–x:PVA (x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters
Badali Y., Azizian-Kalandaragh Y., USLU İ., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.31, sa.10, ss.8033-8042, 2020 (SCI-Expanded, Scopus)
2020
2020116. Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage
Turk C. G., TAN S. O., ALTINDAL Ş., İNEM B.
PHYSICA B-CONDENSED MATTER
, cilt.582, 2020 (SCI-Expanded, Scopus)
2020
2020117. The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)
ALTINDAL Ş., Farazin J., Pirgholi-Givi G., MARIL E., Azizian-Kalandaragh Y.
Physica B: Condensed Matter
, cilt.582, 2020 (SCI-Expanded, Scopus)
2020
2020118. C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure
Tataroglu A., Altindal Ş., Azizian-Kalandaragh Y.
Physica B: Condensed Matter
, cilt.582, 2020 (SCI-Expanded, Scopus)
2020
2020119. Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method
Lapa H. E., KÖKCE A., ÖZDEMİR A. F., ALTINDAL Ş.
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS
, cilt.234, sa.3, ss.505-516, 2020 (SCI-Expanded, Scopus)
2020
2020120. Identifying of series resistance and interface states on rhenium/n-GaAs structures using C-V-T and G/-V-T characteristics in frequency ranged 50 kHz to 5 MHz
ÇİÇEK O., DURMUŞ H., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.1, ss.704-713, 2020 (SCI-Expanded, Scopus)
2020
2020121. Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer
TATAROĞLU A., ALTINDAL Ş., Azizian-Kalandaragh Y.
Physica B: Condensed Matter
, cilt.576, 2020 (SCI-Expanded, Scopus)
2020
2020122. Ultrasound-Assisted Method for Preparation of Ag2S Nanostructures: Fabrication of Au/Ag2S-PVA/n-Si Schottky Barrier Diode and Exploring Their Electrical Properties
Badali Y., Azizian-Kalandaragh Y., Akhlaghi E. A., Altindal Ş.
Journal of Electronic Materials
, cilt.49, sa.1, ss.444-453, 2020 (SCI-Expanded, Scopus)
2019
2019123. Investigation of the efficiencies of the (SnO2-PVA) interlayer in Au/n-Si (MS) SDs on electrical characteristics at room temperature by comparison
BİLKAN Ç., Azizian-Kalandaragh Y., SEVGİLİ Ö., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.30, sa.23, ss.20479-20488, 2019 (SCI-Expanded, Scopus)
2019
2019124. Determination of current transport and trap states density in AlInGaN/GaN heterostructures
Arslan E., Ural S., ALTINDAL Ş., ÖZBAY E.
MICROELECTRONICS RELIABILITY
, cilt.103, 2019 (SCI-Expanded, Scopus)
2019
2019125. The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures
YÜKSELTÜRK E., ÇOTUK M., ZEYREK S., ALTINDAL Ş., BÜLBÜL M. M.
Materials Today: Proceedings , cilt.18, ss.1842-1851, 2019 (Hakemli Dergi)
2019
2019126. On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures
YÜKSELTÜRK E., ZEYREK S., ALTINDAL Ş., BÜLBÜL M. M.
Materials Today: Proceedings , cilt.18, ss.1852-1860, 2019 (Hakemli Dergi)
2019
2019127. Dielectric properties of Ag/Ru-0.03-PVA/n-Si structures
Badali Y., Kocyigit S., USLU İ., ALTINDAL Ş.
BULLETIN OF MATERIALS SCIENCE
, cilt.42, sa.5, 2019 (SCI-Expanded, Scopus)
2019
2019128. Synthesis of boron and rare earth stabilized graphene doped polyvinylidene fluoride (PVDF) nanocomposite piezoelectric materials
Badali Y., Kocyigit S., Aytimur A., ALTINDAL Ş., USLU İ.
POLYMER COMPOSITES
, cilt.40, sa.9, ss.3623-3633, 2019 (SCI-Expanded, Scopus)
2019
2019129. Examination of dielectric response of Au/HgS-PVA/n-Si (MPS)structure by impedance spectroscopy method
SEVGİLİ Ö., Tascioglu I., Boughdachi S., Azizian-Kalandaragh Y., ALTINDAL Ş.
Physica B: Condensed Matter
, cilt.566, ss.125-135, 2019 (SCI-Expanded, Scopus)
2019
2019130. Dielectric characterization of BSA doped-PANI interlayered metal-semiconductor structures
KARAOĞLAN N., Tecimer H. U., ALTINDAL Ş., BİNDAL C.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.15, ss.14224-14232, 2019 (SCI-Expanded, Scopus)
2019
2019131. A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures
Buyukbas-Ulusan A., Tascioglu I., Tataroglu A., Yakuphanoglu F., Altindal Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.13, ss.12122-12129, 2019 (SCI-Expanded, Scopus)
2019
2019132. The Structural and Electrical Properties of the Au/n-Si (MS) Diodes with Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method
Altindal Ş., Sevgili O., Azizian-Kalandaragh Y.
IEEE Transactions on Electron Devices
, cilt.66, sa.7, ss.3103-3109, 2019 (SCI-Expanded, Scopus)
2019
2019133. Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure
Tascioglu I., Tan S. O., Altindal Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.12, ss.11536-11541, 2019 (SCI-Expanded, Scopus)
2019
2019134. The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors
Demirezen S., Tanrikulu E., Altindal Ş.
INDIAN JOURNAL OF PHYSICS
, cilt.93, sa.6, ss.739-747, 2019 (SCI-Expanded, Scopus)
2019
2019135. Fabrication, structural and electrical characterization of Au/ (CuSe-polyvinyl alcohol)/n-Si (MPS) Schottky barrier structures
Mirzanezhad-Asl R., Phirouznia A., Altindal Ş., Badali Y., Azizian-Kalandaragh Y.
Physica B: Condensed Matter
, cilt.561, ss.1-8, 2019 (SCI-Expanded, Scopus)
2019
2019136. On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K
DURMUŞ H., YILDIRIM M., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.9, ss.9029-9037, 2019 (SCI-Expanded, Scopus)
2019
2019137. The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics
ÇETİNKAYA H. G., SEVGİLİ Ö., ALTINDAL Ş.
PHYSICA B-CONDENSED MATTER
, cilt.560, ss.91-96, 2019 (SCI-Expanded, Scopus)
2019
2019138. A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer
ALPTEKİN S., ALTINDAL Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.7, ss.6491-6499, 2019 (SCI-Expanded, Scopus)
2019
2019139. Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer
Arslan E., ALTINDAL Ş., Ural S., Kayal O. A., Ozturk M., ÖZBAY E.
JOURNAL OF ELECTRONIC MATERIALS
, cilt.48, sa.2, ss.887-897, 2019 (SCI-Expanded, Scopus)
2019
2019140. Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)
Guclu C. S., Ozdemir A. F., Karabulut A., Kokce A., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.89, ss.26-31, 2019 (SCI-Expanded, Scopus)
2019
2019141. Determination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structure
ALPTEKİN S., TAN S. O., ALTINDAL Ş.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
, cilt.18, ss.1196-1199, 2019 (SCI-Expanded, Scopus)
2019
2019142. A comparison of electrical parameters of Au/n-Si and Au/(CoSO 4 –PVP)/n-Si structures (SBDs) to determine the effect of (CoSO 4 –PVP) organic interlayer at room temperature
ALTINDAL Ş., Sevgili O., Azizian-Kalandaragh Y.
Journal of Materials Science: Materials in Electronics
, 2019 (SCI-Expanded, Scopus)
2018
2018143. Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K
Boughdachi S., Badali Y., Azizian-Kalandaragh Y., Altindal Ş.
Journal of Electronic Materials
, cilt.47, sa.12, ss.6945-6953, 2018 (SCI-Expanded, Scopus)
2018
2018144. Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy
Arslan E., ALTINDAL Ş., Ural S., Kayal O. A., Ozturk M., ÖZBAY E.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
, cilt.36, sa.6, 2018 (SCI-Expanded, Scopus)
2018
2018145. Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures
Demir G. E., Yucedag I., Azizian-Kalandaragh Y., ALTINDAL Ş.
Journal of Electronic Materials
, cilt.47, sa.11, ss.6600-6606, 2018 (SCI-Expanded, Scopus)
2018
2018146. Formation of ZnO nanopowders by the simple ultrasound-assisted method: Exploring the dielectric and electric properties of the Au/(ZnO-PVA)/n-Si structure
Nezhadesm-Kohardafchahi S., Farjami-Shayesteh S., Badali Y., Altindal Ş., Jamshidi-Ghozlu M. A., Azizian-Kalandaragh Y.
Materials Science in Semiconductor Processing
, cilt.86, ss.173-180, 2018 (SCI-Expanded, Scopus)
2018
2018147. The investigation of current-conduction mechanisms (CCMs) in Au/(0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements
Al-Dharob M. H., Lapa H. E., Kokce A., Ozdemir A. F., ALDEMİR D. A., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.85, ss.98-105, 2018 (SCI-Expanded, Scopus)
2018
2018148. Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer
Tascioglu I., TAN S. O., YAKUPHANOĞLU F., ALTINDAL Ş.
JOURNAL OF ELECTRONIC MATERIALS
, cilt.47, sa.10, ss.6059-6066, 2018 (SCI-Expanded, Scopus)
2018
2018149. Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures
Akhlaghi E. A., Badali Y., ALTINDAL Ş., Azizian-Kalandaragh Y.
Physica B: Condensed Matter
, cilt.546, ss.93-98, 2018 (SCI-Expanded, Scopus)
2018
2018150. Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes
Tecimer H. U., Alper M. A., Tecimer H., Tan S. O., Altindal Ş.
POLYMER BULLETIN
, cilt.75, sa.9, ss.4257-4271, 2018 (SCI-Expanded, Scopus)
2018
2018151. Evaluation of Electric and Dielectric Properties of Metal-Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer
MARIL E., TAN S. O., ALTINDAL Ş., USLU İ.
IEEE TRANSACTIONS ON ELECTRON DEVICES
, cilt.65, sa.9, ss.3901-3908, 2018 (SCI-Expanded, Scopus)
2018
2018152. Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage
BARAZ N., Yucedag I., Azizian-Kalandaragh Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.29, sa.15, ss.12735-12743, 2018 (SCI-Expanded, Scopus)
2018
2018153. Preparation of (CuS–PVA) interlayer and the investigation their structural, morphological and optical properties and frequency dependent electrical characteristics of Au/(CuS–PVA)/n-Si (MPS) structures
ERBİLEN TANRIKULU E., ALTINDAL Ş., Azizian-Kalandaragh Y.
Journal of Materials Science: Materials in Electronics
, cilt.29, sa.14, ss.11801-11811, 2018 (SCI-Expanded, Scopus)
2018
2018154. Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures
Badali Y., Nikravan A., ALTINDAL Ş., USLU İ.
JOURNAL OF ELECTRONIC MATERIALS
, cilt.47, sa.7, ss.3510-3520, 2018 (SCI-Expanded, Scopus)
2018
2018155. Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures
Badali Y., ALTINDAL Ş., USLU İ.
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL
, cilt.28, sa.3, ss.325-331, 2018 (SCI-Expanded, Scopus)
2018
2018156. A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods
Lapa H. E., KÖKCE A., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.
BULLETIN OF MATERIALS SCIENCE
, cilt.41, sa.3, 2018 (SCI-Expanded, Scopus)
2018
2018157. Self-assembled patches in PtSi/n-Si (111) diodes
Afandiyeva I. M., Altindal Ş., Abdullayeva L. K., Bayramova A. I.
JOURNAL OF SEMICONDUCTORS
, cilt.39, sa.5, 2018 (ESCI, Scopus)
2018
2018158. Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires
Kaya A., Polat K. G., Mayet A. S., Mao H., ALTINDAL Ş., Islam M. S.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.75, ss.124-129, 2018 (SCI-Expanded, Scopus)
2018
2018159. On the anomalous peak and negative capacitance in the capacitance-voltage (C-V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure
Tanrikulu E., Demirezen S., Altindal Ş., Uslu I.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.29, sa.4, ss.2890-2898, 2018 (SCI-Expanded, Scopus)
2018
2018160. Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes
Badrinezhad L., BİLKAN Ç., Azizian-Kalandaragh Y., Nematollahzadeh A., Orak I., ALTINDAL Ş.
International Journal of Modern Physics B
, cilt.32, sa.1, 2018 (SCI-Expanded, Scopus)
2018
2018161. On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics
Ulusan A. B., TATAROĞLU A., Azizian-Kalandaragh Y., Altindal Ş.
Journal of Materials Science: Materials in Electronics
, cilt.29, sa.1, ss.159-170, 2018 (SCI-Expanded, Scopus)
2018
2018162. The Effect of Modified PVA Interfacial Layer Doped by Zn Nanoparticles on the Electrical Parameters of Au/N-4H Sic (MS) Structures
AlDharob M. H., KÖKCE A., Lapa H. E., ÖZDEMİR A. F., ALTINDAL Ş.
Polymer Sciences , cilt.4, sa.1, 2018 (Hakemli Dergi)
2017
2017163. Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures
Cetinkaya H. G., Yildirim M., Durmus P., Altindal Ş.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.728, ss.896-901, 2017 (SCI-Expanded, Scopus)
2017
2017164. Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity
Cetinkaya H. G., Yildirim M., Durmus P., Altindal Ş.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.721, ss.750-756, 2017 (SCI-Expanded, Scopus)
2017
2017165. On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage
Nikravan A., Badali Y., ALTINDAL Ş., Uslu İ., Orak I.
JOURNAL OF ELECTRONIC MATERIALS
, cilt.46, sa.10, ss.5728-5736, 2017 (SCI-Expanded, Scopus)
2017
2017166. Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer
DURMUŞ P., ALTINDAL Ş.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, cilt.31, sa.27, 2017 (SCI-Expanded, Scopus)
2017
2017167. Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room
Lapa H. E., KÖKCE A., Al-Dharob M., Orak I., ÖZDEMİR A. F., ALTINDAL Ş.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
, cilt.80, sa.1, 2017 (SCI-Expanded, Scopus)
2017
2017168. The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature
Demirezen S., Kaya A., Altindal Ş., Uslu I.
POLYMER BULLETIN
, cilt.74, sa.9, ss.3765-3781, 2017 (SCI-Expanded, Scopus)
2017
2017169. Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature
Demirezen S., Orak I., Azizian-Kalandaragh Y., Altindal Ş.
Journal of Materials Science: Materials in Electronics
, cilt.28, sa.17, ss.12967-12976, 2017 (SCI-Expanded, Scopus)
2017
2017170. On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes
Bilkan C., Badali Y., Fotouhi-Shablou S., Azizian-Kalandaragh Y., Altindal Ş.
Applied Physics A: Materials Science and Processing
, cilt.123, sa.8, 2017 (SCI-Expanded, Scopus)
2017
2017171. Controlling the electrical characteristics of Au/n-Si structure with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature
BARAZ N., Yucedag I., DEMİR A., Ersoez G., ALTINDAL Ş., KANDAZ M.
POLYMERS FOR ADVANCED TECHNOLOGIES
, cilt.28, sa.8, ss.952-957, 2017 (SCI-Expanded, Scopus)
2017
2017172. Investigation of frequency and voltage dependence surface states and series resistance profiles using admittance measurements in Al/p-Si with Co3O4-PVA interlayer structures
BİLKAN Ç., ALTINDAL Ş., Azizian-Kalandaragh Y.
Physica B: Condensed Matter
, cilt.515, ss.28-33, 2017 (SCI-Expanded, Scopus)
2017
2017173. Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer
Cetinkaya H. G., Altindal Ş., Orak I., Uslu I.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.28, sa.11, ss.7905-7911, 2017 (SCI-Expanded, Scopus)
2017
2017174. Investigation of the C-V characteristics that provides linearity in a large reverse bias region and the effects of series resistance, surface states and interlayer in Au/n-Si/Ag diodes
BİLKAN Ç., ALTINDAL Ş.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.708, ss.464-469, 2017 (SCI-Expanded, Scopus)
2017
2017175. Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes
Ersoz G., Yucedag I., Bayrakdar S., ALTINDAL Ş., Gumus A.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.28, sa.9, ss.6413-6420, 2017 (SCI-Expanded, Scopus)
2017
2017176. Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode
Tascioglu I., ÖZMEN Ö. T., Sagban H. M., Yaglioglu E., Altindal Ş.
JOURNAL OF ELECTRONIC MATERIALS
, cilt.46, sa.4, ss.2379-2386, 2017 (SCI-Expanded, Scopus)
2017
2017177. Frequency dependent C-V and G/omega-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes
Tan S. O., Tecimer H. U., Cicek O., Tecimer H., Altindal Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.28, sa.6, ss.4951-4957, 2017 (SCI-Expanded, Scopus)
2017
2017178. Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature
Yildirim M., Sahin C., Altindal Ş., Durmus P.
JOURNAL OF ELECTRONIC MATERIALS
, cilt.46, sa.3, ss.1895-1901, 2017 (SCI-Expanded, Scopus)
2017
2017179. Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures
Cicek O., Tecimer H. U., Tan S. O., Tecimer H., Orak I., Altindal Ş.
COMPOSITES PART B-ENGINEERING
, cilt.113, ss.14-23, 2017 (SCI-Expanded, Scopus)
2017
2017180. Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range
Moraki K., Bengi S., Zeyrek S., Bulbul M. M., Altindal Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.28, sa.5, ss.3987-3996, 2017 (SCI-Expanded, Scopus)
2017
2017181. Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures
BARAZ N., Yucedag I., Azizian-Kalandaragh Y., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics
, cilt.28, sa.2, ss.1315-1321, 2017 (SCI-Expanded, Scopus)
2016
2016182. Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)type Schottky barrier diodes in wide temperature range
Guclu C. S., ÖZDEMİR A. F., ALTINDAL Ş.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
, cilt.122, sa.12, 2016 (SCI-Expanded, Scopus)
2016
2016183. Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co3O4-PVA/p-Si structures
BİLKAN Ç., Azizian-Kalandaragh Y., ALTINDAL Ş., Shokrani-Havigh R.
Physica B: Condensed Matter
, cilt.500, ss.154-160, 2016 (SCI-Expanded, Scopus)
2016
2016184. Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO2/n-4H-SiC Structure
Alialy S., Yildiz D. E., Altindal Ş.
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
, cilt.11, sa.5, ss.626-630, 2016 (SCI-Expanded, Scopus)
2016
2016185. A Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si/ and Au/Biphenylsubs-CoPc/n-Si/ Type Schottky Barrier Diodes
DEMİR A., Yucedag I., Ersoz G., ALTINDAL Ş., BARAZ N., KANDAZ M.
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
, cilt.11, sa.5, ss.620-625, 2016 (SCI-Expanded, Scopus)
2016
2016186. Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities
Tan S. O., Tecimer H. U., Cicek O., Tecimer H., Orak I., Altindal Ş.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.27, sa.8, ss.8340-8347, 2016 (SCI-Expanded, Scopus)
2016
2016187. Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions
Cicek O., Tecimer H. U., Tan S. O., Tecimer H., Altindal Ş., Uslu I.
COMPOSITES PART B-ENGINEERING
, cilt.98, ss.260-268, 2016 (SCI-Expanded, Scopus)
2016
2016188. Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method
Ersoz G., Yucedag I., Azizian-Kalandaragh Y., Orak I., ALTINDAL Ş.
IEEE Transactions on Electron Devices
, cilt.63, sa.7, ss.2948-2955, 2016 (SCI-Expanded, Scopus)
2016
2016189. Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3 Interfacial Layer at Room Temperature
Guclu C. S., Ozdemir A. F., Kokce A., Altindal Ş.
ACTA PHYSICA POLONICA A
, cilt.130, sa.1, ss.325-330, 2016 (SCI-Expanded, Scopus)
2016
2016190. A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer
Kaya A., Cetinkaya H. G., Altindal Ş., Uslu I.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, cilt.30, sa.16, 2016 (SCI-Expanded, Scopus)
2016
2016191. The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature
Kaya A., Maril E., Altindal Ş., Uslu I.
MICROELECTRONIC ENGINEERING
, cilt.149, ss.166-171, 2016 (SCI-Expanded, Scopus)
2015
2015192. On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure
Maril E., Kaya A., Cetinkaya H. G., Kocyigit S., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.39, ss.332-338, 2015 (SCI-Expanded, Scopus)
2015
2015193. Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage
Cetinkaya H. G., Kaya A., Altindal Ş., Kocyigit S.
CANADIAN JOURNAL OF PHYSICS
, cilt.93, sa.10, ss.1213-1220, 2015 (SCI-Expanded, Scopus)
2015
2015194. Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
Tanrikulu E., Yildiz D. E., Gunen A., Altindal Ş.
PHYSICA SCRIPTA
, cilt.90, sa.9, 2015 (SCI-Expanded, Scopus)
2015
2015195. Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes
Gumus A., Ersoz G., Yucedag I., Bayrakdar S., ALTINDAL Ş.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
, cilt.67, sa.5, ss.889-895, 2015 (SCI-Expanded, Scopus)
2015
2015196. Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis
Cetinkaya H. G., Alialy S., Altindal Ş., Kaya A., Uslu I.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.26, sa.5, ss.3186-3195, 2015 (SCI-Expanded, Scopus)
2015
2015197. The effect of Mo-doped PVC plus TCNQ interfacial layer on the electrical properties of Au/PVC plus TCNQ/p-Si structures at room temperature
Demirezen S., Kaya A., Vural O., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.33, ss.140-148, 2015 (SCI-Expanded, Scopus)
2015
2015198. Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage
Yucedag I., Ersoz G., Gumus A., ALTINDAL Ş.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, cilt.29, sa.13, 2015 (SCI-Expanded, Scopus)
2015
2015199. Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range
Alialy S., Kaya A., Maril E., Altindal Ş., Uslu I.
PHILOSOPHICAL MAGAZINE
, cilt.95, sa.13, ss.1448-1461, 2015 (SCI-Expanded, Scopus)
2015
2015200. Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes
ŞAFAK ASAR Y., ASAR T., ALTINDAL Ş., ÖZÇELİK S.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.628, ss.442-449, 2015 (SCI-Expanded, Scopus)
2015
2015201. On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature
Yucedag I., Kaya A., Altindal Ş.
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
, cilt.10, sa.2, ss.173-178, 2015 (SCI-Expanded, Scopus)
2015
2015202. A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current-voltage (I-V) and capacitance-voltage (C-V) measurements
Bilkan C., Zeyrek S., San S. E., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.32, ss.137-144, 2015 (SCI-Expanded, Scopus)
2015
2015203. On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80-340 K
Maril E., Kaya A., Kocyigit S., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.31, ss.256-261, 2015 (SCI-Expanded, Scopus)
2015
2015204. On the negative capacitance behavior in the forward bias of Au/n-4H-SiC (MS) and comparison between MS and Au/TiO2/n-4H-SiC (MIS) type diodes both in dark and under 200 W illumination intensity
Cetinkaya H. G., Yildiz D. E., Altindal Ş.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, cilt.29, sa.1, 2015 (SCI-Expanded, Scopus)
2015
2015205. Current-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes
Kaya A., Sevgili O., Altindal Ş., Ozturk M.
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
, cilt.53, sa.1, ss.56-65, 2015 (SCI-Expanded, Scopus)
2015
2015206. Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures
ŞAFAK ASAR Y., ASAR T., ALTINDAL Ş., ÖZÇELİK S.
PHILOSOPHICAL MAGAZINE
, cilt.95, sa.26, ss.2885-2898, 2015 (SCI-Expanded, Scopus)
2014
2014207. Electrical and dielectric properties and intersection behavior of G/omega-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature
Yucedag I., Kaya A., ALTINDAL Ş., USLU İ.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
, cilt.65, sa.12, ss.2082-2089, 2014 (SCI-Expanded, Scopus)
2014
2014208. Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K
Gumus A., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.28, ss.66-71, 2014 (SCI-Expanded, Scopus)
2014
2014209. Electrical Characteristics of Au/PVA (x-doped)/n-Si: Comparison Study on the Effect of Dopant Type in PVA
Dökme İ., Altındal Ş.
FIBERS AND POLYMERS
, cilt.15, ss.2253-2259, 2014 (SCI-Expanded, Scopus)
2014
2014210. On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC plus TCNQ)/p-Si structures
Yucedag I., Kaya A., Altindal Ş.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, cilt.28, sa.23, 2014 (SCI-Expanded, Scopus)
2014
2014211. Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C f and G f Measurements
Parlaktürk F., Agasiev A., TATAROĞLU A., ALTINDAL Ş.
Gazi University Journal of Science , cilt.27, ss.909-915, 2014 (Scopus)
2014
2014212. Investigation of Current-Voltage Characteristics and Current Conduction Mechanisms in Composites of Polyvinyl Alcohol and Bismuth Oxide
YILDIRIM M., GÖKÇEN M., TUNÇ T., USLU İ., ALTINDAL Ş.
POLYMER ENGINEERING AND SCIENCE
, cilt.54, sa.8, ss.1811-1816, 2014 (SCI-Expanded, Scopus)
2014
2014213. Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
Alialy S., Altindal Ş., Tanrikulu E., Yildiz D. E.
JOURNAL OF APPLIED PHYSICS
, cilt.116, sa.8, 2014 (SCI-Expanded, Scopus)
2014
2014214. The effect of frequency and temperature on capacitance/conductance-voltage (C/G-V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs)
Demirezen S., Ozavci E., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.23, ss.1-6, 2014 (SCI-Expanded, Scopus)
2014
2014215. Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method
Kaya A., Sevgili O., Altindal Ş.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, cilt.28, sa.17, 2014 (SCI-Expanded, Scopus)
2014
2014216. The current-voltage and capacitance-voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs
Ozerli H., Karteri I., KARATAŞ Ş., ALTINDAL Ş.
MATERIALS RESEARCH BULLETIN
, cilt.53, ss.211-217, 2014 (SCI-Expanded, Scopus)
2014
2014217. Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature
Yucedag I., Kaya A., ALTINDAL Ş., USLU İ.
CHINESE PHYSICS B
, cilt.23, sa.4, 2014 (SCI-Expanded, Scopus)
2014
2014218. Dielectric and optical properties of CdS-polymer nanocomposites prepared by the successive ionic layer adsorption and reaction (SILAR) method
Azizian-Kalandaragh Y., AYDEMİR U., ALTINDAL Ş.
Journal of Electronic Materials
, cilt.43, sa.4, ss.1226-1231, 2014 (SCI-Expanded, Scopus)
2014
2014219. Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes
Tascioglu I., Farooq W. A., TURAN R., ALTINDAL Ş., YAKUPHANOĞLU F.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.590, ss.157-161, 2014 (SCI-Expanded, Scopus)
2014
2014220. On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)
Tecimer H., Uslu H., Alahmed Z. A., Yakuphanoglu F., Altindal Ş.
COMPOSITES PART B-ENGINEERING
, cilt.57, ss.25-30, 2014 (SCI-Expanded, Scopus)
2014
2014221. Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range
Kaya A., Zeyrek S., SAN S. E., Altindal Ş.
CHINESE PHYSICS B
, cilt.23, sa.1, 2014 (SCI-Expanded, Scopus)
2013
2013222. A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes
AYDEMİR U., Tascioglu I., ALTINDAL Ş., USLU İ.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.16, sa.6, ss.1865-1872, 2013 (SCI-Expanded, Scopus)
2013
2013223. Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer
Durmus P., Yildirim M., Altindal Ş.
CURRENT APPLIED PHYSICS
, cilt.13, sa.8, ss.1630-1636, 2013 (SCI-Expanded, Scopus)
2013
2013224. Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p-Si and Al/Bi4Ti3O12/p-Si structures by using the admittance spectroscopy method
YILDIRIM M., DURMUŞ P., ALTINDAL Ş.
CHINESE PHYSICS B
, cilt.22, sa.10, 2013 (SCI-Expanded, Scopus)
2013
2013225. Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)
Tecimer H., Turut A., Uslu H., Altindal Ş., Uslu I.
SENSORS AND ACTUATORS A-PHYSICAL
, cilt.199, ss.194-201, 2013 (SCI-Expanded, Scopus)
2013
2013226. The effect of series resistance and interface states on the frequency dependent C-V and G/w-V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes
Zeyrek S., Acaroglu E., Altindal Ş., Birdogan S., Bulbul M. M.
CURRENT APPLIED PHYSICS
, cilt.13, sa.7, ss.1225-1230, 2013 (SCI-Expanded, Scopus)
2013
2013227. Dielectric Permittivity AC Conductivity and Electric Modulus Properties of Metal Ferroelectric Semiconductor MFS Structures
Parlaktürk F., Agasiev A., TATAROĞLU A., ALTINDAL Ş.
Gazi University Journal of Science , cilt.26, ss.501-508, 2013 (Scopus)
2013
2013228. The effect of metal work function on the barrier height of metal/CdS/SnO2/In-Ga structures
Tascioglu I., ALTINDAL Ş., POLAT İ., BACAKSIZ E.
CURRENT APPLIED PHYSICS
, cilt.13, sa.7, ss.1306-1310, 2013 (SCI-Expanded, Scopus)
2013
2013229. Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures
Cetinkaya H. G., Tecimer H., Uslu H., Altindal Ş.
CURRENT APPLIED PHYSICS
, cilt.13, sa.6, ss.1150-1156, 2013 (SCI-Expanded, Scopus)
2013
2013230. The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range
Korucu D., TÜRÜT A., ALTINDAL Ş.
CURRENT APPLIED PHYSICS
, cilt.13, sa.6, ss.1101-1108, 2013 (SCI-Expanded, Scopus)
2013
2013231. Trapping levels in TlGaSe2 single crystals
Ozdemir S., ALTINDAL Ş.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.566, ss.108-111, 2013 (SCI-Expanded, Scopus)
2013
2013232. Frequency and Voltage Dependence of Dielectric Loss of MgB2 Composites at Different Temperatures
Korucu D., Ertekin E., BELENLİ İ., ALTINDAL Ş.
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM
, cilt.26, sa.6, ss.2165-2170, 2013 (SCI-Expanded, Scopus)
2013
2013233. A detailed study on current-voltage characteristics of Au/n-GaAs in wide temperature range
Ozavci E., Demirezen S., AYDEMİR U., Altindal Ş.
SENSORS AND ACTUATORS A-PHYSICAL
, cilt.194, ss.259-268, 2013 (SCI-Expanded, Scopus)
2013
2013234. A study of polymer-derived erbia-doped Bi2O3 nanocrystalline ceramic powders
Aytimur A., Tascioglu I., ARI M., USLU İ., DAĞDEMİR Y., Durmus S., et al.
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
, cilt.66, sa.2, ss.317-323, 2013 (SCI-Expanded, Scopus)
2013
2013235. Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes
Korucu D., Turut A., TURAN R., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.16, sa.2, ss.344-351, 2013 (SCI-Expanded, Scopus)
2013
2013236. Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier
Afandiyeva I. M., Demirezen S., Altindal Ş.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.552, ss.423-429, 2013 (SCI-Expanded, Scopus)
2013
2013237. On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity in Al/SiO2/p-Si (MOS) Capacitors
Kaya A., ALTINDAL Ş., ŞAFAK ASAR Y., Sonmez Z.
CHINESE PHYSICS LETTERS
, cilt.30, sa.1, 2013 (SCI-Expanded, Scopus)
2013
2013238. The Main Electrical and Interfacial Properties of Benzotriazole and Fluorene Based Organic Devices
YILDIZ D. E., Apaydin D. H., Kaya E., ALTINDAL Ş., ÇIRPAN A.
JOURNAL OF MACROMOLECULAR SCIENCE PART A-PURE AND APPLIED CHEMISTRY
, cilt.50, sa.2, ss.168-174, 2013 (SCI-Expanded, Scopus)
2013
2013239. Two diodes model and illumination effect on the forward and reverse bias I-V and C-V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature
Demirezen S., Altindal Ş., Uslu I.
CURRENT APPLIED PHYSICS
, cilt.13, sa.1, ss.53-59, 2013 (SCI-Expanded, Scopus)
2012
2012240. Temperature dependent conductivity and structural properties of sol-gel prepared holmium doped Bi2O3 nanoceramic powder
Tascioglu I., Ari M., Uslu I., Kocyigit S., Dagdemir Y., Corumlu V., et al.
CERAMICS INTERNATIONAL
, cilt.38, sa.8, ss.6455-6460, 2012 (SCI-Expanded, Scopus)
2012
2012241. Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode
Tascioglu I., SOYLU M., ALTINDAL Ş., Al-Ghamdi A. A., Yakuphanoglu F.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.541, ss.462-467, 2012 (SCI-Expanded, Scopus)
2012
2012242. Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K
Korucu D., Efeoglu H., Turut A., Altindal Ş.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.15, sa.5, ss.480-485, 2012 (SCI-Expanded, Scopus)
2012
2012243. Schottky diode properties of CuInSe2 films prepared by a two-step growth technique
Tecimer H., Aksu S., Uslu H., Atasoy Y., Bacaksiz E., Altindal Ş.
SENSORS AND ACTUATORS A-PHYSICAL
, cilt.185, ss.73-81, 2012 (SCI-Expanded, Scopus)
2012
2012244. On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique
Korucu D., Turut A., TURAN R., Altindal Ş.
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
, cilt.55, sa.9, ss.1604-1612, 2012 (SCI-Expanded, Scopus)
2012
2012245. The effects of temperature, radiation, and illumination on current-voltage characteristics of Au/PVA(Co, Zn-doped)/n-Si Schottky diodes
DÖKME İ., ALTINDAL Ş., USLU İ.
JOURNAL OF APPLIED POLYMER SCIENCE
, cilt.125, sa.2, ss.1185-1192, 2012 (SCI-Expanded, Scopus)
2012
2012246. Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier
Afandiyeva I. M., Bulbul M. M., Altindal Ş., Bengi S.
MICROELECTRONIC ENGINEERING
, cilt.93, ss.50-55, 2012 (SCI-Expanded, Scopus)
2012
2012247. Structural and electrical characterization of rectifying behavior in n-type/intrinsic ZnO-based homojunctions
Yilmaz S., POLAT İ., ALTINDAL Ş., BACAKSIZ E.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
, cilt.177, sa.8, ss.588-593, 2012 (SCI-Expanded, Scopus)
2012
2012248. The effect of gamma irradiation on electrical and dielectric properties of Al-TiW-Pd2Si/n-Si Schottky diode at room temperature
DÖKME İ., ALTINDAL Ş.
CURRENT APPLIED PHYSICS
, cilt.12, sa.3, ss.860-864, 2012 (SCI-Expanded, Scopus)
2012
2012249. The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature
Uslu H., YILDIRIM M., ALTINDAL Ş., DURMUŞ P.
RADIATION PHYSICS AND CHEMISTRY
, cilt.81, sa.4, ss.362-369, 2012 (SCI-Expanded, Scopus)
2012
2012250. On the temperature dependent dielectric properties, conductivity and resistivity of MIS structures at 1 MHz
Eroglu A., TATAROĞLU A., Altindal Ş.
MICROELECTRONIC ENGINEERING
, cilt.91, ss.154-158, 2012 (SCI-Expanded, Scopus)
2012
2012251. Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer
Dökme İ., Yıldız D. E., Altındal Ş.
ADVANCES IN POLYMER TECHNOLOGY
, cilt.31, ss.63-70, 2012 (SCI-Expanded, Scopus)
2012
2012252. Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes
Gokcen M., Tunc T., Altindal Ş., Uslu I.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
, cilt.177, sa.5, ss.416-420, 2012 (SCI-Expanded, Scopus)
2012
2012253. Does fludarabine increase the incidence of sinusoidal obstruction syndrome when combined with Bu/Cy during conditioning?
Suyani E., Altindal Ş., Aki S. Z., Sucak G. T.
CLINICAL TRANSPLANTATION
, cilt.26, sa.2, 2012 (SCI-Expanded, Scopus)
2012
2012254. The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)
Gokcen M., Tunc T., Altindal Ş., Uslu I.
CURRENT APPLIED PHYSICS
, cilt.12, sa.2, ss.525-530, 2012 (SCI-Expanded, Scopus)
2012
2012255. Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics
VURAL Ö., ŞAFAK ASAR Y., Turut A., ALTINDAL Ş.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.513, ss.107-111, 2012 (SCI-Expanded, Scopus)
2012
2012256. Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures
Gokcen M., Altuntas H., Altindal Ş., Ozcelik S.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.15, sa.1, ss.41-46, 2012 (SCI-Expanded, Scopus)
2012
2012257. On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode
ŞAFAK ASAR Y., SOYLU M., YAKUPHANOĞLU F., ALTINDAL Ş.
JOURNAL OF APPLIED PHYSICS
, cilt.111, sa.3, 2012 (SCI-Expanded, Scopus)
2012
2012258. Effect of series resistance and interface states on the I-V, C-V and G/omega-V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature
Demirezen S., Sonmez Z., AYDEMİR U., Altindal Ş.
CURRENT APPLIED PHYSICS
, cilt.12, sa.1, ss.266-272, 2012 (SCI-Expanded, Scopus)
2011
2011259. The density of interface states and their relaxation times in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures
Bulbul M. M., Altindal Ş., Parlakturk F., TATAROĞLU A.
SURFACE AND INTERFACE ANALYSIS
, cilt.43, sa.13, ss.1561-1565, 2011 (SCI-Expanded, Scopus)
2011
2011260. On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods
Demirezen S., Altindal Ş., Ozcelik S., Ozbay E.
MICROELECTRONICS RELIABILITY
, cilt.51, sa.12, ss.2153-2162, 2011 (SCI-Expanded, Scopus)
2011
2011261. Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer
Gokcen M., Altindal Ş., Karaman M., AYDEMİR U.
PHYSICA B-CONDENSED MATTER
, cilt.406, sa.21, ss.4119-4123, 2011 (SCI-Expanded, Scopus)
2011
2011262. Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al-TiW-Pd2Si/n-Si Schottky Device at Two Frequencies
DÖKME İ., ALTINDAL Ş.
IEEE TRANSACTIONS ON ELECTRON DEVICES
, cilt.58, sa.11, ss.4042-4048, 2011 (SCI-Expanded, Scopus)
2011
2011263. Comparison of Pre- and Post-therapy 18F-FDG PET/CT Findings with The Findings of Clinical Follow-up in Patients with Hodgkin Lymphoma
Akdemir Ü. Ö., Kapucu L. Ö., Oz O., Suyani E., Tonyali O., Altindal Ş., et al.
EUROPEAN JOURNAL OF NUCLEAR MEDICINE AND MOLECULAR IMAGING
, cilt.38, 2011 (SCI-Expanded, Scopus)
2011
2011264. Negative Dielectric Constant and Electrical Conductivity of Au/n-Si (111) Schottky Barrier Diodes with PVA/Ni,Zn Interfacial Layer
Tunc T., Dokme İ., Altindal Ş., Uslu I.
JOURNAL OF APPLIED POLYMER SCIENCE
, cilt.122, sa.1, ss.265-272, 2011 (SCI-Expanded, Scopus)
2011
2011265. Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
Altuntas H., Altindal Ş., Corekci S., Ozturk M., Ozcelik S.
SEMICONDUCTORS
, cilt.45, sa.10, ss.1286-1290, 2011 (SCI-Expanded, Scopus)
2011
2011266. Preparation and Dielectric Properties of Polyvinyl Alcohol (Co, Zn Acetate) Fiber/n-Si and Polyvinyl Alcohol (Ni, Zn Acetate)/n-Si Schottky Diodes
TUNÇ T., Uslu H., ALTINDAL Ş.
FIBERS AND POLYMERS
, cilt.12, sa.7, ss.886-892, 2011 (SCI-Expanded, Scopus)
2011
2011267. FUZZY CONTROL OF SEMI-BATCH POLYMERIZATION REACTOR WITH GENETIC ALGORITHM
ALTINTEN A., Altindal Ş., Erdogan S., HAPOĞLU H.
JOURNAL OF THE FACULTY OF ENGINEERING AND ARCHITECTURE OF GAZI UNIVERSITY
, cilt.26, sa.3, ss.613-621, 2011 (SCI-Expanded, Scopus)
2011
2011268. Effect of Vanadium Substitution on the Dielectric Properties of Glass Ceramic Bi-2212 Superconductor
Cavdar Ş., KORALAY H., Altindal Ş.
JOURNAL OF LOW TEMPERATURE PHYSICS
, cilt.164, ss.102-114, 2011 (SCI-Expanded, Scopus)
2011
2011269. Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
Tunç T., Altındal Ş., Uslu İ., Dökme İ., Uslu H.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.14, sa.2, ss.139-145, 2011 (SCI-Expanded, Scopus)
2011
2011270. Effects of illumination on I-V, C-V and G/w-V characteristics of Au/n-CdTe Schottky barrier diodes
Kanbur H., Altindal Ş., Mammadov T., Safak Y.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.13, ss.713-718, 2011 (SCI-Expanded, Scopus)
2011
2011271. On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures
Uslu H., ALTINDAL Ş., POLAT İ., Bayrak H., BACAKSIZ E.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.509, sa.18, ss.5555-5561, 2011 (SCI-Expanded, Scopus)
2011
2011272. The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures
ALTINDAL Ş., Uslu H.
JOURNAL OF APPLIED PHYSICS
, cilt.109, sa.7, 2011 (SCI-Expanded, Scopus)
2011
2011273. The Illumination Intensity and Applied Bias Voltage on Dielectric Properties of Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes
Uslu H., ALTINDAL Ş., TUNÇ T., Uslu I., Mammadov T. S.
JOURNAL OF APPLIED POLYMER SCIENCE
, cilt.120, sa.1, ss.322-328, 2011 (SCI-Expanded, Scopus)
2011
2011274. Analysis of the forward and reverse bias I-V characteristics on Au/PVA: Zn/n-Si Schottky barrier diodes in the wide temperature range
Tascioglu I., AYDEMİR U., ALTINDAL Ş., KINACI B., ÖZÇELİK S.
JOURNAL OF APPLIED PHYSICS
, cilt.109, sa.5, 2011 (SCI-Expanded, Scopus)
2011
2011275. The Gaussian distribution of barrier height in Au/n-GaAs Schottky diodes at high temperatures
TATAROĞLU A., Altindal Ş., Pur F. Z., Ataseven T., Sezgin S.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.5, ss.438-442, 2011 (SCI-Expanded, Scopus)
2011
2011276. The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices
DÖKME İ., Tunc T., Uslu I., Altindal Ş.
SYNTHETIC METALS
, cilt.161, ss.474-480, 2011 (SCI-Expanded, Scopus)
2011
2011277. On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures
Tekeli Z., Gokcen M., Altindal Ş., Ozcelik S., Ozbay E.
MICROELECTRONICS RELIABILITY
, cilt.51, sa.3, ss.581-586, 2011 (SCI-Expanded, Scopus)
2011
2011278. Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)
Bengi A., Uslu H., Asar T., Altindal Ş., Cetin S. Ş., Mammadov T. S., et al.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.509, sa.6, ss.2897-2902, 2011 (SCI-Expanded, Scopus)
2011
2011279. Anomalous Peak in the Forward-Bias C-V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures
TUNÇ T., ALTINDAL Ş., DÖKME İ., Uslu H.
JOURNAL OF ELECTRONIC MATERIALS
, cilt.40, sa.2, ss.157-164, 2011 (SCI-Expanded, Scopus)
2011
2011280. On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p-Si (MIS) structures
Pakma O., Serin N., Serin T., Altindal Ş.
PHYSICA B-CONDENSED MATTER
, cilt.406, sa.4, ss.771-776, 2011 (SCI-Expanded, Scopus)
2011
2011281. Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
Arslan E., Butun S., ŞAFAK ASAR Y., Uslu H., Tascioglu I., ALTINDAL Ş., et al.
MICROELECTRONICS RELIABILITY
, cilt.51, sa.2, ss.370-375, 2011 (SCI-Expanded, Scopus)
2011
2011282. A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
Yildiz D. E., Altindal Ş.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.13, ss.53-58, 2011 (SCI-Expanded, Scopus)
2011
2011283. The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes
Ozdemir S., DÖKME İ., ALTINDAL Ş.
INTERNATIONAL JOURNAL OF ELECTRONICS
, cilt.98, sa.6, ss.699-712, 2011 (SCI-Expanded, Scopus)
2011
2011284. On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness
Yildirim M., Eroglu A., Altindal Ş., Durmus P.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.13, ss.98-105, 2011 (SCI-Expanded, Scopus)
2010
2010285. The dependence of electrical properties of Al/NphAOEMA/PEDOT-PSS/ITO structures on temperature
Sahingoz R., Cavus H. K., Altindal Ş., Soykan C., Dokme İ.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.4, sa.12, ss.2132-2135, 2010 (SCI-Expanded, Scopus)
2010
2010286. AC electrical conductivity and dielectric properties of Al/NphAOEMA/PEDOT-PSS/ITO structure at different temperatures
Sahingoz R., Cavus H. K., Altindal Ş.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.4, sa.11, ss.1779-1782, 2010 (SCI-Expanded, Scopus)
2010
2010287. Illumination effect on electrical characteristics of organic-based Schottky barrier diodes
Uslu H., ALTINDAL Ş., DÖKME İ.
JOURNAL OF APPLIED PHYSICS
, cilt.108, sa.10, 2010 (SCI-Expanded, Scopus)
2010
2010288. Temperature and frequency dependent dielectric properties of Au/Bi4Ti3O12/SiO2/Si (MFIS) structures
Altindal Ş., Parlakturk F., TATAROĞLU A., Bulbul M. M.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.12, sa.10, ss.2139-2144, 2010 (SCI-Expanded, Scopus)
2010
2010289. The Effect of Gamma Irradiation on Electrical Characteristics of Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes
Tascioglu I., Uslu H., Altindal Ş., Durmus P., Dokme İ., Tunc T.
JOURNAL OF APPLIED POLYMER SCIENCE
, cilt.118, sa.1, ss.596-603, 2010 (SCI-Expanded, Scopus)
2010
2010290. The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
Tascioglu I., AYDEMİR U., ALTINDAL Ş.
JOURNAL OF APPLIED PHYSICS
, cilt.108, sa.6, 2010 (SCI-Expanded, Scopus)
2010
2010291. Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers
Uslu H., Bengi A., Cetin S. Ş., AYDEMİR U., Altindal Ş., Aghaliyeva S. T., et al.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.507, sa.1, ss.190-195, 2010 (SCI-Expanded, Scopus)
2010
2010292. A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer
Bengi A., Aydemir U., Altindal Ş., Özen Y., Ozcelik S.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.505, ss.628-633, 2010 (SCI-Expanded, Scopus)
2010
2010293. Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes
Bulbul M. M., Bengi S., Dokme İ., Altindal Ş., Tunc T.
JOURNAL OF APPLIED PHYSICS
, cilt.108, sa.3, 2010 (SCI-Expanded, Scopus)
2010
2010294. Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer
Dokme İ., Tunc T., Altindal Ş., Uslu I.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.4, sa.8, ss.1225-1228, 2010 (SCI-Expanded, Scopus)
2010
2010295. Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range
Yildiz D. E., Altindal Ş.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.4, sa.7, ss.1002-1007, 2010 (SCI-Expanded, Scopus)
2010
2010296. The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes
Uslu H., Altindal Ş., AYDEMİR U., Dokme İ., Afandiyeva I. M.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.503, sa.1, ss.96-102, 2010 (SCI-Expanded, Scopus)
2010
2010297. Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer
Tunc T., Dokme İ., Altindal Ş., Uslu I.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.4, sa.7, ss.947-950, 2010 (SCI-Expanded, Scopus)
2010
2010298. Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode
Altuntas H., Bengi A., Asar T., Aydemir U., Sarikavak B., Özen Y., et al.
SURFACE AND INTERFACE ANALYSIS
, cilt.42, sa.6-7, ss.1257-1260, 2010 (SCI-Expanded, Scopus)
2010
2010299. Temperature Dependence Electrical Characteristics of n-GaAs Structure Grown by MBE
Kınacı B., Asar T., Özen Y., Altındal Ş., Mammadov T., Özçelik S.
Azerbaijan Journal of Physics, Fizika , cilt.16, sa.2, ss.335-338, 2010 (Hakemli Dergi)
2010
2010300. Illumination effect on I-V, C-V and G/w-V characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature
Uslu H., Dokme İ., Afandiyeva I. M., Altindal Ş.
SURFACE AND INTERFACE ANALYSIS
, cilt.42, ss.807-811, 2010 (SCI-Expanded, Scopus)
2010
2010301. A comparative of energy density distribution of surface states profiles with 50 and 826 Å insulator layer in Al SiO2 p Si
ALTINDAL Ş., KAYA A., SÖNMEZ Z., ŞAFAK ASAR Y.
Azerbaijan Journal of Physics, Fizika, (ISSN 1028-8546) , cilt.16, sa.2, ss.356-358, 2010 (Hakemli Dergi)
2010
2010302. The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AlN/GaN heterostructures
ALTINDAL Ş., ŞAFAK ASAR Y., Tascioglu I., ÖZBAY E.
SURFACE AND INTERFACE ANALYSIS
, cilt.42, ss.803-806, 2010 (SCI-Expanded, Scopus)
2010
2010303. Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range
Vural O., Safak Y., Altindal Ş., Turut A.
CURRENT APPLIED PHYSICS
, cilt.10, sa.3, ss.761-765, 2010 (SCI-Expanded, Scopus)
2010
2010304. The effects of series resistance on the forward bias I-V characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures
TATAROĞLU A., Altindal Ş., AYDEMİR U., Uslu H.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.4, sa.5, ss.616-619, 2010 (SCI-Expanded, Scopus)
2010
2010305. Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures
Arslan E., ŞAFAK ASAR Y., ALTINDAL Ş., Kelekci O., ÖZBAY E.
JOURNAL OF NON-CRYSTALLINE SOLIDS
, cilt.356, ss.1006-1011, 2010 (SCI-Expanded, Scopus)
2010
2010306. The role of Co-60 gamma-ray irradiation on the interface states and series resistance in MIS structures
Tascioglu I., Tataroğlu A., Özbay A., Altındal Ş.
RADIATION PHYSICS AND CHEMISTRY
, cilt.79, ss.457-461, 2010 (SCI-Expanded, Scopus)
2010
2010307. The distribution of barrier heights in Au/n-Si Schottky barrier diodes from I-V-T measurements
Durmus P., Cuha B., Altindal Ş., AYDEMİR U.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.4, sa.4, ss.579-583, 2010 (SCI-Expanded, Scopus)
2010
2010308. The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature
Uslu H., Safak Y., Tascioglu I., Altindal Ş.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.12, sa.2, ss.262-266, 2010 (SCI-Expanded, Scopus)
2010
2010309. On the temperature dependent profile of interface states and series resistance characteristics in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures
Demirezen S., Altindal Ş.
PHYSICA B-CONDENSED MATTER
, cilt.405, sa.4, ss.1130-1138, 2010 (SCI-Expanded, Scopus)
2010
2010310. The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
Yildiz D. E., Altindal Ş., Tekeli Z., Ozer M.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.13, sa.1, ss.34-40, 2010 (SCI-Expanded, Scopus)
2010
2010311. Temperature and frequency dependent dielectric properties of Au/Bi 4Ti3O12/SiO2/Si (MFIS) structures
ALTINDAL Ş., Parlaktürk F., TATAROĞLU A., BÜLBÜL M. M.
Journal of Optoelectronics and Advanced Materials
, cilt.12, sa.10, ss.2139-2143, 2010 (SCI-Expanded, Scopus)
2010
2010312. Frequency and Temperature Dependence of Dielectric Properties of Au/Polyvinyl Alcohol (Co, Ni-Doped)/n-Si Schottky Diodes
TUNÇ T., Uslu I., DÖKME İ., ALTINDAL Ş., Uslu H.
INTERNATIONAL JOURNAL OF POLYMERIC MATERIALS
, cilt.59, sa.10, ss.739-756, 2010 (SCI-Expanded, Scopus)
2010
2010313. Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
Dokme İ., Altindal Ş., Tunc T., Uslu I.
MICROELECTRONICS RELIABILITY
, cilt.50, sa.1, ss.39-44, 2010 (SCI-Expanded, Scopus)
2009
2009314. Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range
Altuntas H., Bengi A., Aydemir U., Asar T., Cetin S. Ş., Kars İ., et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.12, sa.6, ss.224-232, 2009 (SCI-Expanded, Scopus)
2009
2009315. Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current-voltage and admittance-voltage characteristics
Altindal Ş., Yucedag I., TATAROĞLU A.
VACUUM
, cilt.84, sa.3, ss.363-368, 2009 (SCI-Expanded, Scopus)
2009
2009316. The effect of series resistance and surface states on current-voltage (I-V) characteristics of Au/n-GaAs/GaAs structures at wide temperature range
Bengi A., Mammadov T. S., Ozcelik S., Altindal Ş.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.3, sa.11, ss.1155-1160, 2009 (SCI-Expanded, Scopus)
2009
2009317. The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I-V characteristics
TATAROĞLU A., Altindal Ş.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.484, ss.405-409, 2009 (SCI-Expanded, Scopus)
2009
2009318. Electrical Characteristics of Al/Polyindole Schottky Barrier Diodes. I. Temperature Dependence
Altindal Ş., SARI B., ÜNAL H. İ., Yavas N.
JOURNAL OF APPLIED POLYMER SCIENCE
, cilt.113, sa.5, ss.2955-2961, 2009 (SCI-Expanded, Scopus)
2009
2009319. A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range
Altuntas H., Altindal Ş., Shtrikman H., Ozcelik S.
MICROELECTRONICS RELIABILITY
, cilt.49, sa.8, ss.904-911, 2009 (SCI-Expanded, Scopus)
2009
2009320. Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures
Arslan E., ALTINDAL Ş., ÖZÇELİK S., ÖZBAY E.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, cilt.24, sa.7, 2009 (SCI-Expanded, Scopus)
2009
2009321. Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts
ÖZDEMİR A. F., ALDEMİR D. A., KÖKCE A., Altindal Ş.
SYNTHETIC METALS
, cilt.159, sa.14, ss.1427-1432, 2009 (SCI-Expanded, Scopus)
2009
2009322. The distribution of barrier heights in MIS type Schottky diodes from current-voltage-temperature (I-V-T) measurements
TATAROĞLU A., ALTINDAL Ş.
JOURNAL OF ALLOYS AND COMPOUNDS
, cilt.479, ss.893-897, 2009 (SCI-Expanded, Scopus)
2009
2009323. Frequency Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures
AYDEMİR U., ŞAFAK ASAR Y., ALTINDAL Ş., AGASİYEV A. A.
Journal of Optoelectronics and Advanced Materials - Symposia , cilt.1, sa.3, ss.258-261, 2009 (Hakemli Dergi)
2009
2009324. The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure
Oezdemir A. F., Kotan Z., ALDEMİR D. A., Altindal Ş.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
, cilt.46, sa.2, 2009 (SCI-Expanded, Scopus)
2009
2009325. The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol-gel method
Pakma O., Serin N., Serin T., Altindal Ş.
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
, cilt.50, sa.1, ss.28-34, 2009 (SCI-Expanded, Scopus)
2009
2009326. Gamma-ray irradiation effects on the interface states of MIS structures
TATAROĞLU A., Altindal Ş.
SENSORS AND ACTUATORS A-PHYSICAL
, cilt.151, sa.2, ss.168-172, 2009 (SCI-Expanded, Scopus)
2009
2009327. Electrical characteristics of Au/n-GaAs Schottky barrier diodes with and without SiO2 insulator layer at room temperature
Altuntas H., Altindal Ş., Oezcelik S., Shtrikman H.
VACUUM
, cilt.83, sa.7, ss.1060-1065, 2009 (SCI-Expanded, Scopus)
2009
2009328. Characterization of series resistance in the Sn/p-InP Schottky barrier diodes using temperature dependent C-V,G/w and DLTS
Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.3, sa.3, ss.171-174, 2009 (SCI-Expanded, Scopus)
2009
2009329. Irradiation effects on the C-V and G/omega-V characteristics of Sn/p-Si (MS) structures
Karatas S., Tueruet A., Altindal Ş.
RADIATION PHYSICS AND CHEMISTRY
, cilt.78, sa.2, ss.130-134, 2009 (SCI-Expanded, Scopus)
2009
2009330. On the Frequency and Voltage Dependent Interface States and Series Resistance in Au SrTiO3 n Si Structures
AYDEMİR U., ŞAFAK ASAR Y., MAMMADOV T. S., ALTINDAL Ş.
Balkan Physics Letters , cilt.15, sa.1, ss.151050, 2009 (Hakemli Dergi)
2009
2009331. Temperature Dependent Electrical Characteristics of Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures
ŞAFAK ASAR Y., AYDEMİR U., ALTINDAL Ş., MAMMADOV T. S., TATAROĞLU A.
Journal of Optoelectronics and Advanced Materials - Symposia , cilt.1, sa.3, ss.266-269, 2009 (Hakemli Dergi)
2009
2009332. Origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n=InP Schottky Barier Diodes (SBDs)
Korucu D., Altindal Ş., Mammadov T. S., Ozcelik S.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, cilt.11, sa.2, ss.192-196, 2009 (SCI-Expanded, Scopus)
2009
2009333. The Barrier Height Distribution in Metal Ferroelectric Semiconductor Au SrTiO3 n Si Structures
ŞAFAK ASAR Y., AYDEMİR U., ALTINDAL Ş., MAMMADOV T.
Balkan Physics Letters , cilt.15, sa.1, ss.151056, 2009 (Hakemli Dergi)
2009
2009334. On the temperature dependent anomalous peak and negative capacitance in Au/n-InP Schottky barrier diodes
Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.3, sa.1, ss.56-59, 2009 (SCI-Expanded, Scopus)
2009
2009335. Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures
Arslan E., ALTINDAL Ş., Oezcelik S., ÖZBAY E.
JOURNAL OF APPLIED PHYSICS
, cilt.105, sa.2, 2009 (SCI-Expanded, Scopus)
2008
2008336. The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range
Zeyrek S., Buelbuel M. M., Altindal Ş., Baykul M. C., Yuezer H.
BRAZILIAN JOURNAL OF PHYSICS
, cilt.38, sa.4, ss.591-597, 2008 (SCI-Expanded, Scopus)
2008
2008337. Temperature dependent behavior of Sn/p-InP Schottky barrier diodes
Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.2, sa.12, ss.766-769, 2008 (SCI-Expanded, Scopus)
2008
2008338. Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures
Goekcen M., Altuntas H., Altindal Ş.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.2, sa.12, ss.838-841, 2008 (SCI-Expanded, Scopus)
2008
2008339. MBE-growth and characterization of InxGa1-xAs/GaAs (x=0.15) superlattice
Sarikavak B., Oeztuerk M., Altuntas H., Mammedov T. S., Altindal Ş., Oezcelik S.
REVISTA MEXICANA DE FISICA
, cilt.54, sa.6, ss.416-421, 2008 (SCI-Expanded, Scopus)
2008
2008340. Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods
TATAROĞLU A., Altindal Ş.
MICROELECTRONIC ENGINEERING
, cilt.85, sa.11, ss.2256-2260, 2008 (SCI-Expanded, Scopus)
2008
2008341. The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures
Tekeli Z., Altindal Ş., Çakmak M., Ozcelik S., Ozbay E.
MICROELECTRONIC ENGINEERING
, cilt.85, ss.2316-2321, 2008 (SCI-Expanded, Scopus)
2008
2008342. Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p(+) (MOS) structures
Pakma O., Serin N., Serin T., Altindal Ş.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
, cilt.41, sa.21, 2008 (SCI-Expanded, Scopus)
2008
2008343. The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures
Pakma O., Serin N., Serin T., Altindal Ş.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, cilt.23, sa.10, 2008 (SCI-Expanded, Scopus)
2008
2008344. Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range
Bengi A., Altindal Ş., Ozcelik S., Agaliyeva S. T., Mammadov T. S.
VACUUM
, cilt.83, sa.2, ss.276-281, 2008 (SCI-Expanded, Scopus)
2008
2008345. Study on the frequency dependence of electrical and dielectric characteristics of Au/SnO2/n-Si (MIS) structures
TATAROĞLU A., Altindal Ş.
MICROELECTRONIC ENGINEERING
, cilt.85, sa.9, ss.1866-1871, 2008 (SCI-Expanded, Scopus)
2008
2008346. Frequency and gate voltage effects on the dielectric properties of Au/SiO(2)/n-Si structures
Dokme İ., ALTINDAL Ş., Gokcen M.
MICROELECTRONIC ENGINEERING
, cilt.85, sa.9, ss.1910-1914, 2008 (SCI-Expanded, Scopus)
2008
2008347. The frequency dependent electrical characteristics of Sn/p-InP Schottky barrier diodes (SBDs)
Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.2, sa.9, ss.525-529, 2008 (SCI-Expanded, Scopus)
2008
2008348. On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/P-Si (MIS) Schottky diodes
Altindal Ş., Kanbur H., Yuecedag I., TATAROĞLU A.
MICROELECTRONIC ENGINEERING
, cilt.85, sa.7, ss.1495-1501, 2008 (SCI-Expanded, Scopus)
2008
2008349. The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
Pakma O., Serin N., Serin T., Altindal Ş.
JOURNAL OF APPLIED PHYSICS
, cilt.104, sa.1, 2008 (SCI-Expanded, Scopus)
2008
2008350. Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures
TATAROĞLU A., Yuecedag I., Altindal Ş.
MICROELECTRONIC ENGINEERING
, cilt.85, sa.7, ss.1518-1523, 2008 (SCI-Expanded, Scopus)
2008
2008351. Characterization of interface states at Au/SnO2/n-Si (MOS) structures
TATAROĞLU A., Altindal Ş.
VACUUM
, cilt.82, sa.11, ss.1203-1207, 2008 (SCI-Expanded, Scopus)
2008
2008352. The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures
Altindal Ş., Parlaktuerk F., TATAROĞLU A., PARLAK M., Sarmasov S. N., Agasiev A. A.
VACUUM
, cilt.82, sa.11, ss.1246-1250, 2008 (SCI-Expanded, Scopus)
2008
2008353. Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes
Yildiz D. E., Altindal Ş., Kanbur H.
JOURNAL OF APPLIED PHYSICS
, cilt.103, sa.12, 2008 (SCI-Expanded, Scopus)
2008
2008354. The distribution of the barrier height in Al-TiW-Pd2Si/n-Si Schottky diodes from I-V-T measurements
Dokme İ., ALTINDAL Ş., Afandiyeva I. M.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, cilt.23, sa.3, 2008 (SCI-Expanded, Scopus)
2008
2008355. The interface states analysis of the MIS structure as a function of frequency
TATAROĞLU A., Altindal Ş.
MICROELECTRONIC ENGINEERING
, cilt.85, sa.3, ss.542-547, 2008 (SCI-Expanded, Scopus)
2008
2008356. Effects of gamma-ray irradiation on the C-V and G/omega-V characteristics of Al/SiO2/p-Si (MIS) structures
Dokme İ., DURMUŞ P., ALTINDAL Ş.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, cilt.266, sa.5, ss.791-796, 2008 (SCI-Expanded, Scopus)
2008
2008357. Effects of illumination and Co-60 gamma-ray irradiation on the electrical characteristics of porous silicon solar cells
Tuezuen O., Altindal Ş., Oktik S.
RENEWABLE ENERGY
, cilt.33, sa.2, ss.286-292, 2008 (SCI-Expanded, Scopus)
2008
2008358. On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes
Yildiz D. E., Altindal Ş.
MICROELECTRONIC ENGINEERING
, cilt.85, sa.2, ss.289-294, 2008 (SCI-Expanded, Scopus)
2008
2008359. Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures
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MICROELECTRONIC ENGINEERING
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2008
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MICROELECTRONIC ENGINEERING
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2008
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MICROELECTRONIC ENGINEERING
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2008
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RADIATION PHYSICS AND CHEMISTRY
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2008
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MICROELECTRONIC ENGINEERING
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2007
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Gazi University Journal of Science , cilt.20, ss.97-102, 2007 (ESCI, Scopus, TRDizin)
2007
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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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2007
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PHYSICA B-CONDENSED MATTER
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2007
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
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2007
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SYNTHETIC METALS
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2007
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2007
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Azerbaijan Journal of Physics, Fizika , cilt.13, sa.4, ss.219-223, 2007 (Hakemli Dergi)
2007
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SOLID-STATE ELECTRONICS
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2007
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PHYSICA B-CONDENSED MATTER
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2007
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PHYSICA B-CONDENSED MATTER
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2007
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PHYSICA B-CONDENSED MATTER
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2007
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PHYSICA B-CONDENSED MATTER
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2007
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APPLIED SURFACE SCIENCE
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2007
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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2007
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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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2007
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MICROELECTRONIC ENGINEERING
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
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2006
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2005
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2005
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2003
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MICROELECTRONICS JOURNAL
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2003
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5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2018), 4 - 06 Ekim 2018, (Özet Bildiri)
2018
201824. The Photovoltaik Properties of Al/TiO2/p-Si Schottky Diode
SEVGİLİ Ö., Şahinkaya M. A., ORAK İ., ALTINDAL Ş.
Turkish Physical Society 34th International Physich Congress, 5 - 09 Eylül 2018, (Özet Bildiri)
2018
201825. Frequency Dependent on Electric Properties of Al/TiO2-(R-CuWs)/pSi Schottky Diode
SEVGİLİ Ö., Şahinkaya M. A., ORAK İ., ÖZEL F., ALTINDAL Ş.
Turkish Physical Society 34th International Physich Congress, 5 - 09 Eylül 2018, (Özet Bildiri)
2017
201726. ANOMALOUS PEAK AND NEGATIVE CAPACITANCE BEHAVIOR IN THE FORWARD BIAS C-V PLOTS OF THE Al/(7 Zn-DOPED PVA)/p-Si (MPS) STRUCTURE
ERBİLEN TANRIKULU E., ALTINDAL Ş.
International Congress on Semiconductor Materials and Devices, 17 - 19 Ağustos 2017, (Özet Bildiri)
2017
201727. On the profıle of temperature dependent main electrical parameters inAl/P3HT/p-Si (MPS) structures at low temperatures
YÜKSELTÜRK E., ÇOTUK M., BÜLBÜL M. M., ALTINDAL Ş., ZEYREK S.
InternationalCongress on Semiconductor Materials and Devices (ICSMD-2017), Konya, Türkiye, 17 - 19 Ağustos 2017, (Özet Bildiri)
2017
201728. THE INVESTIGATION OF FREQUENCY AND VOLTAGE DEPENDENCE ON ELECTRIC CHARACTERISTICS OF Al/P3HT/ P-Si (MPS) STRUCTURES
YÜKSELTÜRK E., ÇOTUK M., BÜLBÜL M. M., ALTINDAL Ş., ZEYREK S.
INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIAL AND DEVICES, 17 - 19 Ağustos 2017, (Özet Bildiri)
2017
201729. Frequency and voltage dependence profiles and some main electrical parameters of the Al/(7 Zn-doped PVa)/p-Si (MPS) structures
ERBİLEN TANRIKULU E., ALTINDAL Ş.
International Congress on semiconductor materials and devices, 17 - 19 Ağustos 2017, (Özet Bildiri)
2017
201730. Anonalous peak and negative capacitance behaviour in the forward bias c-V plots of the A(7 Zn-doped PVA)/p-Si (MPS) Structure
ERBİLEN TANRIKULU E., ALTINDAL Ş.
International Congress on semiconductor materials and devices, 17 - 19 Ağustos 2017, (Özet Bildiri)
2017
201731. On the Frequency and Voltage Dependence of Dielectric Properties and ElectricModulus in Al/Bi4Ti3O12/n-Si (MFS) Capacitors by Using Impedance SpectroscopyMethod
DURMUŞ P., BİLKAN Ç., ALTINDAL Ş., DÖKME İ.
4th Internatıonal conference on materials science and nanotechnology for next generation, 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201732. Comparative Study on the Frequency Dependent Dielectric Properties of Au/n-SiC Metal- Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures
YÜCEDAĞ İ., ERSÖZ G., DEMİR A., ALTINDAL Ş.
The 25th annual international conference on composites/nanoengineering (ICCE-25), 16 - 22 Temmuz 2017, (Özet Bildiri)
2017
201733. Effects of J-Ray Irradiation on the C–V and G/ω–V Characteristics of Al/SiO2/p-Si(MIS) Structures
DÖKME İ., DURMUŞ P., ALTINDAL Ş.
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201734. The Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Type Silicon Schottky Barrier Devices
DÖKME İ., DURMUŞ P., ALTINDAL Ş.
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201735. The Electrical Characteristics of Al/TiO2-GO/n-Si Schottky Structures
DÖKME İ., DURMUŞ P., ALTINDAL Ş.
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201736. Schottky Diode with Curcumin (C21H20O6) Interfacial Layer
DÖKME İ., AYDIN F., Karabulut B., ALTINDAL Ş.
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201737. the investigation of the frequency dependent profile of Te/NaF:CdS/SnO2 Schottky diodes
SEVGİLİ Ö., ALTINDAL Ş., BACAKSIZ E.
4th international conference on materials science and nanotechnology for next generation, 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201738. Dielectric Constant, Electric Modulus and Electrical Conductivity in Identically Prepared Diodes of Al/Bi4Ti3O12/p-Si (MFS) Structure with Barrier and Thickness Inhomogeneity
DURMUŞ P., ÇETİNKAYA H. G., YILDIRIM M., ALTINDAL Ş., DÖKME İ.
4th Internatıonal conference on materials science and nanotechnology for next generation(MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201739. Complex Dielectric Constant and Complex Electric Modulus of Al/Bi4Ti3O12/p-Si (MFS)Structures as Function of Voltage at Room Temperature
ÇETİNKAYA H. G., ALTINDAL Ş.
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201740. Surface States, Series Resistance and Interfacial Bi4Ti3O12 Layer Effects on the Electrical and dielectric Properties of Al/Bi4Ti3O12/p-Si (MFS) Structure
ÇETİNKAYA H. G., YILDIRIM M., DURMUŞ P., ALTINDAL Ş.
4th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2017), 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201741. On the temperature and voltage dependent negative dielectric constant, electric modulus and ac electrical conductivity in the Au/Ti/Al2O3/n-GaAs (MIS) structures at 1MHz.
GÜÇLÜ Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.
4th International Conference on Materials Science and Nanotechnology for Next Generation (MSNG-2017), 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201742. Electrical parameteser of Aı/p-si (MS) structures with (3 Zn-PVA) interfacial layer using current-valtage and capacitance voltage (C-V) measurements at room temperature
ALTINDAL Ş., Karabulut B., USLU H., USLU İ.
4th International conference on materials science and nanotechnology for next generation, 28 - 30 Haziran 2017, (Özet Bildiri)
2017
201743. On the Profile of Frequency and Voltage Dependent Interface States and SeriesResistance in Au/(Co3O4-doped PVA)/n-Si Schottky Barrier Diodes (SBDs) at RoomTemperature
DEMİREZEN S., ALTINDAL Ş.
4th Internatıonal conference on materials science and nanotechnology for next generation(MSNG2017), 28 Haziran - 30 Temmuz 2017, (Özet Bildiri)
2016
201644. Electrical and Dielectric Properties in identically fabricated Al/Bi3Ti4O12/n-Si (MFS) structures by Capacitance/Conductance-Voltage Measurements
ÇETİNKAYA H. G., ALTINDAL Ş.
2nd International Advanced and Functional Materials Technologies (AFMAT 2016), 20 - 22 Ekim 2016, (Özet Bildiri)
2016
201645. Electrical and Dielectric Properties in identically fabricated Al Bi3Ti4O 2ln Si MFS structures by Capaci tance Conductance Vol tage Measurements
ÇETİNKAYA H. G., ALTINDAL Ş.
2nd international Advanced a6d Functıoniı Materials Technologies (AFMAT) 2016, 20 - 22 Ekim 2016, (Özet Bildiri)
2016
201646. Temperature dependent dielectric properties of Au Ti Al 2O3 n GaAs MIS structure in wide voltage range of 6V
Güçlü Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.
3st International NANOSCIENCE &NANOTECHNOLOGY FOR NEXTGENERATION(NaNoNG 2016) Conference, 20 - 22 Ekim 2016, (Özet Bildiri)
2016
201647. Interlayer Thickness Dependent WElectrical Characteristics off Al 3 Zn doped Al PVA p Si MPS structures at Room Temperatur
Badali Y., Nikravan A., Benli B. B., ALTINDAL Ş., USLU İ.
Ist International Undergraond Resorces and Energy Conference, Yozgat, Türkiye, 6 - 08 Kasım 2016, ss.84, (Özet Bildiri)
2016
201648. Electrical Characterization and Sources of Energy Losses in Solar Cells
ALTINDAL Ş., ÇETİNKAYA H. G.
lst International Underground Resources and Energy Conference, 6 - 08 Ekim 2016, (Özet Bildiri)
2016
201649. Electrical characteristics of GaAs AlGaAs Structures in thewide Frequency ranges
Bektaş C., GÜNEŞ M., LİŞESİVDİN B., Henini M., ALTINDAL Ş.
2nd International Congress on The World of Technology and Advanced Materials, Kırşehir, Türkiye, 28 Eylül - 02 Ekim 2016, (Tam Metin Bildiri)
2016
201650. A compare study on dielectric properties electric conductivity and electricalmodulus of Au n SiC structures with three different thickness interfacial ZndoppedPVA layers as function of thickness and frequency at room temperature
lapa h. e., aldharob m. h. a., kökçe a., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.
2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, (Özet Bildiri)
2016
201651. Influence Of Frequency And Applied Voltage On Dielectric Properties Electric ModulusAnd Electrical Conductivity In Ag 3Ru doped PVP n Si Structures
kaya g., badali y., nikravan a., ALTINDAL Ş., USLU İ.
2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, (Özet Bildiri)
2016
201652. On the dielectric relaxation electric modulus and ac electrical conductivityusingimpedance spectroscopy method in Au Zn dopped PVA n SiC MPS organic structures
lapa h. e., aldharob m. h. a., kökçe a., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.
2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, (Özet Bildiri)
2016
201653. Determining electrical and dielectric properties dependence on various frequencies of Al ZnS PVA p Si MPS structures
BARAZ N., YÜCEDAĞ İ., AzizianKalandaragh Y., ALTINDAL Ş.
2nd International Conference on Organic Electronic Material Technologies (OEMT2016), 17 - 19 Mayıs 2016, (Özet Bildiri)
2016
201654. Two diodes model and CdSe PVA interfacial layer effect on the forward bias current voltage I V characteristics of Au CdSe PVA n Si Schottky barrier diodes
ALTINDAL Ş., BİLKAN Ç.
2 nd International Conference on Organic Electronic Material Technologies, 17 - 19 Mayıs 2016, (Özet Bildiri)
2016
201655. Current Conduction Mechanisms CCMs in Au ZnO n Si Schottky Barrier Diodesin Wide Temperature Range
Badali Y., Kaya G., Nikravan A., ALTINDAL Ş., USLU İ.
2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, (Özet Bildiri)
2016
201656. The effects of surface states Nss series resistance Rs and interlayer on the current voltage and impedance voltage characteristics in Au n Si Ag Schottky barrier diodes SBDs
BİLKAN Ç., ALTINDAL Ş.
2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), 17 - 19 Mayıs 2016, (Özet Bildiri)
2016
201657. MPS Tipi Schootky Engel Diyotların SED Oda Sıcaklığındaki Elektriksel Özellikleri ve Yalıtkan 0 07 Zn katkılı PVA Tabakanın Etkisi
ERBİLEN TANRIKULU E., ALTINDAL Ş., USLU İ.
Adım Fizik Günleri V, Eskişehir, Türkiye, 21 - 23 Nisan 2016, (Özet Bildiri)
2016
201658. Frequency and Voltage Dependence of the Main Electrical Parameters of Au ZnO n Si Structures at Room Temperature
Nikravan A., Kaya G., Badali Y., ALTINDAL Ş., USLU İ.
İnternational Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016
2016
201659. The İnvestigation of Electrical Characteristics of Ag Ru Doped PVP n Si Structures as Function of Frequency at Room Temperatures
Kaya G., Badali Y., nikravan A., ALTINDAL Ş., USLU İ.
İnternational Physics Conference at the Anatolian Peak, Erzurum, Türkiye, 25 - 27 Şubat 2016
2016
201660. Influence of Frequency and Applied Voltage on Dielectric Properties Electric Modules and Electrical Conductivity in Au Zn n Si Structures
badali Y., Nikravan A., Kaya G., ALTINDAL Ş., USLU İ.
İnternational Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016
2016
201661. The preparation of different Interfaced Zn PVA Structures of Al p Si MPS and Analysis of I V and C G V electrical Characteristics
Benli B. B., ALTINDAL Ş., USLU İ.
İnternational Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016
2016
201662. On the Forward Bias Anomalous Peak and Negative Capacitance NC in Al ZnO p Si Structures at Room Temperatures
Aytimur A., ALTINDAL Ş., USLU İ.
İnternational Physics Conference at the Anatolian Peak, Erzurum, Türkiye, 25 - 27 Şubat 2016
2016
201663. The Investigation of Electrical Characteristics of Ag Ru Doped PVP n Si Structures as Function of Frequency at Room Temperature
Kaya G., Badali Y., Nikravan A., ALTINDAL Ş., USLU İ.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201664. The Investigation of Frequency Dependence of Electrical Parameters of Al P Si Structures With 10 Nm Interfacial Bi4ti3o12 Layer
DURMUŞ P., ALTINDAL Ş., YILDIRIM M.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201665. Interfacial layer thickness effect on the performance of Au Zn dopped PVA n 4H SiC MPS structures at room temperature
lapa H. E., KÖKCE A., ORAK İ., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201666. On the Forward Bias Anomalous Peak and Negative Capacitance NC in Al ZnO p Si Structures at Room Temperature
Aytimur A., ALTINDAL Ş., ORAK İ., USLU İ.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201667. Frequency and Voltage Dependence of Dielectric ac Electrical conductivity and Electric Modulus Profiles in Al Co3O4 PVA p Si Structures in the Wide Frequency Range
BİLKAN Ç., ORAK İ., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201668. The Investigation of Photocapacitor Properties of Au TiO2 n Si MIS Type Photodiode by Using Impedance Measurements at Room Temperature
ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201669. The investigation of photocapacitor properties of Au TiO2 n Si MIS type photodiode bu using impedance measurements at room temperature
ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201670. The Investigation of Photoconducting Properties of Au TiO2 n Si MIS Type Photodiode by Using Current Voltage Characteristics at Room Temperature
ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201671. Frequency and Voltage Dependence Surface States and Series Resistance Profiles in Al Co3O4 PVA p Si Structures from Admittance Measurements
ALTINDAL Ş., BİLKAN Ç., Kalandaragh Y. A.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201672. The investigation of photoconducting properties of Au TiO2 n Si MIS type photodiode by using curent voltage characteristics at room temperature
ŞAFAK ASAR Y., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201673. The Investigation of Electrical Characteristics in the Au n 4H SiC Structures with Different Thicknes of Zn dopped PVA Interlayer in the Wide Frequency Range
Lapa H. E., KÖKCE A., ORAK İ., ALTINDAL Ş.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2016
201674. Influence of Frequency and Applied Voltage on Dielectric Properties Electric Modulus and Electrical Conductivity in Au ZnO n Si Structures
Badali Y., Nikravan A., Kaya G., ALTINDAL Ş., USLU İ.
International Physics Conference at the Anatolian Peak, 25 - 27 Şubat 2016, (Özet Bildiri)
2015
201575. Farklı Arayüzey Zn PVA tabakalı Au p Si MPS yapıların hazırlanması ve elektriksel özelliklerinin I v ve C G v ölçümleri kullanarak incelenmesi
Bilge Benli B., ALTINDAL Ş., USLU İ.
21. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 25 Aralık 2015, ss.108
2015
201576. ALD Tekniği ile oluşturulan Au/TiO2/n-Si diyotların elektriksel ve foto-iletim özelliklerinin oda sıcaklığında incelenmesi
ŞAFAK ASAR Y., ALTINDAL Ş.
21. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 25 Aralık 2015, (Özet Bildiri)
2015
201577. On the forward bias negative capacitance and interface traps Dit and series resistance Rs effects in Cr p Si MS contacts with and without PPy interfacial layer at room temperature
BİLKAN Ç., GÜMÜŞ A., BİLKAN M. T., ALTINDAL Ş.
2nd International Nanoscience and Nanotechnolgy for Next Generation Conference (NaNoNG) 2015, 29 - 31 Ekim 2015
2015
201578. Study on The Reverse Bias Carrier Transport Mechanism inAu TiO2 n 4H SiC Structure
ALTINDAL Ş., YILDIZ D. E.
2nd International Nanoscience and Nanotechnolgy for Next Generation Conference (NaNoNG) 2015, 29 - 31 Ekim 2015
2015
201579. Electrical characteristics and energy density distribution of surface states Nss of Ag perylene n Si Schottky barrier diodes SBDs at room temperature
BİLKAN M. T., ZEYREK S., BİLKAN Ç., ALTINDAL Ş.
2nd International Nanoscience and Nanotechnolgy for Next Generation Conference (NaNoNG) 2015, 29 - 31 Ekim 2015
2015
201580. Electrical Characteristics of Au PPy n Si MPS type Schottky Barrier Diodes SBD as Function of Temperature and Applied Bias Voltage
GÜMÜŞ A., MARIL E., ALTINDAL Ş.
2nd International Nanoscience and Nanotechnolgy for Next Generation Conference (NaNoNG) 2015, 29 - 31 Ekim 2015
2015
201581. Comparative Analysis of Temperature dependent Electrical Characteristics of Au PPy n Si MPS type Schottky Diodes SDs at Two Frequencies
ELİF M., GÜMÜŞ A., ALTINDAL Ş.
2nd International Nanoscience and Nanotechnolgy for Next Generation Conference (NaNoNG) 2015, 29 Ekim - 28 Mart 2015
2015
201582. Frequency Dependence of Dielectric Properties and ac Electrical Conductivity of Au Ti Al2O3 n GaAs structures with Different Thicknesses Al2O3 interfacial layer
GÜCLÜ C., ÖZDEMİR A. F., ALTINDAL Ş.
2nd International Nanoscience and Nanotechnolgy for Next Generation Conference (NaNoNG) 2015, 29 - 31 Ekim 2015
2015
201583. ON THE FREQUENCE AND VOLTAGE DEPENDENCE OF ELECTRICAL OF THE AU BI3TI4O12 N SI MFS STRUCTURE IN THE TEMPERATURE RANGE IN THE WİDE FREQUENCIES RANGE AT ROOM TEMPERATURE
DURMUŞ P., ŞAHİN C., ALTINDAL Ş.
9th INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION – BPU9, 24-27 AUGUST 2015, 24 - 27 Ağustos 2015
2015
201584. THE FABRICATION OF Au CROSS LINKED PVA n Si Au SCHOTTKY BARRIER DIODES SBDs AND INVESTIGATION THEIR ELECTRICAL CHARACTERISTICS AT ROOM TEMPERATURE
LİDA B., BİLKAN Ç., ALTINDAL Ş., ALİ N., YASHAR AZİZİAN K.
9th INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION – BPU9, 24-27 AUGUST 2015, 24 - 27 Ağustos 2015
2015
201585. Frequency and voltage-dependent electrical and dielectric properties of Au/Graphene Oxide Calcineed/n-Si structures at room temperature
ALTINDAL Ş., KAYA A., ÇETİNKAYA H. G., USLU İ.
International Semiconductor Science and Technology Conference 2015 (ISSTC2015), 11 - 13 Mayıs 2015, (Özet Bildiri)
2015
201586. Some Electrical Properties of Au/n-Si Structures with and without Graphene doped PVA Interfacial Layer
ÇETİNKAYA H. G., KAYA A., ALTINDAL Ş.
International Semiconductor Science and Technology Conference 2015 (ISSTC2015), 11 - 13 Mayıs 2015, (Özet Bildiri)
2015
201587. Electrical properties of Au/3 Graphene (GP)-doped PVA/n-Si structures as function of frequency
ÇETİNKAYA H. G., KAYA A., ALTINDAL Ş., ORAK İ.
International Semiconductor Science and Technology Conference 2015 (ISSTC2015), 11 - 13 Mayıs 2015, (Özet Bildiri)
2015
201588. On the Profile of Frequency and Voltage Dependent Interface States and Series Resistance in Au Pbcoo Nanoceramic N Si Capacitors by Using Admittance Spectroscopy Method
KAYA A., DEMİREZEN S., ALTINDAL Ş., AYTİMUR A.
International Semiconductor Science and Technology Conference 2015 (ISSTC-2015), 11 - 13 Mayıs 2015
2015
201589. Frequency Voltage Dependence Dielectric Properties AC Conductivity of Au GO Doped PbCOO Nanoceramic N Si Capacitors at Room Temperature
KAYA A., DEMİREZEN S., ALİALY S., ALTINDAL Ş.
International Semiconductor Science and Technology Conference 2015 (ISSTC-2015), 11 - 13 Mayıs 2015
2015
201590. Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 graphene doped PVA n Si Structures in Dark and under Various Illuminations at room temperature
SAHAR A., KAYA A., USLU İ., ALTINDAL Ş.
International Semiconductor Science and Technology Conference 2015 (ISSTC-2015), 11 - 13 Mayıs 2015
2015
201591. Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 Graphene doped PVA n Si Structures in Dark and under Various İlluminations at room temperature
Alialy S., KAYA A., USLU İ., ALTINDAL Ş.
International Semiconductor Science Technology Conference, İzmir, Türkiye, 11 - 13 Mayıs 2015, ss.42
2015
201592. Frequency and voltage Dependent electrical and Dielectrical Properties of AU Graphene Oxide Calcined n Si Structures at Room Temperature
ALTINDAL Ş., KAYA A., ÇETİNKAYA H. G., USLU İ.
International Semiconductor Science Technology Conference, İzmir, Türkiye, 10 - 13 Mayıs 2015, ss.72
2015
201593. The Energy Density Distribution Profile of Interface Traps and Their Relaxation times and Capture Cross Sections of MS structure with GO doped PBCoO nanoceramic Structure in Forward and Reverse Bias Regions
ALTINDAL Ş., KAYA A., Demirezen S., USLU İ.
1st İnternational Conference on Organic Electronic Material Texchnologies (OEMT'2015) 25-28 Marsch 2015, Elazığ, Türkiye, 25 - 28 Mart 2015, ss.140, (Özet Bildiri)
2015
201594. Temperature and frequency effects on the electrical and dielectric properties of the Ag 9 10 H2BaP n Si Au Sb MIS Schottky structure
ÖZERDEN E., KILIÇOĞLU T., TURUT A., TECİMER H., ALTINDAL Ş., OCAK Y. S., et al.
1st İnternational Conference on Organic Electronic Material Technologies (OEMT’2015) / 25-28 March 2015, Elazig, Turkey, 25 - 28 Mart 2015
2015
201595. A comparative study on the main electrical parameters of Au n Si MS Au biphenyl CuPc n Si and Au biphenylSubs CoPc n Si MPS type Schottky barrier diodes SBDs
DEMİR A., YÜCEDAĞ İ., GÜLÇİN E., ALTINDAL Ş., BARAZ N., KANDAZ M.
1st İnternational Conference on Organic Electronic Material Technologies (OEMT’2015) / 25-28 March 2015, Elazig, Turkey, 25 - 28 Mart 2015
2015
201596. The source of negative capacitance and anomalous peak in the forward bias capacitance voltage of Cr p Si Au Schottky barrier diodes SBDs
BİLKAN Ç., GÜMÜŞ A., ALTINDAL Ş., BİLKAN M. T.
1st İnternational Conference on Organic Electronic Material Technologies (OEMT’2015) / 25-28 March 2015, Elazig, Turkey, 25 - 28 Mart 2015
2015
201597. Controlling the electrical characteristics of Au n Si structure with biphenyl CoPc and OHSubsZnPc and without interfacial layer
BARAZ N., YÜCEDAĞ İ., AHMET D., GÜLÇİN E., ALTINDAL Ş.
1st İnternational Conference on Organic Electronic Material Technologies (OEMT’2015) / 25-28 March 2015, Elazig, Turkey, 25 - 28 Mart 2015
2015
201598. The Frequency Dependent Admittance Measurements of Au ZnO n GaAs Schottky Barrier Diodes SBDs
ORAK İ., AKIN B., TECİMER H., USLU TECİMER H., ALTINDAL Ş.
1st İnternational Conference on Organic Electronic Material Technologies (OEMT’2015) / 25-28 March 2015, Elazig, Turkey, 25 - 28 Mart 2015
2015
201599. Frequency and Voltage Dependent profile of Dilelectric properties electric modulus and ac electrical conductivity in the MS
KAYA A., Demirezen S., ALTINDAL Ş., USLU İ.
1st İnternational Conference on Organic Electronic Material Texchnologies (OEMT'2015) 25-28 Marsch 2015, Elazığ, Türkiye, 25 - 28 Mart 2015, ss.74, (Özet Bildiri)
2015
2015100. Illumination Effects on Current Voltage Characteristics of Au ZnO n GaAs Schottky Barrier Diodes SBDs
ÇİÇEK O., USLU TECİMER H., ORAK İ., TECİMER H., ALTINDAL Ş.
1st İnternational Conference on Organic Electronic Material Technologies (OEMT’2015) / 25-28 March 2015, Elazig, Turkey, 25 - 28 Mart 2015
2015
2015101. Electrical characteristics of GaAs AlGaAs Structures in the wide Frequency and applied bias voltage ranges at room temperature
GÜNEŞ M., LİŞESİVDİN B., PESEN E., Henini M., ALTINDAL Ş.
1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015
2015
2015102. Negative Capacitance Behaviour in The Forward Bias of Au ZnO n GaAs Schottky Barrier Diodes SBDs in Dark and Under Various Illumination Levels
TAN S. O., USLU TECİMER H., ORAK İ., TECİMER H., ALTINDAL Ş.
1st İnternational Conference on Organic Electronic Material Technologies (OEMT’2015) / 25-28 March 2015, Elazig, Turkey, 25 - 28 Mart 2015
2015
2015103. Two diodes model in the forward bias current voltage I V characteristics of Al0 33Ga0 67As n GaAs at room temperature
GÜNEŞ M., LİŞESİVDİN B., Henini M., ALTINDAL Ş.
1st International Conference on Organic Electronic Material Technologies (OEMT’2015), 25 - 28 Mart 2015
2015
2015104. Frequency and voltage dependent profile of dielectric properties electric modulus and ac electrical conductivity in the MS structure with GO doped PBCoO calcined interfacial layer at room temperature
KAYA A., DEMIREZEN S., ALTINDAL Ş., USLU İ.
1st İnternational Conference on Organic Electronic Material Technologies (OEMT’2015) / 25-28 March 2015, Elazig, Turkey, 25 - 28 Mart 2015
2015
2015105. On the temperature and voltage dependence of electrical and dielectric properties of the Au Bi3Ti4O12 n Si MFS structure in the temperature range of 120 380 K
CANAN S., DURMUŞ P., ALTINDAL Ş.
1st İnternational Conference on Organic Electronic Material Technologies (OEMT’2015) / 25-28 March 2015, Elazig, Turkey, 25 - 28 Mart 2015
2014
2014106. AuZn TiO2 p GaAs 110 Schottky Bariyer Diyotlarda Dielektrik ve Empedans Spektroskopisi
ŞAFAK ASAR Y., ASAR T., ÖZÇELİK S., ALTINDAL Ş.
20. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 26 Aralık 2014, ss.79
2015
2015107. Au/TiO2/n-Si Diyotlarda aydınlatma şiddetinin doğru ve ters beslem C-V ve G/-V karakteristikler üzerine etkisinin incelenmesi
ALTINDAL Ş., ŞAFAK ASAR Y., ORAK İ.
21. Yoğun Madde Fiziği Ankara Toplantısı, Türkiye, 25 Aralık 2015, (Özet Bildiri)
2014
2014108. On the Origin of Capacitance and Anomalous Peak in the Forward Bias Capacitance-Voltage plots in Au/1 graphene doped-Ca1.9Pr0.1Co4Ox)/n-Si Structure.
ÇETİNKAYA H. G., ALTINDAL Ş., KAYA A., KOÇYİĞİT S.
Nanoscience Nanotechnology for Next Generation, 20 - 22 Ağustos 2014, (Özet Bildiri)
2014
2014109. On the Temperature and Voltage Dependence Forward Bias Current-Voltage (I-V) Characteristics in Au/Ca3Co4Ga0.001Ox(2 graphene cobalt)/n-Si Structure
MARIL E., KAYA A., ÇETİNKAYA H. G., KOÇYİĞİT S., ALTINDAL Ş.
Nanoscience Nanotechnology for Next Generation (NanoNGe’14), 20 - 22 Ağustos 2014, (Özet Bildiri)
2014
2014110. Investigation of Negative Dielectric Constant at Forward Biases Using Impedance Spectroscopy Analysis in Au/1 graphene doped- Ca1.9Pr0.1Co4Ox)/n-Si Structure
ÇETİNKAYA H. G., ALİALY S., ALTINDAL Ş., USLU İ., KAYA A.
Nanoscience Nanotechnology for Next Generation, 20 - 22 Ağustos 2014, (Özet Bildiri)
2014
2014111. Temperature and Voltage Dependence of Electrical and Dielectric Properties of Au/1 graphene doped- Ca1.9Pr0.1Co4Ox)/n-Si Structure
ÇETİNKAYA H. G., KAYA A., ALTINDAL Ş., KOÇYİĞİT S.
Nanoscience Nanotechnology for Next Generation (NanoNGe’14), 20 - 22 Ağustos 2014, (Özet Bildiri)
2014
2014112. The frequency dependence properties of tan M and M in the wide frequency range in AuZn TiO2 p GaAs 110 schottky barrier diodes
ŞAFAK ASAR Y., ALTINDAL Ş.
Türk Fizik Derneği 31. Uluslararası Fizik Kongresi, 21 - 24 Temmuz 2014, (Özet Bildiri)
2014
2014113. The energy density distribution of interface states in AuZn TiO2 p GaAs 110 MIS schottky barrier diodes using admittance spectroscopy
ŞAFAK ASAR Y., ALTINDAL Ş.
Türk Fizik Derneği 31. Uluslararası Fizik Kogresi, 21 - 24 Temmuz 2014, (Özet Bildiri)
2011
2011114. The evaluation of Surface States Barrier Height and Series Resistance in Au CdTe Schottky Barrier Diodes SBDs at Moderate Temperatures
ŞAFAK ASAR Y., ALTINDAL Ş., MEMMEDLİ T., KANBUR ÇAVUŞ H.
Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, 6 - 09 Eylül 2011, (Özet Bildiri)
2011
2011115. On the Energy Density Distribution Profile of surface States in Al pentacene p GaSa Heterojuction Diodes
ŞAFAK ASAR Y., YAKUPHANOĞLU F., ALTINDAL Ş.
Mini-Workshop on Surface Science for Inauguration of the Turskish Surface Science Society, Türkiye, 23 Mayıs 2011, (Özet Bildiri)
2011
2011116. Illumination Dependent Admittance Characteristics of Au/Zinc Acetate Doped Polyvinyl Alcohol (PVA:Zn)/n-Si Schottky Barrier Diodes (SBDs)
Tascioglu I., AYDEMİR U., Altindal Ş., Tunc T.
1st International Congress on Advances in Applied Physics and Materials Science (APMAS), Antalya, Türkiye, 12 - 15 Mayıs 2011, cilt.1400, ss.307-311, (Tam Metin Bildiri)
2011
2011117. Illumination Effect on Admittance Measurements of Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes in Wide Frequency and Applied Bias Voltage Range
Yeriskin S. A., Uslu H., Tunc T., ALTINDAL Ş.
1st International Congress on Advances in Applied Physics and Materials Science (APMAS), Antalya, Türkiye, 12 - 15 Mayıs 2011, cilt.1400, ss.541-545, (Tam Metin Bildiri)
2010
2010118. The determination of energy density distribution profile of interface states in Al SiO2 p Si MOS structures
ŞAFAK ASAR Y., ALTINDAL Ş., Sönmez Z., KAYA A.
Türk Fizik Derneği 27. Uluslararası Fizik Kongresi, 14 - 17 Eylül 2010, (Özet Bildiri)
2010
2010119. The determination of frequency and applied bias voltage of electrical and dielectric properties of Al SiO2 p Si MOS structures
ALTINDAL Ş., ŞAFAK ASAR Y., SÖNMEZ Z., KAYA A.
Türk Fizik Derneği 27. Uluslararası Fizik Kongresi, 14 - 17 Eylül 2010, (Özet Bildiri)
2010
2010120. Temperature Dependent Electrical Characteristics of AlGaAs/GaAs Single-Quantum-Well Lasers Using C-V and G/w-V Measurements
ÖZÇELİK S., USLU H., BENGİ A., ÇETİN S. Ş., AYDEMİR U., ALTINDAL Ş., et al.
XXI International Scientific and Engineering Conference on Photoelectronics and Night Vision Devices, Moskva, Rusya, 25 - 28 Mayıs 2010, (Özet Bildiri)
2009
2009121. Au/TiO2/n-Si Schottky Diyotlarında Ara-yüzey Durum Analizi
ALTUNTAŞ H., YILDIZ A., ÖZEN Y., ALTINDAL Ş., ÖZÇELİK S.
16. Yoğun Madde Fiziği Kongresi (YMF16), Ankara, Türkiye, 06 Kasım 2009, (Özet Bildiri)
2009
2009122. Au SrTiO3 n Si Yapısındaki Derin Seviyelerin Tavlamaya Bağlı DLTS Metodu ile Karakterizasyonu
AYDEMİR U., TAŞÇIOĞLU İ., ASAR T., ŞAFAK Y., ALTINDAL Ş., MAMMADOV T. S., et al.
16. Yoğun Madde Fiziği Ankara Toplantısı, Ankara, Türkiye, 06 Kasım 2009, ss.92
2009
2009123. Interface state density analyzing of Au TiO2 rutile n Si Schottky barrier diode
Altuntaş H., Bengi A., Asar T., Aydemir U., Sarıkavak B., Özen Y., et al.
13th European Conference on Applications of Surface and Interface Analysis, Antalya, Türkiye, 18 - 23 Ekim 2009, ss.322, (Özet Bildiri)
2009
2009124. Interface States Density Analyzing of Au/TiO2 (Rutile)/n-Si Schottky Barrier Diode
ALTUNTAŞ H., BENGİ A., ASAR T., AYDEMİR U., SARIKAVAK B., ÖZEN Y., et al.
13th European Conference on Applications of Surface and Interface Analysis, Antalya, Türkiye, 18 - 23 Ekim 2009, (Özet Bildiri)
2009
2009125. The effect of insulator layer thickness on the main electrical parameters in Ni Au AlxGa1 xN AlN GaN heterostructures
ALTINDAL Ş., ŞAFAK ASAR Y., TAŞÇIOĞLU İ., ÖZBAY E.
13th European Conference on Applications of Surface and Interface Analysis, 18 - 23 Ekim 2009, (Özet Bildiri)
2009
2009126. Deep level transient spectroscopy of Au SrTiO3 n Si structures
AYDEMİR U., ŞAFAK ASAR Y., ALTINDAL Ş.
Türk Fizik Derneği 26. Uluslar arası Fizik Kongresi, 24-27 Eylül 2009, 24 - 27 Eylül 2009, (Özet Bildiri)
2008
2008127. Frequency and Voltage Dependent series resistance profile in Au n CdTe Solar cells
FİAT VAROL S., MERDAN Z., ALTINDAL Ş., Mammadov T.
25. Uluslararası Fizik Kongresi, Bodrum, Türkiye, 25 - 29 Ağustos 2008
2008
2008128. The Role of Interface states and Series Resistance on the Current Voltage I V Characteristics of Au n CdTe Solar cells
FİAT VAROL S., MERDAN Z., ALTINDAL Ş., Mammadov T.
25. Uluslararası Fizik Kongresi, 25 - 29 Ağustos 2008, (Özet Bildiri)
2008
2008129. ON THE PROFILE OF 6°Co y-RAY IRRADIATION DEPENDENTINTERFACE STATES AND SERIES RESISTANCE IN AI/Si02/p-Si (MIS) STRUCTURES
ALTINDAL Ş., TAŞÇIOĞLU İ., ÖZBAY A.
5. Uluslararası Bilim Teknik Konferansı: Fiziğin Güncel Problemleri, 25 - 27 Haziran 2008, (Tam Metin Bildiri)
Desteklenen Projeler
2025 - 2026
2025 - 2026Enerji Hasadı Için Hibrit Triboelektrik Ipliklerden Akıllı TekstilTabanlı Nanojeneratör Tasarımı
TÜBİTAK Uluslararası İkili İşbirliği Projesi , 2535 - İran Bilim, Araştırma ve Teknoloji Bakanlığı (MSRT) ile İkili İşbirliği Programı
Yılmaz D.(Yürütücü), Maleki H.(Yürütücü), Alay Aksoy S., Altındal Ş., Ulusoy M.
2016 - 2017
2016 - 2017Au/metal-PVA/n-Si/Au (MPS) tipi yapıların hazırlanması ve elektriksel özelliklerinin frekans ve voltaja bağlı oda sıcaklığında incelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2012 - 2013
2012 - 2013Au/Zn-Katkılı/n-GaAs Yapıların Hazırlanması ve Fiziksel Özelliklerinin İncelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2011 - 2012
2011 - 2012Au/TiO2/n-SiC (MIS) Schottky Diyotlarının Hazırlanması ve Elektriksel Özelliklerinin incelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2010 - 2012
2010 - 2012Metal/katkılı PVA/Yarıiletken Yapılarının Radyasyona Bağlı İncelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2009 - 2010
2009 - 2010Au/n-CdTe Schottky Diyotların Elektriksel Özelliklerinin Karanlık ve Işık Altında İncelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2008 - 2009
2008 - 2009Au/BTO/Sio2/Si (MFIS) Yapıların Hazırlanması Elektriksel Ve D+D50ielektrik Özelliklerinin Sıcaklık ve Frekansa Bağlı İncelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2007 - 2008
2007 - 2008Au/n-InP ve Au/n-GaN Schottky Diyotlarının Hazırlanması, Elektriksel ve Dielekrik Özelliklerinin Sıcaklığa ve Frekansa Bağlı İncelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2006 - 2007
2006 - 2007Geniş Bant Araklı Metal-Yarıiletken(MS) Yapıların Hazırlanması ve Temel Parametrelerinin Sıcaklık ve Radyasyon Dozuna Bağlı İncelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2003 - 2004
2003 - 2004MOS Yapılarının Hazırlanması ve Temel Özelliklerinin Radyosyon ve Frekansa Bağlı İncelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2002 - 2003
2002 - 2003MIS Yapıların Hazırlanması ve Onların Akım İletim Mekanizmalarının İncelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2001 - 2002
2001 - 2002BTO amorf filmlerde dielektrik sabitinin sıcaklık ve kalınlığa bağlı inc.
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
2000 - 2000
2000 - 2000MOS yapılarda dielektrik sabitinin frekans, kalınlık ve sıcaklığa bağlı incelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
1999 - 1999
1999 - 1999Schottky diyotlarında ara yüzey durumlarının C-V karakterisliklerine etkisi.
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
1998 - 1998
1998 - 1998Güneş pilleri schottky diyodları ve MOS yapımı ve tenel parametrelerinin sıcaklığa bağlı incelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
1996 - 1996
1996 - 1996Yarı iletken ve ferro yarıiletken Materyallerin optik ve elektriksel karekteristiklerinin sıcaklığa bağlı olarak incelenmesi
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)
1995 - 1995
1995 - 1995Yarı iletken kristaller için ısı kontrolü oksidasyon fırınının yapımı.
Yükseköğretim Kurumları Destekli Proje , BAP Araştırma Projesi
ALTINDAL Ş. (Yürütücü)